Abstract: A wafer processing apparatus may include a reaction tube extending in a vertical direction and defining a process chamber for receiving a boat that holds a plurality of wafers. A gas injector may be configured to supply a reaction gas into the process chamber and may include a gas distributor extending in the vertical direction in the reaction tube. The gas injector may have a plurality of ejection holes for spraying the reaction gas. An inner diameter of the gas distributor may be at least 10 mm, and a sectional area ratio of the total sectional area of the ejection holes to a sectional area of the gas distributor is about 0.3 or less.

Abstract: A detergent feeding apparatus that automatically supplies a detergent to a washing machine. The washing machine including a cabinet, a tub to accommodate water at an inside therein, and a detergent feeding apparatus to supply at least one detergent along with wash water to the tub. Wherein the detergent feeding apparatus includes a detergent container housing installed at an inside the cabinet, a detachable detergent container, and at least one valve apparatus configured in a way that the detergent accommodated at the detergent container is automatically put into the detergent container housing, wherein the at least one valve apparatus includes a detergent accommodating room to accommodate detergent at an inside therein, an inlet valve to allow the detergent in the detergent container to introduced to the detergent accommodating room, and an outlet valve to allow the detergent in the detergent accommodating room to be discharged to the detergent container housing.

Abstract: Disclosed herein is a washing machine capable of improving an external shape by locating a detergent supply apparatus on a bottom inside a body. The washing machine includes a body with an opening portion formed in a front surface thereof, a door provided to open and close the opening portion of the body, a door guide provided on the opening portion, and a detergent supply apparatus which includes a detergent box provided on a bottom of the door guide to be withdrawable toward a center of the opening portion and a detergent supply pump provided to discharge a detergent in the detergent box.

Abstract: A washing machine includes a wash tub in which wash water is stored, a detergent supply device to supply detergent into the wash tub, and a water supply hose to supply the wash water from an external water supply source to the detergent supply device and subsequently into the wash tub. Movement of the wash water through the water supply hose is carried out by a hydraulic pressure of an external water supply source in an entire region of the water supply hose.

Abstract: Disclosed herein is a washing machine in which a balancer is directly mounted on a body of an inner tub without a front surface part of the inner tub. The washing machine includes an outer tub to store water, a body formed in a cylindrical shape provided with an opening at one surface thereof and provided in the outer tub, and a balancer connected to an inner diameter part at the opening of the body to reduce unbalance of the body generated during rotation of the body and to reinforce the body.

Abstract: Disclosed herein is a washing machine including a pair of tubs disposed in a main body and a detergent supply device to supply any one of the pair of tubs. A first detergent storage part, into which a first detergent is put, and a second detergent storage part, into which a second detergent is put, disposed above the first detergent storage part are provided in the detergent supply device, thereby reducing a width of the detergent supply device.

Abstract: Disclosed herein is a washing machine including a body, a tub disposed within the body to retain water, a spin basket rotatably installed in the tub, a detergent feeding device to supply detergent and water to the tub. The detergent feeding device includes a detergent housing installed in the body, a detergent case installed in the detergent housing to store liquid detergent, and a detergent introduction module to introduce the liquid detergent stored in the detergent case into the detergent housing. As the detergent introduction module is installed on the outer surface of the detergent case, placement of electrical components inside the detergent case is avoided.

Abstract: A drain pump including a case including a mounting bracket; a first connection member mounted to the mounting bracket to be spaced from the cabinet; a second connection member inserted in the first connection member; and a fastening member passed through the cabinet and inserted in the second connection member so that the case is mounted to the cabinet. Since the first connection member is spaced from the cabinet, the second connection member can be prevented from being damaged by vibration of the drain pump.

Abstract: A washing machine including a housing and a detergent supply device to supply detergents. The detergent supply device includes a rotary case installed to be rotatable about the lower end thereof and rotated to be protruded from the housing, and detergent containers detachably installed in the rotary case. The rotary case is rotated so that the upper portions of the detergent containers are protruded forwardly, and thus the detergents are easily injected into the respective detergent containers.

Abstract: A washing machine includes a wash tub in which wash water is stored, and a water supply hose to supply the wash water into the wash tub. Movement of the wash water through the water supply hose is carried out by a hydraulic pressure of an external water supply source in an entire region of the water supply hose.

Abstract: Methods of forming a gate structure for an integrated circuit memory device include forming a first dielectric layer having a dielectric constant of under 7 on an integrated circuit substrate. Ions of a selected element from group 4 of the periodic table and having a thermal diffusivity of less than about 0.5 centimeters per second (cm2/s) are injected into the first dielectric layer to form a charge storing region in the first dielectric layer with a tunnel dielectric layer under the charge storing region. A metal oxide second dielectric layer is formed on the first dielectric layer, the second dielectric layer. The substrate including the first and second dielectric layers is thermally treated to form a plurality of discrete charge storing nano crystals in the charge storing region and a gate electrode layer is formed on the second dielectric layer. Gate structures for integrated circuit devices and memory cells are also provided.

Abstract: Disclosed herein is a washing machine in which a balancer is directly mounted on a body of an inner tub without a front surface part of the inner tub. The washing machine includes an outer tub to store water, a body formed in a cylindrical shape provided with an opening at one surface thereof and provided in the outer tub, and a balancer connected to an inner diameter part at the opening of the body to reduce unbalance of the body generated during rotation of the body and to reinforce the body.

Abstract: Disclosed herein is a washing machine including a pair of tubs disposed in a main body and a detergent supply device to supply any one of the pair of tubs. A first detergent storage part, into which a first detergent is put, and a second detergent storage part, into which a second detergent is put, disposed above the first detergent storage part are provided in the detergent supply device, thereby reducing a width of the detergent supply device.

Abstract: Disclosed herein are a washing machine which minimizes the number of dampers and effectively prevents vibration, and an outer tub supporting structure thereof. The washing machine includes a housing forming an external appearance of the washing machine, an outer tub provided in the housing to store water, an inner tub rotatably mounted within the outer tub, a driving device including a rotary shaft passing through the outer tub and connected to the inner tub to rotate the inner tub, a bearing surrounding the rotary shaft and fixed to the outer tub to prevent rotation of the outer tub during rotation of the rotary shaft, a bearing housing formed on the outer tub such that the bearing is mounted within the bearing housing, and a damping unit provided with a first end supporting the bearing housing and a second end fixed to the washing machine housing to reduce vibration of the outer tub.

Abstract: Disclosed herein is a washing machine having an upper washing unit and a lower washing unit. The upper washing unit is connected to the lower washing unit through connection parts protruded upwardly from the upper end of the lower washing unit.

Abstract: A drain pump including a case including a mounting bracket; a first connection member mounted to the mounting bracket to be spaced from the cabinet; a second connection member inserted in the first connection member; and a fastening member passed through the cabinet and inserted in the second connection member so that the case is mounted to the cabinet. Since the first connection member is spaced from the cabinet, the second connection member can be prevented from being damaged by vibration of the drain pump.

Abstract: Methods of forming a gate structure for an integrated circuit memory device include forming a first dielectric layer having a dielectric constant of under 7 on an integrated circuit substrate. Ions of a selected element from group 4 of the periodic table and having a thermal diffusivity of less than about 0.5 centimeters per second (cm2/s) are injected into the first dielectric layer to form a charge storing region in the first dielectric layer with a tunnel dielectric layer under the charge storing region. A metal oxide second dielectric layer is formed on the first dielectric layer, the second dielectric layer. The substrate including the first and second dielectric layers is thermally treated to form a plurality of discrete charge storing nano crystals in the charge storing region and a gate electrode layer is formed on the second dielectric layer. Gate structures for integrated circuit devices and memory cells are also provided.

Abstract: Methods of forming a gate structure for an integrated circuit memory device include forming a first dielectric layer having a dielectric constant of under 7 on an integrated circuit substrate. Ions of a selected element from group 4 of the periodic table and having a thermal diffusivity of less than about 0.5 centimeters per second (cm2/s) are injected into the first dielectric layer to form a charge storing region in the first dielectric layer with a tunnel dielectric layer under the charge storing region. A metal oxide second dielectric layer is formed on the first dielectric layer, the second dielectric layer. The substrate including the first and second dielectric layers is thermally treated to form a plurality of discrete charge storing nano crystals in the charge storing region and a gate electrode layer is formed on the second dielectric layer. Gate structures for integrated circuit devices and memory cells are also provided.

Abstract: Methods of forming a gate structure for an integrated circuit memory device include forming a metal oxide dielectric layer on an integrated circuit substrate. Ions of a selected element from group 4 of the periodic table and having a thermal diffusivity of less than about 0.5 centimeters per second (cm2/s) are injected into the dielectric layer to form a charge storing region in the dielectric layer with a tunnel dielectric layer under the charge storing region and a capping dielectric layer above the charge storing region. The substrate including the metal oxide dielectric layer is thermally treated to form a plurality of discrete charge storing nano crystals in the charge storing region. A gate electrode layer is formed on the dielectric layer.

Abstract: Methods of forming a gate structure for an integrated circuit memory device include forming a first dielectric layer having a dielectric constant of under 7 on an integrated circuit substrate. Ions of a selected element from group 4 of the periodic table and having a thermal diffusivity of less than about 0.5 centimeters per second (cm2/s) are injected into the first dielectric layer to form a charge storing region in the first dielectric layer with a tunnel dielectric layer under the charge storing region. A metal oxide second dielectric layer is formed on the first dielectric layer, the second dielectric layer. The substrate including the first and second dielectric layers is thermally treated to form a plurality of discrete charge storing nano crystals in the charge storing region and a gate electrode layer is formed on the second dielectric layer. Gate structures for integrated circuit devices and memory cells are also provided.