Patents by Inventor Yong-Woo Jeon
Yong-Woo Jeon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20160133702Abstract: A semiconductor device includes a substrate having a first conductive type active region, a second conductive type drift region in the active region, a gate covering the active region on the drift region, a gate insulating film disposed between the active region and the gate, a second conductive type drain region in a location spaced apart from the gate in the drift region and having a higher doping concentration than that of the drift region, a first conductive type shallow well region spaced apart from the drain region in the drift region and between the gate and the drain region, and a second conductive type source region formed in the first conductive type shallow well region between the gate and the drain region and having a higher doping concentration than that of the first conductive type shallow well region.Type: ApplicationFiled: June 8, 2015Publication date: May 12, 2016Inventors: JAE-HYUN YOO, KWAN-YOUNG KIM, JIN-HYUN NOH, WOO-YEOL MAENG, KEE-MOON CHUN, YONG-WOO JEON
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Patent number: 9257240Abstract: A key assembly which is configured to provide improved click feeling to a user and an electronic device having the same are provided. The key assembly includes a key body of elastic materials and contact projections, each of the contact projections which is protruded and formed from the key body and presses a switch device spaced apart from the key body by a gap providing a certain interval, wherein the key body is installed such that a contact surface of each of the contact projections is in contact with and pushed back by a certain distance by a pre-loading force of the switch device.Type: GrantFiled: June 26, 2013Date of Patent: February 9, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Jeong-Seok Park, Joon-Seo Park, Kwang-Su Seo, Yong-Woo Jeon
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Patent number: 9256317Abstract: A touchscreen apparatus includes pixel rows including pixels configured to display an image, a touch-sensing unit configured to sense a physical touch, light-sensing unit configured to sense incident light, a first sensor gate line configured to provide a first gate signal for activating the light-sensing unit and resetting the touch-sensing unit, a second sensor gate line configured to provide a second gate signal for activating the touch-sensing unit and resetting the light-sensing unit, and a reset circuit configured to provide a common voltage to the pixels based on the operation of at least one of the light-sensing unit and the touch-sensing unit.Type: GrantFiled: December 27, 2013Date of Patent: February 9, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Seung-eon Ahn, I-hun Song, Ji-hoon Ahn, Yong-woo Jeon, Seung-hyup Lee
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Publication number: 20150331455Abstract: An electronic device is provided. The electronic device includes a mounting surface configured to accept another electronic device, a holder recess provided in the mounting surface and configured to hold the other electronic device at certain angles, and a rotatable clip installed in the mounting surface, and configured to control at least one part of the other electronic device, wherein other electronic device is accommodated at one end by the holder recess, and is accommodated at another end by the rotatable clip, such that the other electronic device is combined with the electronic device.Type: ApplicationFiled: May 15, 2015Publication date: November 19, 2015Inventors: Bo-Hyun JUNG, Chong-Du KIM, Yong-Woo JEON
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Patent number: 9147022Abstract: A method for calculating values of parameters of a TFT includes calculating a set of simulated current-voltage (I-V) values using state-density-functions over an entire energy band in a band gap of an amorphous semiconductor of the TFT. The method further includes comparing the set of simulated I-V values with a set of measured I-V values of the TFT to determine a value of a parameter of the TFT. The method may further include calculating values of an acceptor state-density-function gA using a set of electrostatic capacity-voltage (C-V) values of the TFT measured according to a frequency. The method may further include determining values of a donor state-density-function gD and values of an interface state-density-function Dit over the entire energy band in the band gap.Type: GrantFiled: May 25, 2012Date of Patent: September 29, 2015Assignee: SAMSUNG DISPLAY CO., LTD.Inventors: Je-Hun Lee, Byung-Du Ahn, Sei-Yong Park, Jun-Hyun Park, Jae-Woo Park, Dae-Hwan Kim, Sung-Chul Kim, Yong-Woo Jeon
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Patent number: 9035910Abstract: Optical touch screen apparatuses with remote sensing and touch sensing by using a light sensor transistor including an oxide semiconductor transistor. The optical touch screen apparatus includes a pixel array of a plurality of sensing pixels arranged in a plurality of rows and a plurality of columns. Each of the sensing pixels includes a light sensing pixel for sensing light that is irradiated by an external light source and a touch sensing pixel for sensing display light that is reflected by a screen touch. The light sensing pixel includes a first light sensor transistor and a first switch transistor connected each other in series, and the touch sensing pixel includes a second light sensor transistor and a second switch transistor connected each other in series.Type: GrantFiled: March 29, 2012Date of Patent: May 19, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Sang-hun Jeon, I-hun Song, Seung-eon Ahn, Young Kim, Chang-jung Kim, Yong-woo Jeon
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Patent number: 8994136Abstract: A silicon photomultiplier detector cell may include a photodiode region and a readout circuit region formed on a same substrate. The photodiode region may include a first semiconductor layer exposed on a surface of the silicon photomultiplier detector cell and doped with first type impurities; a second semiconductor layer doped with second type impurities; and/or a first epitaxial layer between the first semiconductor layer and the second semiconductor layer. The first epitaxial layer may contact the first semiconductor layer and the second semiconductor layer. The first epitaxial layer may be doped with the first type impurities at a concentration lower than a concentration of the first type impurities of the first semiconductor layer.Type: GrantFiled: September 4, 2013Date of Patent: March 31, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Jae-chul Park, Young Kim, Chae-hun Lee, Yong-woo Jeon, Chang-jung Kim
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Publication number: 20140209804Abstract: An apparatus for generating an image may include a plurality of scintillator layers configured to convert an incident beam into an optical signal; a plurality of micro cells configured to turn on or off depending on whether or not the micro cells detect the optical signal; a reaction depth determining unit configured to detect a decay pattern of the optical signal, on the basis of on/off signals of the micro cells, and configured to determine a type of the scintillator layers with which the incident beam has reacted; and/or a reading unit configured to decide an occurrence location of the incident beam and then generates a photographed image.Type: ApplicationFiled: November 14, 2013Publication date: July 31, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Chae-hun LEE, Young KIM, Jae-chul PARK, Yong-woo JEON
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Publication number: 20140210035Abstract: A silicon photomultiplier detector cell may include a photodiode region and a readout circuit region formed on a same substrate. The photodiode region may include a first semiconductor layer exposed on a surface of the silicon photomultiplier detector cell and doped with first type impurities; a second semiconductor layer doped with second type impurities; and/or a first epitaxial layer between the first semiconductor layer and the second semiconductor layer. The first epitaxial layer may contact the first semiconductor layer and the second semiconductor layer. The first epitaxial layer may be doped with the first type impurities at a concentration lower than a concentration of the first type impurities of the first semiconductor layer.Type: ApplicationFiled: September 4, 2013Publication date: July 31, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jae-chul PARK, Young KIM, Chae-hun LEE, Yong-woo JEON, Chang-jung KIM
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Publication number: 20140184570Abstract: An touchscreen apparatus includes pixel rows including pixels configured to display an image, a touch-sensing unit configured to sense a physical touch and a light-sensing unit configured to sense incident light, the touch-sensing unit and the light-sensing unit being between two adjacent pixel rows and configured to operate based on first and second gate signals, a first sensor gate line connected to the light-sensing unit and the touch-sensing unit and configured to provide the first gate for activating the light-sensing unit and resetting the touch-sensing unit, a second sensor gate line connected to both the light-sensing unit and the touch-sensing unit and configured to provide the second gate signal for activating the touch-sensing unit and resetting the light-sensing unit, and a reset circuit configured to provide a common voltage to the pixels based on the operation of at least one of the light-sensing unit and the touch-sensing unit.Type: ApplicationFiled: December 27, 2013Publication date: July 3, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Seung-eon AHN, I-hun SONG, Ji-hoon AHN, Yong-woo JEON, Seung-hyup LEE
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Publication number: 20130341172Abstract: A key assembly which is configured to provide improved click feeling to a user and an electronic device having the same are provided. The key assembly includes a key body of elastic materials and contact projections, each of the contact projections which is protruded and formed from the key body and presses a switch device spaced apart from the key body by a gap providing a certain interval, wherein the key body is installed such that a contact surface of each of the contact projections is in contact with and pushed back by a certain distance by a pre-loading force of the switch device.Type: ApplicationFiled: June 26, 2013Publication date: December 26, 2013Inventors: Jeong-Seok PARK, Joon-Seo PARK, Kwang-Su SEO, Yong-Woo JEON
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Publication number: 20130088460Abstract: An optical touch screen apparatus that includes a display pixel including a display cell and a driving transistor, the display cell configured to display an image and the driving transistor configured to turn on or off the display cell, the driving transistor having a double gate structure; and a light-sensing pixel including a light-sensing transistor and a switch transistor, the light-sensing transistor configured to sense incident light and the switch transistor configured to output data from the light-sensing transistor, the switch transistor having the double gate structure, wherein the double gate structure is a structure in which a bottom gate and a top gate are arranged such that a channel layer is disposed therebetween. The top gate may be formed together when forming a transparent electrode in the pixel, and thus even when the top gate is further included, the number of manufacturing processes is not increased.Type: ApplicationFiled: August 1, 2012Publication date: April 11, 2013Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Seung-eon Ahn, I-hun Song, Sang-hun Jeon, Chang-jung Kim, Young Kim, Yong-woo Jeon
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Publication number: 20130063400Abstract: In one embodiment, a light-sensing apparatus includes a light-sensing pixel array that has a plurality of light-sensing pixels arranged in rows and columns; and a gate driver configured to provide the light-sensing pixels with a gate voltage and a reset signal that have inverted phases. Each of the light-sensing pixels includes a light sensor transistor configured to sense light and a switch transistor configured to output a light-sensing signal from the light-sensor transistor. The gate driver includes a plurality of gate lines connected to gates of the switch transistors, a plurality of reset lines connected to gates of the light sensor transistors, and a plurality of phase inverters each connected between a corresponding reset line and a gate line. Thus, when a gate voltage is applied to one of the plurality of gate lines, a reset signal with an inversed phase to the gate voltage may be applied to a corresponding reset line.Type: ApplicationFiled: July 19, 2012Publication date: March 14, 2013Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Seung-eon Ahn, I-Hun Song, Sang-hun Jeon, Young Kim, Yong-woo Jeon, Chang-jung Kim
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Publication number: 20130050148Abstract: Optical touch screen apparatuses with remote sensing and touch sensing by using a light sensor transistor including an oxide semiconductor transistor. The optical touch screen apparatus includes a pixel array of a plurality of sensing pixels arranged in a plurality of rows and a plurality of columns. Each of the sensing pixels includes a light sensing pixel for sensing light that is irradiated by an external light source and a touch sensing pixel for sensing display light that is reflected by a screen touch. The light sensing pixel includes a first light sensor transistor and a first switch transistor connected each other in series, and the touch sensing pixel includes a second light sensor transistor and a second switch transistor connected each other in series.Type: ApplicationFiled: March 29, 2012Publication date: February 28, 2013Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sang-hun Jeon, I-hun Song, Seung-eon Ahn, Young Kim, Chang-jung Kim, Yong-woo Jeon
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Publication number: 20120323542Abstract: A method for calculating values of parameters of a TFT includes calculating a set of simulated current-voltage (I-V) values using state-density-functions over an entire energy band in a band gap of an amorphous semiconductor of the TFT. The method further includes comparing the set of simulated I-V values with a set of measured I-V values of the TFT to determine a value of a parameter of the TFT. The method may further include calculating values of an acceptor state-density-function gA using a set of electrostatic capacity-voltage (C-V) values of the TFT measured according to a frequency. The method may further include determining values of a donor state-density-function gD and values of an interface state-density-function Dit over the entire energy band in the band gap.Type: ApplicationFiled: May 25, 2012Publication date: December 20, 2012Applicant: SAMSUNG DISPLAY CO., LTD.Inventors: Je-Hun LEE, Byung-Du AHN, Sei-Yong PARK, Jun-Hyun PARK, Jae-Woo PARK, Dae-Hwan KIM, Sung-Chul KIM, Yong-Woo JEON
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Patent number: 8204556Abstract: A hinge device for a portable terminal that includes a first housing and a second housing is provided. The first and second housings are connected by a hinge device at one end of the first housing, and they rotate so that the front and back faces may be reversed. The hinge device includes a first hinge base combined with one side of an end portion of the first housing, a second hinge base combined with one side of an end portion of the second housing and rotating in opposition to the first hinge base, and an elastic member providing an elastic force in a direction that the first hinge base and the second hinge base are adhered closely to each other. The hinge device facilitates a user's viewing of video, such as DMB video, and contributes to the diversification of the design of the portable terminal.Type: GrantFiled: January 8, 2007Date of Patent: June 19, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Jung-Bae Park, Myoung-Hoon Park, Yong-Woo Jeon, Soo-Ik Jung
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Patent number: 8150466Abstract: An apparatus for detachably installing a smart card, such as a Subscriber Identity Module (SIM) card, in a portable terminal is provided. The apparatus includes an opening on the portable terminal, a sliding member slidably coupled to the terminal to move in and out of the opening, and a cover on an end portion of the sliding member to open and close the opening as the sliding member slides. The SIM card is placed on the sliding member to move in and out of the opening through a sliding movement of the sliding member. The apparatus prevent damage to the SIM card when it is detachably installed in the portable terminal through the sliding movement of the sliding member.Type: GrantFiled: August 23, 2007Date of Patent: April 3, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Jung-Bae Park, Yong-Woo Jeon, Byoung-Joo Yi, Gyu-Bok Lee, Sung-Sun Park, Young-Jun Jung
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Patent number: 7443439Abstract: Disclosed herein is a camera lens module pop-up device for a portable wireless terminal which enables insertion and extraction of a camera lens module into and from the portable wireless terminal in a pop-up manner.Type: GrantFiled: September 22, 2004Date of Patent: October 28, 2008Assignee: Samsung Electronics Co., Ltd.Inventors: Sang-Hyeon Kim, Yong-Woo Jeon
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Publication number: 20080096606Abstract: An apparatus for detachably installing a smart card, such as a Subscriber Identity Module (SIM) card, in a portable terminal is provided. The apparatus includes an opening on the portable terminal, a sliding member slidably coupled to the terminal to move in and out of the opening, and a cover on an end portion of the sliding member to open and close the opening as the sliding member slides. The SIM card is placed on the sliding member to move in and out of the opening through a sliding movement of the sliding member. The apparatus prevent damage to the SIM card when it is detachably installed in the portable terminal through the sliding movement of the sliding member.Type: ApplicationFiled: August 23, 2007Publication date: April 24, 2008Applicant: SAMSUNG ELECTRONICS CO. LTD.Inventors: Jung-Bae PARK, Yong-Woo JEON, Byoung-Joo YI, Gyu-Bok LEE, Sung-Sun PARK, Young-Jun JUNG
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Publication number: 20080009330Abstract: Provided is a dual axis rotation type portable communication terminal including a main housing having at least one key and a rotatable housing having at least one display device, the rotatable housing being connected to the main housing so as to rotate about a first hinge axis extending in a longitudinal direction of the main housing so that the rotatable housing is cradled on the main housing at an angle, the rotatable housing being adapted to rotate about a second hinge axis extending parallel to the first hinge axis so that the rotatable housing is cradled on the main housing at an angle in at least two different positions relative to the main housing.Type: ApplicationFiled: June 5, 2007Publication date: January 10, 2008Inventors: Soo-Ik Jung, Seung-Hee Hyun, Jong-Yang Kim, Yong-Woo Jeon, Byung-Yeol Ko, Dong-Wook Kwon