Patents by Inventor Yong-wan Jin
Yong-wan Jin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11929384Abstract: An image sensor may include a first photo-sensing device on a semiconductor substrate and configured to sense light of a first wavelength spectrum, and second and third photo-sensing devices integrated in the semiconductor substrate and configured to sense light of a second and third wavelength spectrum, respectively. The first photo-sensing device may overlap each of the second and third photo-sensing devices in a thickness direction of the semiconductor substrate. The second and third photo-sensing devices do not overlap in the thickness direction and each have an upper surface, a lower surface, and a doped region therebetween. The third photo-sensing device includes an upper surface deeper further from the upper surface of the semiconductor substrate than the upper surface of the second photo-sensing device and a doped region thicker than the doped region of the second photo-sensing device. The image sensor may omit the first photo-sensing device.Type: GrantFiled: March 20, 2023Date of Patent: March 12, 2024Assignee: Samsung Electronics Co., Ltd.Inventors: Kyung Bae Park, Yong Wan Jin, Sung Young Yun, Sung Jun Park, Feifei Fang, Chul Joon Heo
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Patent number: 11858911Abstract: A squarylium compound has high transmittance in a visible wavelength spectrum of light and is configured to selectively absorb light in an infrared/near infrared wavelength spectrum of light.Type: GrantFiled: February 17, 2022Date of Patent: January 2, 2024Assignee: Samsung Electronics Co., Ltd.Inventors: Moon Gyu Han, Kyung Bae Park, Dongseon Lee, Yong Wan Jin, Chul Joon Heo
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Patent number: 11839096Abstract: An organic sensor includes a first electrode, a second electrode, an organic active layer between the first electrode and the second electrode, and a protective layer between the organic active layer and the second electrode. Capacitance provided of the first electrode, the protective layer, and the second electrode is less than or equal to about 2×10?10 F.Type: GrantFiled: November 25, 2019Date of Patent: December 5, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Sung Young Yun, Sung Jun Park, Chul Joon Heo, Kyung Bae Park, Gae Hwang Lee, Yong Wan Jin
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Patent number: 11793072Abstract: A compound of Chemical Formula 1, and a photoelectric device, an image sensor, and an electronic device including the same are disclosed: In Chemical Formula 1, each substituent is the same as defined in the detailed description.Type: GrantFiled: January 5, 2023Date of Patent: October 17, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Jisoo Shin, Yeong Suk Choi, Katsunori Shibata, Taejin Choi, Sungyoung Yun, Ohkyu Kwon, Sangmo Kim, Hiromasa Shibuya, Gae Hwang Lee, Yong Wan Jin, Hyesung Choi, Chul Baik, Hyerim Hong
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Patent number: 11785789Abstract: An organic image sensor may be configured to obtain a color signal associated with a particular wavelength spectrum of light absorbed by the organic image sensor may omit a color filter. The organic image sensor may include an organic photoelectric conversion layer including a first material and a second material. The first material may absorb a first wavelength spectrum of light, and the second material may absorb a second wavelength spectrum of light. The organic photoelectric conversion layer may include stacked upper and lower layers, and the respective material compositions of the lower and upper layers may be first and second mixtures of the first and second materials. A ratio of the first material to the second material in the first mixture may be greater than 1/1, and a ratio of the first material to the second material in the second mixture may be less than 1/1.Type: GrantFiled: August 3, 2021Date of Patent: October 10, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Gae Hwang Lee, Kwang Hee Lee, Sung Young Yun, Dong-Seok Leem, Yong Wan Jin
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Publication number: 20230299115Abstract: An image sensor may include a first photo-sensing device on a semiconductor substrate and configured to sense light of a first wavelength spectrum, and second and third photo-sensing devices integrated in the semiconductor substrate and configured to sense light of a second and third wavelength spectrum, respectively. The first photo-sensing device may overlap each of the second and third photo-sensing devices in a thickness direction of the semiconductor substrate. The second and third photo-sensing devices do not overlap in the thickness direction and each have an upper surface, a lower surface, and a doped region therebetween. The third photo-sensing device includes an upper surface deeper further from the upper surface of the semiconductor substrate than the upper surface of the second photo-sensing device and a doped region thicker than the doped region of the second photo-sensing device. The image sensor may omit the first photo-sensing device.Type: ApplicationFiled: March 20, 2023Publication date: September 21, 2023Applicant: Samsung Electronics Co., Ltd.Inventors: Kyung Bae Park, Yong Wan Jin, Sung Young Yun, Sung Jun Park, Feifei Fang, Chul Joon Heo
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Patent number: 11716892Abstract: An OLED display panel may include a substrate, an OLED light emitter on the substrate and configured to emit light, and a visible light sensor on the substrate and configured to detect at least a portion of the emitted light based on reflection of the portion of the emitted light from a recognition target. The visible light sensor is in a non-light emitting region adjacent to the OLED light emitter so as to be horizontally aligned with the OLED light emitter in a horizontal direction extending parallel to an upper surface of the substrate, or between the substrate and a non-light emitting region adjacent to the OLED light emitter such that the visible light sensor is vertically aligned with the non-light emitting region in a vertical direction extending perpendicular to the upper surface of the substrate.Type: GrantFiled: April 12, 2021Date of Patent: August 1, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Kyung Bae Park, Sung Young Yun, Gae Hwang Lee, Yong Wan Jin, Chui Joon Heo
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Patent number: 11713952Abstract: Disclosed are an organic photoelectric device including a first electrode and a second electrode facing each other and a photoelectric conversion layer between the first electrode and the second electrode, wherein the photoelectric conversion layer includes a p-type semiconductor, an n-type semiconductor, and an n-type dopant represented by Chemical Formula 1, and an image sensor and an electronic device including the same. Definitions of Chemical Formula 1 are the same as defined in the detailed description.Type: GrantFiled: May 15, 2020Date of Patent: August 1, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Kyung Bae Park, Sung Jun Park, Hiromasa Shibuya, Sung Young Yun, Gae Hwang Lee, Yong Wan Jin, Chui Joon Heo
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Patent number: 11711930Abstract: A photoelectric device includes a first photoelectric conversion layer including a heterojunction that includes a first p-type semiconductor and a first n-type semiconductor, a second photoelectric conversion layer on the first photoelectric conversion layer and including a heterojunction that includes a second p-type semiconductor and a second n-type semiconductor. A peak absorption wavelength (?max1) of the first photoelectric conversion layer and a peak absorption wavelength (?max2) of the second photoelectric conversion layer are included in a common wavelength spectrum of light that is one wavelength spectrum of light of a red wavelength spectrum of light, a green wavelength spectrum of light, a blue wavelength spectrum of light, a near infrared wavelength spectrum of light, or an ultraviolet wavelength spectrum of light, and a light-absorption full width at half maximum (FWHM) of the second photoelectric conversion layer is narrower than an FWHM of the first photoelectric conversion layer.Type: GrantFiled: May 3, 2021Date of Patent: July 25, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Kyung Bae Park, Takkyun Ro, Kiyohiko Tsutsumi, Chul Joon Heo, Yong Wan Jin
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Patent number: 11690542Abstract: Disclosed is a non-invasive biometric sensor including a light source, an organic photodetector, and a detector. The light source is configured to irradiate light in a desired (and/or alternatively predetermined) wavelength range to a body part. The organic photodetector is configured to sense the light in the desired (and/or alternatively predetermined) wavelength range in response to the light in the desired (and/or alternatively predetermined) range being transmitted through the body part. The detector is configured to determine biomedical information of the body part based on an amount of the light sensed by the organic photodetector.Type: GrantFiled: August 28, 2020Date of Patent: July 4, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Chui Joon Heo, Kyung Bae Park, Takkyun Ro, Kwang Hee Lee, Dongseon Lee, Yong Wan Jin, Moon Gyu Han
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Patent number: 11683599Abstract: An image sensor may include a photoelectric device configured to selectively absorb light associated with a first color of three primary colors, a semiconductor substrate stacked with the photoelectric device and including first and second photo-sensing devices configured to sense light associated with second and third colors of the three primary colors, respectively, a first color filter corresponding to the first photo-sensing device and configured to selectively transmit light of the first wavelength spectrum, a second color filter corresponding to the second photo-sensing device and configured to selectively transmit light associated with a mixed color of the first color and the third color, and a first insulating layer between the photoelectric device and the semiconductor substrate and corresponding to the second photo-sensing device, and configured to selectively reflect light of a part of visible light.Type: GrantFiled: April 12, 2021Date of Patent: June 20, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Gae Hwang Lee, Kwang Hee Lee, Kyung Bae Park, Sung Young Yun, Dong-Seok Leem, Yong Wan Jin
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Patent number: 11683971Abstract: An OLED display panel may include a substrate, an OLED light emitter on the substrate and configured to emit light, and a visible light sensor on the substrate and configured to detect at least a portion of the emitted light based on reflection of the portion of the emitted light from a recognition target. The visible light sensor is in a non-light emitting region adjacent to the OLED light emitter so as to be horizontally aligned with the OLED light emitter in a horizontal direction extending parallel to an upper surface of the substrate, or between the substrate and a non-light emitting region adjacent to the OLED light emitter such that the visible light sensor is vertically aligned with the non-light emitting region in a vertical direction extending perpendicular to the upper surface of the substrate.Type: GrantFiled: April 12, 2021Date of Patent: June 20, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Kyung Bae Park, Sung Young Yun, Gae Hwang Lee, Yong Wan Jin, Chui Joon Heo
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Publication number: 20230157162Abstract: A compound of Chemical Formula 1, and a photoelectric device, an image sensor, and an electronic device including the same are disclosed: In Chemical Formula 1, each substituent is the same as defined in the detailed description.Type: ApplicationFiled: January 5, 2023Publication date: May 18, 2023Applicant: Samsung Electronics Co., Ltd.Inventors: Jisoo Shin, Yeong Suk Choi, Katsunori Shibata, Taejin Choi, Sungyoung Yun, Ohkyu Kwon, Sangmo Kim, Hiromasa Shibuya, Gae Hwang Lee, Yong Wan Jin, Hyesung Choi, Chul Baik, Hyerim Hong
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Patent number: 11641752Abstract: An organic photoelectronic device includes a first electrode and a second electrode facing each other and a light-absorption layer between the first electrode and the second electrode and including a first region closest to the first electrode, the first region having a first composition ratio (p1/n1) of a p-type semiconductor relative to an n-type semiconductor, a second region closest to the second electrode, the second region having a second composition ratio (p2/n2) of the p-type semiconductor relative to the n-type semiconductor, and a third region between the first region and the second region in a thickness direction, the third region having a third composition ratio (p3/n3) of the p-type semiconductor relative to the n-type semiconductor that is greater or less than the first composition ratio (p1/n1) and the second composition ratio (p2/n2).Type: GrantFiled: May 28, 2021Date of Patent: May 2, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Gae Hwang Lee, Sung Young Yun, Yong Wan Jin
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Patent number: 11625941Abstract: A fingerprint sensor may include first and second electrodes, a light absorption layer isolated from direct contact with the first and second electrodes, and an insulation layer between the first electrode and the light absorption layer and further between the second electrode and the light absorption layer. A reflective layer may be between the light absorption layer and the first electrode. The insulation layer may include a first insulation layer between the first electrode and the light absorption layer, and a second insulation layer between the second electrode and the light absorption layer. A fingerprint sensor array including a plurality of fingerprint sensors may at least partially expose a plurality of sub-pixels of a display panel on which the fingerprint sensor array is located.Type: GrantFiled: October 18, 2021Date of Patent: April 11, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Gae Hwang Lee, Kyung Bae Park, Sung Jun Park, Sung Young Yun, Yong Wan Jin, Chul Joon Heo
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Patent number: 11616092Abstract: An image sensor may include a first photo-sensing device on a semiconductor substrate and configured to sense light of a first wavelength spectrum, and second and third photo-sensing devices integrated in the semiconductor substrate and configured to sense light of a second and third wavelength spectrum, respectively. The first photo-sensing device may overlap each of the second and third photo-sensing devices in a thickness direction of the semiconductor substrate. The second and third photo-sensing devices do not overlap in the thickness direction and each have an upper surface, a lower surface, and a doped region therebetween. The third photo-sensing device includes an upper surface deeper further from the upper surface of the semiconductor substrate than the upper surface of the second photo-sensing device and a doped region thicker than the doped region of the second photo-sensing device. The image sensor may omit the first photo-sensing device.Type: GrantFiled: November 13, 2020Date of Patent: March 28, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Kyung Bae Park, Yong Wan Jin, Sung Young Yun, Sung Jun Park, Feifei Fang, Chui Joon Heo
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Publication number: 20230079198Abstract: A transparent conductive film includes a metal chalcogenide compound doped with a halogen and having a sheet resistance at room temperature of less than or equal to about 60 ohm/sq.Type: ApplicationFiled: August 29, 2022Publication date: March 16, 2023Applicants: Samsung Electronics Co., Ltd., RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITYInventors: Younhee LIM, Sangyeon PAK, Jiwon SON, Yong Wan JIN, SeungNam CHA, Kyungbae PARK, Chuljoon HEO
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Patent number: 11569451Abstract: A compound of Chemical Formula 1, and a photoelectric device, an image sensor, and an electronic device including the same are disclosed: In Chemical Formula 1, each substituent is the same as defined in the detailed description.Type: GrantFiled: September 15, 2021Date of Patent: January 31, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Jisoo Shin, Yeong Suk Choi, Katsunori Shibata, Taejin Choi, Sungyoung Yun, Ohkyu Kwon, Sangmo Kim, Hiromasa Shibuya, Gae Hwang Lee, Yong Wan Jin, Hyesung Choi, Chul Baik, Hyerim Hong
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Patent number: 11557741Abstract: A photoelectric conversion device includes a first electrode and a second electrode facing each other, a photoelectric conversion layer between the first electrode and the second electrode and configured to absorb light in at least one part of a wavelength spectrum of light and to convert it into an electric signal, and an organic auxiliary layer between the first electrode and the photoelectric conversion layer and having a higher charge mobility than a charge mobility of the photoelectric conversion layer. An organic sensor may include the photoelectric conversion device. An electronic device may include the organic sensor.Type: GrantFiled: July 23, 2019Date of Patent: January 17, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Chul Joon Heo, Kyung Bae Park, Hyun Bum Kang, Sung Jun Park, Jeong Il Park, Chul Baik, Ji Soo Shin, Sung Young Yun, Gae Hwang Lee, Don-Wook Lee, Eun Kyung Lee, Yong Wan Jin, Yeong Suk Choi, Taejin Choi
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Patent number: 11532671Abstract: An organic photoelectronic device includes a first electrode and a second electrode facing each other and a light-absorption layer between the first electrode and the second electrode and including a photoelectric conversion region including a p-type light-absorbing material and an n-type light-absorbing material and a doped region including an exciton quencher and at least one of the p-type light-absorbing material and the n-type light-absorbing material, wherein at least one of the p-type light-absorbing material and the n-type light-absorbing material selectively absorbs a part of visible light, and an image sensor includes the same.Type: GrantFiled: March 28, 2017Date of Patent: December 20, 2022Assignee: Samsung Electronics Co., Ltd.Inventors: Dong-Seok Leem, Kwang Hee Lee, Tadao Yagi, Sung Young Yun, Gae Hwang Lee, Seon-Jeong Lim, Yong Wan Jin