Patents by Inventor Yong-Kyu Lee

Yong-Kyu Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20040197995
    Abstract: A method of manufacturing a twin-ONO-type SONOS memory using a reverse self-alignment process, wherein an ONO dielectric layer is formed under a gate and physically separated into two portions using a reverse self-alignment process irrespective of photolithographic limits. To facilitate the reverse self-alignment, a buffer layer and spacers for defining the width of the ONO dielectric layer are adopted. Thus, the dispersion of trapped charges during programming and erasing can be appropriately adjusted, thus improving the characteristics of the SONOS. The present invention prevents the redistribution of charges in time after the programming and erasing operations.
    Type: Application
    Filed: February 20, 2004
    Publication date: October 7, 2004
    Inventors: Yong-kyu Lee, Jeong-uk Han, Sung-taeg Kang, Jong-duk Lee, Byung-gook Park
  • Patent number: 6784476
    Abstract: In a non-volatile semiconductor memory device and a fabrication method thereof, a charge storage layer is formed on a substrate. A control gate layer is formed on the charge storage layer. A gate mask having a spacer-shape is formed on the control gate layer. The charge storage layer and the control gate layer are removed using the gate mask as protection to form a control gate and a charge storage region.
    Type: Grant
    Filed: January 3, 2002
    Date of Patent: August 31, 2004
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dong-Jun Kim, Jin-Ho Kim, Yong-Kyu Lee, Min-Soo Cho, Eui-Youl Ryu
  • Publication number: 20040152663
    Abstract: Formulations for enhanced mucosal absorption of heparin are disclosed. In one preferred embodiment, an amphiphilic heparin derivative composed of heparin covalently bonded to a hydrophobic agent is dissolved in a water phase, the water phase is then dispersed in an organic phase such that an emulsion is formed, and then the emulsion is dried to obtain a powdered composition. In another embodiment, the amphiphilic heparin derivative is dissolved in water or a water/organic co-solvent, the water or co-solvent is then dispersed in an oil phase, and then the water or co-solvent is evaporated, resulting in the amphiphilic heparin derivative dispersed in the oil phase. In another embodiment, the amphiphilic heparin derivative is dissolved in an aqueous solvent, a surfactant is mixed with the aqueous solvent and nanoparticles of the amphiphilic heparin derivative are disrupted, resulting in nanoparticles having surfactant molecules associated with the hydrophobic agent on the outside of the nanoparticles.
    Type: Application
    Filed: July 8, 2003
    Publication date: August 5, 2004
    Inventors: Youngro Byun, Yong-Kyu Lee
  • Publication number: 20040097044
    Abstract: Provided are a silicon/oxide/nitride/oxide/silicon (SONOS) memory, a fabricating method thereof, and a memory programming method. The SONOS memory includes a substrate; a first insulating layer stacked on the substrate; a semiconductor layer, which is patterned on the first insulating layer in a predetermined shape, including source and drain electrodes separated by a predetermined interval; a second insulating layer located on the semiconductor layer between the source and drain electrodes; a memory layer, which is deposited on sides of a portion of the semiconductor layer between the source and drain electrodes and on sides and an upper surface of the second insulating layer, including electron transferring channels and an electron storing layer; and a gate electrode, which is deposited on a surface of the memory layer, for controlling transfer of electrons in the memory layer. The programming method may provide a large capacity, stable, multi-level memory.
    Type: Application
    Filed: June 13, 2003
    Publication date: May 20, 2004
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Chung-woo Kim, Byung-gook Park, Jong-duk Lee, Yong-kyu Lee
  • Patent number: 6724661
    Abstract: A method for performing an erase operation in a memory cell. A first voltage and a second voltage are applied to the source and drain regions, respectively, for a predetermined erase time; and the first and second voltages are switched with each other between the source and drain regions at least one time for the erase time. Thereby, hole is easily injected to the source and drain regions and a channel lateral surface, and a uniform and high-speed erase operation is archived.
    Type: Grant
    Filed: May 31, 2002
    Date of Patent: April 20, 2004
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yong-Kyu Lee, Dong-Jun Kim, Min-Soo Cho, Eui-Youl Ryu, Jin-Ho Kim
  • Publication number: 20040014284
    Abstract: In a non-volatile semiconductor memory device and a fabrication method thereof, a charge storage layer is formed on a substrate. A control gate layer is formed on the charge storage layer. A gate mask having a spacer-shape is formed on the control gate layer. The charge storage layer and the control gate layer are removed using the gate mask as protection to form a control gate and a charge storage region.
    Type: Application
    Filed: July 9, 2003
    Publication date: January 22, 2004
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Dong-Jun Kim, Jin-Ho Kim, Yong-Kyu Lee, Min-Soo Cho, Eui-Youl Ryu
  • Patent number: 6656922
    Abstract: Polysaccharides, which are widely used as an anticoagulation drugs, especially heparin, are clinically administered only by intravenous or subcutaneous injection because of their strong hydrophilicity and high negative charge. Amphiphilic heparin derivatives were synthesized by conjugation to bile acids, sterols, and alkanoic acids, respectively. These heparin derivatives were slightly hydrophobic, exhibited good solubility in water, and have high anticoagulation activity. These slightly hydrophobic heparin derivatives are efficiently absorbed in the gastrointestinal tract and can be used in oral dosage forms. Methods of using these amphiphilic heparin derivatives and similarly modified macromolecules for oral administration are also disclosed.
    Type: Grant
    Filed: April 30, 2001
    Date of Patent: December 2, 2003
    Assignee: Mediplex Corporation, Korea
    Inventors: Youngro Byun, Yong-Kyu Lee
  • Patent number: 6589943
    Abstract: Formulations for enhanced mucosal absorption of heparin are disclosed. In one embodiment, a powdered heparin composition is made by dissolving an amphiphilic heparin derivative including heparin covalently bonded to a hydrophobic agent in a water phase, dispersing the water phase in an organic phase such that an emulsion is formed, and drying the emulsion. In another embodiment, an amorphiphilic heparin derivative dispersed in an oil phase is made by dissolving the amphiphilic heparin derivative in water or a water/organic co-solvent, dispersing the water or co-solvent in the oil phase, and evaporating the water or co-solvent. In another embodiment, heparin-containing nanoparticles having surfactant molecules associated with a hydrophobic agent on the outside of the nanoparticles are made by dissolving the amphiphilic heparin derivative in an aqueous solvent, mixing the surfactant with the aqueous solvent, and disrupting nanoparticles of the amphiphilic heparin derivative.
    Type: Grant
    Filed: May 9, 2001
    Date of Patent: July 8, 2003
    Assignee: Mediplex Corporation, Korea
    Inventors: Youngro Byun, Yong-Kyu Lee
  • Patent number: 6563168
    Abstract: A non-volatile semiconductor device and a method of making such a device having a memory cell formation part and a peripheral circuit part having high and low-voltage transistor formation parts, wherein the device includes an anti-punch through region surrounding a drain region in the memory cell formation part, and surrounding drain and source regions of the low-voltage transistor formation part.
    Type: Grant
    Filed: November 21, 2001
    Date of Patent: May 13, 2003
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Yong-Kyu Lee
  • Publication number: 20030016561
    Abstract: A method for performing an erase operation in a memory cell. A first voltage and a second voltage are applied to the source and drain regions, respectively, for a predetermined erase time; and the first and second voltages are switched with each other between the source and drain regions at least one time for the erase time. Thereby, hole is easily injected to the source and drain regions and a channel lateral surface, and a uniform and high-speed erase operation is archived.
    Type: Application
    Filed: May 31, 2002
    Publication date: January 23, 2003
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Yong-Kyu Lee, Dong-Jun Kim, Min-Soo Cho, Eui-Youl Ryu, Jin-Ho Kim
  • Publication number: 20030000471
    Abstract: The present invention provides a thin film deposition apparatus that prevent a wafer from the thermal budget so as to form a thin film without any damages. The thin film deposition apparatus includes a chamber where a wafer is loaded; a gas supplier containing a plurality of gases, the gas supplier connected with the chamber through at least a gas inflow pipe so as to supplying the plurality of gases into the chamber; an airtight reaction room in the chamber where the plurality of gases are reaction with one another so as to form a thin film on the wafer; and a gas pre-treatment device in the gas supplier, the gas pre-treatment device thermal-treating at least one of the plurality of gases at a temperature in the range of more than 300 to less than 2000 degrees centigrade; wherein the gas pre-treatment device is connected to at least a connecting pipe.
    Type: Application
    Filed: June 18, 2002
    Publication date: January 2, 2003
    Inventors: Soo-Sik Yoon, Seung-Dong Kang, Yu-Dong Lim, Yong-Kyu Lee
  • Patent number: 6486508
    Abstract: A non-volatile semiconductor memory device and the fabricating method thereof, wherein control gates respectively formed at the active areas of the resultant structure for getting a corresponding pair of split floating gates continuously overlapped and buried diffusion areas formed at the substrate of the periphery of the field insulating layer positioned between neighboring source areas to prevent the source areas from being electrically disconnected by the field insulating layer, even if the floating gate pattern and the control gate pattern are respectively made by separate processes, so that there will be no mismatching between the aforementioned two patterns, thereby leading to no tendency of showing different characteristics of memory cells in accordance with odd/even numbered word lines, the schematic characteristic of cells makes it possible to program and erase a byte, and one contact hole is not used at each bit line, the number of contact holes gets small, thereby making it possible to scale down c
    Type: Grant
    Filed: May 10, 2000
    Date of Patent: November 26, 2002
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Yong-Kyu Lee
  • Publication number: 20020100926
    Abstract: In a non-volatile semiconductor memory device and a fabrication method thereof, a charge storage layer is formed on a substrate. A control gate layer is formed on the charge storage layer. A gate mask having a spacer-shape is formed on the control gate layer. The charge storage layer and the control gate layer are removed using the gate mask as protection to form a control gate and a charge storage region.
    Type: Application
    Filed: January 3, 2002
    Publication date: August 1, 2002
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Dong-Jun Kim, Jin-Ho Kim, Yong-Kyu Lee, Min-Soo Cho, Eui-Youl Ryu
  • Publication number: 20020052080
    Abstract: A non-volatile semiconductor device and a method of making such a device having a memory cell formation part and a peripheral circuit part having high and low-voltage transistor formation parts, wherein the device includes an anti-punch through region surrounding a drain region in the memory cell formation part, and surrounding drain and source regions of the low-voltage transistor formation part.
    Type: Application
    Filed: November 21, 2001
    Publication date: May 2, 2002
    Inventor: Yong-Kyu Lee
  • Patent number: 6348378
    Abstract: A non-volatile semiconductor device and a method of making such a device having a memory cell formation part and a peripheral circuit part having high and low-voltage transistor formation parts, wherein the device includes an anti-punch through region surrounding a drain region in the memory cell formation part, and surrounding drain and source regions of the low-voltage transistor formation part.
    Type: Grant
    Filed: July 8, 1999
    Date of Patent: February 19, 2002
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Yong-Kyu Lee
  • Publication number: 20020013292
    Abstract: Formulations for enhanced mucosal absorption of heparin are disclosed. In one preferred embodiment, an amphiphilic heparin derivative composed of heparin covalently bonded to a hydrophobic agent is dissolved in a water phase, the water phase is then dispersed in an organic phase such that an emulsion is formed, and then the emulsion is dried to obtain a powdered composition. In another embodiment, the amphiphilic heparin derivative is dissolved in water or a water/organic co-solvent, the water or co-solvent is then dispersed in an oil phase, and then the water or co-solvent is evaporated, resulting in the amphiphilic heparin derivative dispersed in the oil phase. In another embodiment, the amphiphilic heparin derivative is dissolved in an aqueous solvent, a surfactant is mixed with the aqueous solvent and nanoparticles of the amphiphilic heparin derivative are disrupted, resulting in nanoparticles having surfactant molecules associated with the hydrophobic agent on the outside of the nanoparticles.
    Type: Application
    Filed: May 9, 2001
    Publication date: January 31, 2002
    Inventors: Youngre Byun, Yong-Kyu Lee
  • Publication number: 20020010153
    Abstract: Polysaccharides, which are widely used as an anticoagulation drugs, especially heparin, are clinically administered only by intravenous or subcutaneous injection because of their strong hydrophilicity and high negative charge. Amphiphilic heparin derivatives were synthesized by conjugation to bile acids, sterols, and alkanoic acids, respectively. These heparin derivatives were slightly hydrophobic, exhibited good solubility in water, and have high anticoagulation activity. These slightly hydrophobic heparin derivatives are efficiently absorbed in the gastrointestinal tract and can be used in oral dosage forms. Methods of using these amphiphilic heparin derivatives and similarly modified macromolecules for oral administration are also disclosed.
    Type: Application
    Filed: April 30, 2001
    Publication date: January 24, 2002
    Inventors: Youngro Byun, Yong-Kyu Lee
  • Patent number: 6245753
    Abstract: Polysaccharides, which are widely used as an anticoagulation drugs, especially heparin, are clinically administered only by intravenous or subcutaneous injection because of their strong hydrophilicity and high negative charge. Amphiphilic heparin derivatives were synthesized by conjugate to bile acids, sterols, and alkanoic acids, respectively. The hydrophobicity of the heparin derivatives depended on the feed mole ratio of heparin to hydrophobic agent. The heparin derivatives were slightly hydrophobic and exhibited good solubility in a water-acetone solvent, as well as water. The heparin derivatives have a high anticoagulant activity. These slightly hydrophobic heparin derivatives can be absorbed in gastric intestinal tract and can be used as oral dosage form. Also, the heparin derivatives can be used for the surface modification to prevent anticoagulation for medical devices such as extracorporeal devices and implanted devices.
    Type: Grant
    Filed: April 27, 1999
    Date of Patent: June 12, 2001
    Assignee: Mediplex Corporation, Korea
    Inventors: Youngro Byun, Yong-Kyu Lee
  • Patent number: 5903097
    Abstract: A method of manufacturing a side glass for a vacuum fluorescent display is provided wherein a glass is cut to a predetermined length in accordance with the size of the vacuum fluorescent display. The glass is then bent to coincide two ends of the glass in accordance with the shape of the vacuum fluorescent display, and the two ends of the glass are adhered to one another. A sealing frit is applied on the upper side of the glass, and is plasticized and cured.
    Type: Grant
    Filed: December 29, 1997
    Date of Patent: May 11, 1999
    Assignee: Samsung Display Devices Co., Ltd.
    Inventor: Yong-kyu Lee