Abstract: A thin film transistor for incorporation into an active-matrix liquid crystal display includes an active layer provided on a substrate. An electrode insulating layer is formed on the active layer, and a gate electrode including first and second gate layers is provided on the electrode insulating layer. The second gate layer overlies the first gate layer and has a width greater than the first gate layer. LDD regions, self-aligned with the second gate layer are provided in the active layer adjacent source and drain regions. The active layer further including a channel region located under the first gate layer and offset regions located under portions of the second gate layer extending beyond the first gate layer at opposite sides of the channel region.

Abstract: A liquid crystal display device (LCD) is provided which includes a plurality of gate lines and a plurality of signal lines arranged perpendicular to each other. A common line is formed on the periphery of a display portion of the LCD, and a static electricity preventing device having a first floating gate structure is connected between the gate line and common line, and second floating gate structure is connected between the signal line and common line.

Abstract: A method for forming a thin film transistor includes the steps of depositing a semiconductor layer on a substrate and patterning the semiconductor layer to form an active region, forming a gate insulation layer on the active layer and the substrate, forming a gate conductive layer on the gate insulation layer, forming a metal layer on the gate conductive layer and the gate insulation layer, forming a silicide layer by reacting the gate conductive layer with the metal layer, removing an unreacted portion of the metal layer, forming a high-density impurity region in the active layer by ion-implantation using the silicide layer as a mask, forming a gate electrode by removing the silicide layer, and forming an interlayer insulation layer on the exposed surface of the gate electrode and gate insulation layer.