Patents by Inventor Yong Liang

Yong Liang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6434044
    Abstract: Techniques for producing and supplying various voltage levels within a memory system having multiple memory blocks (e.g., memory chips) are described. The various voltage levels can be produced by voltage generation circuitry (e.g., charge pump and/or regulator circuitry) within the memory system. The various voltage levels can be supplied to the multiple memory blocks through a power bus. According to one aspect, charge pump and/or regulator circuits are provided within at most one of the memory blocks of a memory system (unless back-ups are provided for fault tolerance), and a power bus is used to distribute the generated voltage levels to other of the memory blocks. According to another aspect, a memory controller generates multiple supply voltage levels that are distributed (e.g., via a power bus) to each of the memory blocks.
    Type: Grant
    Filed: February 16, 2001
    Date of Patent: August 13, 2002
    Assignee: SanDisk Corporation
    Inventors: Geoffrey Steven Gongwer, Kevin M. Conley, Chi-Ming Wang, Yong Liang Wang, Raul Adrian Cernea
  • Publication number: 20020102418
    Abstract: A stable oxidized structure and an improved method of making such a structure, including an improved method of making an interfacial template for growing a crystalline metal oxide structure, are disclosed. The improved method comprises the steps of providing a substrate with a clean surface and depositing a metal on the surface at a high temperature under a vacuum to form a metal-substrate compound layer on the surface with a thickness of less than one monolayer. The compound layer is then oxidized by exposing the compound layer to essentially oxygen at a low partial pressure and low temperature. The method may further comprise the step of annealing the surface while under a vacuum to further stabilize the oxidized film structure. A crystalline metal oxide structure may be subsequently epitaxially grown by using the oxidized film structure as an interfacial template and depositing on the interfacial template at least one layer of a crystalline metal oxide.
    Type: Application
    Filed: January 26, 2001
    Publication date: August 1, 2002
    Inventors: Shupan Gan, Yong Liang
  • Publication number: 20020016983
    Abstract: The invention provides methods and compositions for heavy metal phytoremediation, including plants which are genetically engineered to overexpress glutamylcysteine synthetase (ECS) and thereby provide enhanced heavy metal accumulation. In various embodiments, the plants comprise a gene encoding ECS operably linked to a heterologous promoter, the plant is a member of the Brassicaceae family. In general, the methods comprise the steps of growing such plants in a medium such as soil or water comprising a heavy metal, under conditions wherein ECS is overexpressed, whereby the plant provides enhanced accumulation of the heavy metal, whereby the heavy metal content of the medium is decreased.
    Type: Application
    Filed: August 20, 2001
    Publication date: February 7, 2002
    Inventors: Norman Terry, Elizabeth Pilon-Smits, Yong Liang Zhu