Abstract: A field emission device and its method of manufacture includes: a substrate; a plurality of cathode electrodes formed on the substrate and having slot shaped cathode holes to expose the substrate; emitters formed on the substrate exposed through each of the cathode holes and separated from both side surfaces of the cathode holes, the emitters being formed along a lengthwise direction of the cathode holes; an insulating layer formed on the substrate to cover the cathode electrodes and having insulating layer holes communicating with the cathode holes; and a plurality of gate electrodes formed on the insulating layer and having gate holes communicating with the insulating layer holes.

Abstract: Provided is an anode panel of a field emission type backlight unit. The anode panel includes a substrate, an anode formed on a lower surface of the substrate, a phosphor layer coated on a lower surface of the anode and a liquid pack disposed on an upper surface of the substrate, said liquid pack having a transparent cover having cylindrical lens type curved portions and transparent liquid filling in the curved portions.

Abstract: A nanowire electronmechanical device with an improved structure and a method of fabricating the same prevent burning of two nanowires which are switched due to contact with each other while providing stable on-off switching characteristics.

Abstract: A field emission display device and a field emission type backlight device having a sealing structure for a vacuum exhaust are provided. The field emission display device is constructed with a cathode substrate and an anode substrate attached to each other and facing each other and a vacuum-exhausted panel space formed therebetween to generated a visual image. Also, the field emission display device is constructed with a sealing member disposed along edges of the cathode substrate and the anode substrate to seal the panel space. At least one inlet exposed to the panel space and an exhaust passage through which the inlet communicates with an outside of the field emission display device are formed in the sealing member. The field emission display device and the field emission type backlight device according to the present invention has a reduced number of manufacturing processes and is suitable for a compact, slim and lightweight design, and a large screen by having the sealing structure for the vacuum exhaust.

Abstract: Example embodiments include an RFID display pixel, and a display panel and a display apparatus using the RFID display pixel. The RFID display pixel includes an RFID tag having an antenna and an IC chip; and a display device connected to the RFID tag. The display device is driven according to information received from the antenna. The display apparatus includes a display panel having a two-dimensional array of a plurality of RFID display pixels having the RFID tag and display device. An image control unit generates an image signal to be displayed on the display panel and an RFID reading unit wirelessly communicates with the RFID tag and transmits the image signal generated in the image control unit to the RFID tag.

Abstract: A method of forming a carbon nanotube emitter includes: forming a carbon nanotube composite on a substrate with a predetermined shape, coating surface treating material in a liquid phase on the carbon nanotube composite and drying the surface treating material, and peeling the dried surface treating material off of the carbon nanotube composite.

Abstract: A display apparatus includes an active transflective device and a device panel. The active transflective device is configured to electrically control light transmissivity and light reflectivity. The display panel is configured to form an image by modulating at least one of light reflected and light transmitted by the active transflective device.

Abstract: A carbon nanotube emitter and its fabrication method, a Field Emission Device (FED) using the carbon nanotube emitter and its fabrication method include a carbon nanotube emitter having a plurality of first carbon nanotubes arranged on a substrate and in parallel with the substrate, and a plurality of the second carbon nanotubes arranged on a surface of the first carbon nanotubes.

Abstract: A fibril solar cell includes: a fiber-shaped inner core having a porous fiber composed of first carbon nanotubes and a cathode material, in which pores of the porous fiber are filled with second carbon nanotubes, titanium dioxide, a photosensitive dye, and an electron transfer electrolyte; a photoconductive layer formed on a surface of the fiber-shaped inner core and composed of at least one photoconductive polymer; a transparent electrode layer formed on a surface of the photoconductive layer; and a transparent protective layer formed on a surface of the transparent electrode layer and composed of at least one transparent polymer. The fibril solar cell can be mass-produced inexpensively using a polymer. Also, the fibril solar cell has a high efficiency and can be converted into various shapes. The fibril solar cell can be attached to clothing, and be used as a portable power source for mobile electronics.

Abstract: A mask used for a Lithographie, Galvanofomung, and Abformung (LIGA) process, a method for manufacturing the mask, and a method for manufacturing a microstructure using a LIGA process.

Abstract: A memory device that performs writing and reading operations using a mechanical movement of a nanowire, and a method of manufacturing the memory device are provided. The memory device includes a source electrode, a drain electrode, and a gate electrode, each of which is formed on an insulating substrate. A nanowire capacitor is formed on the source electrode. The nanowire capacitor includes a first nanowire vertically grown from the source electrode, a dielectric layer formed on the outer surface of the first nanowire, and a floating electrode formed on the outer surface of the dielectric layer. A second nanowire is vertically grown on the drain electrode. The drain electrode is arranged between the source electrode and the gate electrode. The second nanowire is elastically deformed and contacts the nanowire capacitor when a drain voltage is applied to the drain electrode, and polarity of the drain voltage is opposite to polarity of a source voltage that is applied to the source electrode.

Abstract: Provided is a method of growing carbon nanotubes (CNTs) by forming a catalyst layer that is used to facilitate growth of CNTs to have a multi-layer structure; and injecting a carbon-containing gas to the catalyst layer to grow CNTs, and light emitting devices fabricated by incorporating the CNTs grown.

Abstract: A method of manufacturing a carbon nanotube field emission device whereby a catalyst layer is formed on a base structure, a solution containing a carbon nanotube powder is coated on the catalyst layer, and an electroless deposition solution is coated on the carbon nanotube coating layer. The method can provide a carbon nanotube field emission device having an improved field emission efficiency and increased lifetime.

Abstract: A carbon nanotube emitter and its fabrication method, a Field Emission Device (FED) using the carbon nanotube emitter and its fabrication method include a carbon nanotube emitter having a plurality of first carbon nanotubes arranged on a substrate and in parallel with the substrate, and a plurality of the second carbon nanotubes arranged on a surface of the first carbon nanotubes.

Abstract: A carbon nanotube composite includes a carbon nanotube and a conjugated polymer. The carbon nanotube composite has a liquid crystalline property and a thin film prepared by rubbing-treating a solution of the carbon nanotube composite has a good alignment property and thus can be used in manufacturing carbon nanotube (CNT) thin film transistors (TFTs).

Abstract: In a transistor and a method of manufacturing the same, the transistor includes a channel layer arranged on a substrate, a source electrode and a drain electrode formed on the substrate so as to contact respective ends of the channel layer, a gate insulating layer surrounding the channel layer between the source electrode and the drain electrode, and a gate electrode surrounding the gate insulating layer.

Abstract: Provided are an electron multiplier electrode using a secondary electron extraction electrode and a terahertz radiation source using the electron multiplier electrode. The electron multiplier electrode includes: a cathode; an emitter disposed on the cathode and extracting electron beams; a gate electrode for switching the electron beams, the gate electrode being disposed on the cathode to surround the emitter; and a secondary electron extraction electrode disposed on the gate electrode and including a secondary electron extraction layer extracting secondary electrons due to collision of the electron beams.

Abstract: Provided is an anode panel of a field emission type backlight unit. The anode panel includes a substrate, an anode formed on a lower surface of the substrate, a phosphor layer coated on a lower surface of the anode and a liquid pack disposed on an upper surface of the substrate, said liquid pack having a transparent cover having cylindrical lens type curved portions and transparent liquid filling in the curved portions.

Abstract: A mask used for a Lithographie, Galvanofomung, and Abformung (LIGA) process, a method for manufacturing the mask, and a method for manufacturing a microstructure using a LIGA process.

Abstract: A transistor includes: a semiconductor substrate; a channel region arranged on the semiconductor substrate; a source and a drain respectively arranged on either side of the channel region; and a conductive nano tube gate arranged on the semiconductor substrate to transverse the channel region between the source and the drain. Its method of manufacture includes: arranging a conductive nano tube on a surface of a semiconductor substrate; defining source and drain regions having predetermined sizes and traversing the nano tube; forming a metal layer on the source and drain regions; removing a portion of the metal layer formed on the nano tube to respectively form source and drain electrodes separated from the metal layer on either side of the nano tube; and doping a channel region below the nano tube arranged between the source and drain electrodes by ion-implanting.