Patents by Inventor Yong-wook Lee

Yong-wook Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20100301300
    Abstract: Provided are a 3-terminal MIT switch which can easily control a discontinuous MIT jump and does not need a conventipnal gate insulating layer, a switching system including the 3-terminal MIT switch, and a method of controlling an MIT of the 3-terminal MIT switch. The 3-terminal MIT switch includes a 2-terminal MIT device, which generates discontinuous MIT in a transition voltage, an inlet electrode (200) and an outlet electrode (300), which are respectively connected to each terminal of the 2-terminal MIT device, and a control electrode (400), which is connected to the inlet electrode and includes an external terminal separated from an external terminal of the inlet electrode, wherein an MIT of the 2-terminal MIT device is controlled according to a voltage or a current applied to the control electrode. The switching system includes the 3-terminal MIT switch, a voltage source connected to the inlet electrode, and a control source connected to the control electrode.
    Type: Application
    Filed: May 7, 2008
    Publication date: December 2, 2010
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Hyun-Tak Kim, Yong-Wook Lee, Bong-Jun Kim, Sung-Youl Choi, Sun-Jin Yun
  • Patent number: 7791924
    Abstract: Provided are a memory device that undergoes no structural phase change, maintains a uniform thin film, and can perform a high-speed switching operation, and a method of operating the same. The memory device includes a substrate, an abrupt MIT material layer, and a plurality of electrodes. The abrupt MIT material layer is disposed on the substrate and undergoes an abrupt metal-insulator transition by an energy change between electrons. The plurality of electrodes are brought into contact with the abrupt MIT material layer and are melted by heat to form a conductive path on the abrupt MIT material layer.
    Type: Grant
    Filed: June 29, 2006
    Date of Patent: September 7, 2010
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Hyun-Tak Kim, Bong-Jun Kim, Kwang-Yong Kang, Sun-Jin Yun, Yong-Wook Lee, Byung-Gyu Chae
  • Publication number: 20100213472
    Abstract: A photo-gating switch system comprising a photosensitive device formed on a substrate is provided. The photosensitive device may comprise a photosensitive layer and electrodes formed at both ends of the photosensitive layer. A light source irradiating light to the photosensitive device is integrated beneath the surface of the substrate.
    Type: Application
    Filed: October 6, 2008
    Publication date: August 26, 2010
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Sun-Jin Yun, Yong-Wook Lee, Hyn Tak Kim, Bong-Jun Kim, JungWook LIM, Sung-Youl Choi
  • Publication number: 20100182034
    Abstract: Provided are a circuit for continuously measuring a discontinuous metal-insulator transition (MIT) of an MIT element and an MIT sensor using the circuit. The circuit comprises a to-be-measured object unit including the MIT element having a discontinuous MIT occurring at the transition voltage thereof, a power supply unit applying a predetermined pulse current or voltage signal to the to-be-measured object unit, a measurement unit measuring the discontinuous MIT of the MIT element, and a microprocessor controlling the power supply unit and the measurement unit. The discontinuous MIT measurement circuit continuously measures the discontinuous MIT of the MIT element, and thus it can be used as a sensor for sensing a variation in an external factor.
    Type: Application
    Filed: July 5, 2007
    Publication date: July 22, 2010
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Hyun-Tak Kim, Bong-Jun Kim, Yong-Wook Lee, Sun-Jin Yun, Sang-Kuk Choi
  • Publication number: 20100134936
    Abstract: Provided are an electrical and/or electronic system protecting circuit using an abrupt metal-insulator transition (MIT) device which can effectively remove high-frequency noise with a voltage greater than a rated standard voltage received via a power line or a signal line of an electrical and/or electronic system, and the electrical and/or electronic system including the electrical and/or electronic system protecting circuit. The abrupt MIT device of the electrical and/or electronic system protecting circuit abrupt is connected in parallel to the electrical and/or electronic system to be protected from the noise. The electrical and/or electronic system protecting circuit bypasses toward the abrupt MIT device most of the noise current generated when the voltage greater than the rated standard voltage is applied, thereby protecting the electrical and/or electronic system.
    Type: Application
    Filed: February 17, 2006
    Publication date: June 3, 2010
    Applicant: Electronics and Telecommunications Research Instit
    Inventors: Hyun-Tak Kim, Kwang-Yong Kang, Byung-Gyu Chae, Bong-jun Kim, Sun-jin Yun, Yong-wook Lee, Gyung-Ock Kim, Doo-Hyeb Youn, Jung-Wook Lim
  • Publication number: 20100085126
    Abstract: Provided are an MIT device-based oscillation circuit including a power source, an MIT device and a variable resistor, in which a generation of an oscillation and an oscillation frequency are determined according to a voltage applied from the power source and a resistance of the variable resistor, and a method of adjusting the oscillation frequency of the oscillation circuit. The MIT device includes an MIT thin film and an electrode thin film connected to the MIT thin film, and generates a discontinuous MIT at an MIT generation voltage, the variable resistor is connected in series to the MIT device, and the power source applies a voltage or an electric current to the MIT device. The generation of an oscillation and an oscillation frequency are determined according to the voltage applied from the power source and the resistance of the variable resistor.
    Type: Application
    Filed: March 5, 2008
    Publication date: April 8, 2010
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Yong-Wook Lee, Bong-Jun Kim, Hyun-Tak Kim, Sung-Youl Choi, Byung-Gyu Chae, Jung-Wook Lim, Sun-Jin Yun
  • Publication number: 20100060369
    Abstract: Provided are an oscillatory circuit based on a metal-insulator transition (MIT) device that can generate a simple and very high oscillating frequency using the MIT device, and a method of driving the oscillatory circuit. The oscillatory circuit includes the MIT device that comprises an MIT thin film and an electrode thin film connected to the MIT thin film and in which an abrupt MIT is generated due to an MIT generating voltage, a resistor that is serially connected to the MIT device, an electric al power source limiting the maximum amount of an applied current and applying a direct current constant voltage to the MIT device, and a light source irradiating electromagnetic waves on the MIT device, wherein the oscillating properties are generated by irradiating the electromagnetic waves using the light source.
    Type: Application
    Filed: October 31, 2007
    Publication date: March 11, 2010
    Applicant: Electronics and Telecommunications Research Instit
    Inventors: Yong-Wook Lee, Bongjun Kim, Sungyoul Choi, Jungwook Lim, Sun-Jin Yun, Byung-Gyu Chae, Hyun-Tak Kim, Gyungock Kim
  • Publication number: 20090315724
    Abstract: Provided are an abrupt MIT device with variable MIT temperature or voltage, an MIT sensor using the abrupt MIT device, and an alarm apparatus and a secondary battery anti-explosion circuit including the MIT sensor The MIT device includes an abrupt MIT layer undergoing an abrupt MIT at a transition temperature or a transition voltage and at least two electrode layers contacting the abrupt MIT layer. The transition temperature or the transition voltage varies with at least one of factors including a voltage applied to the electrode layers, a temperature, an electromagnetic wave, a pressure, and a gas concentration that affect the abrupt MIT layer. The MIT sensor is a temperature sensor, an infrared sensor, an image sensor, a pressure sensor, a gas-concentration sensor, or a switch. The alarm apparatus includes the MIT sensor and an alarm-signaling unit connected in series with the MIT sensor.
    Type: Application
    Filed: May 30, 2007
    Publication date: December 24, 2009
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Hyun-Tak Kim, Bong-Jun Kim, Byung-Gyu Chae, Sun-Jin Yun, Sung-Youl Choi, Yong-Wook Lee, JungWook Lim, Sang-Kuk Choi, Kwang-Yong Kang
  • Publication number: 20090286140
    Abstract: Provided is a lithium secondary battery including a discharge unit capable of delaying or preventing a battery explosion. The lithium secondary battery includes a discharge unit disposed parallel to a battery body. The discharge unit includes a first electrode connected to a positive electrode of the battery body, a second electrode connected to a negative electrode of the battery body, and a discharge material film, disposed between the first electrode and the second electrode, inducing a abrupt discharge above a predetermined temperature. The discharge material film, e.g., a abrupt metal-insulator transition (MIT) material film can induce a abrupt discharge, thereby preventing or delaying a battery explosion.
    Type: Application
    Filed: January 12, 2006
    Publication date: November 19, 2009
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Hyun-Tak Kim, Doo-Hyeb Youn, Byung-Gyu Chae, Kwang-Yong Kang, Bong-Jun Kim, Yong-Wook Lee, Sun-Jin Yun, Jung-Wook Lim, Gyung-Ock Kim, Sung-Lyul Maeng
  • Publication number: 20090230940
    Abstract: Provided is a voltage regulation system using an abrupt metal-insulator transition (MIT), which can regulate various zener voltages and can be easily manufactured. The voltage regulation system includes: an input power source: a series resistor connected in series to the input power source; and an MIT insulator connected in series to the series resistor, and undergoing an abrupt MIT such that the range of an output voltage regulated to be kept constant varies according to the resistance of the series resistor.
    Type: Application
    Filed: March 14, 2007
    Publication date: September 17, 2009
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: JungWook Lim, Sun-Jin Yun, Hyun-Tak Kim, Yong-Wook Lee
  • Publication number: 20090114896
    Abstract: Provided are a memory device that undergoes no structural phase change, maintains a uniform thin film, and can perform a high-speed switching operation, and a method of operating the same. The memory device includes a substrate, an abrupt MIT material layer, and a plurality of electrodes. The abrupt MIT material layer is disposed on the substrate and undergoes an abrupt metal-insulator transition by an energy change between electrons. The plurality of electrodes are brought into contact with the abrupt MIT material layer and are melted by heat to form a conductive path on the abrupt MIT material layer.
    Type: Application
    Filed: June 29, 2006
    Publication date: May 7, 2009
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Hyun-Tak Kim, Bong-Jun Kim, Kwang-Yong Kang, Sun-Jin Yun, Yong-Wook Lee, Byung-Gyu Chae
  • Publication number: 20090057820
    Abstract: An abrupt MIT (metal-insulator transition) device with parallel conducting layers is provided. The abrupt MIT device includes a first electrode disposed on a certain region of a substrate, a second electrode disposed so as to be spaced a predetermined distance apart from the first electrode, and at least one conducting layer electrically connecting the first electrode with the second electrode and having a width that allows the entire region of the conducting layer to be transformed into a metal layer due to an MIT. Due to this configuration, deterioration of the conducting layer, which is typically caused by current flowing through the conducting layer, is less likely to occur.
    Type: Application
    Filed: January 31, 2007
    Publication date: March 5, 2009
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Hyun-Tak Kim, Byung-Gyu Chae, Kwang-Yong Kang, Bong-Jun Kim, Yong-Wook Lee, Sun-Jin Yun
  • Patent number: 7489492
    Abstract: Provided are an abrupt metal-insulator transition (MIT) device for bypassing super-high voltage noise to protect an electric and/or electronic system, such as, a high-voltage switch, from a super-high voltage, a high-voltage noise removing circuit for bypassing the super-high voltage noise using the abrupt MIT device, and an electric and/or electronic system including the high-voltage noise removing circuit. The abrupt MIT device includes a substrate, a first abrupt MIT structure, and a second abrupt MIT structure. The first and second abrupt MIT structures are formed on an upper surface and a lower surface, respectively, of the substrate. The high-voltage noise removing circuit includes an abrupt MIT device chain connected in parallel to the electric and/or electronic system to be protected. The abrupt MIT device chain includes at least two abrupt MIT devices serially connected to each other.
    Type: Grant
    Filed: January 29, 2008
    Date of Patent: February 10, 2009
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Hyun Tak Kim, Kwang Yong Kang, Bong Jun Kim, Yong Wook Lee, Sun Jin Yun, Byung Gyu Chae, Gyung Ock Kim
  • Publication number: 20080297358
    Abstract: Provided are a temperature sensor using a metal-insulator transition (MIT) device subject to abrupt MIT at a specific temperature and an alarm including the temperature sensor. The abrupt MIT device includes an abrupt MIT thin film and at least two electrode thin films that contacts the abrupt MIT thin film. The abrupt MIT device generates abrupt metal-insulator transition at a specific transition temperature. The alarm includes a temperature sensor comprising an abrupt MIT device, and an alarm signaling device serially connected to the temperature sensor. Accordingly, the alarm can be manufactured to have a simple circuit and be of a small size by including the temperature sensor using an abrupt MIT device.
    Type: Application
    Filed: June 27, 2006
    Publication date: December 4, 2008
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Hyun-Tak Kim, Kwang Yong Kang, Yong Wook Lee, Byung Gyu Chae, Bong Jun Kim, Sang Kuk Choi, Sun Jin Yun
  • Publication number: 20080197916
    Abstract: Provided are a low-voltage noise preventing circuit using an abrupt metal-insulator transition (MIT) device which can effectively remove a noise signal with a voltage less than a rated signal voltage. The abrupt MIT device is serially connected to the electrical and/or electronic system to be protected from the noise signal, and is subject to abrupt MIT at a predetermined voltage. Accordingly, low-voltage noise can be effectively removed.
    Type: Application
    Filed: March 7, 2006
    Publication date: August 21, 2008
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Hyun-Tak Kim, Kwang-Yong Kang, Byung-Gyu Chae, Bong-Jun Kim, Yong-Wook Lee, Sun-Jin Yun, Gyung-Ock Kim
  • Publication number: 20080142900
    Abstract: Provided are an abrupt metal-insulator transition (MIT) device for bypassing super-high voltage noise to protect an electric and/or electronic system, such as, a high-voltage switch, from a super-high voltage, a high-voltage noise removing circuit for bypassing the super-high voltage noise using the abrupt MIT device, and an electric and/or electronic system including the high-voltage noise removing circuit. The abrupt MIT device includes a substrate, a first abrupt MIT structure, and a second abrupt MIT structure. The first and second abrupt MIT structures are formed on an upper surface and a lower surface, respectively, of the substrate. The high-voltage noise removing circuit includes an abrupt MIT device chain connected in parallel to the electric and/or electronic system to be protected. The abrupt MIT device chain includes at least two abrupt MIT devices serially connected to each other.
    Type: Application
    Filed: January 29, 2008
    Publication date: June 19, 2008
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Hyun Tak KIM, Kwang Yong KANG, Bong Jun KIM, Yong Wook LEE, Sun Jin YUN, Byung Gyu CHAE, Gyung Ock KIM
  • Patent number: 7040336
    Abstract: A gas delivery system for providing a gas to manufacturing equipment includes a gas supply unit for providing the gas to the manufacturing equipment including devices to regulate the supply of gas from the gas supply unit to the manufacturing equipment. The system includes a main control unit for regulating the supply of the gas to the manufacturing equipment. The gas delivery system includes a supplemental control unit which receives an emergency shutdown signal from the main control unit for closing off the supply of gas in response to a malfunction of the main control unit and generates a signal for maintaining a gas flow to operate the manufacturing equipment until the cause of the malfunction has been determined. With the system, an unnecessary emergency shutdown of gas supply to semiconductor manufacturing equipment in response to a malfunction of a main controller can be prevented.
    Type: Grant
    Filed: September 18, 2003
    Date of Patent: May 9, 2006
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yu-kweon Kim, Seung-ki Chae, Jai-kang Jeon, Young-seok Roh, Yong-wook Lee
  • Publication number: 20040123907
    Abstract: A gas delivery system for providing a gas to manufacturing equipment includes a gas supply unit for providing the gas to the manufacturing equipment including devices to regulate the supply of gas from the gas supply unit to the manufacturing equipment. The system includes a main control unit for regulating the supply of the gas to the manufacturing equipment. The gas delivery system includes a supplemental control unit which receives an emergency shutdown signal from the main control unit for closing off the supply of gas in response to a malfunction of the main control unit and generates a signal for maintaining a gas flow to operate the manufacturing equipment until the cause of the malfunction has been determined. With the system, an unnecessary emergency shutdown of gas supply to semiconductor manufacturing equipment in response to a malfunction of a main controller can be prevented.
    Type: Application
    Filed: September 18, 2003
    Publication date: July 1, 2004
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Yu-Kweon Kim, Seung-Ki Chae, Jai-Kang Jeon, Young-Seok Roh, Yong-Wook Lee
  • Publication number: 20030112581
    Abstract: Disclosed is an electric double layer capacitor, including a unit cell of completely combined polarizable electrodes and metal cases, and a fabrication method thereof. The method includes the steps of pitting or etching any one face of a metal substrate made of the same material as the metal cases to form a plurality of indentations, coating slurry of an electrode material consisting mainly of an activated carbon powder onto the indented face of the metal substrate, compressing the coated face by use of a heating roll to afford the polarizable electrodes, and welding the polarizable electrodes and the metal cases after aligning the centers thereof with each other. In the thusly fabricated electric double layer capacitor, the electrode material of the activated carbon powder is combined with the metal case through the metal substrate adhered to the metal case by welding.
    Type: Application
    Filed: December 16, 2002
    Publication date: June 19, 2003
    Inventors: Kyeong-Tae Kwon, Yong-Wook Lee, An-Soo Kang, Kyong-Min Kim