Abstract: A floating marine structure which includes a first float disposed at the center and a plurality of second floats disposed around the first float, where the first float has a floating body made of a floatable material in a polygonal prism shape, a damping unit coupled to the bottom of the floating body at the center, having the same cross-section as the floating body, having a cross-sectional area larger than the cross-sectional area of the floating body, and reducing a shake of the first float in the sea, and at least one coupling hole formed at each side of the floating body. The second float has the same shape as the floating body and has coupling protrusions formed at sides facing the sides of the floating body and inserted in the coupling holes, and wherein the coupling holes are formed at alternate sides of the floating body.

Abstract: A semiconductor device includes: a first memory chip including a plurality of first memory regions; a temporary memory chip including a plurality of temporary memory regions; and a control chip suitable for accessing a first access target memory region among the plurality of first memory regions or a first temporary memory region among the plurality of temporary memory regions based on first access information and first temperature readout information corresponding to the plurality of first memory regions.

Abstract: Provided is an edge-based load shedding system. The edge-based load shedding system includes an analysis server configured to determine to perform server or edge separation execution, transmit an operational module of an analysis application, issue a request to offload the transmitted operational module, and receive and analyze data obtained through preprocessing and an edge machine configured to receive and offload the operational module from the analysis server, preprocess raw data collected from a sensor by using the offloaded operational module, and transmit the data obtained through the preprocessing to the analysis server.

Abstract: A negative electrode active material particle and a method for preparing the same are provided. The negative electrode active material particle includes SiOx (0<x?2) and Li2Si2O5, and includes less than 2 wt % of Li2SiO3 and Li4SiO4.

Abstract: A method of enhancing a low-light image includes receiving a first image from an RWB image sensor, receiving a second image from an RGB image sensor, receiving an illumination value from an illumination sensor, and selecting at least one of the first and second images and generating a third image using the at least one selected image.

Abstract: A negative electrode active material for a secondary battery is provided. The negative electrode active material is composed of a composite including a metal element-doped inorganic particle or inorganic oxide particle, and a polymer coating layer coated on the metal element-doped inorganic particle or inorganic oxide particle, wherein the metal element is included in an amount of 0.01 to 20 parts by weight based on 100 parts by weight of the inorganic particle or inorganic oxide particle. Also provided are a method for preparing the negative electrode active material and a secondary battery having enhanced lifetime and high-efficiency charge/discharge properties by including the negative electrode active material.

Abstract: An electronic device and method are disclosed, including a first communication module configured to perform a cellular communication, a second communication module configured to perform a communication to connect the electronic device to an external electronic device, and at least one processor electrically connected to the first and second communication modules, executing the method, which includes activating the first communication module in response to detecting a preset condition, and transmitting a signal requesting call forwarding via the first communication module.

Abstract: A method of receiving content in a client is provided. The method may include receiving, from a server, a spatial set identifier (ID) corresponding to a tile group including at least one tile, sending, to the server, a request for first content corresponding to metadata, and receiving, from the server, the first content corresponding to the request.

Abstract: A memory system may include a memory module comprising a plurality of memory chips mounted therein each memory chip comprising a plurality of banks, the memory chips being simultaneously accessible based on the same command and address; and a memory controller suitable for mapping the banks of the memory chips to each other while rearranging an order of the banks of each of the memory chips based on repair information of the memory chips.

Abstract: The present invention relates to a silicon-based composite including a silicon oxide which is coated thereon with carbon and bonded therein to lithium. The present invention also relates to a method of producing a silicon-based composite, comprising coating a surface of silicon oxide with carbon, mixing the silicon oxide coated with carbon with lithium oxide, and heat-treating a mixture of the silicon oxide coated with carbon and the lithium oxide in an inert atmosphere.

Abstract: The present specification is related to a method for performing multi-projection and a multi-projection system for minimizing a black offset in a multi-projection environment. The present specification provides the method for performing multi-projection comprising estimating the intensity transfer function (ITF) of a plurality of projectors, calculating an optimal black offset threshold for each of the projectors by using each of the ITFs, and applying the optimal black offset threshold to an image projection by each of the projectors.

Abstract: The present invention relates to a system for transmitting and receiving audio, particularly, to a method and apparatus for transmitting and receiving of object-based audio contents, which packetizes audio objects having the same characteristic. To achieve the above, the present invention includes filtering a plurality of ESs according to common information, adding a packet header to the respective filtered ESs and generate ES packets, aggregating all the generated ES packets and then adding a multi-object packet header to the aggregated ES packets to generate an object packet, and multiplexing the generated object packet, packetizing the multiplexed object packet according to a transmitting media and transmitting the packetized object packet.

Abstract: A data transmission and reception system may include: a data transmission apparatus configured to generate N Tx signals having discrete levels using N binary data, and output the N Tx signals to N single-ended signal lines, respectively, where N is a natural number equal to or larger than 2; and a data reception apparatus configured to receive the N Tx signals transmitted in parallel through the single-ended signal lines, and restore the N binary data by comparing the received N Tx signals to each other.

Abstract: A semiconductor system may include: a command queue suitable for storing a plurality of requests provided from a host according to rank and bank information of the requests; one or more determination units suitable for determining requests having a same row address in response to row address information of the requests stored in the command queue; an arbitration unit suitable for scheduling the plurality of requests according to internal priorities of the requests; a monitoring unit suitable for providing the rank information and row hit information of the plurality of requests outputted according to the scheduling result of the arbitration unit, to the arbitration unit; a command generation unit suitable for generating a plurality of commands corresponding to and in response to the plurality of requests outputted according to the scheduling result of the arbitration unit; and a semiconductor memory device suitable for performing an internal operation in response to the command, wherein the arbitration unit r

Abstract: Provided is a transparent fingerprint recognizing sensor array, including: a pixel driving circuit formed on a substrate; an antistatic wiring disposed in an upper part of the pixel driving circuit; and a pixel electrode connected to the pixel driving circuit, wherein the pixel electrode is made of a transparent material or has an open formed in a center part thereof.

Abstract: The present invention relates to a method of preparing silicon oxide, in which the amounts of silicon and oxygen are appropriately controlled by decreasing the amount of the oxygen from silicon oxide containing a relatively large amount of oxygen, silicon oxide prepared by the method, and a secondary battery including the same. According to the method of preparing silicon oxide, silicon oxide (first silicon oxide) including a relatively large amount of oxygen is heat treated in a reducing atmosphere to decrease the amount of the oxygen in the silicon oxide (first silicon oxide) and to prepare silicon oxide (second silicon oxide) including silicon and oxygen in an appropriate amount (Si:SiO2=1:0.7-0.98), thereby improving capacity and initial efficiency and securing stability and cycle properties (lifetime characteristics) of the secondary battery.

Abstract: Provided are an electrode active material having a plurality of pores and a secondary battery including the same, and more particularly, a porous electrode active material including silicon-based oxide expressed by SiOx (0.5?x?1.2) and having a Brunauer, Emmett, and Teller (BET) specific surface area ranging from 2 m2/g to 100 m2/g, and a secondary battery including a cathode including a cathode active material, a separator, an anode including an anode active material, and an electrolyte, in which the anode active material includes a porous electrode active material including silicon-based oxide expressed by SiOx (0.5?x?1.2) and having a BET specific surface area ranging from 2 m2/g to 100 m2/g.

Abstract: A semiconductor memory device includes a semiconductor circuit substrate having a chip pad forming region. A pair of data lines are formed on the semiconductor circuit substrate at one side of the chip pad region. The pair of data lines extend along a direction that the chip pad region of the semiconductor circuit substrate extends. The pair of data lines are arranged to be adjacent to each other and receive a pair of differential data signals. A power supply line is formed on the semiconductor circuit substrate at the other side of the chip pad region. The power supply line extends along the direction that the chip pad region of the semiconductor circuit substrate extends, and the power supply line receives power.

Abstract: Provided are a composite for an anode active material and a method of preparing the same. More particularly, the present invention provides a composite for an anode active material including a (semi) metal oxide and an amorphous carbon layer on a surface of the (semi) metal oxide, wherein the amorphous carbon layer comprises a conductive agent, and a method of preparing the composite.

Abstract: Rate adaptation is carried out using bit error rate (BER) to enable effective multimedia transmission. The BER can be estimated using signal strength in a MAC layer and modulation information (FIGS. 7-9), and can be compatibly used in different wireless networks by means of message standardization.