Abstract: A display device includes a substrate having a display region and a driver region; a gate line and a data line crossing each other to define a pixel region in the display region, the pixel region having a pixel electrode; an insulation layer between the gate line and the data line; a first thin film transistor in the display region; and a second thin film transistor having a first polarity and a third thin film transistor having a second polarity in the driver region, wherein the pixel electrode, the gate line and the gate electrodes of the first to third thin film transistors have a double-layer structure in which a metal layer is formed on a transparent conductive layer, and the transparent conductive layer of the pixel electrode is exposed through a transmission hole passing through the insulation layer and the metal layer in the pixel region.

Abstract: Disclosed is an electrophoretic display device and a fabrication method thereof, and the electrophoretic display device may include a thin-film transistor formed on a lower substrate, a pixel electrode connected to the thin-film transistor, side electrodes formed at periphery of the pixel electrode, a partition wall formed on the side electrode, fluid including anelectrophoretic particles formed between the partition walls, and an upper substrate adhered on the lower substrate and formed with a common electrode on the rear surface thereof.

Abstract: An array substrate for an LCD device includes a first TFT including a first semiconductor layer, a first gate electrode, wherein the first gate electrode is directly over the first semiconductor layer; a first protrusion extending from the first gate electrode along an edge of the first semiconductor layer; a second TFT including a second semiconductor layer, a second gate electrode, wherein the second gate electrode is directly over the second semiconductor layer; a second protrusion extending from the second gate electrode along an edge of the second semiconductor layer; a third TFT connected to crossed data and gate lines including a third semiconductor layer, a third gate electrode, wherein the third gate electrode is directly over the third semiconductor layer; a third protrusion extending from the third gate electrode along an edge of the third semiconductor layer; and a pixel electrode.

Abstract: A flexible display substrate includes: a thin film transistor on the flexible substrate, the thin film transistor including a gate electrode, a gate insulating layer insulating the gate electrode, a channel layer on the gate insulating layer, a source electrode connected with the channel layer, and a drain electrode connected with the channel layer; a first stress absorbing layer below the thin film transistor; a first protection layer on the first stress absorbing layer; a second stress absorbing layer on the thin film transistor; a second protection layer on the second stress absorbing layer; and a pixel electrode on the second protection layer, the pixel electrode being connected with the drain electrode.

Abstract: A TFT array substrate includes a gate line, a gate electrode, and a gate pad on a substrate, each of which including stacked layers of a first metal and a transparent conductive material, respectively, a pixel electrode formed of the transparent conductive material, a gate insulation layer on the substrate including the gate line and the gate electrode, the gate insulation layer having first and second open areas exposing the pixel electrode and the gate pad, a semiconductor layer formed on the gate insulation layer, a data line crossing the gate line to define a sub-pixel region, a source electrode diverging from the data line, a drain electrode spaced apart from the source electrode and connected to the pixel electrode, a data pad at an end of the data line; a masking layer covering the data line, the source electrode and the drain electrode, and an oxidation-prevention layer covering the gate pad and the data pad.

Abstract: A method for fabricating an LCD device includes forming an active layer having a source region, a drain region and a channel region on the first substrate; forming first and second conductive layers on the first substrate; forming a gate electrode, a gate line and a pixel electrode by patterning the first and second conductive layers, the gate electrode and the gate line being formed as a dual layer having the first and second conductive layers and the pixel electrode being formed of the first conductive layer; forming a contact hole exposing a portion of the source and drain regions; forming a source and drain electrodes electrically connected to the source and drain regions through the contact hole; and forming a liquid crystal layer between the first and second substrates.

Abstract: A thin film transistor array substrate and a method for manufacturing the thin film transistor array substrate are disclosed. Specifically, a thin film transistor array may be formed using a reduced number of masks.

Abstract: A method for fabricating a liquid crystal display (LCD) device comprises forming an active pattern and a data line on a substrate, the active pattern including a source, a drain, and a channel regions; a first insulation film on a portion of the substrate; forming a gate electrode in a portion of the active pattern where the first insulation film is formed; a second insulation film on the substrate; forming a plurality of first contact holes exposing a portion of the source and drain regions and a second contact hole exposing a portion of the data line; forming a source electrode from a transparent conductive material connected to a source region within the respective first contact hole and a data line within the second contact hole; and forming a pixel and a drain electrodes from the transparent conductive material connected to a drain region within the respective first contact hole.

Abstract: A method of manufacturing a liquid crystal display device includes attaching a flexible substrate and a base substrate using an adhesive therebetween, the base substrate including substantially pure iron; forming a plurality of thin films on a surface of the flexible substrate attached to the base substrate, the surface of the flexible substrate opposite to the attached surface of the flexible substrate; and etching the base substrate after forming the plurality of thin films.

Abstract: An array substrate for an LCD device includes a first TFT including a first semiconductor layer, a first gate electrode, wherein the first gate electrode is directly over the first semiconductor layer; a first protrusion extending from the first gate electrode along an edge of the first semiconductor layer; a second TFT including a second semiconductor layer, a second gate electrode, wherein the second gate electrode is directly over the second semiconductor layer; a second protrusion extending from the second gate electrode along an edge of the second semiconductor layer; a third TFT connected to crossed data and gate lines including a third semiconductor layer, a third gate electrode, wherein the third gate electrode is directly over the third semiconductor layer; a third protrusion extending from the third gate electrode along an edge of the third semiconductor layer; and a pixel electrode.

Abstract: A liquid crystal display device includes a first thin film transistor having an active layer, a gate electrode with a double conductive layer structure overlapping the active layer with a gate insulating film there between, a source electrode and a drain electrode connected to the active layer through first and second contact holes which penetrate an interlayer insulating film on the gate insulating film; a pixel electrode having a double layer structure, including a first transparent conductive layer and a second conductive layer, formed on the gate insulating film, wherein a portion of the first transparent conductive layer is exposed through a first transmission hole, which penetrates the interlayer insulating film; a luminescence layer on a portion of the pixel electrode; and a common electrode on the luminescence layer.

Abstract: A method of fabricating a liquid crystal display device includes forming an active pattern and a data line on a substrate, forming a first insulating layer on the data line, forming a second insulating layer on the substrate, forming a gate electrode on the second insulating layer above the active pattern, forming a third insulating layer on the substrate, forming first and second contact holes through the second and third insulating layers to expose first and second portions of the active pattern, and forming a third contact hole through the first, second, and third insulating layers exposing a portion of the data line, respectively, and forming source and drain electrodes on the third insulating layer, the source electrode connected to the first exposed portion of the active pattern through the first contact hole and connected to the first exposed portion of the data line through the third contact hole, and the drain electrode connected to the second exposed portion of the active pattern through the second

Abstract: A thin film transistor array substrate and a method for manufacturing the thin film transistor array substrate are disclosed. Specifically, a thin film transistor array may be formed using a reduced number of masks.

Abstract: A source driver in a display may include a latch capable of latching input data received from a timing controller in a display, a delta-sigma digital-to-analog converter configured to convert the input data stored in the latch to an analog signal by delta-sigma modulation, and an output buffer configured to output a column drive signal by buffering the analog signal received from the delta-sigma digital-to-analog converter. Accordingly, a source driver in a display modulates input data of 10-bit or higher by delta-sigma modulation with high accuracy, and then converts the data to an analog signal. Therefore, although an area occupied by the source driver of embodiments becomes smaller than that occupied by the related art source driver with a high resolution of 10-bits or higher, a display panel can provide an image of high resolution.

Abstract: A transflective-type liquid crystal display device includes a plurality of gate and data lines crossing each other on a substrate to define a plurality of pixel regions, a thin film transistor at each crossing of the gate and data lines, the thin film transistor including a semiconductor layer, and source and drain electrodes contacting source and drain regions, respectively, a projection seed pattern within the pixel region along a same layer as the semiconductor layer of the thin film transistor, and a reflective electrode contacting the drain electrode of the thin film transistor and having a reflective projection corresponding to the projection seed pattern.

Abstract: A method for fabricating an LCD device includes providing a substrate; forming an active pattern having a source region, a drain region and a channel region on the substrate; forming a first insulation film on the substrate; forming a gate electrode, a gate line and a pixel electrode on the substrate; forming a second insulation film on the substrate; forming a contact hole exposing a portion of the source and drain regions by removing a portion of the first and second insulation films; patterning the second insulation film on the pixel electrode at least a size corresponding to a form of the pixel electrode; and forming a source electrode electrically connected to the source region and a drain electrode electrically connected to the drain region through the contact hole.

Abstract: A transflective-type liquid crystal display device includes a plurality of gate and data lines crossing each other on a substrate to define a plurality of pixel regions, a thin film transistor at each crossing of the gate and data lines, the thin film transistor including a semiconductor layer, and source and drain electrodes contacting source and drain regions, respectively, a projection seed pattern within the pixel region along a same layer as the semiconductor layer of the thin film transistor, and a reflective electrode contacting the drain electrode of the thin film transistor and having a reflective projection corresponding to the projection seed pattern.

Abstract: Delta-sigma analog-to-digital converters (ADCs) and methods to calibrate methods to delta-sigma ADCs are disclosed. In one particular example, a delta-sigma ADC is described, including an n-bit feedback digital-to-analog converter (DAC) having a number of unit elements, and is configured to provide a feedback signal to a summing device, which generates a difference signal based on an analog input signal and the feedback signal. An n-bit ADC is included to generate an n-bit digital signal based on the difference signal. A dynamic element matching device selects one or more unit elements in the DAC based on the n-bit digital signal. A storage device, such as a memory, stores error coefficients corresponding to the plurality of unit elements. Finally, a digital corrector is included to receive the selection of unit elements, receive error coefficients corresponding to the selected unit elements, and adjust the n-bit digital signal based on the received error coefficients.

Abstract: A method for fabricating an LCD device includes forming an active layer having a source region, a drain region and a channel region on the first substrate; forming first and second conductive layers on the first substrate; forming a gate electrode, a gate line and a pixel electrode by patterning the first and second conductive layers, the gate electrode and the gate line being formed as a dual layer having the first and second conductive layers and the pixel electrode being formed of the first conductive layer; forming a contact hole exposing a portion of the source and drain regions; forming a source and drain electrodes electrically connected to the source and drain regions through the contact hole; and forming a liquid crystal layer between the first and second substrates.

Abstract: A display device includes a substrate having a display region and a driver region; a gate line and a data line crossing each other to define a pixel region in the display region, the pixel region having a pixel electrode; an insulation layer between the gate line and the data line; a first thin film transistor in the display region; and a second thin film transistor having a first polarity and a third thin film transistor having a second polarity in the driver region, wherein the pixel electrode, the gate line and the gate electrodes of the first to third thin film transistors have a double-layer structure in which a metal layer is formed on a transparent conductive layer, and the transparent conductive layer of the pixel electrode is exposed through a transmission hole passing through the insulation layer and the metal layer in the pixel region.