Abstract: The present invention relates to a silicon-carbon-based composite negative electrode active material, and a negative electrode for a secondary battery and a lithium secondary battery including the same, and particularly to a silicon-carbon-based composite negative electrode active material, in which physical stability is improved by including a carbon-based core capable of intercalating and deintercalating lithium ions and at least one silicon particle included in the carbon-based core and disposed in the form of being distributed in an outer portion of the carbon-based core, and a negative electrode for a secondary battery and a lithium secondary battery in which life characteristics are improved by including the same.

Abstract: The present invention relates to a negative electrode active material and a secondary battery including the same, and specifically, provides a negative electrode active material particle including a core, which includes a carbon-based active material and an oxygen functional group, and a shell, which surrounds the core and includes a silicon-based active material.

Abstract: An all digital phase locked loop (ADPLL) includes an integer part phase processing circuit that outputs an integer part frequency signal using a first value and a second value. The first value is obtained by counting edges of one of a plurality of output clock signals. The second value indicates current edge position information on an edge position of an external reference clock signal with respect to the plurality of output clock signals. The ADPLL further includes a fraction part phase processing circuit that selects two adjacent output clock signals of the plurality of output clock signals according to a prediction selection signal and that generates a fraction part frequency signal using the fraction part phase signal, the prediction selection signal being generated according to a fraction part phase signal indicating fraction part phase information and a signal indicating the current edge position information.

Abstract: An n-type metal-oxide-semiconductor (NMOS) transistor comprises a graphene channel with a chemically adsorbed nitrogen dioxide (NO2) layer formed thereon. The NMOS transistor may comprise a substrate having a graphene layer formed thereon and a gate stack formed on a portion of the graphene layer disposed in a channel region that further includes a spacer region. The gate stack may comprise the chemically adsorbed NO2 layer formed on the graphene channel, a high-k dielectric formed over the adsorbed NO2 layer, a gate metal formed over the high-k dielectric, and spacer structures formed in the spacer region. The adsorbed NO2 layer formed under the gate and the spacer structures may therefore attract electrons from the graphene channel to turn the graphene-based NMOS transistor off at a gate voltage (Vg) equal to zero, making the graphene-based NMOS transistor suitable for digital logic applications.

Abstract: A method for measuring a semiconductor device is provided. A method for measuring a semiconductor device includes defining an interest area and an acceptable area in a chip area on a wafer; performing a first measurement of the chip area with a spectral imaging device to acquire spectrum data of the chip area; assuming the distribution of the spectrum data of a first pixel in the acceptable area is a normal distribution; calculating a distance from a central point on the normal distribution to second pixels in the interest area; selecting a position of a second pixel having a distance from the central point on the normal distribution greater than a predetermined range, among the second pixels, as a candidate position; and performing a second measurement of the candidate position.

Abstract: A floating-type humidifier container according to an exemplary embodiment of the present invention includes: a lower body having a space portion which is opened at an upper side thereof and accommodates water therein so that a floating-type humidifier floats on the water; and an upper body having an opening portion provided in an upper portion of the upper body so that one end of the floating-type humidifier is penetratively inserted into the opening portion, in which the upper body includes an inclined portion which is formed to be inclined downward toward a center of the space portion so that humidification particles discharged from the floating-type humidifier are introduced into the space portion through the opening portion.

Abstract: Disclosed is an apparatus and method for processing information of multiple cameras.

Abstract: A semiconductor system may include: a command queue suitable for storing a plurality of requests provided from a host according to rank and bank information of the requests; one or more determination units suitable for determining requests having a same row address in response to row address information of the requests stored in the command queue; an arbitration unit suitable for scheduling the plurality of requests according to internal priorities of the requests; a monitoring unit suitable for providing the rank information and row hit information of the plurality of requests outputted according to the scheduling result of the arbitration unit, to the arbitration unit; a command generation unit suitable for generating a plurality of commands corresponding to and in response to the plurality of requests outputted according to the scheduling result of the arbitration unit; and a semiconductor memory device suitable for performing an internal operation in response to the command, wherein the arbitration unit r

Abstract: An all digital phase locked loop (ADPLL) includes an integer part phase processing circuit that outputs an integer part frequency signal using a first value and a second value. The first value is obtained by counting edges of one of a plurality of output clock signals. The second value indicates current edge position information on an edge position of an external reference clock signal with respect to the plurality of output clock signals. The ADPLL further includes a fraction part phase processing circuit that selects two adjacent output clock signals of the plurality of output clock signals according to a prediction selection signal and that generates a fraction part frequency signal using the fraction part phase signal, the prediction selection signal being generated according to a fraction part phase signal indicating fraction part phase information and a signal indicating the current edge position information.

Abstract: An image processing apparatus and method are provided. The apparatus includes an image obtainer configured to obtain a captured image; a quick view image generator configured to generate a quick view image showing a region of the captured image based on a user profile determined according to a type of the captured image; and a display unit configured to display the generated quick view image according to a preset method.

Abstract: A data transmission and reception system may include: a data transmission apparatus configured to generate N Tx signals having discrete levels using N binary data, and output the N Tx signals to N single-ended signal lines, respectively, where N is a natural number equal to or larger than 2; and a data reception apparatus configured to receive the N Tx signals transmitted in parallel through the single-ended signal lines, and restore the N binary data by comparing the received N Tx signals to each other.

Abstract: Methods and apparatuses for sensing nucleotides are disclosed. A related nucleotide sensing device may include an insulator having an electrode well and a separation layer attached to the insulator, the separation layer including a film and a shell layer. The film may have a hole, the hole having a first diameter. The shell layer may be disposed on a surface of the film, and at least a portion of the shell layer may be disposed within the hole. The separation layer may be formed of inorganic material and may comprise a nanopore. The nanopore may permit fluid communication with the electrode well across the separation layer. The nanopore may be disposed within the hole and may have a second diameter smaller than the first diameter.

Abstract: a semiconductor system may include: a volatile memory device that stores an address mapping table including mapping information for a non-volatile memory device; and a control device suitable for reading one or more seed values from the volatile memory device before the address mapping table is stored, generating a plurality of random values based on the seed values, and initializing mapping information to the plurality of random values.

Abstract: The present invention relates to a porous silicon-silicon oxide-carbon composite comprising a silicon oxide-carbon structure and silicon particles, wherein the silicon oxide-carbon structure comprises a plurality of micropores, and the silicon particles are uniformly distributed in the silicon oxide-carbon structure. The porous silicon-silicon oxide-carbon composite of the present invention shows decreased volume expansion due to the intercalation of lithium ions and improved electric conductivity, and has a porous structure. Accordingly, an electrolyte easily penetrates into the porous structure, and output properties may be improved. When the composite is included in a negative electrode active material, the performance of a lithium secondary battery may be further improved.