Patents by Inventor Yong-wan Jin

Yong-wan Jin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170062726
    Abstract: A compound for an organic photoelectric device includes at least one of a compound represented by Chemical Formula 1, a compound represented by Chemical Formula 2 and a combination thereof.
    Type: Application
    Filed: September 1, 2016
    Publication date: March 2, 2017
    Applicants: Samsung Electronics Co., Ltd., UNIST Academy-Industry Research Corporation
    Inventors: Yeong Suk CHOI, Yong Wan JIN, Chang Duk YANG, Gyeongsik KIM, Yujin AHN
  • Publication number: 20170062747
    Abstract: An organic photoelectronic device includes an anode and a cathode facing each other, a light-absorption layer between the anode and the cathode, and a first auxiliary layer between the cathode and the light-absorption layer, the first auxiliary layer having an energy bandgap of about 3.0 eV to about 4.5 eV, and a difference between a work function of the cathode and a highest occupied molecular orbital (HOMO) energy level of the first auxiliary layer is about 1.5 eV to about 2.0 eV.
    Type: Application
    Filed: May 10, 2016
    Publication date: March 2, 2017
    Inventors: Dong-Seok LEEM, Sung Young YUN, Kwang Hee LEE, Sean-Jeong LIM, Yong Wan JIN
  • Publication number: 20170053958
    Abstract: An image sensor includes a first light detecting device configured to selectively sense or absorb first visible light, a second light detecting device configured to selectively sense or absorb second visible light having a longer wavelength region than the first visible light, and a third light detecting device on the first light detecting device and the second light detecting device. The first light detecting device has one of a maximum transmission wavelength and a maximum absorption wavelength less than about 440 nm, the second light detecting device has one of a maximum transmission wavelength and a maximum absorption wavelength greater than about 630 nm, and the third light detecting device is configured to selectively sense or absorb third visible light having a wavelength region between the first visible light and the second visible light.
    Type: Application
    Filed: May 20, 2016
    Publication date: February 23, 2017
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Gae Hwang LEE, Seon-Jeong LIM, Yong Wan JIN
  • Publication number: 20170040544
    Abstract: An organic photoelectronic device includes a first electrode and a second electrode facing each other, and an active layer between the first electrode and the second electrode, the active layer including a first compound having a maximum absorption wavelength of about 500 nm to about 600 nm in a visible ray region and a transparent second compound in a visible ray region. The transparent second compound has an absorption coefficient in a thin film state of less than or equal to about 0.1×105 cm?1 in a wavelength region of about 450 nm to about 700 nm.
    Type: Application
    Filed: October 17, 2016
    Publication date: February 9, 2017
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Kwang Hee LEE, Gae Hwang LEE, Dong-Seok LEEM, Tadao YAGI, Xavier BULLIARD, Yong Wan JIN, Kyung Bae PARK, Sungdong SUH
  • Publication number: 20170037309
    Abstract: Disclosed herein is a quantum dot phosphor for light emitting diodes, which includes quantum dots and a solid substrate on which the quantum dots are supported. Also, a method of preparing the quantum dot phosphor is provided. Since the quantum dot phosphor of the current invention is composed of the quantum dots supported on the solid substrate, the quantum dots do not aggregate when dispensing a paste obtained by mixing the quantum dots with a paste resin for use in packaging of a light emitting diode. Thereby, a light emitting diode able to maintain excellent light emitting efficiency can be manufactured.
    Type: Application
    Filed: October 21, 2016
    Publication date: February 9, 2017
    Inventors: Eun Joo JANG, Mi Yang KIM, Hyung Kun KIM, Shin Ae JUN, Yong Wan JIN, Seong Jae CHOI
  • Patent number: 9548337
    Abstract: An image sensor including a semiconductor substrate integrated with a plurality of photo-sensing devices and a nanopattern layer on the semiconductor substrate, the nanopattern layer having a plurality of nanopatterns, wherein a single nanopattern of the plurality of nanopatterns corresponds to a single photo-sensing device in the plurality of photo-sensing devices.
    Type: Grant
    Filed: February 25, 2015
    Date of Patent: January 17, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Gae Hwang Lee, Kwang Hee Lee, Dong-Seok Leem, Yong Wan Jin
  • Patent number: 9548463
    Abstract: Example embodiments relate to an organic photoelectronic device including a first electrode and a second electrode facing each other, and an active layer between the first electrode and the second electrode, wherein the active layer includes a first compound represented by the following Chemical Formula 1, and an image sensor including the organic photoelectronic device.
    Type: Grant
    Filed: December 31, 2014
    Date of Patent: January 17, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Tadao Yagi, Rie Sakurai, Kyung-bae Park, Sung Young Yun, Gae Hwang Lee, Kwang Hee Lee, Dong-Seok Leem, Xavier Bulliard, Chul Joon Heo, Yong Wan Jin
  • Patent number: 9543361
    Abstract: An organic photoelectronic device includes a first electrode and a second electrode facing each other, and an active layer between the first electrode and the second electrode, the active layer including a heterojunction of a p-type semiconductor and an n-type semiconductor, the p-type semiconductor including a compound represented by Chemical Formula 1.
    Type: Grant
    Filed: March 12, 2015
    Date of Patent: January 10, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dong-Seok Leem, Kwang Hee Lee, Sung Young Yun, Gae Hwang Lee, Xavier Bulliard, Yong Wan Jin
  • Publication number: 20170005142
    Abstract: An organic photoelectronic device includes a first electrode and a second electrode facing each other and a light-absorption layer between the first electrode and the second electrode and including a first region closest to the first electrode, the first region having a first composition ratio (p1/n1) of a p-type semiconductor relative to an n-type semiconductor, a second region closest to the second electrode, the second region having a second composition ratio (p2/n2) of the p-type semiconductor relative to the n-type semiconductor, and a third region between the first region and the second region in a thickness direction, the third region having a third composition ratio (p3/n3) of the p-type semiconductor relative to the n-type semiconductor that is greater or less than the first composition ratio (p1/n1) and the second composition ratio (p2/n2).
    Type: Application
    Filed: May 17, 2016
    Publication date: January 5, 2017
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Gae Hwang LEE, Sung Young YUN, Yong Wan JIN
  • Publication number: 20160380222
    Abstract: An organic electronic device includes an organic device including an organic material, a first protective film on the organic device, a second protective film on the first protective film and including a same material as the first protective film, and a third protective film on the second protective film.
    Type: Application
    Filed: December 18, 2015
    Publication date: December 29, 2016
    Inventors: Ryuichi SATOH, Kyusik KIM, Kyung Bae PARK, Yong Wan JIN, Chuljoon HEO
  • Publication number: 20160380032
    Abstract: An image sensor includes at least one first pixel configured to sense light in a visible light wavelength spectrum and a second pixel configured to sense light in an infrared light wavelength spectrum. The second pixel includes a first photoelectric device defined in the second pixel. The first photoelectric device includes an infrared light absorption layer between a first electrode and a second electrode and configured to selectively absorb light in an infrared spectrum. The second pixel may be configured to compensate the luminance sensitivity of the image sensor. The first and second pixels may be included in a unit pixel group. The image sensor may include an array of multiple unit pixel groups arranged in one or more rows and one or more columns.
    Type: Application
    Filed: May 3, 2016
    Publication date: December 29, 2016
    Inventors: Kyung Bae PARK, Yong Wan JIN, Moon Gyu HAN
  • Patent number: 9515126
    Abstract: A photoelectric conversion device of an image sensor includes a first transparent electrode layer, an active layer, and a second transparent electrode layer, which are sequentially stacked. A light having a wavelength of about 440 nm-480 nm is absorbed within a depth of about ? of an entire thickness of the active layer from both the top and bottom surfaces of the active layer.
    Type: Grant
    Filed: March 13, 2015
    Date of Patent: December 6, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Gae Hwang Lee, Kwang Hee Lee, Kyung Bae Park, Sung Young Yun, Yong Wan Jin, Chul Joon Heo
  • Patent number: 9502473
    Abstract: An organic photoelectronic device includes a first electrode and a second electrode facing each other, and an active layer between the first electrode and the second electrode, the active layer including a first compound having a maximum absorption wavelength of about 500 nm to about 600 nm in a visible ray region and a transparent second compound in a visible ray region.
    Type: Grant
    Filed: March 26, 2015
    Date of Patent: November 22, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kwang Hee Lee, Gae Hwang Lee, Dong-Seok Leem, Tadao Yagi, Xavier Bulliard, Yong Wan Jin, Kyung Bae Park, Sungdong Suh
  • Patent number: 9490442
    Abstract: An organic photoelectronic device includes an anode and a cathode facing each other, and an organic layer between the anode and the cathode, the organic layer including a compound represented by Chemical Formula 1 as a visible light-absorbing body, and at least one of a hole buffer material having an energy bandgap of greater than or equal to about 2.8 eV and a HOMO level between a work function of the anode and a HOMO level of the compound represented by the Chemical Formula 1, and an electron buffer material having an energy bandgap of greater than or equal to about 2.8 eV and a LUMO level between a work function of the cathode and a LUMO level of the compound represented by the Chemical Formula 1.
    Type: Grant
    Filed: November 4, 2014
    Date of Patent: November 8, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dong-Seok Leem, Kwang Hee Lee, Gae Hwang Lee, Yong Wan Jin
  • Patent number: 9475984
    Abstract: Disclosed herein is a quantum dot phosphor for light emitting diodes, which includes quantum dots and a solid substrate on which the quantum dots are supported. Also, a method of preparing the quantum dot phosphor is provided. Since the quantum dot phosphor of the current invention is composed of the quantum dots supported on the solid substrate, the quantum dots do not aggregate when dispensing a paste obtained by mixing the quantum dots with a paste resin for use in packaging of a light emitting diode. Thereby, a light emitting diode able to maintain excellent light emitting efficiency can be manufactured.
    Type: Grant
    Filed: February 14, 2014
    Date of Patent: October 25, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Eun Joo Jang, Mi Yang Kim, Hyung Kun Kim, Shin Ae Jun, Yong Wan Jin, Seong Jae Choi
  • Publication number: 20160301013
    Abstract: An organic photoelectric device includes a first electrode and a second electrode facing each other, and an active layer between the first electrode and the second electrode, the active layer including an n-type semiconductor compound represented by Chemical Formula 1 and a p-type semiconductor compound having selective light absorption in a green wavelength region of about 500 nm to about 600 nm.
    Type: Application
    Filed: January 27, 2016
    Publication date: October 13, 2016
    Inventors: SAKURAI RIE, Yong Wan Jin, Sung Young Yun, Gae Hwang Lee, Kwang Hee Lee, Dong-Seok Leem, Bulliard Xavier, Tadao Yagi
  • Patent number: 9455302
    Abstract: Example embodiments relate to an image sensor that includes a semiconductor substrate integrated with at least one photo-sensing device, an impurity-doped first light-transmitting electrode present in the semiconductor substrate, an organic photoelectric conversion layer positioned on one side of the semiconductor substrate and absorbing light in a different wavelength from the wavelength sensed by the photo-sensing device, and a second light-transmitting electrode positioned on one side of the organic photoelectric conversion layer, and an electronic device including the same.
    Type: Grant
    Filed: December 29, 2014
    Date of Patent: September 27, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kwang-hee Lee, Kyung Bae Park, Gae Hwang Lee, Dong-Seok Leem, Yong Wan Jin
  • Publication number: 20160247852
    Abstract: An image sensor includes a semiconductor substrate integrated with at least one first photo-sensing device configured to sense light in a blue wavelength region and at least one second photo-sensing device configured to sense light in a red wavelength region, a color filter layer on the semiconductor substrate and including a blue color filter configured to selectively absorb light in a blue wavelength region and a red color filter configured to selectively absorb light in a red wavelength region, and a third photo-sensing device on the color filter layer and including a pair of electrodes facing each other, and a photoactive layer between the pair of electrodes and configured to selectively absorb light in a green wavelength region.
    Type: Application
    Filed: May 2, 2016
    Publication date: August 25, 2016
    Inventors: Yong Wan JIN, Kyu Sik KIM, Kyung Bae PARK, Kwang Hee LEE, Dong-Seok LEEM, Deukseok CHUNG
  • Patent number: 9417362
    Abstract: According to example embodiments, a reflective film includes a plurality of first concave-convex elements having a curved surface and a plurality of second concave-convex elements on the curved surface. The second concave-convex elements may be a smaller scale than a scale of the plurality of first concave-convex elements. The reflective structure may further include a color purity control element configured to reduce degradation of a color purity expressed by the reflective film. The color purity control element may be configured such that at least a complementary light with respect to a color light reflected by the reflective film travels in the same direction as the reflected color light.
    Type: Grant
    Filed: January 3, 2012
    Date of Patent: August 16, 2016
    Assignees: SAMSUNG ELECTRONICS CO., LTD., KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Moon-Gyu Han, Yong-Wan Jin, Jung H. Shin, Kyung-Jae Chung
  • Publication number: 20160225827
    Abstract: Provided is a pixel of a multi-stacked complementary metal-oxide semiconductor (CMOS) image sensor and a method of manufacturing the image sensor including a light-receiving unit that may include first through third photodiode layers that are sequentially stacked, an integrated circuit (IC) that is formed below the light-receiving unit, electrode layers that are formed on and below each of the first through third photodiode layers, and a contact plug that connects the electrode layer formed below each of the first through third photodiode layers with a transistor of the IC.
    Type: Application
    Filed: February 1, 2016
    Publication date: August 4, 2016
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Kyung-bae PARK, Kyu-sik KIM, Yong-wan JIN, Woong CHOI, Kwang-hee LEE, Do-hwan KIM