Abstract: A method for fabricating a large-area nanoscale pattern includes: forming multilayer main thin films isolated by passivation layers; patterning a first main thin film to form a first main pattern; forming a first spacer pattern with respect to the first main pattern; and forming a second main pattern by transferring the first spacer pattern onto a second main thin film. By using multilayer main thin films isolated by different passivation films, spacer lithography capable of reducing a pattern pitch can be repetitively performed, and the pattern pitch is repetitively reduced without shape distortion after formation of micrometer-scale patterns, thereby forming nanometer-scale fine patterns uniformly over a wide area.

Abstract: An array substrate for an LCD device includes a first TFT including a first semiconductor layer, a first gate electrode, wherein the first gate electrode is directly over the first semiconductor layer; a first protrusion extending from the first gate electrode along an edge of the first semiconductor layer; a second TFT including a second semiconductor layer, a second gate electrode, wherein the second gate electrode is directly over the second semiconductor layer; a second protrusion extending from the second gate electrode along an edge of the second semiconductor layer; a third TFT connected to crossed data and gate lines including a third semiconductor layer, a third gate electrode, wherein the third gate electrode is directly over the third semiconductor layer; a third protrusion extending from the third gate electrode along an edge of the third semiconductor layer; and a pixel electrode.

Abstract: An image sensor capable of canceling crosstalk without reduction of a signal to noise ratio (SNR) to improve a sensitivity includes a plurality of light detection units and a filter array including a plurality of filters, with each of the plurality of filters being deposited on a corresponding one of the light detection units. The filter array includes a green filter used to transmit a green component of an incident light, a yellow filter used to transmit a yellow component of the incident light, and a cyan filter used to transmit a cyan component of the incident light.

Abstract: An electrophoretic display device includes a lower substrate having a plurality of pixel electrodes on the lower substrate, having a lower organic layer on the pixel electrodes and the lower substrate, and having partition walls formed on the lower organic layer to surround the pixel electrodes, the pixel electrodes and partition walls defining a plurality of sub-pixels; an upper substrate bonded with the lower substrate, the upper substrate having a common electrode formed thereon with an upper organic layer on the common electrode; and electrophoretic dispersion liquid comprising a plurality of charged particles colored to display colors, the electrophoretic dispersion liquid disposed in the plurality of the sub-pixels defined by the pixel electrodes and the partition walls.

Abstract: A thin film transistor array substrate and a method for manufacturing the thin film transistor array substrate are disclosed. Specifically, a thin film transistor array may be formed using a reduced number of masks.

Abstract: A method for fabricating an LCD device comprising: providing first and second substrates; forming an active area having a source region, a drain region, a channel region, and a storage region on the first substrate; forming a first insulation film on the first substrate; forming a gate electrode, a gate line and a pixel electrode on the first substrate and forming a storage line partially overlapping with the storage region; forming a second insulation film on the first substrate; forming first and second contact holes exposing a portion of the source and drain regions by removing a portion of the first and second insulation films and exposing the pixel electrode by removing the second insulation film on the pixel electrode; and forming a source electrode electrically connected to the source region through the first contact hole and forming a drain electrode electrically connected to the drain region through the second contact hole and partially overlapping with the storage line.

Abstract: An image tuning system and method using a stored image signal, in which the image tuning system includes an image processing device and an external device. The image processing device outputs a third image signal by processing a first or second image signal according to a tuning parameter. The external device calculates the tuning parameter based on the third image signal. The image processing device receives the second image from the external device in a tuning mode and processes the second image. The image tuning system and the image tuning method using the stored raw image signal can prevent wasting time and extra efforts are not required for setting the tuning parameter adaptive to various weather conditions by repeatedly setting the tuning parameter with respect to a picture image.

Abstract: A method for fabricating an LCD device including: providing first and second substrates; forming an active area having a source region, a drain region, and a channel region on the first substrate and a storage line having a first region and a second region; forming a first insulation film on the first substrate; forming a gate electrode and a gate line, and forming a pixel electrode overlapping with the first region of the storage line on the first substrate; forming a second insulation film on the first substrate; forming a contact hole exposing a portion of the source and drain regions by removing the first and second insulation films and exposing the pixel electrode by removing the second insulation film on the pixel electrode; and forming a source electrode electrically connected to the source region and a drain electrode electrically connected to the drain region through the contact hole.

Abstract: A display device includes a substrate having a display region and a driver region; a gate line and a data line crossing each other to define a pixel region in the display region, the pixel region having a pixel electrode; an insulation layer between the gate line and the data line; a first thin film transistor in the display region; and a second thin film transistor having a first polarity and a third thin film transistor having a second polarity in the driver region, wherein the pixel electrode, the gate line and the gate electrodes of the first to third thin film transistors have a double-layer structure in which a metal layer is formed on a transparent conductive layer, and the transparent conductive layer of the pixel electrode is exposed through a transmission hole passing through the insulation layer and the metal layer in the pixel region.

Abstract: A communication apparatus and method for operating a communication apparatus are provided. The communication apparatus is configured to determine whether a sub-frequency band causing interference is present among sub-frequency bands included in a reception frequency band group, and to send to another communication apparatus an interference avoidance request signal which requests the other communication apparatus to transmit signals by use of remaining sub-frequency bands except the sub-frequency band causing interference, leading to simpler and more efficient interference avoidance.

Abstract: An apparatus for canceling a fixed pattern noise in a CMOS image sensor includes a storage device, a fixed pattern noise operation circuit, and a fixed pattern noise canceling circuit. The storage device stores first reference fixed pattern noises operated in a vertical blank section of an (n?1)th frame. The fixed pattern noise operation circuit calculates second reference fixed pattern noises based on the first reference fixed pattern noises stored in the storage device and blank fixed pattern noises output in a vertical blank section of an n-th frame and outputs the second reference fixed pattern noises to the storage device to update the first reference fixed pattern noises to the second reference fixed pattern noises.

Abstract: Disclosed is an electrophoretic display device and a fabrication method thereof, and the electrophoretic display device may include a thin-film transistor formed on a lower substrate, a pixel electrode connected to the thin-film transistor, side electrodes formed at periphery of the pixel electrode, a partition wall formed on the side electrode, fluid including anelectrophoretic particles formed between the partition walls, and an upper substrate adhered on the lower substrate and formed with a common electrode on the rear surface thereof.

Abstract: An array substrate for an LCD device includes a first TFT including a first semiconductor layer, a first gate electrode, wherein the first gate electrode is directly over the first semiconductor layer; a first protrusion extending from the first gate electrode along an edge of the first semiconductor layer; a second TFT including a second semiconductor layer, a second gate electrode, wherein the second gate electrode is directly over the second semiconductor layer; a second protrusion extending from the second gate electrode along an edge of the second semiconductor layer; a third TFT connected to crossed data and gate lines including a third semiconductor layer, a third gate electrode, wherein the third gate electrode is directly over the third semiconductor layer; a third protrusion extending from the third gate electrode along an edge of the third semiconductor layer; and a pixel electrode.

Abstract: A flexible display substrate includes: a thin film transistor on the flexible substrate, the thin film transistor including a gate electrode, a gate insulating layer insulating the gate electrode, a channel layer on the gate insulating layer, a source electrode connected with the channel layer, and a drain electrode connected with the channel layer; a first stress absorbing layer below the thin film transistor; a first protection layer on the first stress absorbing layer; a second stress absorbing layer on the thin film transistor; a second protection layer on the second stress absorbing layer; and a pixel electrode on the second protection layer, the pixel electrode being connected with the drain electrode.

Abstract: A TFT array substrate includes a gate line, a gate electrode, and a gate pad on a substrate, each of which including stacked layers of a first metal and a transparent conductive material, respectively, a pixel electrode formed of the transparent conductive material, a gate insulation layer on the substrate including the gate line and the gate electrode, the gate insulation layer having first and second open areas exposing the pixel electrode and the gate pad, a semiconductor layer formed on the gate insulation layer, a data line crossing the gate line to define a sub-pixel region, a source electrode diverging from the data line, a drain electrode spaced apart from the source electrode and connected to the pixel electrode, a data pad at an end of the data line; a masking layer covering the data line, the source electrode and the drain electrode, and an oxidation-prevention layer covering the gate pad and the data pad.

Abstract: A method for fabricating an LCD device includes forming an active layer having a source region, a drain region and a channel region on the first substrate; forming first and second conductive layers on the first substrate; forming a gate electrode, a gate line and a pixel electrode by patterning the first and second conductive layers, the gate electrode and the gate line being formed as a dual layer having the first and second conductive layers and the pixel electrode being formed of the first conductive layer; forming a contact hole exposing a portion of the source and drain regions; forming a source and drain electrodes electrically connected to the source and drain regions through the contact hole; and forming a liquid crystal layer between the first and second substrates.

Abstract: A thin film transistor array substrate and a method for manufacturing the thin film transistor array substrate are disclosed. Specifically, a thin film transistor array may be formed using a reduced number of masks.

Abstract: A method for fabricating a liquid crystal display (LCD) device comprises forming an active pattern and a data line on a substrate, the active pattern including a source, a drain, and a channel regions; a first insulation film on a portion of the substrate; forming a gate electrode in a portion of the active pattern where the first insulation film is formed; a second insulation film on the substrate; forming a plurality of first contact holes exposing a portion of the source and drain regions and a second contact hole exposing a portion of the data line; forming a source electrode from a transparent conductive material connected to a source region within the respective first contact hole and a data line within the second contact hole; and forming a pixel and a drain electrodes from the transparent conductive material connected to a drain region within the respective first contact hole.

Abstract: A method of manufacturing a liquid crystal display device includes attaching a flexible substrate and a base substrate using an adhesive therebetween, the base substrate including substantially pure iron; forming a plurality of thin films on a surface of the flexible substrate attached to the base substrate, the surface of the flexible substrate opposite to the attached surface of the flexible substrate; and etching the base substrate after forming the plurality of thin films.

Abstract: An array substrate for an LCD device includes a first TFT including a first semiconductor layer, a first gate electrode, wherein the first gate electrode is directly over the first semiconductor layer; a first protrusion extending from the first gate electrode along an edge of the first semiconductor layer; a second TFT including a second semiconductor layer, a second gate electrode, wherein the second gate electrode is directly over the second semiconductor layer; a second protrusion extending from the second gate electrode along an edge of the second semiconductor layer; a third TFT connected to crossed data and gate lines including a third semiconductor layer, a third gate electrode, wherein the third gate electrode is directly over the third semiconductor layer; a third protrusion extending from the third gate electrode along an edge of the third semiconductor layer; and a pixel electrode.