Patents by Inventor Yong-wan Jin

Yong-wan Jin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170278896
    Abstract: Image sensors, and electronic devices including the image sensors, include a first photoelectronic device including at least one of a blue photoelectronic device sensing light in a blue wavelength region, a red photoelectronic device sensing light in a red wavelength region, and a green photoelectronic device sensing light in a green wavelength region, and a second photoelectronic device stacked on one side of the first photoelectronic device without being interposed by a color filter, wherein the second photoelectronic device senses light in an infrared region.
    Type: Application
    Filed: June 9, 2017
    Publication date: September 28, 2017
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Kyung Bae PARK, Yong Wan Jin, Moon Gyu Han
  • Patent number: 9761627
    Abstract: An image sensor includes a semiconductor substrate integrated with at least one first photo-sensing device configured to sense light in a blue wavelength region and at least one second photo-sensing device configured to sense light in a red wavelength region, a color filter layer on the semiconductor substrate and including a blue color filter configured to selectively absorb light in a blue wavelength region and a red color filter configured to selectively absorb light in a red wavelength region, and a third photo-sensing device on the color filter layer and including a pair of electrodes facing each other, and a photoactive layer between the pair of electrodes and configured to selectively absorb light in a green wavelength region.
    Type: Grant
    Filed: May 2, 2016
    Date of Patent: September 12, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yong Wan Jin, Kyu Sik Kim, Kyung Bae Park, Kwang Hee Lee, Dong-Seok Leem, Deukseok Chung
  • Publication number: 20170250227
    Abstract: Example embodiments relate to an organic photoelectronic device that includes a first electrode, a light-absorption layer on the first electrode and including a first p-type light-absorption material and a first n-type light-absorption material, a light-absorption auxiliary layer on the light-absorption layer and including a second p-type light-absorption material or a second n-type light-absorption material that have a smaller full width at half maximum (FWHM) than the FWHM of the light absorption layer, a charge auxiliary layer on the light-absorption auxiliary layer, and a second electrode on the charge auxiliary layer, and an image sensor including the same.
    Type: Application
    Filed: May 12, 2017
    Publication date: August 31, 2017
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Kyung Bae PARK, Satoh RYUICHI, Gae Hwang LEE, Kwang Hee LEE, Dong-Seok LEEM, Yong Wan JIN, Tadao YAGI, Chul Joon HEO
  • Patent number: 9748295
    Abstract: An electronic device may include at least one image sensor that includes a plurality of photo-sensing devices, a photoelectric device on one side of the semiconductor substrate and configured to selectively sense first visible light, and a plurality of color filters on separate photo-sensing devices. The plurality of color filters may include a first color filter configured to selectively transmit a second visible light that is different from the first visible light and a second color filter transmitting first mixed light including the second visible light. The electronic device may include multiple arrays of color filters. The electronic device may include different photoelectric devices on the separate arrays of color filters. The different photoelectric devices may be configured to sense different wavelength spectra of light.
    Type: Grant
    Filed: May 16, 2016
    Date of Patent: August 29, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kwang Hee Lee, Gae Hwang Lee, Sung Young Yun, Dong-Seok Leem, Xavier Bulliard, Yong Wan Jin
  • Patent number: 9728586
    Abstract: An organic photoelectronic device includes a first electrode having a plurality of nanopatterns arranged at a regular interval, a second electrode facing the first electrode and an active layer between the first electrode and the second electrode, the active layer absorbing light in at least one wavelength of a visible ray region.
    Type: Grant
    Filed: January 5, 2015
    Date of Patent: August 8, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Gae Hwang Lee, Kyung Bae Park, Sung Young Yun, Yong Wan Jin, Moon Gyu Han
  • Publication number: 20170213973
    Abstract: An organic photoelectric device includes a first electrode and a second electrode facing each other and a photoelectric conversion layer between the first electrode and the second electrode, wherein the photoelectric conversion layer includes a p-type semiconductor compound and an n-type semiconductor compound, and the organic photoelectric device satisfies Equation 1, and has external quantum efficiency (EQE) of greater than or equal to about 40% at ?3 V.
    Type: Application
    Filed: April 7, 2017
    Publication date: July 27, 2017
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Sung Young YUN, Gae Hwang LEE, Kwang Hee LEE, Dong-Seok LEEM, Yong Wan JIN, Tadao YAGI
  • Patent number: 9716120
    Abstract: An image sensor includes a semiconductor substrate integrated with at least one of a first photo-sensing device that may sense a first wavelength spectrum of visible light and a second photo-sensing device that may sense second wavelength spectrum of visible light, and a third photo-sensing device on the semiconductor substrate that may selectively sense third wavelength spectrum of visible light in a longer wavelength spectrum of visible light than the first wavelength spectrum of visible light and the second wavelength spectrum of visible light. The first photo-sensing device and the second photo-sensing device may overlap with each other in a thickness direction of the semiconductor substrate.
    Type: Grant
    Filed: October 3, 2016
    Date of Patent: July 25, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yong Wan Jin, Kwang Hee Lee, Gae Hwang Lee, Kyung Bae Park, Dong-Seok Leem, Yeong Suk Choi
  • Patent number: 9691823
    Abstract: Image sensors, and electronic devices including the image sensors, include a first photoelectronic device including at least one of a blue photoelectronic device sensing light in a blue wavelength region, a red photoelectronic device sensing light in a red wavelength region, and a green photoelectronic device sensing light in a green wavelength region, and a second photoelectronic device stacked on one side of the first photoelectronic device without being interposed by a color filter, wherein the second photoelectronic device senses light in an infrared region.
    Type: Grant
    Filed: January 14, 2015
    Date of Patent: June 27, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyung Bae Park, Yong Wan Jin, Moon Gyu Han
  • Publication number: 20170179179
    Abstract: An image sensor includes a semiconductor substrate integrated with at least one first photo-sensing device sensing light in a first wavelength region and at least one second photo-sensing device sensing light in a second wavelength region shorter than the first wavelength region, a photoelectric device including a pair of electrodes facing each other and a light absorption layer between the electrodes, the photoelectric device selectively absorbing light in a third wavelength region between the first wavelength region and the second wavelength region, and a nanostructural body between the semiconductor substrate and the photoelectric device, the nanostructural body including at least two parts having different optical paths.
    Type: Application
    Filed: March 3, 2017
    Publication date: June 22, 2017
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Gae Hwang LEE, Kyu Sik KIM, Yong Wan JIN
  • Patent number: 9673259
    Abstract: Example embodiments relate to an organic photoelectronic device that includes a first electrode, a light-absorption layer on the first electrode and including a first p-type light-absorption material and a first n-type light-absorption material, a light-absorption auxiliary layer on the light-absorption layer and including a second p-type light-absorption material or a second n-type light-absorption material that have a smaller full width at half maximum (FWHM) than the FWHM of the light absorption layer, a charge auxiliary layer on the light-absorption auxiliary layer, and a second electrode on the charge auxiliary layer, and an image sensor including the same.
    Type: Grant
    Filed: January 23, 2015
    Date of Patent: June 6, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyung Bae Park, Satoh Ryuichi, Gae Hwang Lee, Kwang Hee Lee, Dong-Seok Leem, Yong Wan Jin, Tadao Yagi, Chul Joon Heo
  • Publication number: 20170154911
    Abstract: An image sensor includes a semiconductor substrate including a plurality of photo-sensing devices, a photoelectric conversion device disposed on the semiconductor substrate and absorbing the mixed light of a first color and a second color, and a color filter disposed on one side of the photoelectric conversion device and configured to selectively transmit a mixed light including a third color, and an electronic device including the image sensor is provided.
    Type: Application
    Filed: July 6, 2016
    Publication date: June 1, 2017
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: YONG WAN JIN, Gae Hwang Lee, Seon-Jeong Lim, Sung Young Yun, Kwang Hee Lee
  • Publication number: 20170154929
    Abstract: An organic photoelectronic device includes a first electrode and a second electrode facing each other, photoelectronic conversion layer between the first electrode and the second electrode and including a first material and a second material providing a p-n junction and an interlayer being adjacent to the first electrode between the first electrode and the photoelectronic conversion layer and including a third material, wherein the first material and the third material are an organic material having each energy bandgap of about 1.7 eV to about 2.3 eV, and an image sensor including the same is provided.
    Type: Application
    Filed: October 26, 2016
    Publication date: June 1, 2017
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Dong-Seok LEEM, Seon-Jeong Lim, Kwang Hee Lee, Xavier Bulliard, Yong Wan Jin, Tadao Yagi
  • Patent number: 9666810
    Abstract: An organic photoelectric device includes a first electrode and a second electrode facing each other and a photoelectric conversion layer between the first electrode and the second electrode, wherein the photoelectric conversion layer includes a p-type semiconductor compound and an n-type semiconductor compound, and the organic photoelectric device satisfies Equation 1, and has external quantum efficiency (EQE) of greater than or equal to about 40% at ?3 V.
    Type: Grant
    Filed: April 9, 2015
    Date of Patent: May 30, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sung Young Yun, Gae Hwang Lee, Kwang Hee Lee, Dong-Seok Leem, Yong Wan Jin, Tadao Yagi
  • Publication number: 20170141149
    Abstract: An electronic device may include at least one image sensor that includes a plurality of photo-sensing devices, a photoelectric device on one side of the semiconductor substrate and configured to selectively sense first visible light, and a plurality of color filters on separate photo-sensing devices. The plurality of color filters may include a first color filter configured to selectively transmit a second visible light that is different from the first visible light and a second color filter transmitting first mixed light including the second visible light. The electronic device may include multiple arrays of color filters. The electronic device may include different photoelectric devices on the separate arrays of color filters. The different photoelectric devices may be configured to sense different wavelength spectra of light.
    Type: Application
    Filed: May 16, 2016
    Publication date: May 18, 2017
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Kwang Hee LEE, Gae Hwang Lee, Sung Young Yun, Dong-Seok Leem, Xavier Bulliard, Yong Wan Jin
  • Publication number: 20170141143
    Abstract: An image sensor includes a semiconductor substrate integrated with at least one of a first photo-sensing device that may sense a first wavelength spectrum of visible light and a second photo-sensing device that may sense second wavelength spectrum of visible light, and a third photo-sensing device on the semiconductor substrate that may selectively sense third wavelength spectrum of visible light in a longer wavelength spectrum of visible light than the first wavelength spectrum of visible light and the second wavelength spectrum of visible light. The first photo-sensing device and the second photo-sensing device may overlap with each other in a thickness direction of the semiconductor substrate.
    Type: Application
    Filed: October 3, 2016
    Publication date: May 18, 2017
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Yong Wan JIN, Kwang Hee LEE, Gae Hwang LEE, Kyung Bae PARK, Dong-Seok LEEM, Yeong Suk CHOI
  • Publication number: 20170125485
    Abstract: An image sensor including a semiconductor substrate integrated with a plurality of photo-sensing devices and a nanopattern layer on the semiconductor substrate, the nanopattern layer having a plurality of nanopatterns, wherein each nanopattern of the plurality of nanopatterns correspond one to one with a single photo-sensing device of the plurality of photo-sensing devices, respectively.
    Type: Application
    Filed: December 9, 2016
    Publication date: May 4, 2017
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Gae Hwang LEE, Kwang Hee Lee, Dong-Seok LEEM, Yong Wan JIN
  • Patent number: 9628734
    Abstract: A stacked image sensor includes a substrate including a first photoelectric conversion device, a second photoelectric conversion device and a first color signal storing device disposed between the first photoelectric conversion device and the second photoelectric conversion device. A second color filter and a third color filter are disposed at positions corresponding to the first photoelectric conversion device and the second photoelectric conversion device on the substrate. A conductive connecting member is disposed between the second color filter and the third color filter. A first color sensing photoelectric conversion device is disposed on the second color filter, the third color filter, and the conductive connecting member. The cross-sectional area of conductive connecting member is at least greater than the cross-sectional area of the first color signal storing device.
    Type: Grant
    Filed: March 17, 2015
    Date of Patent: April 18, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kyung Bae Park, Gae Hwang Lee, Kwang Hee Lee, Yong Wan Jin, Chul Joon Heo
  • Patent number: 9620657
    Abstract: An image sensor includes a semiconductor substrate integrated with at least one first photo-sensing device sensing light in a first wavelength region and at least one second photo-sensing device sensing light in a second wavelength region shorter than the first wavelength region, a photoelectric device including a pair of electrodes facing each other and a light absorption layer between the electrodes, the photoelectric device selectively absorbing light in a third wavelength region between the first wavelength region and the second wavelength region, and a nanostructural body between the semiconductor substrate and the photoelectric device, the nanostructural body including at least two parts having different optical paths.
    Type: Grant
    Filed: February 6, 2014
    Date of Patent: April 11, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Gae Hwang Lee, Kyu Sik Kim, Yong Wan Jin
  • Publication number: 20170094198
    Abstract: An electronic device includes a lens, an optical filter asymmetric to an optical axis of the lens, and an image sensor including a visible light image sensor and a non-visible light image sensor. The optical filter has an opening and is configured to transmit visible light and block at least one type of non-visible light. The visible light image sensor is configured to sense the visible light and the non-visible light image sensor is configured to sense the at least one type of non-visible light.
    Type: Application
    Filed: June 16, 2016
    Publication date: March 30, 2017
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Sung Young Yun, Gae Hwang LEE, Dong-Seok LEEM, Yong Wan JIN
  • Publication number: 20170092868
    Abstract: A compound for an organic photoelectric device is represented by Chemical Formula 1. An organic photoelectric device includes a first electrode and a second electrode facing each other, and an active layer including the compound represented by Chemical Formula 1 between the first electrode and the second electrode.
    Type: Application
    Filed: September 22, 2016
    Publication date: March 30, 2017
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: TADAO YAGI, Rie SAKURAI, Hyesung CHOI, Tatsuya IMASE, Hiromasa SHIBUYA, Sung Young YUN, Gae Hwang LEE, Kwang Hee LEE, Dong-Seok LEEM, Seon-Jeong LIM, Xavier BULLIARD, Yong Wan JIN, Yeong Suk CHOI, Moon Gyu HAN