Abstract: A wet etching apparatus includes a process bath having an internal space configured to receive an etchant and having a support unit, on which a wafer is disposed to be in contact with the etchant. A laser unit is disposed above the process bath and is configured to direct a laser beam to the wafer and to heat the wafer thereby. An etchant supply unit is configured to supply the etchant to the internal space of the process bath.

Abstract: A wafer cleaning apparatus is provided. The wafer cleaning apparatus includes comprising a chamber configured to be loaded with a wafer, a nozzle on the wafer and configured to provide liquid chemicals on an upper surface of the wafer, a housing under the wafer, a laser module configured to irradiate laser on the wafer, a transparent window disposed between the wafer and the laser module, and a controller configured to control on/off of the laser module, wherein the controller is configured to control repetition of turning the laser module on and off, and retain temperature of the wafer within a temperature range, and a ratio of time when the laser module is on in one cycle including on/off of the laser module is 30% to 50%.

Abstract: In a method of synthesizing 3,6?-dithiopomalidomide from pomalidomide according to an embodiment, pomalidomide is dissolved by adding a solvent thereto, phosphorus pentasulfide (P2S5) is added to the dissolved pomalidomide, followed by stirring, and solids are removed from the stirred solution, followed by purification. It is possible to reduce the production of 1,6-dithiopomalidomide, which is a by-product produced during the synthesis of 3,6?-dithiopomalidomide, and selectively increase the proportion of 3,6-dithiopomalidomide among synthesized isomeric compounds to 90% or more, thereby reducing the time and cost required to separate 1,6-dithiopomalidomide by HPLC, etc. in a subsequent purification process, thereby increasing the production and economic feasibility of the 3,6?-dithiopomalidomide compound.

Abstract: A multi-chamber apparatus for processing a wafer, the apparatus including a high etch rate chamber to receive the wafer and to etch silicon nitride with a phosphoric acid solution; a rinse chamber to receive the wafer and to clean the wafer with an ammonia mixed solution; and a supercritical drying chamber to dry the wafer with a supercritical fluid.

Abstract: A dry cleaning apparatus includes a chamber, a substrate support supporting a substrate within the chamber, a shower head arranged in an upper portion of the chamber to supply a dry cleaning gas toward the substrate, the shower head including an optical window transmitting a laser light therethrough toward the substrate support, a plasma generator generating plasma from the dry cleaning gas, and a laser irradiator irradiating the laser light on the substrate through the optical window and the plasma to heat the substrate.

Abstract: An apparatus is provided. The apparatus includes a spinner configured to hold a wafer, a nozzle configured to supply a liquid chemical onto an upper surface of the wafer, and a laser module configured to heat the wafer by radiating a laser beam to a lower surface of the wafer while the nozzle supplies the liquid chemical onto the upper surface of the wafer.

Abstract: A wafer cleaning apparatus is provided. The wafer cleaning apparatus includes comprising a chamber configured to be loaded with a wafer, a nozzle on the wafer and configured to provide liquid chemicals on an upper surface of the wafer, a housing under the wafer, a laser module configured to irradiate laser on the wafer, a transparent window disposed between the wafer and the laser module, and a controller configured to control on/off of the laser module, wherein the controller is configured to control repetition of turning the laser module on and off, and retain temperature of the wafer within a temperature range, and a ratio of time when the laser module is on in one cycle including on/off of the laser module is 30% to 50%.

Abstract: A multi-chamber apparatus for processing a wafer, the apparatus including a high etch rate chamber to receive the wafer and to etch silicon nitride with a phosphoric acid solution; a rinse chamber to receive the wafer and to clean the wafer with an ammonia mixed solution; and a supercritical drying chamber to dry the wafer with a supercritical fluid.

Abstract: A wafer cleaning apparatus is provided. The wafer cleaning apparatus includes comprising a chamber configured to be loaded with a wafer, a nozzle on the wafer and configured to provide liquid chemicals on an upper surface of the wafer, a housing under the wafer, a laser module configured to irradiate laser on the wafer, a transparent window disposed between the wafer and the laser module, and a controller configured to control on/off of the laser module, wherein the controller is configured to control repetition of turning the laser module on and off, and retain temperature of the wafer within a temperature range, and a ratio of time when the laser module is on in one cycle including on/off of the laser module is 30% to 50%.

Abstract: An apparatus is provided. The apparatus includes a spinner configured to hold a wafer, a nozzle configured to supply a liquid chemical onto an upper surface of the wafer, and a laser module configured to heat the wafer by radiating a laser beam to a lower surface of the wafer while the nozzle supplies the liquid chemical onto the upper surface of the wafer.

Abstract: A wafer cleaning equipment includes a housing to be positioned adjacent to a wafer, a hollow region in the housing, a laser module that outputs a laser beam having a profile of the laser beam includes a first region having a first intensity and a second region having a second intensity greater than the first intensity, the laser beam being output into the hollow region, and a transparent window that covers an upper part of the hollow region and transmits the laser beam to be incident on an entirety of a lower surface of the wafer.

Abstract: A method of predicting membrane fouling in a reverse osmosis process includes collecting information relative to the reverse osmosis process being performed over a predetermined period of time, the collected information including a process factor and a water quality factor, the process factor including a produced water flow rate; calculating a salt removal rate and a pressure drop based on the collected information; normalizing the produced water flow rate, the salt removal rate, and the pressure drop; generating a prediction equation using normalized values of the produced water flow rate, the salt removal rate, and the pressure drop values; and predicting membrane fouling through the generated prediction equation to determine a chemical cleaning time. Process and water quality factors are normalized to temperature and/or flow rate, and the prediction equation uses the normalized factors. Both short-term and long-term predictions are made for chemical cleaning time and membrane module replacement time.

Abstract: A wet etching apparatus includes a process bath having an internal space configured to receive an etchant and having a support unit, on which a wafer is disposed to be in contact with the etchant. A laser unit is disposed above the process bath and is configured to direct a laser beam to the wafer and to heat the wafer thereby. An etchant supply unit is configured to supply the etchant to the internal space of the process bath.

Abstract: Provided is a tool adapter mounted on a handle of a tool to be gripped by a robot hand, the tool adapter including: a fixing part including an opening in which the handle of the tool is inserted to be fixed to the fixing part; a grip part including contact surfaces which are installed on left and right sides of the fixing part to be gripped by the robot hand, and configured such that as at least one of the contact surfaces moves in accordance with a gripping force from the robot hand, a distance between the contact surfaces changes; and a power transmission structure connected to the grip part and configured to convert a movement of the at least one of the contact surfaces into a movement of pressing a switch installed at the handle of the tool.

Abstract: A method for removing iodine by using Deinococcus radiodurans having a gold nanoparticle synthesis ability is disclosed. More particularly, a method for removing radioactive iodine by adsorbing radioactive iodine onto gold nanoparticles synthesized in cells of Deinococcus radiodurans is disclosed. A recombinant microorganism having an enhanced radioactive iodine removal ability according to the present invention may selectively remove radioactive iodine present in various types of solutions at a high efficiency of 99% or higher, and thus may be very effective in removing radioactive iodine generated in large-scale hospitals, industries, nuclear facility accidents, and the like.

Abstract: A dry cleaning apparatus includes a chamber, a substrate support supporting a substrate within the chamber, a shower head arranged in an upper portion of the chamber to supply a dry cleaning gas toward the substrate, the shower head including an optical window transmitting a laser light therethrough toward the substrate support, a plasma generator generating plasma from the dry cleaning gas, and a laser irradiator irradiating the laser light on the substrate through the optical window and the plasma to heat the substrate.

Abstract: The present invention relates to a method for preparing a mutant strain having high producibility of phytoene and a mutant strain prepared thereby. More particularly, a Deinococcus radiodurans mutant strain, prepared by the method of the present invention, having high producibility of phytoene, does not retain an artificial antibiotic-resistant gene, although constructed by introducing a metabolism engineering method, and has high producibility of phytoene. Thus, the mutant strain prepared according to the method can find useful applications in the mass production of phytoene.

Abstract: A dry cleaning apparatus includes a chamber, a substrate support supporting a substrate within the chamber, a shower head arranged in an upper portion of the chamber to supply a dry cleaning gas toward the substrate, the shower head including an optical window transmitting a laser light therethrough toward the substrate support, a plasma generator generating plasma from the dry cleaning gas, and a laser irradiator irradiating the laser light on the substrate through the optical window and the plasma to heat the substrate.

Abstract: Provided is a tool adapter mounted on a handle of a tool to be gripped by a robot hand, the tool adapter including: a fixing part including an opening in which the handle of the tool is inserted to be fixed to the fixing part; a grip part including contact surfaces which are installed on left and right sides of the fixing part to be gripped by the robot hand, and configured such that as at least one of the contact surfaces moves in accordance with a gripping force from the robot hand, a distance between the contact surfaces changes; and a power transmission structure connected to the grip part and configured to convert a movement of the at least one of the contact surfaces into a movement of pressing a switch installed at the handle of the tool.

Abstract: Provided is a method of diagnosing cervical cancer using an artificial intelligence-based medical image analysis, which is performed by a computer, the method including obtaining an image of cervical cells of an object; pre-processing the image; identifying one or more cells in the pre-processed image; determining whether the identified one or more cells are normal; and diagnosing whether the object has cervical cancer on the basis of a result of determining whether the identified one or more cells are normal.