Abstract: Disclosed are a method of manufacturing graphene and an apparatus therefor. The method of manufacturing graphene and the apparatus therefor according to the present disclosure allow production of high-quality graphene in a simple manner in a short time without addition of a separate additive.

Abstract: A method for controlling a semiconductor manufacturing facility includes measuring output change amounts of differential pressure sensors in the facility when pressure conditions change by a number of fans. The fans are then classified into different groups and subgroups and control sequences of the subgroups are determined based on the change amounts. Difference values are then calculated, and a control signal is generated to adjust the rotation speed of the fans.

Abstract: A wafer perforating device includes a chuck stage configured to receive a wafer, a housing spaced apart in a vertical direction on the chuck stage, wherein at least one of the housing and the chuck stage moves in a first horizontal direction, and the housing and the chuck stage intersect each other on the first direction, a displacement sensor fixed within the housing and configured to measure a displacement with a surface of the wafer at a perforating point spaced apart periodically in the first direction of the wafer and a laser module fixed within the housing and configured to irradiate a laser into a perforating depth determined according to the displacement at the perforating point. The displacement sensor determines whether an upper particle and a lower particle are present at the perforating point by considering a step height of the displacement, and ignores the displacement of the perforating point with the presence of an upper particle.

Abstract: A wafer cutting apparatus includes a stage to support a wafer, a cutter, and a sensor. The cutter irradiates the wafer with a beam in a first direction to cut the wafer. The sensor is spaced apart from the cutter in a second direction different from the first direction, and measures a spaced distance between the wafer and the cutter. The sensor measures the spaced distance between the wafer and the cutter along a second cutting line parallel to a first cutting line while the cutter cuts the wafer along the first cutting line on the wafer.

Abstract: A semiconductor package includes a first semiconductor chip including a first through-silicon via (TSV), a second semiconductor chip stacked on the first semiconductor chip and including a second TSV, and a non-conductive film formed between the first semiconductor chip and the second semiconductor chip. The non-conductive film includes two layers having different viscosities.

Abstract: Provided is a load cup including a cup having an internal space, a pedestal provided in the internal space, able to be lifted up and down, and loading a wafer onto or unloading a wafer from a polishing head, and a plurality of arrangement parts having a plurality of fastening portions disposed around the pedestal, and moved horizontally in a direction of a center of the pedestal, and arrangement part bodies coupled to the plurality of fastening portions, respectively, and rotated or reciprocated so as to contact a lateral surface of the polishing head, adjusting a center of the wafer to be aligned with a center of the polishing head. A polishing process may then be performed on a layer formed on the wafer.

Abstract: A method for determining a position of a fault of equipment includes receiving a plurality of sound source signals from a plurality of sound source inputting apparatuses, determining an abnormal operation of the equipment by analyzing at least one sound source signal among the sound source signals, and extracting abnormal sound source signals from the sound source signals. The abnormal sound source signals are indicative of abnormal operation of the equipment. The method further includes determining a position of the abnormal operation based on a time difference between the abnormal sound source signals.

Abstract: A method for controlling a semiconductor manufacturing facility includes measuring output change amounts of differential pressure sensors in the facility when pressure conditions change by a number of fans. The fans are then classified into different groups and subgroups and control sequences of the subgroups are determined based on the change amounts. Difference values are then calculated, and a control signal is generated to adjust the rotation speed of the fans.

Abstract: A semiconductor package includes a first semiconductor chip including a first through-silicon via (TSV), a second semiconductor chip stacked on the first semiconductor chip and including a second TSV, and a non-conductive film formed between the first semiconductor chip and the second semiconductor chip. The non-conductive film includes two layers having different viscosities.

Abstract: A semiconductor package includes a first semiconductor chip including a first through-silicon via (TSV), a second semiconductor chip stacked on the first semiconductor chip and including a second TSV, and a non-conductive film formed between the first semiconductor chip and the second semiconductor chip. The non-conductive film includes two layers having different viscosities.

Abstract: A semiconductor package includes a substrate, a plurality of semiconductor chips stacked on the substrate, and a plurality of bonding layers bonded to lower surfaces of the plurality of semiconductor chips. The plurality of bonding layers may be divided into a plurality of groups, each having different physical properties depending on a distance from the substrate.

Abstract: A wafer perforating device includes a chuck stage configured to receive a wafer, a housing spaced apart in a vertical direction on the chuck stage, wherein at least one of the housing and the chuck stage moves in a first horizontal direction, and the housing and the chuck stage intersect each other on the first direction, a displacement sensor fixed within the housing and configured to measure a displacement with a surface of the wafer at a perforating point spaced apart periodically in the first direction of the wafer and a laser module fixed within the housing and configured to irradiate a laser into a perforating depth determined according to the displacement at the perforating point. The displacement sensor determines whether an upper particle and a lower particle are present at the perforating point by considering a step height of the displacement, and ignores the displacement of the perforating point with the presence of an upper particle.

Abstract: A semiconductor package includes a first semiconductor chip including a first through-silicon via (TSV), a second semiconductor chip stacked on the first semiconductor chip and including a second TSV, and a non-conductive film formed between the first semiconductor chip and the second semiconductor chip. The non-conductive film includes two layers having different viscosities.

Abstract: A semiconductor package includes a substrate, a plurality of semiconductor chips stacked on the substrate, and a plurality of bonding layers bonded to lower surfaces of the plurality of semiconductor chips. The plurality of bonding layers may be divided into a plurality of groups, each having different physical properties depending on a distance from the substrate.

Abstract: The present invention relates to an X-ray targeting device which includes a frame installed at an X-ray generator of an X-ray imaging device which outputs X-rays toward a patient to be measured, and a light radiation unit installed at the frame, and radiating guide light in accordance with a direction in which the X-rays are output to display a radiated position or radiated range of the X-rays with respect to the patient. According to the present invention, since an X-ray targeting device includes a light radiation unit radiating guide light in accordance with a radiated direction of X-rays, a worker can easily identify the radiated direction or the radiated range of the X-rays, thereby saving time and effort required for X-ray imaging.

Abstract: A wafer cutting apparatus includes a stage to support a wafer, a cutter, and a sensor. The cutter irradiates the wafer with a beam in a first direction to cut the wafer. The sensor is spaced apart from the cutter in a second direction different from the first direction, and measures a spaced distance between the wafer and the cutter. The sensor measures the spaced distance between the wafer and the cutter along a second cutting line parallel to a first cutting line while the cutter cuts the wafer along the first cutting line on the wafer.

Abstract: A substrate processing system includes an index module including wafer carriers. First and second heat processing units are disposed adjacent to the index module. Each of the first and second heat processing units includes a plurality of first heat processing plates sequentially stacked. First and second transfer robots are disposed adjacent to the first and second heat processing units, respectively. Each of the first and second transfer robots is movable along a vertical transfer path and to rotate. First and second coating units are disposed adjacent to first sides of the first and second transfer robots, respectively. Each of the first and second coating units includes a plurality of coating devices sequentially stacked. First and second bake units are disposed adjacent to second sides of the first and second transfer robots, respectively. Each of the first and second bake units includes a plurality of second heat processing plates sequentially stacked.

Abstract: A method of manufacturing a thermochromic substrate, with which transmittance can be increased. The method includes the steps of forming a first thin film as a coating on a base substrate, the refractive index of the first thin film being different from that of a VO2 thin film; forming a pre-thermochromic thin film by coating the first thin film with pure vanadium; forming a second thin film as a coating on the pre-thermochromic thin film, the refractive index of the second thin film being different from that of a VO2 thin film; and heat-treating a resultant stack that includes the base substrate, the first thin film, the pre-thermochromic thin film and the second thin film.

Abstract: The present invention relates to an X-ray targeting device which includes a frame installed at an X-ray generator of an X-ray imaging device which outputs X-rays toward a patient to be measured, and a light radiation unit installed at the frame, and radiating guide light in accordance with a direction in which the X-rays are output to display a radiated position or radiated range of the X-rays with respect to the patient. According to the present invention, since an X-ray targeting device includes a light radiation unit radiating guide light in accordance with a radiated direction of X-rays, a worker can easily identify the radiated direction or the radiated range of the X-rays, thereby saving time and effort required for X-ray imaging.

Abstract: A non-conductive material layer, selected from a non-conductive film and a non-conductive polymer paste, and containing a dispersion of zinc (Zn) particles is disclosed, together with semiconductor packages including the non-conductive material layer. The non-conductive material layer contains zinc (Zn) particles having an average particle diameter of about 1 nm to about 200 nm in a non-conductive polymer base material of a film type, and a semiconductor package includes the non-conductive film. By using the non-conductive film and/or the non-conductive paste containing the zinc dispersion, e a semiconductor package having excellent electric connection properties and high reliability may be manufactured through simple processes at low manufacturing costs.