Abstract: Provided are a noise cancellation method and apparatus, an electronic device, a noise cancellation earphone, and a storage medium. The method includes acquiring original sound source information; performing noise reduction (NR) processing on the original sound source information using active noise cancellation (ANC) to obtain first sound information and performing the NR processing on the original sound source information using environmental noise cancellation (ENC) to obtain second sound information; and mixing and adding the first sound information and the second sound information to obtain target sound information and playing the target sound information. In this method, the NR processing can be performed on the sound using the ANC and the ENC, thereby distinguishing environmental noise from human voice, improving the noise cancellation performance, and enabling a user to hear clearer sound.

Abstract: Various embodiments of the present application are directed towards a control gate layout to improve an etch process window for word lines. In some embodiments, an integrated chip comprises a memory array, an erase gate, a word line, and a control gate. The memory array comprises a plurality of cells in a plurality of rows and a plurality of columns. The erase gate and the word line are elongated in parallel along a row of the memory array. The control gate is elongated along the row and is between and borders the erase gate and the word line. Further, the control gate has a pad region protruding towards the erase gate and the word line. Because the pad region protrudes towards the erase gate and the word line, a width of the pad region is spread between word-line and erase-gate sides of the control gate.

Abstract: A semiconductor structure and method of manufacture is provided. In some embodiments, a semiconductor structure includes a semiconductor layer comprising a first uppermost surface, a lowermost surface, and a first sidewall surface extending between the uppermost surface and the lowermost surface. A gate dielectric layer is over the semiconductor layer. A first gate electrode is over a portion of the gate dielectric layer over the uppermost surface of the semiconductor layer. A first source/drain region is in the semiconductor layer under the first uppermost surface and adjacent the first gate electrode. A second source/drain region is in the semiconductor layer under the lowermost surface of the semiconductor layer.

Abstract: Various embodiments of the present disclosure are directed towards a method for opening a source line in a memory device. An erase gate line (EGL) and the source line are formed elongated in parallel. The source line underlies the EGL and is separated from the EGL by a dielectric layer. A first etch is performed to form a first opening through the EGL and stops on the dielectric layer. A second etch is performed to thin the dielectric layer at the first opening, wherein the first and second etches are performed with a common mask in place. A silicide process is performed to form a silicide layer on the source line at the first opening, wherein the silicide process comprises a third etch with a second mask in place and extends the first opening through the dielectric layer. A via is formed extending through the EGL to the silicide layer.

Abstract: The present disclosure relates to an integrated chip comprising a substrate having a first pair of opposing sidewalls that define a trench. The trench extends into a front-side surface of the substrate. A first source/drain region is disposed along the front-side surface of the substrate. A second source/drain region is disposed along the front-side surface of the substrate. A gate structure is disposed within the trench and is arranged laterally between the first source/drain region and the second source/drain region. The gate structure fills the trench and extends along the first pair of opposing sidewalls to an upper surface of the substrate. A bottom surface of the gate structure is disposed below a bottom surface of the first source/drain region.

Abstract: Various embodiments of the present disclosure are directed towards a method for opening a source line in a memory device. An erase gate line (EGL) and the source line are formed elongated in parallel. The source line underlies the EGL and is separated from the EGL by a dielectric layer. A first etch is performed to form a first opening through the EGL and stops on the dielectric layer. A second etch is performed to thin the dielectric layer at the first opening, wherein the first and second etches are performed with a common mask in place. A silicide process is performed to form a silicide layer on the source line at the first opening, wherein the silicide process comprises a third etch with a second mask in place and extends the first opening through the dielectric layer. A via is formed extending through the EGL to the silicide layer.

Abstract: A device includes an active region, a select gate, a control gate, a first metal alloy layer, and a second metal alloy layer. The active region has a source region and a drain region. The select gate is over the active region and between the source region and the drain region. The control gate is over the active region and between the source region and the select gate. The first metal alloy layer is in contact with the source region. The second metal alloy layer is in contact with the drain region and higher than a top surface of the control gate.

Abstract: The present disclosure relates to an integrated chip comprising a substrate having a first top surface disposed at a first height, a second top surface disposed at a second height that is less than the first height, and a connecting surface extending from the first top surface to the second top surface. A first source/drain region is disposed along the first top surface of the substrate. A second source/drain region is disposed along the second top surface of the substrate and is laterally separated from the first source/drain region by a channel region of the substrate. A gate structure is arranged between the first source/drain region and the second source/drain region. The gate structure extends from over the first top surface of the substrate to over the connecting surface of the substrate. The gate structure also extends below the first top surface of the substrate.

Abstract: The present disclosure relates to an integrated chip comprising a substrate having a first pair of opposing sidewalls that define a trench. The trench extends into a front-side surface of the substrate. A first source/drain region is disposed along the front-side surface of the substrate. A second source/drain region is disposed along the front-side surface of the substrate. A gate structure is disposed within the trench and is arranged laterally between the first source/drain region and the second source/drain region. The gate structure extends along the first pair of opposing sidewalls to an upper surface of the substrate. A bottom surface of the gate structure is disposed below a bottom surface of the first source/drain region.

Abstract: A device includes an active region, a select gate, a control gate, a first metal alloy layer, and a second metal alloy layer. The active region has a source region and a drain region. The select gate is over the active region and between the source region and the drain region. The control gate is over the active region and between the source region and the select gate. The first metal alloy layer is in contact with the source region. The second metal alloy layer is in contact with the drain region and higher than a top surface of the control gate.

Abstract: Various embodiments of the present disclosure are directed towards a method for opening a source line in a memory device. An erase gate line (EGL) and the source line are formed elongated in parallel. The source line underlies the EGL and is separated from the EGL by a dielectric layer. A first etch is performed to form a first opening through the EGL and stops on the dielectric layer. A second etch is performed to thin the dielectric layer at the first opening, wherein the first and second etches are performed with a common mask in place. A silicide process is performed to form a silicide layer on the source line at the first opening, wherein the silicide process comprises a third etch with a second mask in place and extends the first opening through the dielectric layer. A via is formed extending through the EGL to the silicide layer.

Abstract: The present disclosure relates to an integrated chip comprising a substrate having a first pair of opposing sidewalls that define a trench. The trench extends into a front-side surface of the substrate. A first source/drain region is disposed along the front-side surface of the substrate. A second source/drain region is disposed along the front-side surface of the substrate. A gate structure is disposed within the trench and is arranged laterally between the first source/drain region and the second source/drain region. The gate structure extends along the first pair of opposing sidewalls to an upper surface of the substrate. A bottom surface of the gate structure is disposed below a bottom surface of the first source/drain region.

Abstract: Various embodiments of the present disclosure are directed towards a method for opening a source line in a memory device. An erase gate line (EGL) and the source line are formed elongated in parallel. The source line underlies the EGL and is separated from the EGL by a dielectric layer. A first etch is performed to form a first opening through the EGL and stops on the dielectric layer. A second etch is performed to thin the dielectric layer at the first opening, wherein the first and second etches are performed with a common mask in place. A silicide process is performed to form a silicide layer on the source line at the first opening, wherein the silicide process comprises a third etch with a second mask in place and extends the first opening through the dielectric layer. A via is formed extending through the EGL to the silicide layer.

Abstract: A memory device includes an active region, a select gate, a control gate, and a blocking layer. The active region includes a bottom portion and a protruding portion protruding from the bottom portion. A source is in the bottom portion and a drain is in the protruding portion. The select gate is above the bottom portion. A top surface of the select gate is lower than a top surface of the protruding portion. The control gate is above the bottom portion. The blocking layer is between the select gate and the control gate.

Abstract: The present disclosure relates to an integrated chip comprising a substrate having a first top surface disposed at a first height, a second top surface disposed at a second height that is less than the first height, and a connecting surface extending from the first top surface to the second top surface. A first source/drain region is disposed along the first top surface of the substrate. A second source/drain region is disposed along the second top surface of the substrate and is laterally separated from the first source/drain region by a channel region of the substrate. A gate structure is arranged between the first source/drain region and the second source/drain region. The gate structure extends from over the first top surface of the substrate to over the connecting surface of the substrate. The gate structure also extends below the first top surface of the substrate.

Abstract: A memory device and a manufacturing method are provided. The method includes: forming a first conductive pattern on a substrate; forming an active structure over the first conductive pattern, wherein the active structure comprises a gate pattern, a channel pillar and a charge storage layer, the channel pillar penetrates the gate pattern and electrically connects with the first conductive pattern, and the charge storage layer is disposed between the gate pattern and the channel pillar; forming a second conductive pattern over the active structure, wherein the second conductive pattern is electrically connected with the channel pillar; and performing formation of the active structure one more time, such that the channel pillars of the active structures are vertically spaced apart from each other, and electrically connected to the second conductive pattern extending in between the channel pillars.

Abstract: The present disclosure relates to an integrated chip comprising a substrate having a first top surface disposed at a first height, a second top surface disposed at a second height that is less than the first height, and a connecting surface extending from the first top surface to the second top surface. A first source/drain region is disposed along the first top surface of the substrate. A second source/drain region is disposed along the second top surface of the substrate and is laterally separated from the first source/drain region by a channel region of the substrate. A gate structure is arranged between the first source/drain region and the second source/drain region. The gate structure extends from over the first top surface of the substrate to over the connecting surface of the substrate. The gate structure also extends below the first top surface of the substrate.

Abstract: The present disclosure relates to an integrated chip comprising a substrate having a first top surface disposed at a first height, a second top surface disposed at a second height that is less than the first height, and a connecting surface extending from the first top surface to the second top surface. A first source/drain region is disposed along the first top surface of the substrate. A second source/drain region is disposed along the second top surface of the substrate and is laterally separated from the first source/drain region by a channel region of the substrate. A gate structure is arranged between the first source/drain region and the second source/drain region. The gate structure extends from over the first top surface of the substrate to over the connecting surface of the substrate. The gate structure also extends below the first top surface of the substrate.

Abstract: Various embodiments of the present disclosure are directed towards a method for opening a source line in a memory device. An erase gate line (EGL) and the source line are formed elongated in parallel. The source line underlies the EGL and is separated from the EGL by a dielectric layer. A first etch is performed to form a first opening through the EGL and stops on the dielectric layer. A second etch is performed to thin the dielectric layer at the first opening, wherein the first and second etches are performed with a common mask in place. A silicide process is performed to form a silicide layer on the source line at the first opening, wherein the silicide process comprises a third etch with a second mask in place and extends the first opening through the dielectric layer. A via is formed extending through the EGL to the silicide layer.

Abstract: Various embodiments of the present disclosure are directed towards a method for opening a source line in a memory device. An erase gate line (EGL) and the source line are formed elongated in parallel. The source line underlies the EGL and is separated from the EGL by a dielectric layer. A first etch is performed to form a first opening through the EGL and stops on the dielectric layer. A second etch is performed to thin the dielectric layer at the first opening, wherein the first and second etches are performed with a common mask in place. A silicide process is performed to form a silicide layer on the source line at the first opening, wherein the silicide process comprises a third etch with a second mask in place and extends the first opening through the dielectric layer. A via is formed extending through the EGL to the silicide layer.