Abstract: A method of forming double gate dielectric layers composed of an underlying oxide layer and an overlying oxy-nitride layer is provided to prevent degradation of gate dielectric properties due to plasma-induced charges. In the method, the oxide layer is thermally grown on a silicon substrate under oxygen gas atmosphere to have a first thickness, and then the oxy-nitride layer is thermally grown on the oxide layer under nitrogen monoxide gas atmosphere to have a second thickness smaller than the first thickness. The substrate may have a high voltage area and a low voltage area, and the oxide layer may be partially etched in the low voltage area so as to have a reduced thickness. The oxy-nitride layer behaves like a barrier, blocking the inflow of the plasma-induced charges.

Abstract: A method of forming double gate dielectric layers composed of an underlying oxide layer and an overlying oxy-nitride layer is provided to prevent degradation of gate dielectric properties due to plasma-induced charges. In the method, the oxide layer is thermally grown on a silicon substrate under oxygen gas atmosphere to have a first thickness, and then the oxy-nitride layer is thermally grown on the oxide layer under nitrogen monoxide gas atmosphere to have a second thickness smaller than the first thickness. The substrate may have a high voltage area and a low voltage area, and the oxide layer may be partially etched in the low voltage area so as to have a reduced thickness. The oxy-nitride layer behaves like a barrier, blocking the inflow of the plasma-induced charges.

Abstract: Disclosed herein is a rapid preparation process of aerogel. More specifically, the present invention relates to a rapid preparation process of aerogel which enables a considerable reduction in preparation time and preparation costs via simultaneous treatment of solvent exchange and surface-modification of hydrophilic-to-hydrophobic transition. The rapid preparation process comprises mixing a cation exchange resin with sodium silicate (water glass) as a starting material, and removing the sodium ion from the sodium silicate, to subject the sodium silicate to ion exchange; adding a base catalyst and an organosilane compound to the sodium silicate to subject the sodium silicate to gelation; aging the gellized silica gel at room temperature for 2 to 4 hours to discharge water from the silica gel and to modify the surface of the silica gel into hydrophobicity; and drying the hydrophobic silica gel at atmospheric pressure for 18 to 27 hours.

Abstract: A method for forming a metallic interconnect in a semiconductor device is disclosed. An example method forms an IDL on a substrate including predetermined devices, forms a via hole in the IDL, depositing a first metal diffusion preventive layer and a metal layer to form a via plug on the IDL, and performs a planarization process using the first metal diffusion preventive layer using as an etching stop layer. In addition, the example method forms a metallic interconnect on the first metal diffusion preventive layer, deposits the other metal diffusion preventive layer on the metallic interconnect, and etches a predetermined part of first and second metal diffusion preventive layers and the metallic interconnect using a mask pattern.

Abstract: A capacitor of a semiconductor device and a method of fabricating a capacitor in a semiconductor device are disclosed. The capacitor may include a bottom electrode formed on a semiconductor substrate, an insulation layer having different regions having different thicknesses, and a top electrode over a region of the insulation layer that has a relatively great thickness.