Patents by Inventor Yong-wook Lee

Yong-wook Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20090114896
    Abstract: Provided are a memory device that undergoes no structural phase change, maintains a uniform thin film, and can perform a high-speed switching operation, and a method of operating the same. The memory device includes a substrate, an abrupt MIT material layer, and a plurality of electrodes. The abrupt MIT material layer is disposed on the substrate and undergoes an abrupt metal-insulator transition by an energy change between electrons. The plurality of electrodes are brought into contact with the abrupt MIT material layer and are melted by heat to form a conductive path on the abrupt MIT material layer.
    Type: Application
    Filed: June 29, 2006
    Publication date: May 7, 2009
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Hyun-Tak Kim, Bong-Jun Kim, Kwang-Yong Kang, Sun-Jin Yun, Yong-Wook Lee, Byung-Gyu Chae
  • Publication number: 20090057820
    Abstract: An abrupt MIT (metal-insulator transition) device with parallel conducting layers is provided. The abrupt MIT device includes a first electrode disposed on a certain region of a substrate, a second electrode disposed so as to be spaced a predetermined distance apart from the first electrode, and at least one conducting layer electrically connecting the first electrode with the second electrode and having a width that allows the entire region of the conducting layer to be transformed into a metal layer due to an MIT. Due to this configuration, deterioration of the conducting layer, which is typically caused by current flowing through the conducting layer, is less likely to occur.
    Type: Application
    Filed: January 31, 2007
    Publication date: March 5, 2009
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Hyun-Tak Kim, Byung-Gyu Chae, Kwang-Yong Kang, Bong-Jun Kim, Yong-Wook Lee, Sun-Jin Yun
  • Patent number: 7489492
    Abstract: Provided are an abrupt metal-insulator transition (MIT) device for bypassing super-high voltage noise to protect an electric and/or electronic system, such as, a high-voltage switch, from a super-high voltage, a high-voltage noise removing circuit for bypassing the super-high voltage noise using the abrupt MIT device, and an electric and/or electronic system including the high-voltage noise removing circuit. The abrupt MIT device includes a substrate, a first abrupt MIT structure, and a second abrupt MIT structure. The first and second abrupt MIT structures are formed on an upper surface and a lower surface, respectively, of the substrate. The high-voltage noise removing circuit includes an abrupt MIT device chain connected in parallel to the electric and/or electronic system to be protected. The abrupt MIT device chain includes at least two abrupt MIT devices serially connected to each other.
    Type: Grant
    Filed: January 29, 2008
    Date of Patent: February 10, 2009
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Hyun Tak Kim, Kwang Yong Kang, Bong Jun Kim, Yong Wook Lee, Sun Jin Yun, Byung Gyu Chae, Gyung Ock Kim
  • Publication number: 20080297358
    Abstract: Provided are a temperature sensor using a metal-insulator transition (MIT) device subject to abrupt MIT at a specific temperature and an alarm including the temperature sensor. The abrupt MIT device includes an abrupt MIT thin film and at least two electrode thin films that contacts the abrupt MIT thin film. The abrupt MIT device generates abrupt metal-insulator transition at a specific transition temperature. The alarm includes a temperature sensor comprising an abrupt MIT device, and an alarm signaling device serially connected to the temperature sensor. Accordingly, the alarm can be manufactured to have a simple circuit and be of a small size by including the temperature sensor using an abrupt MIT device.
    Type: Application
    Filed: June 27, 2006
    Publication date: December 4, 2008
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Hyun-Tak Kim, Kwang Yong Kang, Yong Wook Lee, Byung Gyu Chae, Bong Jun Kim, Sang Kuk Choi, Sun Jin Yun
  • Publication number: 20080197916
    Abstract: Provided are a low-voltage noise preventing circuit using an abrupt metal-insulator transition (MIT) device which can effectively remove a noise signal with a voltage less than a rated signal voltage. The abrupt MIT device is serially connected to the electrical and/or electronic system to be protected from the noise signal, and is subject to abrupt MIT at a predetermined voltage. Accordingly, low-voltage noise can be effectively removed.
    Type: Application
    Filed: March 7, 2006
    Publication date: August 21, 2008
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Hyun-Tak Kim, Kwang-Yong Kang, Byung-Gyu Chae, Bong-Jun Kim, Yong-Wook Lee, Sun-Jin Yun, Gyung-Ock Kim
  • Publication number: 20080142900
    Abstract: Provided are an abrupt metal-insulator transition (MIT) device for bypassing super-high voltage noise to protect an electric and/or electronic system, such as, a high-voltage switch, from a super-high voltage, a high-voltage noise removing circuit for bypassing the super-high voltage noise using the abrupt MIT device, and an electric and/or electronic system including the high-voltage noise removing circuit. The abrupt MIT device includes a substrate, a first abrupt MIT structure, and a second abrupt MIT structure. The first and second abrupt MIT structures are formed on an upper surface and a lower surface, respectively, of the substrate. The high-voltage noise removing circuit includes an abrupt MIT device chain connected in parallel to the electric and/or electronic system to be protected. The abrupt MIT device chain includes at least two abrupt MIT devices serially connected to each other.
    Type: Application
    Filed: January 29, 2008
    Publication date: June 19, 2008
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Hyun Tak KIM, Kwang Yong KANG, Bong Jun KIM, Yong Wook LEE, Sun Jin YUN, Byung Gyu CHAE, Gyung Ock KIM
  • Patent number: 7040336
    Abstract: A gas delivery system for providing a gas to manufacturing equipment includes a gas supply unit for providing the gas to the manufacturing equipment including devices to regulate the supply of gas from the gas supply unit to the manufacturing equipment. The system includes a main control unit for regulating the supply of the gas to the manufacturing equipment. The gas delivery system includes a supplemental control unit which receives an emergency shutdown signal from the main control unit for closing off the supply of gas in response to a malfunction of the main control unit and generates a signal for maintaining a gas flow to operate the manufacturing equipment until the cause of the malfunction has been determined. With the system, an unnecessary emergency shutdown of gas supply to semiconductor manufacturing equipment in response to a malfunction of a main controller can be prevented.
    Type: Grant
    Filed: September 18, 2003
    Date of Patent: May 9, 2006
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yu-kweon Kim, Seung-ki Chae, Jai-kang Jeon, Young-seok Roh, Yong-wook Lee
  • Publication number: 20040123907
    Abstract: A gas delivery system for providing a gas to manufacturing equipment includes a gas supply unit for providing the gas to the manufacturing equipment including devices to regulate the supply of gas from the gas supply unit to the manufacturing equipment. The system includes a main control unit for regulating the supply of the gas to the manufacturing equipment. The gas delivery system includes a supplemental control unit which receives an emergency shutdown signal from the main control unit for closing off the supply of gas in response to a malfunction of the main control unit and generates a signal for maintaining a gas flow to operate the manufacturing equipment until the cause of the malfunction has been determined. With the system, an unnecessary emergency shutdown of gas supply to semiconductor manufacturing equipment in response to a malfunction of a main controller can be prevented.
    Type: Application
    Filed: September 18, 2003
    Publication date: July 1, 2004
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Yu-Kweon Kim, Seung-Ki Chae, Jai-Kang Jeon, Young-Seok Roh, Yong-Wook Lee
  • Publication number: 20030112581
    Abstract: Disclosed is an electric double layer capacitor, including a unit cell of completely combined polarizable electrodes and metal cases, and a fabrication method thereof. The method includes the steps of pitting or etching any one face of a metal substrate made of the same material as the metal cases to form a plurality of indentations, coating slurry of an electrode material consisting mainly of an activated carbon powder onto the indented face of the metal substrate, compressing the coated face by use of a heating roll to afford the polarizable electrodes, and welding the polarizable electrodes and the metal cases after aligning the centers thereof with each other. In the thusly fabricated electric double layer capacitor, the electrode material of the activated carbon powder is combined with the metal case through the metal substrate adhered to the metal case by welding.
    Type: Application
    Filed: December 16, 2002
    Publication date: June 19, 2003
    Inventors: Kyeong-Tae Kwon, Yong-Wook Lee, An-Soo Kang, Kyong-Min Kim