Abstract: A method of manufacturing an organic semiconductor thin film includes coating an organic semiconductor solution on a substrate, and shearing the organic semiconductor solution in a direction that results in a shearing stress being applied to the organic semiconductor solution to form the organic semiconductor thin film, wherein a speed of the shearing is controlled such that an intermolecular distance of the organic semiconductor solution is adjusted.

Abstract: An example embodiment relates to a method of manufacturing an array of electric devices that includes attaching a platform including a micro-channel structure to a substrate. The method includes injecting first and second solutions into the micro-channel structure to form at least three liquid film columns, where the first and second solutions include different solvent composition ratios and the liquid columns each, respectfully, include different solvent composition ratios. The method further includes detaching the platform the substrate, removing solvent from the liquid film columns to form thin film columns, and treating the thin film columns under different conditions along a length direction of the thin film columns. The solvent is removed from the thin film columns and the thin film columns are treated under different conditions along a length direction of the thin film columns.

Abstract: A polymer dispersed display apparatus includes a polymer layer, and a plurality of liquid crystal drops dispersed in the polymer layer. Quantum dots emitting a plurality of colors of light are mixed in the liquid crystal drops. Therefore, the polymer dispersed display apparatus displays colors without the need for a color filter. Thus, the polymer dispersed display apparatus need not include a polarization plate and a color filter, so that a light usage efficiency of the polymer dispersed display apparatus increases.

Abstract: Disclosed herein is a quantum dot phosphor for light emitting diodes, which includes quantum dots and a solid substrate on which the quantum dots are supported. Also, a method of preparing the quantum dot phosphor is provided. Since the quantum dot phosphor of the current invention is composed of the quantum dots supported on the solid substrate, the quantum dots do not aggregate when dispensing a paste obtained by mixing the quantum dots with a paste resin for use in packaging of a light emitting diode. Thereby, a light emitting diode able to maintain excellent light emitting efficiency can be manufactured.

Abstract: Disclosed herein is a quantum dot phosphor for light emitting diodes, which includes quantum dots and a solid substrate on which the quantum dots are supported. Also, a method of preparing the quantum dot phosphor is provided. Since the quantum dot phosphor of the current invention is composed of the quantum dots supported on the solid substrate, the quantum dots do not aggregate when dispensing a paste obtained by mixing the quantum dots with a paste resin for use in packaging of a light emitting diode. Thereby, a light emitting diode able to maintain excellent light emitting efficiency can be manufactured.

Abstract: A method of manufacturing an active matrix electrochromic device includes preparing a first substrate including a thin film transistor including a gate electrode, a source electrode, and a drain electrode, and a pixel electrode electrically connected to the drain electrode. An electrochromic layer is formed on the pixel electrode by an electrophoretic process which includes immersing the first substrate and a mesh spaced apart from each other in a solution. While the first substrate is immersed in the solution so that the pixel electrode is soaked therein, a channel of the thin film transistor is opened by applying a voltage to the gate electrode, a potential difference between the pixel electrode and the mesh is generated by connecting a voltage source between a terminal electrically connected to the source electrode and the mesh, and materials in the solution are deposited on the pixel electrode, thereby forming the electrochromic semiconductor layer.

Abstract: An organic photoelectric material may include a compound represented by the above Chemical Formula 1, and an organic photoelectric device and an image sensor including the organic photoelectric material.

Abstract: An example embodiment of the image sensor includes a light-sensing device including a first electrode, a second electrode disposed opposite to the first electrode, and a photoelectric conversion layer positioned between the first electrode and the second electrode. The photoelectric conversion layer includes a block copolymer including electron donating blocks and electron accepting blocks. The electron donating blocks are deposited together and connected to the first electrode and the second electrode. The electron accepting blocks are deposited together and connected to the first electrode and the second electrode. A color filter may be positioned on the second electrode of the light-sensing device.

Abstract: A printing apparatus includes a first nozzle substrate having a first tapered nozzle unit aligned with a pressure chamber and a second nozzle substrate having a second tapered nozzle unit aligned with the first tapered nozzle unit and attached to the bottom of the first nozzle substrate.

Abstract: A photodiode according to example embodiments includes an anode, a cathode, and an intrinsic layer between the anode and the cathode. The intrinsic layer includes a P-type semiconductor and an N-type semiconductor, and composition ratios of the P-type semiconductor and the N-type semiconductor vary within the intrinsic layer depending on a distance of the intrinsic layer from one of the anode and the cathode.

Abstract: A printing apparatus includes: a flow channel plate including, a pressure chamber, a nozzle including an outlet through which ink contained in the pressure chamber is ejected, and a trench disposed around the nozzle, and the outlet extending into the trench; a piezoelectric actuator configured to provide a change in pressure to eject the ink contained in the pressure chamber; and an electrostatic actuator configured to provide an electrostatic driving force to the ink contained in the nozzle.

Abstract: An example embodiment relates to a method of manufacturing an array of electric devices that includes attaching a platform including a micro-channel structure to a substrate. The method includes injecting first and second solutions into the micro-channel structure to form at least three liquid film columns, where the first and second solutions include different solvent composition ratios and the liquid columns each, respectfully, include different solvent composition ratios. The method further includes detaching the platform the substrate, removing solvent from the liquid film columns to form thin film columns, and treating the thin film columns under different conditions along a length direction of the thin film columns. The solvent is removed from the thin film columns and the thin film columns are treated under different conditions along a length direction of the thin film columns.

Abstract: A memory device includes a lower electrode formed on a substrate, and an information storage unit formed on the lower electrode. The information storage unit includes a plurality of information storage layers spaced apart from one another. Each of the plurality of information storage layers is an information unit. A method of manufacturing a memory device uses a porous film to form the plurality of information storage layers.

Abstract: An example embodiment of the image sensor includes a light-sensing device including a first electrode, a second electrode disposed opposite to the first electrode, and a photoelectric conversion layer positioned between the first electrode and the second electrode. The photoelectric conversion layer includes a block copolymer including electron donating blocks and electron accepting blocks. The electron donating blocks are deposited together and connected to the first electrode and the second electrode. The electron accepting blocks are deposited together and connected to the first electrode and the second electrode. A color filter may be positioned on the second electrode of the light-sensing device.

Abstract: An example embodiment relates to a semiconductor device including a semiconductor element. The semiconductor element may include a plurality of unit layers spaced apart from each other in a vertical direction. Each unit layer may include a patterned graphene layer. The patterned graphene layer may be a layer patterned in a nanoscale. The patterned graphene layer may have a nanomesh or nanoribbon structure. The semiconductor device may be a transistor or a diode. An example embodiment relates to a method of making a semiconductor device including a semiconductor element.

Abstract: A reflective display device may include pixels. Each pixel may include sub-pixels. Each sub-pixel may include first and second substrates spaced apart from each other; a driving unit formed on a top surface of the first substrate; a reflective layer, acting as a first electrode to which a voltage is applied by the driving unit, disposed above the driving unit; a second electrode formed on a bottom surface of the second substrate; a color filter layer disposed between the reflective layer and the second electrode; and a polymer dispersed liquid crystal (PDLC) layer. If the color filter layer is formed on the reflective layer; then the PDLC layer may be disposed between the second electrode and color filter layer. If the color filter layer is formed on a bottom surface of the second electrode, then the PDLC layer may be disposed between the reflective layer and color filter layer.

Abstract: Provided is a pixel of a multi-stacked complementary metal-oxide semiconductor (CMOS) image sensor and a method of manufacturing the image sensor including a light-receiving unit that may include first through third photodiode layers that are sequentially stacked, an integrated circuit (IC) that is formed below the light-receiving unit, electrode layers that are formed on and below each of the first through third photodiode layers, and a contact plug that connects the electrode layer formed below each of the first through third photodiode layers with a transistor of the IC.

Abstract: An organic semiconductor device includes an organic semiconductor, an electrode electrically connected to the organic semiconductor, and a self-assembled monolayer positioned between the organic semiconductor and the electrode, the self-assembled monolayer including a monomer having an anchor group at one end and an ionic functional group at another end.

Abstract: According to example embodiments, a reflective film includes a plurality of first concave-convex elements having a curved surface and a plurality of second concave-convex elements on the curved surface. The second concave-convex elements may be a smaller scale than a scale of the plurality of first concave-convex elements. The reflective structure may further include a color purity control element configured to reduce degradation of a color purity expressed by the reflective film. The color purity control element may be configured such that at least a complementary light with respect to a color light reflected by the reflective film travels in the same direction as the reflected color light.

Abstract: A reflective polymer dispersed liquid crystal (PDLC) display device includes a PDLC layer between first and second electrodes, the PDLC layer including polymers, liquid crystals, and dichroic dyes having negative dichroism.