Abstract: A memory controller includes a request queue that stores requests provided from an external device, a scheduler that calculates a score for each request included in the request queue and determines a processing order of the requests based on the scores for the requests, and a weight generation circuit that generates a weight vector including weights used to calculated the scores.

Abstract: A memory controller includes a scheduler that decides a processing order of a plurality of requests provided from an external device with reference to a timing parameter value for each of the requests; and a timing control circuit that adjusts the timing parameter value according to a corresponding address to access a memory device, the corresponding address being used to process a corresponding request of the plurality of requests.

Abstract: A semiconductor apparatus includes a first memory die; a second memory die; and a processor configured to provide an external command, an external start address and an external end address which are associated with a read operation, to the first memory die, and provide an external command, an external start address and an external end address, which are associated with a write operation, to the second memory die, in the case where data stored in the first memory die is to be transferred to and stored in the second memory die.

Abstract: A semiconductor device includes a controller configured to receive a request for a first memory device, determine whether or not a multi-bit error has occurred at a requested address of the first memory device, and process the request on a second memory device instead of the first memory device, when the multi-bit error has occurred.

Abstract: A semiconductor device comprises: a read queue configured to store one or more read requests to a semiconductor memory device; a write queue configured to store one or more write requests to the semiconductor memory device; and a dispatch block configured to determine a scheduling order of the one or more read requests and the one or more write requests and switch to the read queue or to the write queue if a request exists in a Row Hit state in the read queue or in the write queue.

Abstract: A semiconductor device may include a first memory cell array configured to store data according to a first address on a first basis, a second memory cell array configured to store data according to a second address on a second basis that is relatively smaller than the first basis, a memory selector configured to select one of the first memory cell array and the second memory cell array to store data during a write request, and an address map table configured to store mapping information between the first and second addresses for data stored in the second memory cell array.

Abstract: A memory system includes a memory unit and a memory controller. The memory unit includes a plurality of memory banks, wherein an information stored in a memory bank is accessed via a word line and a bit line. The memory controller is configured to limit repetitive accessing of a same word line or a same bit line so that the number of consecutive access is less than a predetermined critical value.

Abstract: A semiconductor device includes a controller configured to control a first memory device to process a request for the first memory device. The controller receives the request for the first memory device, determines a data damage risk of cells connected to one or more second signal lines adjacent to a first signal line of the first memory device corresponding to a requested address by referring to information indicating a data damage risk, and restore data in one or more cells of the cells connected to the second signal line when determining that there is the data damage risk.

Abstract: A semiconductor device includes a first stage register for storing events occurring for a first period, a second stage register for storing events occurring for a second period shorter than the first period and a controller for controlling the second stage register to select events from the second stage register each having a reference value larger than a second threshold value to the first stage register and for controlling the first stage register to store events which are selected from the second stage register.

Abstract: A semiconductor device includes a controller configured to control a first memory device to process a request for the first memory device and a second memory device. The controller receives the request for the first memory device, determines a data damage risk of cells connected to a second signal line adjacent to a first signal line of the first memory device corresponding to a requested address by referring to information indicating a data damage risk, and stores data of the cells connected to the second signal line in the second memory device when determining that there is a data damage risk.

Abstract: A memory system includes a memory device and a memory controller. The memory device includes a plurality of memory dies having different page sizes. The memory controller generates a plurality of chip selection signals for activating the plurality of memory dies based on the reordering number of requests received from a processor.

Abstract: A data storage device may include: a data storage unit comprising a plurality of channels each having a plurality of nonvolatile memory devices; and a control unit configured to control a garbage collection operation of selecting a first block included in a first channel as a victim block and copying first data included in the first block into a second block included in a second channel that is selected.

Abstract: A semiconductor device remaps the relationship between logical addresses and physical addresses of a semiconductor memory device at each first interval. The semiconductor device may include a wear leveling controller configured to select a first physical address of the semiconductor memory device to remap a logical address corresponding to the first physical address of the semiconductor memory device to a second physical address of the semiconductor memory device, and to adjust the first interval.

Abstract: A semiconductor device includes a memory region configured to include a plurality of banks and a redundancy region within each of the banks and an error check and correction (ECC) region configured to detect an address of the memory region at which an error has occurred and correct a defect of the memory region by replacing the address at which the error has occurred with a redundancy line of the redundancy region based on address information.

Abstract: A semiconductor memory apparatus includes a test circuit configured to receive a plurality of sequentially-changing test input patterns, compress the received test input patterns at each clock signal, and output the compressed patterns as variable test data.

Abstract: A cache device may include a first cache including a first set and a plurality of ways corresponding to the first set, and a second cache including a second set and a plurality of ways corresponding to the second set. The second set is related with the first set depending on a vacancy of the ways of the first set.

Abstract: This technology relates to smoothly performing a test on a memory circuit having a high memory capacity while reducing the size of a test circuit. A test circuit according to the present invention includes a test execution unit configured to perform a test on a target test memory circuit, an internal storage unit configured to store data for the test execution unit, and a conversion setting unit configured to set a part of or the entire storage space of the target test memory circuit as an external storage unit for storing the data for the test execution unit.

Abstract: A semiconductor device may include: a storage unit configured to store program codes provided through control of a processor core; and a control unit configured to perform a control operation on a semiconductor memory device according to the program codes.

Abstract: A system in package (SIP) semiconductor system includes a memory device, a controller, a first input/output terminal, a test control unit, and a second input/output terminal. The controller communicates with the memory device. The first input/output terminal performs communication between the controller and a device external to the SIP semiconductor system. The test control unit controls a predetermined test mode of the memory device. The second input/output terminal performs communication between the test control unit and at least the device external to the SIP semiconductor system.

Abstract: A memory system includes a processor, one or more volatile memory dies stacked with the processor and one or more nonvolatile memory dies stacked with the processor and the volatile memory dies. The processor transfers data stored in the volatile memory die to the nonvolatile memory die in response to a backup signal, and transfers the data stored in the nonvolatile memory die to the volatile memory die in response to a recovery signal.