Abstract: Semiconductor devices may include a semiconductor substrate with a first semiconductor fin aligned end-to-end with a second semiconductor with a recess between facing ends of the first and second semiconductor fins. A first insulator pattern is formed adjacent sidewalls of the first and second semiconductor fins and a second insulator pattern is formed within the first recess. The second insulator pattern may have a top surface higher than a top surface of the first insulator pattern, such as to the height of the top surface of the fins (or higher or lower). First and second gates extend along sidewalls and a top surface of the first semiconductor fin. A dummy gate electrode may be formed on the top surface of the second insulator. Methods for manufacture of the same and modifications are also disclosed.

Abstract: A vertical memory device includes a substrate, a plurality of channels on the substrate and extending in a first direction that is vertical to a top surface of the substrate, a plurality of gate lines stacked on top of each other on the substrate, a plurality of wiring over the gate lines and electrically connected to the gate lines, and an identification pattern on the substrate at the same level as a level of at least one of the wirings. The gate lines surround the channels. The gate lines are spaced apart from each other along the first direction.

Abstract: Methods for fabricating a semiconductor device include forming a composite film, forming a rough pattern on the composite film, forming a smooth pattern by subjecting the rough pattern to ion implantation and a plasma treatment, and patterning the composite film using the smooth pattern as a first mask.

Abstract: A semiconductor device includes a compound semiconductor layer, where the compound semiconductor layer includes separate fin patterns in separate regions. The separate fin patterns may include different materials. The separate fin patterns may include different dimensions, including one or more of width and height of one or more portions of the fin patterns. The separate fin patterns may include an upper pattern and a lower pattern. The upper pattern and the lower pattern may include different materials. The upper pattern and the lower pattern may include different dimensions. Separate regions may include separate ones of an NMOS or a PMOS. The semiconductor device may include gate electrodes on the compound semiconductor layer. Separate gate electrodes may intersect the separate fin patterns.

Abstract: A method of manufacturing a semiconductor device may include forming a sacrificial layer on a substrate including a first region and a second region, forming a first pattern on the sacrificial layer of the second region, forming a second pattern on the sacrificial layer of the first region, forming first upper spacers on opposite sidewalls of the second pattern, removing the second pattern, etching the first sacrificial layer of the first region using the first upper spacers as an etch mask to form a third pattern, etching the first sacrificial layer of the second region using the first pattern as an etch mask to form a fourth pattern, forming first lower spacers at either side of the third pattern, forming second spacers on opposite sidewalls of the fourth pattern, removing the third pattern and the fourth pattern, and etching the substrate using the first lower spacers and the second spacers as etch masks.

Abstract: Semiconductor devices may include a semiconductor substrate with a first semiconductor fin aligned end-to-end with a second semiconductor with a recess between facing ends of the first and second semiconductor fins. A first insulator pattern is formed adjacent sidewalls of the first and second semiconductor fins and a second insulator pattern is formed within the first recess. The second insulator pattern may have a top surface higher than a top surface of the first insulator pattern, such as to the height of the top surface of the fins (or higher or lower). First and second gates extend along sidewalls and a top surface of the first semiconductor fin. A dummy gate electrode may be formed on the top surface of the second insulator. Methods for manufacture of the same and modifications are also disclosed.

Abstract: The disclosure provides semiconductor devices and methods of manufacturing the same. The method includes etching a substrate using a first mask pattern formed on the substrate to form a trench, forming a preliminary device isolation pattern filling the trench and including first and second regions having first thicknesses, forming a second mask pattern on the first region, etching an upper portion of the second region and a portion of the first mask pattern, which are exposed by the second mask pattern, to form a second region having a second thickness smaller than the first thickness, removing the first and second mask patterns, and etching upper portions of the first region and the second region having the second thickness to form a device isolation pattern defining preliminary fin-type active patterns. An electronic device including a semiconductor device and a manufacturing method thereof are also disclosed.

Abstract: Disclosed is a method for manufacturing an electrode, which comprises drying an electrode sheet including a current collector and an electrode active material slurry coated to the current collector and containing an electrode active material, a binder and a solvent, wherein the electrode sheet is dried by a mid-infrared lamp which irradiates mid-infrared rays with a wavelength of 1 ?m to 3 ?m to the electrode sheet, and a surface temperature of the electrode sheet has a constant region in the range of 50° C. to 70° C. Since an electrode is dried by using a mid-infrared lamp, the electrode may be uniformly dried, and an adhesion force between the electrode active material layer and the current collector may be greatly improved, which allows great enhancement of characteristics of a battery to which the electrode is applied.

Abstract: Semiconductor devices may include a semiconductor substrate with a first semiconductor fin aligned end-to-end with a second semiconductor with a recess between facing ends of the first and second semiconductor fins. A first insulator pattern is formed adjacent sidewalls of the first and second semiconductor fins and a second insulator pattern is formed within the first recess. The second insulator pattern may have a top surface higher than a top surface of the first insulator pattern, such as to the height of the top surface of the fins (or higher or lower). First and second gates extend along sidewalls and a top surface of the first semiconductor fin. A dummy gate electrode may be formed on the top surface of the second insulator. Methods for manufacture of the same and modifications are also disclosed.

Abstract: Semiconductor devices may include a semiconductor substrate with a first semiconductor fin aligned end-to-end with a second semiconductor with a recess between facing ends of the first and second semiconductor fins. A first insulator pattern is formed adjacent sidewalls of the first and second semiconductor fins and a second insulator pattern is formed within the first recess. The second insulator pattern may have a top surface higher than a top surface of the first insulator pattern, such as to the height of the top surface of the fins (or higher or lower). First and second gates extend along sidewalls and a top surface of the first semiconductor fin. A dummy gate electrode may be formed on the top surface of the second insulator. Methods for manufacture of the same and modifications are also disclosed.

Abstract: The disclosure provides semiconductor devices and methods of manufacturing the same. The method includes etching a substrate using a first mask pattern formed on the substrate to form a trench, forming a preliminary device isolation pattern filling the trench and including first and second regions having first thicknesses, forming a second mask pattern on the first region, etching an upper portion of the second region and a portion of the first mask pattern, which are exposed by the second mask pattern, to form a second region having a second thickness smaller than the first thickness, removing the first and second mask patterns, and etching upper portions of the first region and the second region having the second thickness to form a device isolation pattern defining preliminary fin-type active patterns. An electronic device including a semiconductor device and a manufacturing method thereof are also disclosed.

Abstract: Semiconductor devices may include a semiconductor substrate with a first semiconductor fin aligned end-to-end with a second semiconductor with a recess between facing ends of the first and second semiconductor fins. A first insulator pattern is formed adjacent sidewalls of the first and second semiconductor fins and a second insulator pattern is formed within the first recess. The second insulator pattern may have a top surface higher than a top surface of the first insulator pattern, such as to the height of the top surface of the fins (or higher or lower). First and second gates extend along sidewalls and a top surface of the first semiconductor fin. A dummy gate electrode may be formed on the top surface of the second insulator. Methods for manufacture of the same and modifications are also disclosed.

Abstract: A method of fabricating a semiconductor memory device includes forming a hard mask pattern using a damascene method on a lower mold layer stacked on a substrate and etching the lower mold layer using the hard mask pattern as an etch mask to define a protrusion under the hard mask pattern. A support pattern is formed on a top surface of the etched lower mold layer, the top surface of the etched lower mold layer being located at a lower level than a top surface of the protrusion. A lower electrode supported by the support pattern is formed.

Abstract: Semiconductor devices may include a semiconductor substrate with a first semiconductor fin aligned end-to-end with a second semiconductor with a recess between facing ends of the first and second semiconductor fins. A first insulator pattern is formed adjacent sidewalls of the first and second semiconductor fins and a second insulator pattern is formed within the first recess. The second insulator pattern may have a top surface higher than a top surface of the first insulator pattern, such as to the height of the top surface of the fins (or higher or lower). First and second gates extend along sidewalls and a top surface of the first semiconductor fin. A dummy gate electrode may be formed on the top surface of the second insulator. Methods for manufacture of the same and modifications are also disclosed.

Abstract: A semiconductor device includes a lower electrode, a supporting member enclosing at least an upper portion of the lower electrode, a dielectric layer on the lower electrode and the supporting member, and an upper electrode disposed on the dielectric layer. The supporting member may have a first portion that extends over an upper part of the sidewall of the lower electrode, and a second portion covering the upper surface of the lower electrode. The first portion of the supporting member protrudes above the lower electrode.

Abstract: Provided are a nonvolatile memory device and a method of operating the same. The nonvolatile memory device in accordance with an embodiment of the inventive concept may include a string select line; a ground select line; a dummy word line adjacent to the ground select line; a first word line adjacent to the dummy word line; and a second word line disposed between the string select line and the first word line. The nonvolatile memory device is configured to apply a voltage to the dummy word line. When programming a memory cell connected to the first word line, a first dummy word line voltage lower than a voltage applied to the second word line is applied to the dummy word line. When programming a memory cell connected to the second word line, a second dummy word line voltage between a voltage applied to the first word line and the first dummy word line voltage is applied to the dummy word line.

Abstract: A method of fabricating a semiconductor memory device includes forming a hard mask pattern using a damascene method on a lower mold layer stacked on a substrate and etching the lower mold layer using the hard mask pattern as an etch mask to define a protrusion under the hard mask pattern. A support pattern is formed on a top surface of the etched lower mold layer, the top surface of the etched lower mold layer being located at a lower level than a top surface of the protrusion. A lower electrode supported by the support pattern is formed.

Abstract: Provided are a nonvolatile memory device and a method of operating the same. The nonvolatile memory device in accordance with an embodiment of the inventive concept may include a string select line; a ground select line; a dummy word line adjacent to the ground select line; a first word line adjacent to the dummy word line; and a second word line disposed between the string select line and the first word line. The nonvolatile memory device is configured to apply a voltage to the dummy word line. When programming a memory cell connected to the first word line, a first dummy word line voltage lower than a voltage applied to the second word line is applied to the dummy word line. When programming a memory cell connected to the second word line, a second dummy word line voltage between a voltage applied to the first word line and the first dummy word line voltage is applied to the dummy word line.

Abstract: A semiconductor device includes a lower electrode, a supporting member enclosing at least an upper portion of the lower electrode, a dielectric layer on the lower electrode and the supporting member, and an upper electrode disposed on the dielectric layer. The supporting member may have a first portion that extends over an upper part of the sidewall of the lower electrode, and a second portion covering the upper surface of the lower electrode. The first portion of the supporting member protrudes above the lower electrode.

Abstract: A back light unit, in which bright lines produced from point light sources, light emitting diodes, in an oblique direction are removed, so that brightness can be uniformly maintained at a liquid crystal panel. The back light unit includes a prism light guide plate, light emitting diodes provided on one side of the prism light guide plate, and a bright-line dead section provided to the prism light guide plate so as to uniformly scatter light of each light condensing section generated by light emitted from the light emitting diodes, to prevent a spectrum of the light in a specific direction, and to prevent bright lines from being produced.