Abstract: A pH responsive quencher based on a conjugated polymer and responding to an in vivo redox reaction and a preparation method thereof are provided. The pH responsive quencher can evaluate a metabolism environment according to a pH value in vivo with a characteristic that an absorption wavelength band sensitively changes depending on a pH condition.

Abstract: A semiconductor device is provided. A substrate includes a fin. The fin extends in a first direction. A gate structure is disposed on a first region of the fin. The gate structure extends in a second direction crossing the first direction. A source/drain is disposed on a second region of the fin. The first source/drain is disposed on at least one sidewall of the gate structure. A top surface of the first region is lower than a top surface of the second region.

Abstract: A method of manufacturing a light emitting diode (LED) package may include forming a light emitting structure having a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer on a growth substrate, forming first and second electrodes connected to the first and second conductivity-type semiconductor layers, respectively, bonding a first surface of a light transmissive substrate opposite to a second surface thereof to the light emitting structure, identifying positions of the first and second electrodes that are seen through the second surface of the light transmissive substrate, forming one or more through holes in the light transmissive substrate to correspond to the first and second electrodes, and forming first and second via electrodes by filling the through holes with a conductive material.

Abstract: A light emitting device package including a first electrode pad and a second electrode pad formed to contact a lower surface of a light emitting device; a bonded insulating layer pattern formed to at least partially cover side surfaces and lower surfaces of the first electrode pad and the second electrode pad; a substrate, in which via holes are formed which penetrate the substrate from a first surface of the substrate that contacts a lower surface of the bonded insulating layer pattern to a second surface of the substrate that is opposite to the first surface; a through-electrode disposed in each via hole and contacting the lower surface of one of the respective first electrode pad and the second electrode pad; and a through-electrode insulating layer formed between the through-electrode and the substrate, and having an upper surface that contacts a portion of the lower surface of the bonded insulating layer pattern.

Abstract: A method of manufacturing a light emitting diode (LED) package may include forming a light emitting structure having a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer on a growth substrate, forming first and second electrodes connected to the first and second conductivity-type semiconductor layers, respectively, bonding a first surface of a light transmissive substrate opposite to a second surface thereof to the light emitting structure, identifying positions of the first and second electrodes that are seen through the second surface of the light transmissive substrate, forming one or more through holes in the light transmissive substrate to correspond to the first and second electrodes, and forming first and second via electrodes by filling the through holes with a conductive material.

Abstract: A light-emitting diode package includes a light-emitting structure, a first electrode pad and a second electrode pad connected with the light-emitting structure, an insulating pattern layer in contact with a bottom surface of the light-emitting structure and abutting the first and second electrode pads, a substrate including via-holes in contact with a bottom surface of the insulating pattern layer and exposing a portion of the first electrode pad and a portion of the second electrode pad, a first penetrating electrode and a second penetrating electrode that are disposed in the via-holes and respectively connected with the first and second electrode pads, a fluorescent material layer disposed on the light-emitting structure, a glass disposed on and spaced apart from the light-emitting structure with the fluorescent material layer therebetween.

Abstract: A light emitting diode package includes a package body having first and second electrode structures, a light emitting diode chip having a surface, on which first and second electrodes are disposed. The light emitting diode chip is disposed on the first and second electrode structures of the package body. A sheet-type wavelength conversion layer having a substantially constant thickness is disposed on an upper surface of the light emitting diode chip, and an encapsulating portion is disposed to surround the light emitting diode chip and the wavelength conversion layer. The encapsulating portion has an upper surface substantially parallel to the wavelength conversion layer. Side surfaces of the encapsulating portion have a plurality of side slope sections inclined toward the upper surface of the encapsulating portion.

Abstract: An apparatus and method for fabricating a semiconductor device using a 4-way valve with improved purge efficiency by improving a gas valve system by preventing dead volume from occurring are provided. The apparatus includes a reaction chamber in which a substrate is processed to fabricate a semiconductor device; a first processing gas supply pipe supplying a first processing gas into the reaction chamber; a 4-way valve having a first inlet, a second inlet, a first outlet, and a second outlet and installed at the first processing gas supply pipe such that the first inlet and the first outlet are connected to the first processing gas supply pipe; a second processing gas supply pipe connected to the second inlet of the 4-way valve to supply a second processing gas; a bypass connected to the second outlet of the 4-way valve; and a gate valve installed at the bypass.

Abstract: Disclosed is that a method of manufacturing horizontally aligned single crystalline inorganic nanowire patterns, including mixing an inorganic precursor and an organic polymer in water or an organic solvent to prepare an inorganic-polymer liquid, forming inorganic precursor/organic polymer composite nanowire patterns aligned on a substrate using the inorganic-polymer liquid, and irradiating eximer laser along the aligned inorganic precursor/organic polymer composite nanowire patterns.

Abstract: Disclosed is that a method of manufacturing horizontally aligned single crystalline inorganic nanowire patterns, including mixing an inorganic precursor and an organic polymer in water or an organic solvent to prepare an inorganic-polymer liquid, forming inorganic precursor/organic polymer composite nanowire patterns aligned on a substrate using the inorganic-polymer liquid, and irradiating eximer laser along the aligned inorganic precursor/organic polymer composite nanowire patterns.

Abstract: An array substrate for a display device includes a first thin film transistor (TFT) including a first semiconductor layer, a first gate electrode corresponding to the first semiconductor layer, a first source electrode and a first drain electrode; a second TFT including a second semiconductor layer, a second gate electrode corresponding to the second semiconductor layer, a second source electrode and a second drain electrode; a first transparent capacitor electrode connected to the first drain electrode; a first passivation layer on the first transparent capacitor electrode; a second transparent capacitor electrode on the first passivation layer and connected to the second drain electrode, the second transparent capacitor electrode overlapping the first transparent capacitor electrode; a second passivation layer on or over the first passivation layer and the second transparent capacitor electrode; and a first electrode on the second passivation layer and connected to the second transparent capacitor electrode

Abstract: To fabricate patterns of a semiconductor device, a mask film is formed on a substrate. A plurality of first patterns and a plurality of second patterns are formed on the mask film. The plurality of first patterns is spaced apart from each other at a first distance. The plurality of second patterns is spaced apart from each other at a second distance. The second distance is different from the first distance. A spacer film is conformally formed on the plurality of first patterns and the plurality of second patterns to a predetermined thickness. The spacer film fills spaces between the plurality of second patterns. A part of the spacer film is partially removed to form a plurality of spacer film patterns are formed on side walls of the plurality of the first patterns. The plurality of first patterns and the plurality of second patterns are removed. A plurality of patterns is formed on the substrate using the plurality of spacer film as a mask.

Abstract: A method and apparatus for extracting an ionospheric trace are provided. The trace extraction method includes: searching for a signal data having maximum strength among signal data displayed on an ionogram of the ionosphere; selecting the point where the signal data having maximum strength is placed as a first point; extracting the trace on the right side of the first point while increasing frequency of the signal data; and extracting the trace on the left side of the first point while decreasing the frequency.

Abstract: Disclosed is an organic light emitting display device. The organic light emitting display device includes: at least one transistor arranged in a transistor region of the substrate and configured to include a channel layer, an insulation film, a gate electrode, a source electrode and a drain electrode; a storage capacitor arranged in the storage capacitor region, the pixel region and the pad region of the substrate and configured to include a first storage electrode, an insulation film pattern and a second storage electrode; a color filter arranged over the storage capacitor opposite to the pixel region; and an organic light emitting diode arranged on the color filter and configured to include a first electrode, an organic emission layer and a second electrode.

Abstract: Provided are a semiconductor device and a bonding structure thereof, in which an inter-metal compound is not formed with a semiconductor die or a lead frame, thereby improving electrical and mechanical properties and wettability and suppressing conglomeration of a die bonding material. The semiconductor device includes a semiconductor die, a barrier layer formed on a surface of the semiconductor die, a first metal layer formed on the barrier layer, a central metal layer formed on the first metal layer, and a second metal layer formed on the central metal layer. Here, the first and second metal layers have a first melting temperature, and the central metal layer has a second melting temperature lower than the first melting temperature.

Abstract: A semiconductor light emitting device includes a light emitting structure, a first electrode unit, and a second electrode unit. The light emitting structure includes a first and second conductivity-type semiconductor layer, an active layer. The first electrode unit includes a first electrode pad and a first electrode finger extending from the first electrode pad, and having an annular shape with an open portion. The second electrode unit includes a second electrode pad and a second electrode finger extending from the second electrode pad, and has an annular shape with an open portion. One of the first and second electrode units substantially surrounds the other, and the center of the annular shape of at least one of the first and second electrode units is spaced apart from the center of the upper surface of the light emitting structure.

Abstract: The present application provides an electronic device package. The package includes a packaging substrate having first and second surfaces opposing one another. First and second electrode patterns are formed on the first surface and first and second external terminals connected to the first and second electrode patterns. The second electrode pattern is electrically insulated from the first electrode pattern and surrounds the first electrode pattern An electronic device is mounted on the first surface of the packaging substrate and includes first and second electrodes disposed on a surface thereof facing the packaging substrate. The first and second electrodes are positioned on the first and second electrode patterns, respectively.

Abstract: An array substrate for a display device includes a first thin film transistor (TFT) including a first semiconductor layer, a first gate electrode corresponding to the first semiconductor layer, a first source electrode and a first drain electrode; a second TFT including a second semiconductor layer, a second gate electrode corresponding to the second semiconductor layer, a second source electrode and a second drain electrode; a first transparent capacitor electrode connected to the first drain electrode; a first passivation layer on the first transparent capacitor electrode; a second transparent capacitor electrode on the first passivation layer and connected to the second drain electrode, the second transparent capacitor electrode overlapping the first transparent capacitor electrode; a second passivation layer on or over the first passivation layer and the second transparent capacitor electrode; and a first electrode on the second passivation layer and connected to the second transparent capacitor electrode

Abstract: A power casing apparatus of an image display module includes a display panel configured to have a Light-Emitting Diode module disposed in a front thereof; a bus bar unit installed in the rear of the display panel and configured to supply driving power to the LED module and to have a pair of electrode blades disposed on one side thereof; and a power casing unit disposed in the bus bar unit in such a way as to be attached to or detached from the bus bar unit and configured to supply the driving power to the bus bar unit and to have a pair of power supply connectors disposed at positions corresponding to the respective electrode blades on one side.

Abstract: A method for an ionosonde to analyze the electron density of the ionosphere includes: receiving oblique sounding data in an oblique direction, rather than vertically above the ionosonde in the sky; converting the oblique sounding data into vertical sounding data; calculating the amplitude array based on the vertical sounding data; and analyzing the electron density of the ionosphere in the sky at an intermediate location based on the oblique sounding data and the converted vertical sounding data.