Patents by Inventor Yong-Joon Choi
Yong-Joon Choi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20180047951Abstract: The present disclosure discloses a battery pack suitable for improving cooling efficiency of a cooling duct for battery cells in a battery module by reducing a sealing area between a lower case and an upper case configured to fully surround the battery module. The battery pack according to the present disclosure includes a battery module including battery cells sequentially stacked and a cooling duct located on side of the battery cells; a lower case configured to load the battery module and the cooling duct therein; and an upper case coupled to the lower case so as to cover the battery module and the cooling duct, the upper case having a vent structure on the cooling duct. The vent structure has, on the cooling duct, an inner air passage unit opened at a sidewall of the upper case, and an outer air passage unit inserted into the inner air passage unit.Type: ApplicationFiled: June 15, 2016Publication date: February 15, 2018Applicant: LG CHEM, LTD.Inventors: Gang-U LEE, Sang-Yoon JEONG, Jun-Yeob SEONG, Ki-Youn KIM, Sung-Chun YU, Duck-Hee MOON, Jung-Hang LEE, Yong-Joon CHOI
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Publication number: 20180040863Abstract: The present disclosure relates to a battery pack having improved assemblability, processability, and productivity, and configured to reduce manufacturing costs and enhance the scalability and durability of a pack case. The battery pack includes: a cell assembly including a plurality of secondary cells and a plurality of cartridges, the cartridges being configured to be stacked on one another and to accommodate the secondary cells while surrounding outer circumferential portions of the secondary cells from outsides of the secondary cells; a lower housing having an empty inner space to accommodate the cell assembly in the inner space, the lower housing being opened on an upper side thereof; a lower end plate including a plate-shaped metallic material and placed in surface contact with a lower surface of the lower housing; and a lower cover placed on a lower portion of the lower end plate to cover the lower end plate, the lower cover being fixedly coupled to the lower housing.Type: ApplicationFiled: April 28, 2016Publication date: February 8, 2018Applicant: LG CHEM, LTD.Inventors: Ki-Youn KIM, Duck-Hee MOON, Jun-Yeob SEONG, Sung-Chun YU, Gang-U LEE, Jung-Hang LEE, Sang-Yoon JEONG, Yong-Joon CHOI
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Publication number: 20170271351Abstract: A vertical memory device includes a substrate, a plurality of channels on the substrate and extending in a first direction that is vertical to a top surface of the substrate, a plurality of gate lines stacked on top of each other on the substrate, a plurality of wiring over the gate lines and electrically connected to the gate lines, and an identification pattern on the substrate at the same level as a level of at least one of the wirings. The gate lines surround the channels. The gate lines are spaced apart from each other along the first direction.Type: ApplicationFiled: June 2, 2017Publication date: September 21, 2017Inventors: Seung-Min Lee, Hoo-Sung Cho, Jeong-Seok Nam, Jong-Min Lee, Yong-Joon Choi
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Patent number: 9698151Abstract: A vertical memory device includes a substrate, a plurality of channels on the substrate and extending in a first direction that is vertical to a top surface of the substrate, a plurality of gate lines stacked on top of each other on the substrate, a plurality of wiring over the gate lines and electrically connected to the gate lines, and an identification pattern on the substrate at the same level as a level of at least one of the wirings. The gate lines surround the channels. The gate lines are spaced apart from each other along the first direction.Type: GrantFiled: June 10, 2016Date of Patent: July 4, 2017Assignee: Samsung Electronics Co., Ltd.Inventors: Seung-Min Lee, Hoo-Sung Cho, Jeong-Seok Nam, Jong-Min Lee, Yong-Joon Choi
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Patent number: 9627542Abstract: Semiconductor devices may include a semiconductor substrate with a first semiconductor fin aligned end-to-end with a second semiconductor with a recess between facing ends of the first and second semiconductor fins. A first insulator pattern is formed adjacent sidewalls of the first and second semiconductor fins and a second insulator pattern is formed within the first recess. The second insulator pattern may have a top surface higher than a top surface of the first insulator pattern, such as to the height of the top surface of the fins (or higher or lower). First and second gates extend along sidewalls and a top surface of the first semiconductor fin. A dummy gate electrode may be formed on the top surface of the second insulator. Methods for manufacture of the same and modifications are also disclosed.Type: GrantFiled: May 2, 2016Date of Patent: April 18, 2017Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Byoung-Ho Kwon, Cheol Kim, Ho-Young Kim, Se-Jung Park, Myeong-Cheol Kim, Bo-Kyeong Kang, Bo-Un Yoon, Jae-Kwang Choi, Si-Young Choi, Suk-Hoon Jeong, Geum-Jung Seong, Hee-Don Jeong, Yong-Joon Choi, Ji-Eun Han
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Publication number: 20170103993Abstract: A vertical memory device includes a substrate, a plurality of channels on the substrate and extending in a first direction that is vertical to a top surface of the substrate, a plurality of gate lines stacked on top of each other on the substrate, a plurality of wiring over the gate lines and electrically connected to the gate lines, and an identification pattern on the substrate at the same level as a level of at least one of the wirings. The gate lines surround the channels. The gate lines are spaced apart from each other along the first direction.Type: ApplicationFiled: June 10, 2016Publication date: April 13, 2017Inventors: Seung-Min LEE, Hoo-Sung CHO, Jeong-Seok NAM, Jong-Min LEE, Yong-Joon CHOI
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Publication number: 20170040221Abstract: Methods for fabricating a semiconductor device include forming a composite film, forming a rough pattern on the composite film, forming a smooth pattern by subjecting the rough pattern to ion implantation and a plasma treatment, and patterning the composite film using the smooth pattern as a first mask.Type: ApplicationFiled: June 29, 2016Publication date: February 9, 2017Applicant: Samsung Electronics Co., Ltd.Inventors: Cheol KIM, Dong-Hoon KHANG, Do-Hyoung KIM, Seung-Jin MUN, Yong-Joon CHOI, Seung-Mo HA
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Publication number: 20160315085Abstract: A semiconductor device includes a compound semiconductor layer, where the compound semiconductor layer includes separate fin patterns in separate regions. The separate fin patterns may include different materials. The separate fin patterns may include different dimensions, including one or more of width and height of one or more portions of the fin patterns. The separate fin patterns may include an upper pattern and a lower pattern. The upper pattern and the lower pattern may include different materials. The upper pattern and the lower pattern may include different dimensions. Separate regions may include separate ones of an NMOS or a PMOS. The semiconductor device may include gate electrodes on the compound semiconductor layer. Separate gate electrodes may intersect the separate fin patterns.Type: ApplicationFiled: February 22, 2016Publication date: October 27, 2016Inventors: Yong-Joon CHOI, Tae-Yong KWON, Mirco CANTORO, Chang-Jae YANG, Dong-Hoon KHANG, Woo-Ram KIM, Cheol KIM, Seung-Jin MUN, Seung-Mo HA, Do-Hyoung KIM, Seong-Ju KIM, So-Ra YOU, Woong-ki HONG
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Publication number: 20160307803Abstract: A method of manufacturing a semiconductor device may include forming a sacrificial layer on a substrate including a first region and a second region, forming a first pattern on the sacrificial layer of the second region, forming a second pattern on the sacrificial layer of the first region, forming first upper spacers on opposite sidewalls of the second pattern, removing the second pattern, etching the first sacrificial layer of the first region using the first upper spacers as an etch mask to form a third pattern, etching the first sacrificial layer of the second region using the first pattern as an etch mask to form a fourth pattern, forming first lower spacers at either side of the third pattern, forming second spacers on opposite sidewalls of the fourth pattern, removing the third pattern and the fourth pattern, and etching the substrate using the first lower spacers and the second spacers as etch masks.Type: ApplicationFiled: March 28, 2016Publication date: October 20, 2016Inventors: Seung-Jin MUN, Dong-Hoon KHANG, Woo-Ram KIM, Cheol KIM, Dong-Seok LEE, Yong-Joon CHOI, Seung-Mo HA, Do-Hyoung KIM
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Publication number: 20160247925Abstract: Semiconductor devices may include a semiconductor substrate with a first semiconductor fin aligned end-to-end with a second semiconductor with a recess between facing ends of the first and second semiconductor fins. A first insulator pattern is formed adjacent sidewalls of the first and second semiconductor fins and a second insulator pattern is formed within the first recess. The second insulator pattern may have a top surface higher than a top surface of the first insulator pattern, such as to the height of the top surface of the fins (or higher or lower). First and second gates extend along sidewalls and a top surface of the first semiconductor fin. A dummy gate electrode may be formed on the top surface of the second insulator. Methods for manufacture of the same and modifications are also disclosed.Type: ApplicationFiled: May 2, 2016Publication date: August 25, 2016Inventors: Byoung-Ho KWON, Cheol KIM, Ho-Young KIM, Se-Jung PARK, Myeong-Cheol KIM, Bo-Kyeong KANG, Bo-Un YOON, Jae-Kwang CHOI, Si-Young CHOI, Suk-Hoon JEONG, Geum-Jung SEONG, Hee-Don JEONG, Yong-Joon CHOI, Ji-Eun HAN
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Patent number: 9312181Abstract: The disclosure provides semiconductor devices and methods of manufacturing the same. The method includes etching a substrate using a first mask pattern formed on the substrate to form a trench, forming a preliminary device isolation pattern filling the trench and including first and second regions having first thicknesses, forming a second mask pattern on the first region, etching an upper portion of the second region and a portion of the first mask pattern, which are exposed by the second mask pattern, to form a second region having a second thickness smaller than the first thickness, removing the first and second mask patterns, and etching upper portions of the first region and the second region having the second thickness to form a device isolation pattern defining preliminary fin-type active patterns. An electronic device including a semiconductor device and a manufacturing method thereof are also disclosed.Type: GrantFiled: November 3, 2014Date of Patent: April 12, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Yong-Joon Choi, Myeongcheol Kim, Cheol Kim, GeumJung Seong, Hak-Sun Lee, Haegeon Jung, Ji-Eun Han
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Publication number: 20160093880Abstract: Disclosed is a method for manufacturing an electrode, which comprises drying an electrode sheet including a current collector and an electrode active material slurry coated to the current collector and containing an electrode active material, a binder and a solvent, wherein the electrode sheet is dried by a mid-infrared lamp which irradiates mid-infrared rays with a wavelength of 1 ?m to 3 ?m to the electrode sheet, and a surface temperature of the electrode sheet has a constant region in the range of 50° C. to 70° C. Since an electrode is dried by using a mid-infrared lamp, the electrode may be uniformly dried, and an adhesion force between the electrode active material layer and the current collector may be greatly improved, which allows great enhancement of characteristics of a battery to which the electrode is applied.Type: ApplicationFiled: September 25, 2015Publication date: March 31, 2016Inventors: Jin-Oh SONG, Yong-Joon CHOI, Won-Chan PARK, Kyoung-Ho KIM
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Publication number: 20160064380Abstract: Semiconductor devices may include a semiconductor substrate with a first semiconductor fin aligned end-to-end with a second semiconductor with a recess between facing ends of the first and second semiconductor fins. A first insulator pattern is formed adjacent sidewalls of the first and second semiconductor fins and a second insulator pattern is formed within the first recess. The second insulator pattern may have a top surface higher than a top surface of the first insulator pattern, such as to the height of the top surface of the fins (or higher or lower). First and second gates extend along sidewalls and a top surface of the first semiconductor fin. A dummy gate electrode may be formed on the top surface of the second insulator. Methods for manufacture of the same and modifications are also disclosed.Type: ApplicationFiled: November 5, 2015Publication date: March 3, 2016Inventors: Byoung-Ho KWON, Cheol KIM, Ho-Young KIM, Se-Jung PARK, Myeong-Cheol KIM, Bo-Kyeong KANG, Bo-Un YOON, Jae-Kwang CHOI, Si-Young CHOI, Suk-Hoon JEONG, Geum-Jung SEONG, Hee-Don JEONG, Yong-Joon CHOI, Ji-Eun HAN
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Patent number: 9190407Abstract: Semiconductor devices may include a semiconductor substrate with a first semiconductor fin aligned end-to-end with a second semiconductor with a recess between facing ends of the first and second semiconductor fins. A first insulator pattern is formed adjacent sidewalls of the first and second semiconductor fins and a second insulator pattern is formed within the first recess. The second insulator pattern may have a top surface higher than a top surface of the first insulator pattern, such as to the height of the top surface of the fins (or higher or lower). First and second gates extend along sidewalls and a top surface of the first semiconductor fin. A dummy gate electrode may be formed on the top surface of the second insulator. Methods for manufacture of the same and modifications are also disclosed.Type: GrantFiled: December 12, 2014Date of Patent: November 17, 2015Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Byoung-Ho Kwon, Cheol Kim, Ho-Young Kim, Se-Jung Park, Myeong-Cheol Kim, Bo-Kyeong Kang, Bo-Un Yoon, Jae-Kwang Choi, Si-Young Choi, Suk-Hoon Jeong, Geum-Jung Seong, Hee-Don Jeong, Yong-Joon Choi, Ji-Eun Han
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Publication number: 20150162247Abstract: The disclosure provides semiconductor devices and methods of manufacturing the same. The method includes etching a substrate using a first mask pattern formed on the substrate to form a trench, forming a preliminary device isolation pattern filling the trench and including first and second regions having first thicknesses, forming a second mask pattern on the first region, etching an upper portion of the second region and a portion of the first mask pattern, which are exposed by the second mask pattern, to form a second region having a second thickness smaller than the first thickness, removing the first and second mask patterns, and etching upper portions of the first region and the second region having the second thickness to form a device isolation pattern defining preliminary fin-type active patterns. An electronic device including a semiconductor device and a manufacturing method thereof are also disclosed.Type: ApplicationFiled: November 3, 2014Publication date: June 11, 2015Inventors: Yong-Joon CHOI, MYEONGCHEOL KIM, CHEOL KIM, GeumJung SEONG, Hak-Sun LEE, Haegeon JUNG, Ji-Eun HAN
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Publication number: 20150097251Abstract: Semiconductor devices may include a semiconductor substrate with a first semiconductor fin aligned end-to-end with a second semiconductor with a recess between facing ends of the first and second semiconductor fins. A first insulator pattern is formed adjacent sidewalls of the first and second semiconductor fins and a second insulator pattern is formed within the first recess. The second insulator pattern may have a top surface higher than a top surface of the first insulator pattern, such as to the height of the top surface of the fins (or higher or lower). First and second gates extend along sidewalls and a top surface of the first semiconductor fin. A dummy gate electrode may be formed on the top surface of the second insulator. Methods for manufacture of the same and modifications are also disclosed.Type: ApplicationFiled: December 12, 2014Publication date: April 9, 2015Inventors: Byoung-Ho KWON, Cheol KIM, Ho-Young KIM, Se-Jung PARK, Myeong-Cheol KIM, Bo-Kyeong KANG, Bo-Un YOON, Jae-Kwang CHOI, Si-Young CHOI, Suk-Hoon JEONG, Geum-Jung SEONG, Hee-Don JEONG, Yong-Joon CHOI, Ji-Eun HAN
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Patent number: 8927384Abstract: A method of fabricating a semiconductor memory device includes forming a hard mask pattern using a damascene method on a lower mold layer stacked on a substrate and etching the lower mold layer using the hard mask pattern as an etch mask to define a protrusion under the hard mask pattern. A support pattern is formed on a top surface of the etched lower mold layer, the top surface of the etched lower mold layer being located at a lower level than a top surface of the protrusion. A lower electrode supported by the support pattern is formed.Type: GrantFiled: February 21, 2012Date of Patent: January 6, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Jong-Kyu Kim, Sangsup Jeong, Kukhan Yoon, Junsoo Lee, SungII Cho, Yong-Joon Choi
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Patent number: 8916460Abstract: Semiconductor devices may include a semiconductor substrate with a first semiconductor fin aligned end-to-end with a second semiconductor with a recess between facing ends of the first and second semiconductor fins. A first insulator pattern is formed adjacent sidewalls of the first and second semiconductor fins and a second insulator pattern is formed within the first recess. The second insulator pattern may have a top surface higher than a top surface of the first insulator pattern, such as to the height of the top surface of the fins (or higher or lower). First and second gates extend along sidewalls and a top surface of the first semiconductor fin. A dummy gate electrode may be formed on the top surface of the second insulator. Methods for manufacture of the same and modifications are also disclosed.Type: GrantFiled: May 5, 2014Date of Patent: December 23, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Byoung-Ho Kwon, Cheol Kim, Ho-Young Kim, Se-Jung Park, Myeong-Cheol Kim, Bo-Kyeong Kang, Bo-Un Yoon, Jae-Kwang Choi, Si-Young Choi, Suk-Hoon Jeong, Geum-Jung Seong, Hee-Don Jeong, Yong-Joon Choi, Ji-Eun Han
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Patent number: 8704283Abstract: A semiconductor device includes a lower electrode, a supporting member enclosing at least an upper portion of the lower electrode, a dielectric layer on the lower electrode and the supporting member, and an upper electrode disposed on the dielectric layer. The supporting member may have a first portion that extends over an upper part of the sidewall of the lower electrode, and a second portion covering the upper surface of the lower electrode. The first portion of the supporting member protrudes above the lower electrode.Type: GrantFiled: March 16, 2010Date of Patent: April 22, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Jong-Kyu Kim, Sang-Sup Jeong, Sung-Gil Choi, Heung-Sik Park, Kuk-Han Yoon, Yong-Joon Choi
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Patent number: 8488386Abstract: Provided are a nonvolatile memory device and a method of operating the same. The nonvolatile memory device in accordance with an embodiment of the inventive concept may include a string select line; a ground select line; a dummy word line adjacent to the ground select line; a first word line adjacent to the dummy word line; and a second word line disposed between the string select line and the first word line. The nonvolatile memory device is configured to apply a voltage to the dummy word line. When programming a memory cell connected to the first word line, a first dummy word line voltage lower than a voltage applied to the second word line is applied to the dummy word line. When programming a memory cell connected to the second word line, a second dummy word line voltage between a voltage applied to the first word line and the first dummy word line voltage is applied to the dummy word line.Type: GrantFiled: March 10, 2011Date of Patent: July 16, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Sung-Hoon Kim, Jai-Hyuk Song, Yong-Joon Choi