Patents by Inventor Yong Seok Han
Yong Seok Han has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11935984Abstract: A quantum dot including a core that includes a first semiconductor nanocrystal including zinc and selenium, and optionally sulfur and/or tellurium, and a shell that includes a second semiconductor nanocrystal including zinc, and at least one of sulfur or selenium is disclosed. The quantum dot has an average particle diameter of greater than or equal to about 13 nm, an emission peak wavelength in a range of about 440 nm to about 470 nm, and a full width at half maximum (FWHM) of an emission wavelength of less than about 25 nm. A method for preparing the quantum dot, a quantum dot-polymer composite including the quantum dot, and an electronic device including the quantum dot is also disclosed.Type: GrantFiled: December 14, 2022Date of Patent: March 19, 2024Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Yong Seok Han, Sung Woo Kim, Jin A Kim, Tae Hyung Kim, Kun Su Park, Yuho Won, Jeong Hee Lee, Eun Joo Jang, Hyo Sook Jang
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Publication number: 20240079945Abstract: Provided is a testing apparatus for an active current control-type non-contact superconductive exciter having a hybrid magnet installed therein, and a high-temperature superconductive rotating machine using same. Provided is principally characterized by having a hybrid magnet, in a module form, in which a permanent magnet, a DC electromagnet and an AC electromagnet are used together, wherein the hybrid magnet is set in a plurality along the circumferential direction of a ring-shaped iron stator, is formed to correspond to the outer side of a rotor, having a high-temperature superconductive tape (or a second-generation high-temperature superconductive wire), of a non-contact superconductive exciter, and thus enables a selected operation (charging, discharging and the like) before and after rotation of a driving motor.Type: ApplicationFiled: January 7, 2022Publication date: March 7, 2024Inventors: Ho Min KIM, Ji Hyung KIM, Yoon Seok CHAE, Yong Soo YOON, Seung Hak HAN
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Patent number: 11867988Abstract: A layered structure including a transparent substrate; a photoluminescent layer disposed on the transparent substrate and a pattern of a quantum dot polymer composite; and a capping layer disposed on the photoluminescent layer and including an inorganic material, a method of producing the same, a liquid crystal display including the same. The quantum dot polymer composite includes a polymer matrix; and a plurality of quantum dots in the polymer matrix, the pattern of the quantum dot polymer composite includes at least one repeating section and the repeating section includes a first section configured to emit light of a first peak wavelength, the inorganic material is disposed on at least a portion of a surface of the repeating section, and the inorganic material includes a metal oxide, a metal nitride, a metal oxynitride, a metal sulfide, or a combination thereof.Type: GrantFiled: August 23, 2021Date of Patent: January 9, 2024Assignees: SAMSUNG ELECTRONICS CO., LTD., SAMSUNG DISPLAY CO., LTD., SAMSUNG SDI CO., LTD.Inventors: Deukseok Chung, Shin Ae Jun, Tae Won Jeong, Yong Seok Han
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Patent number: 11845888Abstract: A cadmium free quantum dot not including cadmium and including: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, a composition and composite including the same, and an electronic device.Type: GrantFiled: November 17, 2022Date of Patent: December 19, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Yuho Won, Nayoun Won, Sungwoo Hwang, Eun Joo Jang, Soo Kyung Kwon, Yong Wook Kim, Jihyun Min, Garam Park, Shang Hyeun Park, Hyo Sook Jang, Shin Ae Jun, Yong Seok Han
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Patent number: 11835856Abstract: A photosensitive composition including a quantum dot dispersion, a photopolymerizable monomer having a carbon-carbon double bond, and a photoinitiator, wherein the quantum dot dispersion includes an acid group-containing polymer and a plurality of quantum dots dispersed in the acid group-containing polymer, and wherein the acid group-containing polymer includes a copolymer of a monomer combination including a first monomer having a carboxylic acid group or a phosphonic acid group and a carbon-carbon double bond and a second monomer having a carbon-carbon double bond and a hydrophobic group and not having a carboxylic acid group and a phosphonic acid group.Type: GrantFiled: March 17, 2021Date of Patent: December 5, 2023Assignees: SAMSUNG ELECTRONICS CO., LTD., SAMSUNG SDI CO., LTD.Inventors: Shin Ae Jun, Shang Hyeun Park, Hojeong Paek, Jonggi Kim, Hyeyeon Yang, Eun Joo Jang, Yong Seok Han
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Patent number: 11796911Abstract: A photosensitive composition including a quantum dot dispersion, a photopolymerizable monomer having a carbon-carbon double bond, and a photoinitiator, wherein the quantum dot dispersion includes an acid group-containing polymer and a plurality of quantum dots dispersed in the acid group-containing polymer, and wherein the acid group-containing polymer includes a copolymer of a monomer combination including a first monomer having a carboxylic acid group or a phosphonic acid group and a carbon-carbon double bond and a second monomer having a carbon-carbon double bond and a hydrophobic group and not having a carboxylic acid group and a phosphonic acid group.Type: GrantFiled: March 17, 2021Date of Patent: October 24, 2023Assignees: SAMSUNG ELECTRONICS CO., LTD., SAMSUNG SDI CO., LTD.Inventors: Shin Ae Jun, Shang Hyeun Park, Hojeong Paek, Jonggi Kim, Hyeyeon Yang, Eun Joo Jang, Yong Seok Han
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Patent number: 11758746Abstract: An electroluminescent device includes a first electrode and a second electrode facing each other; a hole transport layer between the first electrode and the second electrode; a light emitting layer including a first light emitting layer disposed between the hole transport layer and the second electrode and including a first quantum dot and a second light emitting layer between the first light emitting layer and the second electrode and including a second quantum dot; and an electron transport layer between the light emitting layer and the second electrode. Each of the first and second light emitting layers emits first light, hole transport capability per unit area and electron transport capability per unit area of the first quantum dot are greater than hole transport capability per unit area and electron transport capability per unit area of the second quantum dot, respectively.Type: GrantFiled: August 22, 2022Date of Patent: September 12, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sujin Park, Yuho Won, Eun Joo Jang, Dae Young Chung, Sung Woo Kim, Jin A Kim, Yong Seok Han
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Publication number: 20230235220Abstract: An electroluminescent device including a first electrode, a second electrode, and a light-emitting layer disposed between the first electrode and the second electrode, the light-emitting layer including a plurality of semiconductor nanoparticles, wherein the light-emitting layer is configured to emit green light, wherein the plurality of semiconductor nanoparticles include a first semiconductor nanocrystal including indium, phosphorus, and optionally zinc, and a second semiconductor nanocrystal including a zinc chalcogenide, wherein the zinc chalcogenide includes zinc, selenium, and sulfur, wherein in the plurality of the semiconductor nanoparticles, a mole ratio of zinc to indium is greater than or equal to about 60:1, and wherein the electroluminescent device is configured to exhibit a T90 of greater than or equal to about 120 hours as measured with an initial driving luminance of about 2700 nit.Type: ApplicationFiled: January 26, 2023Publication date: July 27, 2023Inventors: Jihyun MIN, Eun Joo JANG, Hyo Sook JANG, Yong Seok HAN, Ilyoung LEE, Oul CHO
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Patent number: 11661547Abstract: A quantum dot, including a core including a first semiconductor material that includes indium; and a shell including a second semiconductor material, and disposed on the core, wherein the first semiconductor material and the second semiconductor material are different, wherein the shell has at least two branch portions and a valley portion connecting the at least two branch portions, at least one of the at least two branch portions comprises Zn, Se, and S, and a content of sulfur in the at least one branch portion increases in a direction away from the core.Type: GrantFiled: May 26, 2020Date of Patent: May 30, 2023Assignees: SAMSUNG ELECTRONICS CO., LTD., SAMSUNG SDI CO., LTD., SAMSUNG DISPLAY CO., LTD.Inventors: Shin Ae Jun, Taekhoon Kim, Garam Park, Yong Seok Han, Eun Joo Jang, Hyo Sook Jang, Tae Won Jeong, Shang Hyeun Park
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Publication number: 20230114604Abstract: A quantum dot including a core that includes a first semiconductor nanocrystal including zinc and selenium, and optionally sulfur and/or tellurium, and a shell that includes a second semiconductor nanocrystal including zinc, and at least one of sulfur or selenium is disclosed. The quantum dot has an average particle diameter of greater than or equal to about 13 nm, an emission peak wavelength in a range of about 440 nm to about 470 nm, and a full width at half maximum (FWHM) of an emission wavelength of less than about 25 nm. A method for preparing the quantum dot, a quantum dot-polymer composite including the quantum dot, and an electronic device including the quantum dot is also disclosed.Type: ApplicationFiled: December 14, 2022Publication date: April 13, 2023Inventors: Yong Seok HAN, Sung Woo KIM, Jin A KIM, Tae Hyung KIM, Kun Su PARK, Yuho WON, Jeong Hee LEE, Eun Joo JANG, Hyo Sook JANG
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Publication number: 20230106180Abstract: A cadmium free quantum dot not including cadmium and including: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, a composition and composite including the same, and an electronic device.Type: ApplicationFiled: November 17, 2022Publication date: April 6, 2023Inventors: Yuho WON, Nayoun WON, Sungwoo HWANG, Eun Joo JANG, Soo Kyung KWON, Yong Wook KIM, Jihyun MIN, Garam PARK, Shang Hyeun PARK, Hyo Sook JANG, Shin Ae JUN, Yong Seok HAN
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Publication number: 20230071604Abstract: A quantum dot including a core comprising a first semiconductor nanocrystal including a zinc chalcogenide and a semiconductor nanocrystal shell disposed on the surface of the core and comprising zinc, selenium, and sulfur. The quantum dot does not comprise cadmium, emits blue light, and may exhibit a digital diffraction pattern obtained by a Fast Fourier Transform of a transmission electron microscopic image including a (100) facet of a zinc blende structure. In an X-ray diffraction spectrum of the quantum dot, a ratio of a defect peak area with respect to a peak area of a zinc blende crystal structure is less than about 0.8:1. A method of producing the quantum dot, and an electroluminescent device including the quantum dot are also disclosed.Type: ApplicationFiled: November 11, 2022Publication date: March 9, 2023Inventors: Sung Woo KIM, Jin A KIM, Tae Hyung KIM, Kun Su PARK, Yuho WON, Jeong Hee LEE, Eun Joo JANG, Eun Joo JANG, Hyo Sook JANG, Yong Seok HAN, Heejae CHUNG
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Patent number: 11566176Abstract: A semiconductor nanocrystal particle including a core including a first semiconductor nanocrystal including zinc (Zn) and sulfur (S), selenium (Se), tellurium (Te), or a combination thereof; and a shell including a second semiconductor nanocrystal disposed on at least a portion of the core, wherein the core includes a dopant of a Group 1A element, a Group 2A element, or a combination thereof, and the semiconductor nanocrystal particle exhibits a maximum peak emission in a wavelength region of about 440 nanometers (nm) to about 470 nm.Type: GrantFiled: April 17, 2020Date of Patent: January 31, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jeong Hee Lee, Hyo Sook Jang, Sung Woo Kim, Jin A Kim, Tae Hyung Kim, Yuho Won, Eun Joo Jang, Yong Seok Han
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Patent number: 11563143Abstract: A quantum dot including a core that includes a first semiconductor nanocrystal including zinc and selenium, and optionally sulfur and/or tellurium, and a shell that includes a second semiconductor nanocrystal including zinc, and at least one of sulfur or selenium is disclosed. The quantum dot has an average particle diameter of greater than or equal to about 13 nm, an emission peak wavelength in a range of about 440 nm to about 470 nm, and a full width at half maximum (FWHM) of an emission wavelength of less than about 25 nm. A method for preparing the quantum dot, a quantum dot-polymer composite including the quantum dot, and an electronic device including the quantum dot is also disclosed.Type: GrantFiled: August 20, 2020Date of Patent: January 24, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Yong Seok Han, Sung Woo Kim, Jin A Kim, Tae Hyung Kim, Kun Su Park, Yuho Won, Jeong Hee Lee, Eun Joo Jang, Hyo Sook Jang
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Publication number: 20220399516Abstract: An electroluminescent device includes a first electrode and a second electrode facing each other; a hole transport layer between the first electrode and the second electrode; a light emitting layer including a first light emitting layer disposed between the hole transport layer and the second electrode and including a first quantum dot and a second light emitting layer between the first light emitting layer and the second electrode and including a second quantum dot; and an electron transport layer between the light emitting layer and the second electrode. Each of the first and second light emitting layers emits first light, hole transport capability per unit area and electron transport capability per unit area of the first quantum dot are greater than hole transport capability per unit area and electron transport capability per unit area of the second quantum dot, respectively.Type: ApplicationFiled: August 22, 2022Publication date: December 15, 2022Inventors: Sujin PARK, Yuho WON, Eun Joo JANG, Dae Young CHUNG, Sung Woo KIM, Jin A KIM, Yong Seok HAN
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Patent number: 11505740Abstract: A cadmium free quantum dot not including cadmium and including: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, a composition and composite including the same, and an electronic device.Type: GrantFiled: September 30, 2021Date of Patent: November 22, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Yuho Won, Nayoun Won, Sungwoo Hwang, Eun Joo Jang, Soo Kyung Kwon, Yong Wook Kim, Jihyun Min, Garam Park, Shang Hyeun Park, Hyo Sook Jang, Shin Ae Jun, Yong Seok Han
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Patent number: 11499098Abstract: A quantum dot including a core comprising a first semiconductor nanocrystal including a zinc chalcogenide and a semiconductor nanocrystal shell disposed on the surface of the core and comprising zinc, selenium, and sulfur. The quantum dot does not comprise cadmium, emits blue light, and may exhibit a digital diffraction pattern obtained by a Fast Fourier Transform of a transmission electron microscopic image including a (100) facet of a zinc blende structure. In an X-ray diffraction spectrum of the quantum dot, a ratio of a defect peak area with respect to a peak area of a zinc blende crystal structure is less than about 0.8:1. A method of producing the quantum dot, and an electroluminescent device including the quantum dot are also disclosed.Type: GrantFiled: August 31, 2020Date of Patent: November 15, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sung Woo Kim, Jin A Kim, Tae Hyung Kim, Kun Su Park, Yuho Won, Jeong Hee Lee, Eun Joo Jang, Hyo Sook Jang, Yong Seok Han, Heejae Chung
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Patent number: 11424425Abstract: An electroluminescent device includes a first electrode and a second electrode facing each other; a hole transport layer between the first electrode and the second electrode; a light emitting layer including a first light emitting layer disposed between the hole transport layer and the second electrode and including a first quantum dot and a second light emitting layer between the first light emitting layer and the second electrode and including a second quantum dot; and an electron transport layer between the light emitting layer and the second electrode. Each of the first and second light emitting layers emits first light, each of the first and second quantum dots has a core-shell structure including one or more shells, and the first and second quantum dots have different numbers of shells from each other or have different total thicknesses of the one or more shells from each other.Type: GrantFiled: October 2, 2020Date of Patent: August 23, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sujin Park, Yuho Won, Eun Joo Jang, Dae Young Chung, Sung Woo Kim, Jin A Kim, Yong Seok Han
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Publication number: 20220209152Abstract: A light-emitting device including a first electrically conducting layer, a second electrically conducting layer, and a light-emitting layer disposed between the first electrically conducting layer and the second electrically conducting layer, the light emitting layer including light emitting nanostructures, wherein the light emitting layer is configured to emit green light, the light-emitting layer do not include cadmium, lead, or a combination thereof, the light emitting nanostructures include a first semiconductor nanocrystal including a Group III-V compound and a second semiconductor nanocrystal including a zinc chalcogenide, the Group III-V compound includes indium, phosphorus, and optionally zinc, the zinc chalcogenide includes zinc, selenium, and sulfur, the light emitting nanostructures exhibit a zinc blende structure, and in a two dimensional image of the light emitting nanostructures obtained by an electron microscopy analysis, an average value of squareness of the light emitting nanostructures is grType: ApplicationFiled: December 28, 2021Publication date: June 30, 2022Inventors: Yong Seok HAN, Eun Joo JANG, Hyo Sook JANG, Oul CHO, Jihyun MIN, Yuho WON
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Publication number: 20220017818Abstract: A cadmium free quantum dot not including cadmium and including: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, a composition and composite including the same, and an electronic device.Type: ApplicationFiled: September 30, 2021Publication date: January 20, 2022Inventors: Yuho WON, Nayoun WON, Sungwoo HWANG, Eun Joo JANG, Soo Kyung KWON, Yong Wook KIM, Jihyun MIN, Garam PARK, Shang Hyeun PARK, Hyo Sook JANG, Shin Ae JUN, Yong Seok HAN