Abstract: A fixing unit, an image forming apparatus including the same, and a method of controlling the fixing unit are provided. The fixing unit includes a heating element to apply heat to a printing medium to fix a transferred image thereon, a temperature sensor to sense temperature of the heating element, and a storage medium to store characteristic data of the heating element. The image forming apparatus includes the fixing unit and a controller to read the characteristic data of the heating element and to determine a control mode of the fixing unit based on the characteristic data of the heating element. The method of controlling the fixing unit includes accessing the fixing unit and reading the characteristic data of the heating element from the storage medium, and setting a control mode of the fixing unit based on the characteristic data of the heating element.

Abstract: An ion source for ionizing a source gas includes an arc chamber housing defining an arc chamber to receive the source gas. The arc chamber has a first region and a second region. An electron emitting device is disposed in the arc chamber adjacent the first region and is adapted to emit electrons into the first and the second regions to ionize the source gas. An electron returning device is disposed in the arc chamber adjacent the second region and is adapted to return at least some of the electrons emitted from the electron emitting device into the second region. A gas supply system is adapted to direct the source gas into the first region and into the second region. According to some embodiments, the gas supply system is adapted to provide a greater mass flow rate of the source gas into the first and second regions than is provided into other regions of the arc chamber.

Abstract: An image size compensating system of a multifunction printer includes a scanning unit to generate scan data obtained by scanning a reference document and a copy of the reference document, a system control unit to extract scan information on widths and lengths of the reference document and the copy from the scan data, and a printer engine to receive the scan information from the system control unit and to control a main motor controlling a length of a print image and a polygon motor controlling a width of the print image so that sizes of the reference document and the copy are identical to each other.

Abstract: A method for controlling a laser beam power balance in a laser scanning unit is disclosed. The method of present invention comprises the steps of obtaining a first voltage value and a second voltage value corresponding to detection time points of a first laser beam and a second laser beam, respectively, emitted from the laser scanning unit. The first voltage value and the second voltage value are recorded in the laser scanning unit. After the laser scanning unit is mounted on a image forming apparatus, a third voltage value and a fourth voltage value are obtained corresponding to the detection time points of the first laser beam and the second laser beam, respectively, emitted from the laser scanning unit by driving the laser scanning unit mounted on the image forming apparatus. The third voltage value and the fourth voltage value are compared with the first voltage value and the second voltage value, respectively, thereby correcting the control voltage controlling the laser scanning unit by that variation.

Abstract: A golf ball marker with a leveling function comprising a leveler a predetermined position of a marker body for two simultaneous functions of marking the current position of a golf ball in the putting area and measuring the horizontal state of the green.

Abstract: A wiring structure of a semiconductor device includes a substrate; a first conductive layer formed in the substrate; an insulation film formed on the substrate including the first conductive layer and having a contact hole therein through which the upper surface of the first conductive layer is exposed, wherein the contact hole includes an upper contact hole and a lower contact hole having a shape undercut into the insulation film and thus being wider than the upper contact hole; and a second conductive layer formed on the insulation film so as to thoroughly fill the contact hole and electrically connected to the first conductive layer.

Abstract: An improved sensing device and method for leveling a semiconductor wafer in a chemical mechanical polishing apparatus, which easily detects the change of pressure from a semiconductor wafer contacting with the polishing surface. The present invention includes a polishing platen having a polishing pad on the upper leveled surface thereof, and fixed to a rotatable platen driving shaft. A carrier is rotatably provided on the upper surface of the polishing platen and holding the semiconductor wafer such that the lower surface of the semiconductor wafer is uniformly contacted with the polishing pad. A pressure detecting sensor senses the pressure applied from the semiconductor wafer on the polishing pad and outputs a corresponding signal.

Abstract: A wiring structure of a semiconductor device includes a substrate; a first conductive layer formed in the substrate; an insulation film formed on the substrate including the first conductive layer and having a contact hole therein through which the upper surface of the first conductive layer is exposed, wherein the contact hole includes an upper contact hole and a lower contact hole having a shape undercut into the insulation film and thus being wider than the upper contact hole; and a second conductive layer formed on the insulation film so as to thoroughly fill the contact hole and electrically connected to the first conductive layer.

Abstract: A method of forming a metal line structure for use with a semiconductor device includes the steps of: preparing a semiconductor substrate; forming a first line on the semiconductor substrate; forming a plug pattern on the first line; forming at least one insulating layer on an exposed surface of the first line and on the plug pattern; planarizing the insulating layer and, simultaneously, removing the plug pattern to form a contact hole which exposes at least a portion of the first line; and forming a second line in the contact hole such that the second line is configured to couple with the first line.

Abstract: A method of forming an interconnection for a semiconductor device includes the steps of: forming a lower conductive line on a semiconductor substrate and forming a first insulating layer on the semiconductor substrate and the lower conductive line; patterning the first insulating layer to form a first insulating layer pattern which is narrower than the lower conductive line on the lower conductive line; forming a second insulating layer on an overall surface of the substrate and on the first insulating layer pattern, to planarize a surface of the second insulating layer; patterning the second insulating layer to expose a surface of the first insulating layer pattern and to form a first trench wider than the first insulating layer pattern on an upper portion of the first insulating pattern; removing the first insulating layer pattern, to thereby form a second trench at a lower portion of the first trench; and filling the first and second trenches with conductive material, to thereby form an upper conductive li

Abstract: A method for fabricating wiring in a semiconductor device in which a conductor line and a contact hole are formed by self-alignment, includes the steps of: forming an insulating layer on a substrate; forming an etch-step layer on the insulating layer; etching the etch-stop layer of a wiring region connected to a window and the insulating layer to a predetermined thickness; forming a mask layer on the etch-stop layer and the insulating layer; etching the mask layer to remove the mask layer at the central part of the window; and etching the insulating layer of the central part of the window so as to form a contact hole. By applying such a method, a highly improved reliability can be obtained, and a process thereof is simplified by a single photolithography. Also, the contact hole is formed by self-alignment in the lengthwise direction and in the vertical direction of the conductor line.

Abstract: A chemical mechanical polishing apparatus for a semiconductor wafer which is capable of polishing uniformly the surface of the semiconductor wafer and of controlling the polishing amount by providing plurality of rotary drums each wrapped in a polishing cloth on the upper surface of a polishing pad and connecting supporters capable of vertical movement to both ends each rotary drum, and includes a rotatable polishing pad in the planar upper surface of which a plurality of recesses are formed for receiving a semiconductor wafer, a plurality of rotatable polishing units located on the polishing pad for planarizing the surface of the semiconductor wafers, a supporter connected at the endpoints of the rotational polishing units which can make a vertical movement, and a slurry applicator located above the rotational polishing units for putting a slurry thereon.