Abstract: An organic photoelectronic device includes a first electrode and a second electrode facing each other and a light-absorption layer between the first electrode and the second electrode and including a first region closest to the first electrode, the first region having a first composition ratio (p1/n1) of a p-type semiconductor relative to an n-type semiconductor, a second region closest to the second electrode, the second region having a second composition ratio (p2/n2) of the p-type semiconductor relative to the n-type semiconductor, and a third region between the first region and the second region in a thickness direction, the third region having a third composition ratio (p3/n3) of the p-type semiconductor relative to the n-type semiconductor that is greater or less than the first composition ratio (p1/n1) and the second composition ratio (p2/n2).

Abstract: A photodiode according to example embodiments includes an anode, a cathode, and an intrinsic layer between the anode and the cathode. The intrinsic layer includes a P-type semiconductor and an N-type semiconductor, and composition ratios of the P-type semiconductor and the N-type semiconductor vary within the intrinsic layer depending on a distance of the intrinsic layer from one of the anode and the cathode.

Abstract: A photoelectric device includes a first photoelectric conversion layer including a heterojunction that includes a first p-type semiconductor and a first n-type semiconductor, a second photoelectric conversion layer on the first photoelectric conversion layer and including a heterojunction that includes a second p-type semiconductor and a second n-type semiconductor. A peak absorption wavelength (?max1) of the first photoelectric conversion layer and a peak absorption wavelength (?max2) of the second photoelectric conversion layer are included in a common wavelength spectrum of light that is one wavelength spectrum of light of a red wavelength spectrum of light, a green wavelength spectrum of light, a blue wavelength spectrum of light, a near infrared wavelength spectrum of light, or an ultraviolet wavelength spectrum of light, and a light-absorption full width at half maximum (FWHM) of the second photoelectric conversion layer is narrower than an FWHM of the first photoelectric conversion layer.

Abstract: An organic image sensor may be configured to obtain a color signal associated with a particular wavelength spectrum of light absorbed by the organic image sensor may omit a color filter. The organic image sensor may include an organic photoelectric conversion layer including a first material and a second material. The first material may absorb a first wavelength spectrum of light, and the second material may absorb a second wavelength spectrum of light. The organic photoelectric conversion layer may include stacked upper and lower layers, and the respective material compositions of the lower and upper layers may be first and second mixtures of the first and second materials. A ratio of the first material to the second material in the first mixture may be greater than 1/1, and a ratio of the first material to the second material in the second mixture may be less than 1/1.

Abstract: An OLED display panel may include a substrate, an OLED light emitter on the substrate and configured to emit light, and a visible light sensor on the substrate and configured to detect at least a portion of the emitted light based on reflection of the portion of the emitted light from a recognition target. The visible light sensor is in a non-light emitting region adjacent to the OLED light emitter so as to be horizontally aligned with the OLED light emitter in a horizontal direction extending parallel to an upper surface of the substrate, or between the substrate and a non-light emitting region adjacent to the OLED light emitter such that the visible light sensor is vertically aligned with the non-light emitting region in a vertical direction extending perpendicular to the upper surface of the substrate.

Abstract: An image sensor may include a first photo-sensing device on a semiconductor substrate and configured to sense light of a first wavelength spectrum, and second and third photo-sensing devices integrated in the semiconductor substrate and configured to sense light of a second and third wavelength spectrum, respectively. The first photo-sensing device may overlap each of the second and third photo-sensing devices in a thickness direction of the semiconductor substrate. The second and third photo-sensing devices do not overlap in the thickness direction and each have an upper surface, a lower surface, and a doped region therebetween. The third photo-sensing device includes an upper surface deeper further from the upper surface of the semiconductor substrate than the upper surface of the second photo-sensing device and a doped region thicker than the doped region of the second photo-sensing device. The image sensor may omit the first photo-sensing device.

Abstract: A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and/or an electronic device including the same are disclosed: In Chemical Formula 1, each substituent is the same as defined in the detailed description.

Abstract: An image sensor may include a photoelectric device configured to selectively absorb light associated with a first color of three primary colors, a semiconductor substrate stacked with the photoelectric device and including first and second photo-sensing devices configured to sense light associated with second and third colors of the three primary colors, respectively, a first color filter corresponding to the first photo-sensing device and configured to selectively transmit light of the first wavelength spectrum, a second color filter corresponding to the second photo-sensing device and configured to selectively transmit light associated with a mixed color of the first color and the third color, and a first insulating layer between the photoelectric device and the semiconductor substrate and corresponding to the second photo-sensing device, and configured to selectively reflect light of a part of visible light.

Abstract: A combination sensor may include a first infrared light sensor and a second infrared light sensor. The first infrared light sensor may be configured to sense light in a first wavelength within an infrared wavelength spectrum. The second infrared light sensor may be configured to sense light in a second wavelength that is different from the first wavelength within the infrared wavelength spectrum. The first infrared light sensor and the second infrared light sensor may be stacked in relation to each other.

Abstract: An image sensor may include a photodiode within a semiconductor substrate and configured to sense light in an infrared wavelength spectrum of light, a photoelectric conversion device on the semiconductor substrate and configured to sense light in a visible wavelength spectrum of light, and a filtering element configured to selectively transmit at least a portion of the infrared wavelength spectrum of light and the visible wavelength spectrum of light. The filtering element may include a plurality of color filters on the photoelectric conversion device. The photoelectric conversion device may include a pair of electrodes facing each other and a photoelectric conversion layer between the pair of electrodes and configured to selectively absorb light in a visible wavelength spectrum of light. The filtering element may be between the semiconductor substrate and the photoelectric conversion device and may selectively absorb the infrared light and selectively transmit the visible light.

Abstract: A photoelectric conversion device may include one or more pixel electrodes and an opposed electrode and a photoelectric conversion layer between the one or more pixel electrodes and the opposed electrode. The photoelectric conversion layer may be configured to absorb light of at least one part in a wavelength spectrum and to convert the absorbed light into an electrical signal. Each pixel electrode has an upper surface facing the photoelectric conversion layer, a side surface, and a non-angulated edge where the upper surface and the side surface meet.

Abstract: An organic photoelectronic device includes a first electrode and a second electrode facing each other and a light-absorption layer between the first electrode and the second electrode and including a first region closest to the first electrode, the first region having a first composition ratio (p1/n1) of a p-type semiconductor relative to an n-type semiconductor, a second region closest to the second electrode, the second region having a second composition ratio (p2/n2) of the p-type semiconductor relative to the n-type semiconductor, and a third region between the first region and the second region in a thickness direction, the third region having a third composition ratio (p3/n3) of the p-type semiconductor relative to the n-type semiconductor that is greater or less than the first composition ratio (p1/n1) and the second composition ratio (p2/n2).

Abstract: A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same are disclosed: In Chemical Formula 1, each substituent is the same as described in the detailed description.

Abstract: An image sensor may include a photodiode within a semiconductor substrate and configured to sense light in an infrared wavelength spectrum of light, a photoelectric conversion device on the semiconductor substrate and configured to sense light in a visible wavelength spectrum of light, and a filtering element configured to selectively transmit at least a portion of the infrared wavelength spectrum of light and the visible wavelength spectrum of light. The filtering element may include a plurality of color filters on the photoelectric conversion device. The photoelectric conversion device may include a pair of electrodes facing each other and a photoelectric conversion layer between the pair of electrodes and configured to selectively absorb light in a visible wavelength spectrum of light. The filtering element may be between the semiconductor substrate and the photoelectric conversion device and may selectively absorb the infrared light and selectively transmit the visible light.

Abstract: An organic photoelectronic device includes a first electrode and a second electrode facing each other, and first and second photoelectronic conversion layers between the first electrode and the second electrode. The first and second photoelectronic conversion layers include a p-type semiconductor and an n-type semiconductor. The first photoelectronic conversion layer has a first composition ratio (p1/n1) of the p-type semiconductor relative to the n-type semiconductor, the second photoelectronic conversion layer has a second composition ratio (p2/n2) of the p-type semiconductor relative to the n-type semiconductor, and the first composition ratio (p1/n1) is greater than the second composition ratio (p2/n2).

Abstract: A photoelectric device includes a first photoelectric conversion layer including a heterojunction that includes a first p-type semiconductor and a first n-type semiconductor, a second photoelectric conversion layer on the first photoelectric conversion layer and including a heterojunction that includes a second p-type semiconductor and a second n-type semiconductor. A peak absorption wavelength (?max1) of the first photoelectric conversion layer and a peak absorption wavelength (?max2) of the second photoelectric conversion layer are included in a common wavelength spectrum of light that is one wavelength spectrum of light of a red wavelength spectrum of light, a green wavelength spectrum of light, a blue wavelength spectrum of light, a near infrared wavelength spectrum of light, or an ultraviolet wavelength spectrum of light, and a light-absorption full width at half maximum (FWHM) of the second photoelectric conversion layer is narrower than an FWHM of the first photoelectric conversion layer.

Abstract: A photoelectric conversion device includes a first electrode and a second electrode facing each other, a photoelectric conversion layer between the first electrode and the second electrode and configured to absorb light in at least one part of a wavelength spectrum of light and to convert it into an electric signal, and an inorganic nanolayer between the first electrode and the photoelectric conversion layer and including a lanthanide element, calcium (Ca), potassium (K), aluminum (Al), or an alloy thereof. An organic CMOS image sensor may include the photoelectric conversion device. An electronic device may include the organic CMOS image sensor.

Abstract: An image sensor may include a photoelectric device configured to selectively absorb light associated with a first color of three primary colors, a semiconductor substrate stacked with the photoelectric device and including first and second photo-sensing devices configured to sense light associated with second and third colors of the three primary colors, respectively, a first color filter corresponding to the first photo-sensing device and configured to selectively transmit light of the first wavelength spectrum, a second color filter corresponding to the second photo-sensing device and configured to selectively transmit light associated with a mixed color of the first color and the third color, and a first insulating layer between the photoelectric device and the semiconductor substrate and corresponding to the second photo-sensing device, and configured to selectively reflect light of a part of visible light.

Abstract: An OLED display panel may include a substrate, an OLED light emitter on the substrate and configured to emit light, and a visible light sensor on the substrate and configured to detect at least a portion of the emitted light based on reflection of the portion of the emitted light from a recognition target. The visible light sensor is in a non-light emitting region adjacent to the OLED light emitter so as to be horizontally aligned with the OLED light emitter in a horizontal direction extending parallel to an upper surface of the substrate, or between the substrate and a non-light emitting region adjacent to the OLED light emitter such that the visible light sensor is vertically aligned with the non-light emitting region in a vertical direction extending perpendicular to the upper surface of the substrate.

Abstract: A combination sensor may include a first infrared light sensor and a second infrared light sensor. The first infrared light sensor may be configured to sense light in a first wavelength within an infrared wavelength spectrum. The second infrared light sensor may be configured to sense light in a second wavelength that is different from the first wavelength within the infrared wavelength spectrum. The first infrared light sensor and the second infrared light sensor may be stacked in relation to each other.