Abstract: The present multi-domain liquid crystal display device includes first and second substrates facing each other; a liquid crystal layer between the first and second substrates; a plurality of gate bus lines arranged in a first direction on the first substrate and a plurality of data bus lines arranged in a second direction on the first substrate to define a pixel region; a thin film transistor positioned at a crossing area of the data bus line and the gate bus line, the thin film transistor comprising a gate electrode, a semiconductor layer, and source/drain electrodes; a pixel electrode on the first substrate, the pixel electrode having at least one window inducing electric field therein; a color filter layer on the second substrate, the color filter layer having at least one window distorting electric field therein; a common electrode on the color filter layer; and an alignment layer on at least one substrate between the first and second substrates.

Abstract: A thin film transistor having a source/drain electrode on an insulating substrate is provided with a metal oxide layer interposed between a source/drain electrode and a metal connecting line. The formation of the metal oxide layer prevents the occurrence of the galvanic phenomenon.

Abstract: An array substrate for a transflective liquid crystal display device, including a substrate; at least one gate line and at least one gate electrode formed on the transparent substrate; a gate-insulating layer formed over the at least one gate line and the at least one gate electrode; a silicon layer formed on the gate-insulating layer, the silicon layer being positioned above the at least one gate electrode; a source electrode and a drain electrode formed on the silicon layer and spaced apart from each other with the silicon layer overlapped therebetween, wherein the at least one gate electrode, the source electrode, the drain electrode, and the silicon layer define a thin film transistor (TFT); at least one data line; a first passivation layer covering the at least one data line; a transparent electrode formed on the first passivation layer; and a reflective electrode formed on the transparent electrode.

Abstract: A thin film transistor having a source/drain electrode on an insulating substrate is provided with a metal oxide layer interposed between a source/drain electrode and a metal connecting line. The formation of the metal oxide layer prevents the occurrence of the galvanic phenomenon.

Abstract: A liquid crystal display device includes a substrate, an organic insulating film formed on the substrate, an alignment film having a first etch rate formed on the organic insulating film, and a silicon nitride layer having a second etch rate formed between the alignment film and the organic insulating film, wherein the first etch rate is different from the second etch rate.

Abstract: An array substrate for a transflective liquid crystal display device, including a substrate; at least one gate line and at least one gate electrode formed on the transparent substrate; a gate-insulating layer formed over the at least one gate line and the at least one gate electrode; a silicon layer formed on the gate-insulating layer, the silicon layer being positioned above the at least one gate electrode; a source electrode and a drain electrode formed on the silicon layer and spaced apart from each other with the silicon layer overlapped therebetween, wherein the at least one gate electrode, the source electrode, the drain electrode, and the silicon layer define a thin film transistor (TFT); at least one data line; a first passivation layer covering the at least one data line; a transparent electrode formed on the first passivation layer; and a reflective electrode formed on the transparent electrode.

Abstract: An array substrate for a liquid crystal display device includes a flexible substrate, a buffer layer on the flexible substrate, a thin film transistor including a gate electrode, a source electrode and a drain electrode on the buffer layer, and a pixel electrode on the thin film transistor.

Abstract: A method of forming a thin film transistor includes forming a gate electrode on a substrate, forming an organic layer over the substrate having the gate electrode, curing the organic layer in a first chamber, transferring the substrate having the organic layer from the first chamber to a second chamber without exposing the substrate having the organic layer to oxygen atmosphere during transfer, forming an active layer on the organic layer in the second chamber; and forming source and drain electrodes on the active layer.

Abstract: An analog/digital (A/D) converting circuit is provided that stabilizes system operation, reduces power consumption in an analog circuit region and uses a selected metal-to-metal capacitor, which has a small parasitic capacitance value. The A/D converting circuit includes a first sample/hold amplifier for sampling/holding an analog input signal, a switch for selecting one of a signal outputted from the first sample/hold amplifier and a feedback signal and an A/D sub-converter for converting an analog signal outputted from the switch to a digital signal. A multiplying D/A converting block converts an output signal from the A/D sub-converter to an analog signal and amplifies a difference value obtained between the analog signal and the analog signal outputted from the switch. A second sample/hold amplifier samples/holds a signal outputted from the multiplying D/A converting block and outputs the feedback signal to the switch.

Abstract: A b-bit digital and analog converter of the present invention is relatively simple and non-expensive and monotonic with relatively high differential and integral non-linearities. The converter uses weighed current ratio to achieve decrease the number of current cells to provide a cumulative current which corresponds to the digital value on the input data bus. The converter includes preferably a plurality of upper current cells, at least one unit current cell and at least one lower current cell. The currents produced by the upper, lower and unit current cells have a predetermined weighed current ratio, and the number of the upper, unit and lower current cells are based on the weighed current ratio. Further, the plurality of upper current cells have a prescribed layout, and includes a group of cells where each current cell has reverse layout orientation compared to adjacent cells.

Abstract: A frequency multiplier for controlling a pulse width maintains a desired pulse width irrespective of a semiconductor fabrication process variation. The multiplier includes a delay unit for delaying an input signal and an exclusive OR-gate for exclusively ORing the delayed signal from the delay unit and the input signal. The multiplier further includes inverters that sequentially invert the signal from the exclusive OR-gate and a low-pass filter that filters the signal from the exclusive OR-gate. A high electric potential comparator and low electric potential comparator are for comparing the signal from the low-pass filter with first and second voltage limits to output first and second switch control signals to the delay unit, respectively.

Abstract: A b-bit digital and analog converter of the present invention is relatively simple and non-expensive and monotonic with relatively high differential and integral non-linearities. The converter uses weighed current ratio to achieve decrease the number of current cells to provide a cumulative current which corresponds to the digital value on the input data bus. The converter includes preferably a plurality of upper current cells, at least one unit current cell and at least one lower current cell. The currents produced by the upper, lower and unit current cells have a predetermined weighed current ratio, and the number of the upper, unit and lower current cells are based on the weighed current ratio. Further, the plurality of upper current cells have a prescribed layout, and includes a group of cells where each current cell has reverse layout orientation compared to adjacent cells.

Abstract: A b-bit digital and analog converter of the present invention is relatively simple and non-expensive and monotonic with relatively high differential and integral non-linearities. The converter uses weighed current ratio to achieve decrease the number of current cells to provide a cumulative current which corresponds to the digital value on the input data bus. The converter includes preferably a plurality of upper current cells, at least one unit current cell and at least one lower current cell. The currents produced by the upper, lower and unit current cells have a predetermined weighed current ratio, and the number of the upper, unit and lower current cells are based on the weighed current ratio. Further, the plurality of upper current cells have a prescribed layout, and includes a group of cells where each current cell has reverse layout orientation compared to adjacent cells.

Abstract: A video digital/analog signal converter having a structure whereby the analog elements of the video D/A converter are separated from the digital elements of the video D/A converter and of arranging current cells of each of channels to one well. The present invention includes a Red-decoder group, a Green-decoder group, and a Blue-decoder group for decoding digital data of R, G, and B color channels, respectively, which are inputted in a state synchronized to R, G, and B clocks for controlling digital data of Red, Green, and Blue color channels. A plurality of data buses transfers digital data of R, G, and B color channel decoded at the R, G, and B decoder groups. First R, G, and B current cell matrixes generate current in response to digital data of the R, G, and B color data inputted from the data buses. Second R, G, and B current cell matrixes generates current in response to digital data of the R, G, and B color channel inputted through the data buses.

Abstract: A digital/analog converter comprising a coarse bit decoder for decoding M higher-order bits of an (M+N)-bit input digital signal, a fine bit decoder for decoding N lower-order bits of the (M+N)-bit input digital signal, a current scaler for classifying currents into a plurality of steps and outputting a selected one of the classified step currents in response to an output signal from the coarse bit decoder, a current/voltage converter for converting an output current from the current scaler into a voltage, a voltage elevator for outputting an output voltage from the current/voltage converter as a reference voltage, a voltage divider for dividing the reference voltage from the voltage elevator into a plurality of steps and outputting a selected one of the divided step voltages in response to a switching control signal from the fine bit decoder, and a current compensator for compensating for an amount of current flowing through the voltage divider to make the reference voltage in the voltage divider constant in