Patents by Inventor Yong-wook Lee

Yong-wook Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200089100
    Abstract: A photomask for negative-tone development (NTD) includes a main region, and a scribe lane region surrounding the main region and including a first lane and a second lane. The first and the second lane is provided at first opposite sides of each other with respect to the main region. The first lane includes a first sub-lane extending in a first direction and a second sub-lane that extending in the first direction. The first sub-lane includes a first dummy pattern and the second sub-lane includes a second dummy pattern. The first dummy pattern and the second dummy pattern are configured to radiate light exceeding a threshold dose of light to a first portion of a negative-tone photoresist provided under the first lane of the photomask.
    Type: Application
    Filed: September 9, 2019
    Publication date: March 19, 2020
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Soon Mok HA, Jae-hee KIM, Yong-wook LEE, Yong-woo KIM
  • Patent number: 9581515
    Abstract: Disclosed is an optical fiber pressure sensor including: a polarization beam splitter that splits input light from a broadband light source into two beams; a polarization controller through which vertically and horizontally polarized light coming out of the polarization beam splitter pass; a pressure chamber in which the polarization beam splitter and the polarization controller may be placed; and an optical spectrum analyzer into which vertically and horizontally polarized light passing through the polarization controller and getting out of the polarization beam splitter is introduced, wherein the pressure chamber includes a polarization-maintaining fiber and an optical fiber Bragg grating.
    Type: Grant
    Filed: April 6, 2015
    Date of Patent: February 28, 2017
    Assignee: PUKYONG NATIONAL UNIVERSITY INDUSTRY-UNIVERSITY COOPERATION FOUNDATION
    Inventors: Yong Wook Lee, Tae Kyu Noh
  • Patent number: 9507092
    Abstract: An optical fiber flexible multi-wavelength filter based on a polarization-diversity loop includes a pair of high-birefringence optical fibers, a polarization beam splitter connected to the pair of high-birefringence optical fibers and dividing light incident from a broadband light source into two polarized beams, and a polarization controller connected to the high-birefringence optical fibers or the polarization beam splitter and controlling the two polarized beams divided by the polarization beam splitter. The polarization controller includes a ½ wave plate or a ¼ wave plate, and the polarization controller disposed between the high-birefringence optical fibers controls an angle difference between principal axes of the high-birefringence optical fibers and visibility. Interference in the high-birefringence optical fibers is controlled via changing polarized light incident from the broadband light source using the polarization controller.
    Type: Grant
    Filed: July 14, 2014
    Date of Patent: November 29, 2016
    Assignee: PUKYONG NATIONAL UNIVERSITY INDUSTRY-UNIVERSITY COOPERATION FOUNDATION
    Inventors: Yong Wook Lee, Kyoung Soo Park
  • Publication number: 20160245713
    Abstract: Disclosed is an optical fiber pressure sensor including: a polarization beam splitter that splits input light from a broadband light source into two beams; a polarization controller through which vertically and horizontally polarized light coming out of the polarization beam splitter pass; a pressure chamber in which the polarization beam splitter and the polarization controller may be placed; and an optical spectrum analyzer into which vertically and horizontally polarized light passing through the polarization controller and getting out of the polarization beam splitter is introduced, wherein the pressure chamber includes a polarization-maintaining fiber and an optical fiber Bragg grating.
    Type: Application
    Filed: April 6, 2015
    Publication date: August 25, 2016
    Inventors: Yong Wook Lee, Tae Kyu Noh
  • Publication number: 20160004013
    Abstract: An optical fiber flexible multi-wavelength filter based on a polarization-diversity loop includes a pair of high-birefringence optical fibers, a polarization beam splitter connected to the pair of high-birefringence optical fibers and dividing light incident from a broadband light source into two polarized beams, and a polarization controller connected to the high-birefringence optical fibers or the polarization beam splitter and controlling the two polarized beams divided by the polarization beam splitter. The polarization controller includes a ½ wave plate or a ¼ wave plate, and the polarization controller disposed between the high-birefringence optical fibers controls an angle difference between principal axes of the high-birefringence optical fibers and visibility. Interference in the high-birefringence optical fibers is controlled via changing polarized light incident from the broadband light source using the polarization controller.
    Type: Application
    Filed: July 14, 2014
    Publication date: January 7, 2016
    Inventors: Yong Wook LEE, Kyoung Soo PARK
  • Publication number: 20160003669
    Abstract: An optical fiber vibration sensor includes a polarization-diversity loop based interference unit having a polarization-maintaining fiber configured to generate an interference spectrum, a polarizing beam splitter connected to the polarization-maintaining fiber and configured to split light incident from a narrowband light source into two polarized beams, and a polarization controller connected to the polarization-maintaining fiber or the polarizing beam splitter and configured to control the two polarized beams split through the polarizing beam splitter, and an optical fiber vibration test unit combined to the polarization-maintaining fiber so as to apply an external vibration to the polarization-maintaining fiber, wherein light output intensity of the polarization-diversity loop based interference unit is converted to an electrical signal by a light detector, and the vibration applied to the polarization-maintaining fiber may be measured through the optical fiber vibration test unit.
    Type: Application
    Filed: July 14, 2014
    Publication date: January 7, 2016
    Inventors: Yong Wook LEE, Young Suk KIM
  • Patent number: 8563903
    Abstract: Provided are a method and circuit for controlling heat generation of a power transistor, in which the power transistor can be protected by preventing heat generation of the power transistor by using a metal-insulator transition (MIT) device that can function as a fuse and can be semi-permanently used.
    Type: Grant
    Filed: November 11, 2008
    Date of Patent: October 22, 2013
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Hyun-Tak Kim, Yong-Wook Lee, Bong-Jun Kim, Sun-Jin Yun
  • Patent number: 8536554
    Abstract: Provided are a 3-terminal MIT switch which can easily control a discontinuous MIT jump and does not need a conventional gate insulating layer, a switching system including the 3-terminal MIT switch, and a method of controlling an MIT of the 3-terminal MIT switch. The 3-terminal MIT switch includes a 2-terminal MIT device, which generates discontinuous MIT in a transition voltage, an inlet electrode and an outlet electrode, which are respectively connected to each terminal of the 2-terminal MIT device, and a control electrode, which is connected to the inlet electrode and includes an external terminal separated from an external terminal of the inlet electrode, wherein an MIT of the 2-terminal MIT device is controlled according to a voltage or a current applied to the control electrode. The switching system includes the 3-terminal MIT switch, a voltage source connected to the inlet electrode, and a control source connected to the control electrode.
    Type: Grant
    Filed: May 7, 2008
    Date of Patent: September 17, 2013
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Hyun-Tak Kim, Yong-Wook Lee, Bong-Jun Kim, Sung-Youl Choi, Sun-Jin Yun
  • Patent number: 8330135
    Abstract: Provided are a germanium (Ge) based metal-insulator transition (MIT) thin film which is formed of a Ge single-element material instead of a compound material of two or more elements and by which material growth may be easily performed and a problem of a second phase characteristic in accordance with a structural defect and an included impurity may be solved, an MIT device including the MIT thin film, and a method of fabricating the MIT device. The MIT device includes a substrate; a germanium (Ge) based MIT thin film which is formed of a Ge single-element material on the substrate and in which a discontinuous MIT occurs at a predetermined transition voltage; and at least two thin film electrodes contacting the Ge based MIT thin film, wherein the discontinuous MIT occurs in the Ge based MIT thin film due to a voltage or a current which is applied through the thin film electrodes.
    Type: Grant
    Filed: June 20, 2008
    Date of Patent: December 11, 2012
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Sung-Youl Choi, Bong-Jun Kim, Yong-Wook Lee, Jae-Yeob Shim, Hyun-Tak Kim
  • Patent number: 8305221
    Abstract: Provided are an abrupt MIT device with variable MIT temperature or voltage, an MIT sensor using the abrupt MIT device, and an alarm apparatus and a secondary battery anti-explosion circuit including the MIT sensor. The MIT device includes an abrupt MIT layer undergoing an abrupt MIT at a transition temperature or a transition voltage and at least two electrode layers contacting the abrupt MIT layer. The transition temperature or the transition voltage varies with at least one of factors including a voltage applied to the electrode layers, a temperature, an electromagnetic wave, a pressure, and a gas concentration that affect the abrupt MIT layer. The MIT sensor is a temperature sensor, an infrared sensor, an image sensor, a pressure sensor, a gas-concentration sensor, or a switch. The alarm apparatus includes the MIT sensor and an alarm-signaling unit connected in series with the MIT sensor.
    Type: Grant
    Filed: May 30, 2007
    Date of Patent: November 6, 2012
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Hyun-Tak Kim, Bong-Jun Kim, Byung-Gyu Chae, Sun-Jin Yun, Sung-Youl Choi, Yong-Wook Lee, JungWook Lim, Sang-Kuk Choi, Kwang-Yong Kang
  • Patent number: 8207750
    Abstract: Provided are a circuit for continuously measuring a discontinuous metal-insulator transition (MIT) of an MIT element and an MIT sensor using the circuit. The circuit comprises a to-be-measured object unit including the MIT element having a discontinuous MIT occurring at the transition voltage thereof, a power supply unit applying a predetermined pulse current or voltage signal to the to-be-measured object unit, a measurement unit measuring the discontinuous MIT of the MIT element, and a microprocessor controlling the power supply unit and the measurement unit. The discontinuous MIT measurement circuit continuously measures the discontinuous MIT of the MIT element, and thus it can be used as a sensor for sensing a variation in an external factor.
    Type: Grant
    Filed: July 5, 2007
    Date of Patent: June 26, 2012
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Hyun-Tak Kim, Bong-Jun Kim, Yong-Wook Lee, Sun-Jin Yun, Sang-Kuk Choi
  • Publication number: 20110304403
    Abstract: Provided are an oscillatory circuit based on a metal-insulator transition (MIT) device that can generate a simple and very high oscillating frequency using the MIT device, and a method of driving the oscillatory circuit. The oscillatory circuit includes the MIT device that comprises an MIT thin film and an electrode thin film connected to the MIT thin film and in which an abrupt MIT is generated due to an MIT generating voltage, a resistor that is serially connected to the MIT device, an electrical power source limiting the maximum amount of an applied current and applying a direct current constant voltage to the MIT device, and a light source irradiating electromagnetic waves on the MIT device, wherein the oscillating properties are generated by irradiating the electromagnetic waves using the light source.
    Type: Application
    Filed: August 2, 2011
    Publication date: December 15, 2011
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Yong-wook Lee, Bongjun Kim, Sungyoul Choi, Jungwook Lim, Sun-Jin Yun, Byung-Gyu Chae, Hyun-Tak Kim, Gyungock Kim
  • Patent number: 8031021
    Abstract: Provided are an oscillatory circuit based on a metal-insulator transition (MIT) device that can generate a simple and very high oscillating frequency using the MIT device, and a method of driving the oscillatory circuit. The oscillatory circuit includes the MIT device that comprises an MIT thin film and an electrode thin film connected to the MIT thin film and in which an abrupt MIT is generated due to an MIT generating voltage, a resistor that is serially connected to the MIT device, an electric al power source limiting the maximum amount of an applied current and applying a direct current constant voltage to the MIT device, and a light source irradiating electromagnetic waves on the MIT device, wherein the oscillating properties are generated by irradiating the electromagnetic waves using the light source.
    Type: Grant
    Filed: October 31, 2007
    Date of Patent: October 4, 2011
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Yong-Wook Lee, Bongjun Kim, Sungyoul Choi, Jungwook Lim, Sun-Jin Yun, Byung-Gyu Chae, Hyun-Tak Kim, Gyungock Kim
  • Patent number: 8031022
    Abstract: Provided are an MIT device-based oscillation circuit including a power source, an MIT device and a variable resistor, in which a generation of an oscillation and an oscillation frequency are determined according to a voltage applied from the power source and a resistance of the variable resistor, and a method of adjusting the oscillation frequency of the oscillation circuit. The MIT device includes an MIT thin film and an electrode thin film connected to the MIT thin film, and generates a discontinuous MIT at an MIT generation voltage, the variable resistor is connected in series to the MIT device, and the power source applies a voltage or an electric current to the MIT device. The generation of an oscillation and an oscillation frequency are determined according to the voltage applied from the power source and the resistance of the variable resistor.
    Type: Grant
    Filed: March 5, 2008
    Date of Patent: October 4, 2011
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Yong-Wook Lee, Bong-Jun Kim, Hyun-Tak Kim, Sung-Youl Choi, Byung-Gyu Chae, Jung-Wook Lim, Sun-Jin Yun
  • Publication number: 20110233616
    Abstract: Provided are a germanium (Ge) based metal-insulator transition (MIT) thin film which is formed of a Ge single-element material instead of a compound material of two or more elements and by which material growth may be easily performed and a problem of a second phase characteristic in accordance with a structural defect and an included impurity may be solved, an MIT device including the MIT thin film, and a method of fabricating the MIT device. The MIT device includes a substrate; a germanium (Ge) based MIT thin film which is formed of a Ge single-element material on the substrate and in which a discontinuous MIT occurs at a predetermined transition voltage; and at least two thin film electrodes contacting the Ge based MIT thin film, wherein the discontinuous MIT occurs in the Ge based MIT thin film due to a voltage or a current which is applied through the thin film electrodes.
    Type: Application
    Filed: June 20, 2008
    Publication date: September 29, 2011
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Sung-Youl Choi, Bong-Jun Kim, Yong-Wook Lee, Jae-Yeob Shim, Hyun-Tak Kim
  • Patent number: 8017268
    Abstract: Provided is a lithium secondary battery including a discharge unit capable of delaying or preventing a battery explosion. The lithium secondary battery includes a discharge unit disposed parallel to a battery body. The discharge unit includes a first electrode connected to a positive electrode of the battery body, a second electrode connected to a negative electrode of the battery body, and a discharge material film, disposed between the first electrode and the second electrode, inducing a abrupt discharge above a predetermined temperature. The discharge material film, e.g., a abrupt metal-insulator transition (MIT) material film can induce a abrupt discharge, thereby preventing or delaying a battery explosion.
    Type: Grant
    Filed: January 12, 2006
    Date of Patent: September 13, 2011
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Hyun-Tak Kim, Doo-Hyeb Youn, Byung-Gyu Chae, Kwang-Yong Kang, Bong-Jun Kim, Yong-Wook Lee, Sun-Jin Yun, Jung-Wook Lim, Gyung-Ock Kim, Sung-Lyul Maeng
  • Patent number: 7989792
    Abstract: An abrupt MIT (metal-insulator transition) device with parallel MIT material layers is provided. The abrupt MIT device includes a first electrode disposed on a certain region of a substrate, a second electrode disposed so as to be spaced a predetermined distance apart from the first electrode, and at least one MIT material layer electrically connecting the first electrode with the second electrode and having a width that allows the entire region of the MIT material layer to be transformed into a metal layer due to an MIT. Due to this configuration, deterioration of the MIT material layer, which is typically caused by current flowing through the MIT material layer, is less likely to occur.
    Type: Grant
    Filed: January 31, 2007
    Date of Patent: August 2, 2011
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Hyun-Tak Kim, Byung-Gyu Chae, Kwang-Yong Kang, Bong-Jun Kim, Yong-Wook Lee, Sun-Jin Yun
  • Patent number: 7944360
    Abstract: Provided are a temperature sensor using a metal-insulator transition (MIT) device subject to abrupt MIT at a specific temperature and an alarm including the temperature sensor. The abrupt MIT device includes an abrupt MIT thin film and at least two electrode thin films that contacts the abrupt MIT thin film. The abrupt MIT device generates abrupt metal-insulator transition at a specific transition temperature. The alarm includes a temperature sensor comprising an abrupt MIT device, and an alarm signaling device serially connected to the temperature sensor. Accordingly, the alarm can be manufactured to have a simple circuit and be of a small size by including the temperature sensor using an abrupt MIT device.
    Type: Grant
    Filed: June 27, 2006
    Date of Patent: May 17, 2011
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Hyun-Tak Kim, Kwang-Yong Kang, Yong-Wook Lee, Byung-Gyu Chae, Bong-Jun Kim, Sang-Kuk Choi, Sun-Jin Yun
  • Patent number: 7911756
    Abstract: Provided are a low-voltage noise preventing circuit using an abrupt metal-insulator transition (MIT) device which can effectively remove a noise signal with a voltage less than a rated signal voltage. The abrupt MIT device is serially connected to the electrical and/or electronic system to be protected from the noise signal, and is subject to abrupt MIT at a predetermined voltage. Accordingly, low-voltage noise can be effectively removed.
    Type: Grant
    Filed: March 7, 2006
    Date of Patent: March 22, 2011
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Hyun-Tak Kim, Kwang-Yong Kang, Byung-Gyu Chae, Bong-Jun Kim, Yong-Wook Lee, Sun-Jin Yun, Gyung-Ock Kim
  • Publication number: 20110018607
    Abstract: Provided are a method and circuit for controlling heat generation of a power transistor, in which the power transistor can be protected by preventing heat generation of the power transistor by using a metal-insulator transition (MIT) device that can function as a fuse and can be semi-permanently used.
    Type: Application
    Filed: November 11, 2008
    Publication date: January 27, 2011
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Hyun Tak Kim, Yong-Wook Lee, Bong-Jun Kim, Sun-jin Yun