Patents by Inventor Yong Yan

Yong Yan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10840346
    Abstract: Embodiments include Multiple Gate Field-Effect Transistors (MuGFETs) and methods of forming them. In an embodiment, a structure includes a substrate, a fin, masking dielectric layer portions, and a raised epitaxial lightly doped source/drain (LDD) region. The substrate includes the fin. The masking dielectric layer portions are along sidewalls of the fin. An upper portion of the fin protrudes from the masking dielectric layer portions. A first spacer is along a sidewall of a gate structure over a channel region of the fin. A second spacer is along the first spacer. The raised epitaxial LDD region is on the upper portion of the fin, and the raised epitaxial LDD region adjoins a sidewall of the first spacer and is disposed under the second spacer. The raised epitaxial LDD region extends from the upper portion of the fin in at least two laterally opposed directions and a vertical direction.
    Type: Grant
    Filed: September 12, 2019
    Date of Patent: November 17, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yong-Yan Lu, Hou-Yu Chen, Shyh-Horng Yang
  • Patent number: 10828937
    Abstract: Disclosed herein are copolymers end-functionalized with functionalized silanes of specified structure, rubber compositions comprising the copolymer, and related processes for preparing the end-functionalized copolymer. The present disclosure also relates to tires having at least one component (e.g., a tread) containing the end-functionalized copolymer or a rubber composition thereof. The copolymer comprises 55-80% by weight of a conjugated diene monomer and 20-45% by weight of an aromatic vinyl monomer lacking any nitrogen substitution on its aromatic ring, wherein the total amount of conjugated diene monomer and aromatic vinyl monomer comprise 100% (of the total monomers in the copolymer), and the end-functionalization comprises at least one group having formula (I).
    Type: Grant
    Filed: June 30, 2016
    Date of Patent: November 10, 2020
    Assignee: Bridgestone Corporation
    Inventor: Yuan-Yong Yan
  • Patent number: 10815328
    Abstract: An ethylenically unsaturated polymer includes at a terminus the radical of an allylic compound that includes a functional group free of active hydrogen atoms that is bonded to the allylic C atom through a S, P, Si or Sn atom and a vinyl aromatic compound. The polymer can be used as a component of a variety of elastomeric compounds used in the production of vulcanizates.
    Type: Grant
    Filed: October 8, 2016
    Date of Patent: October 27, 2020
    Assignee: Bridgestone Corporation
    Inventors: Yuan-Yong Yan, David M. Roggeman
  • Patent number: 10819976
    Abstract: A video encoding method eliminates the need for back channel feedback by using long-term reference frames for recovering data transmission errors. A videoconferencing endpoint captures image data and designates a first frame as a long term reference (LTR) frame. Subsequent intra frames us the LTR frame for reference. When a new LTR frame is designated, subsequent frames use the newly designated LTR frame for reference only after it is determined that the newly designated LTR frame is fully operational to serve in that role.
    Type: Grant
    Filed: June 25, 2018
    Date of Patent: October 27, 2020
    Assignee: Polycom, Inc.
    Inventors: Jian Wang, Yong Yan, Kui Zhang
  • Patent number: 10807178
    Abstract: A fixing apparatus comprises a first fixing device and a second fixing device. The first fixing device has at least one first positioning groove adapted to position at least one first elongated member and fixes the at least one first elongated member. The second fixing device has at least one second positioning groove adapted to position at least one second elongated member and fixes the at least one second elongated member. Each first positioning groove is aligned with a corresponding second positioning groove so that the first elongated member fixed in the first positioning groove is axially aligned with the second elongated member fixed in the corresponding second positioning groove.
    Type: Grant
    Filed: January 11, 2018
    Date of Patent: October 20, 2020
    Assignees: Tyco Electronics (Shanghai) Co. Ltd., TE Connectivity Corporation, Measurement Specialties (Chengdu) Ltd.
    Inventors: Yingcong Deng, Lan Gong, Qian Ying, Dandan Zhang, Lvhai Hu, Yun Liu, Lin Ye, Yong Yan, Roberto Francisco-Yi Lu, Qinglong Zeng
  • Patent number: 10797052
    Abstract: A semiconductor device includes a substrate, an isolation structure over the substrate, and a first semiconductor layer over the substrate. At least a portion of the first semiconductor layer is surrounded by the isolation structure. The semiconductor device further includes a doped material layer between the isolation structure and the first semiconductor layer.
    Type: Grant
    Filed: December 17, 2018
    Date of Patent: October 6, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yong-Yan Lu, Chia-Wei Soong, Hou-Yu Chen
  • Patent number: 10773341
    Abstract: A welding system for welding a first elongated element and a second elongated element together by a laser beam that is emitted from a laser welding head after the ideal welding center point of the aligned first and second elongated elements has been positioned at a focal point of the laser beam that is emitted from the laser welding head.
    Type: Grant
    Filed: June 1, 2017
    Date of Patent: September 15, 2020
    Assignees: Tyco Electronics (Shanghai) Co., Ltd., Measurement Specialities (Chengdai) Ltd, TE Connectivity Corporation, Shenzhen AMI Technology Co., Ltd.
    Inventors: Yingcong Deng, Lan Gong, Qian Ying, Dandan Zhang, Lvhai Hu, Yun Liu, Qinglong Zeng, Yong Yan, Roberto Francisco-Yi Lu
  • Patent number: 10730985
    Abstract: Disclosed herein are a functionalized diene monomer-containing polymer containing first and second functionalizing groups, processes for preparing the functionalized polymer, and rubber compositions containing the functionalized polymer. The functionalized polymer contains polymer chains comprises of at least one conjugated diene monomer optionally in combination with at least one vinyl aromatic monomer wherein each polymer chain is functionalized at its chain end with at least the first functionalizing group and is coupled via the first functionalizing group to the second functionalizing group.
    Type: Grant
    Filed: December 19, 2017
    Date of Patent: August 4, 2020
    Assignee: Bridgestone Corporation
    Inventors: Yuan-Yong Yan, Zengquan Qin, Koichi Saito
  • Publication number: 20200155978
    Abstract: A water purifying filter cartridge structure includes: a filter cartridge main body and a filter cartridge bottom seat. The filter cartridge main body includes: a filter barrel, a filter barrel cover, a filter body, a filter chamber, and a back flow check component. The filter barrel cover is disposed on a top portion of the filter barrel. The filter body is adapted to remove impurities from water. The filter chamber is disposed in the filter barrel, and the back flow check component is disposed in the filter barrel. The back flow check component includes a first back flow check piece, a second back flow check piece, and a third back flow check piece. The first back flow check piece and the second back flow check piece are adapted to prevent back flow at the water input end.
    Type: Application
    Filed: November 14, 2019
    Publication date: May 21, 2020
    Inventors: FENG-SHUN ZHAN, DE-LIANG WANG, JIAN-YONG YAN
  • Publication number: 20200135736
    Abstract: A semiconductor device includes a substrate, a fin structure and an isolation layer formed on the substrate and adjacent to the fin structure. The semiconductor device includes a gate structure formed on at least a portion of the fin structure and the isolation layer. The semiconductor device includes an epitaxial layer including a strained material that provides stress to a channel region of the fin structure. The epitaxial layer has a first region and a second region, in which the first region has a first doping concentration of a first doping agent and the second region has a second doping concentration of a second doping agent. The first doping concentration is greater than the second doping concentration. The epitaxial layer is doped by ion implantation using phosphorous dimer.
    Type: Application
    Filed: December 23, 2019
    Publication date: April 30, 2020
    Inventors: Yu-Chang LIN, Chun-Feng NIEH, Huicheng CHANG, Hou-Yu CHEN, Yong-Yan LU
  • Patent number: 10618994
    Abstract: An ethylenically unsaturated polymer includes at a terminus the radical of a compound that is the reaction product of a secondary amine and a vinyl aromatic compound. The secondary amine portion of the compound can be a cyclic compound with N as one of its ring atoms, while the vinyl aromatic compound can include one or more substituents. The polymer can be used as a component of a variety of elastomeric compounds used in the production of vulcanizates.
    Type: Grant
    Filed: October 8, 2016
    Date of Patent: April 14, 2020
    Assignee: Bridgestone Corporation
    Inventors: Yuan-Yong Yan, David M. Roggeman
  • Publication number: 20200109242
    Abstract: Disclosed herein are terminal-functionalized polymers functionalized with silicon-containing functionalizing agents, rubber compositions including the polymers, methods for improving the cold flow resistance of a polymer, methods for improving the filler dispersion of a silica-filled rubber composition, and processes for preparing the terminal-functionalized polymer.
    Type: Application
    Filed: December 10, 2019
    Publication date: April 9, 2020
    Applicant: Bridgestone Corporation
    Inventor: Yuan-Yong Yan
  • Patent number: 10584186
    Abstract: A functionalized polymer can be prepared by a process that includes reacting (a) an ethylenically unsaturated reactant polymer which, at its terminus, includes Si-containing repeat unit(s) with (b) one or more silanes, at least one of which includes at least one primary amine, secondary amine, phosphine, hydroxyl, thiol, cyano, urea or thiourea group.
    Type: Grant
    Filed: July 22, 2016
    Date of Patent: March 10, 2020
    Assignee: Bridgestone Corporation
    Inventor: Yuan-Yong Yan
  • Patent number: 10577434
    Abstract: Disclosed herein are phosphino- and phosphate-silane functionalized polymers, methods of preparing a reactive polymer functionalized with an alkoxysilane having a phosphorous-containing group as a functionalizing reagent, the resulting polymer and vulcanizates thereof. The vulcanizates of the functionalized polymers can be used to produce vulcanized products, including tires.
    Type: Grant
    Filed: September 9, 2016
    Date of Patent: March 3, 2020
    Assignee: Bridgestone Corporation
    Inventor: Yuan-Yong Yan
  • Publication number: 20200031979
    Abstract: Disclosed herein is a coupled polymer product comprising polymer with up to four polymer chains bonded to a functionalizing compound of formula II, wherein the polymer chains are comprised of conjugated diene-containing monomers optionally in combination with vinyl aromatic monomers and further include vinyl group-functionalized silane compound of formula I bonded within the polymer chain. Also disclosed are processes for producing the coupled polymer product as well as a rubber composition containing the coupled polymer product and tire components comprising the rubber composition.
    Type: Application
    Filed: March 8, 2018
    Publication date: January 30, 2020
    Applicant: Bridgestone Corporation
    Inventors: Yuan-Yong Yan, Rita E. Cook
  • Patent number: 10532927
    Abstract: The present disclosure relates to a composition that includes, in order: a first layer that includes MAw; a second layer that includes MOyAz; and a third layer that includes MOx, where M includes a transition metal, A includes at least one of sulfur, selenium, and/or tellurium, w is between greater than zero and less than or equal to five, x is between greater than zero and less than or equal to five, y is between greater than zero and less than or equal to five, and z is between greater than zero and less than or equal to five. In some embodiments of the present disclosure, the transition metal may include at least one of molybdenum and/or tungsten. In some embodiments of the present disclosure, A may be sulfur.
    Type: Grant
    Filed: January 9, 2018
    Date of Patent: January 14, 2020
    Assignee: Alliance for Sustainable Energy, LLC
    Inventors: John Augustus Turner, Jing Gu, Jeffery Andrew Aguiar, Suzanne Ferrere, Kenneth Xerxes Steirer, Yong Yan, Chuanxiao Xiao, James Luke Young, Mowafak Al-Jassim, Nathan Richard Neale
  • Publication number: 20200006505
    Abstract: Embodiments include Multiple Gate Field-Effect Transistors (MuGFETs) and methods of forming them. In an embodiment, a structure includes a substrate, a fin, masking dielectric layer portions, and a raised epitaxial lightly doped source/drain (LDD) region. The substrate includes the fin. The masking dielectric layer portions are along sidewalls of the fin. An upper portion of the fin protrudes from the masking dielectric layer portions. A first spacer is along a sidewall of a gate structure over a channel region of the fin. A second spacer is along the first spacer. The raised epitaxial LDD region is on the upper portion of the fin, and the raised epitaxial LDD region adjoins a sidewall of the first spacer and is disposed under the second spacer. The raised epitaxial LDD region extends from the upper portion of the fin in at least two laterally opposed directions and a vertical direction.
    Type: Application
    Filed: September 12, 2019
    Publication date: January 2, 2020
    Inventors: Yong-Yan Lu, Hou-Yu Chen, Shyh-Horng Yang
  • Publication number: 20190394458
    Abstract: A video encoding method eliminates the need for back channel feedback by using long-term reference frames for recovering data transmission errors. A videoconferencing endpoint captures image data and designates a first frame as a long term reference (LTR) frame. Subsequent intra frames us the LTR frame for reference. When a new LTR frame is designated, subsequent frames use the newly designated LTR frame for reference only after it is determined that the newly designated LTR frame is fully operational to serve in that role.
    Type: Application
    Filed: June 25, 2018
    Publication date: December 26, 2019
    Inventors: Jian Wang, Yong Yan, Kui Zhang
  • Patent number: 10515966
    Abstract: A semiconductor device includes a substrate, a fin structure and an isolation layer formed on the substrate and adjacent to the fin structure. The semiconductor device includes a gate structure formed on at least a portion of the fin structure and the isolation layer. The semiconductor device includes an epitaxial layer including a strained material that provides stress to a channel region of the fin structure. The epitaxial layer has a first region and a second region, in which the first region has a first doping concentration of a first doping agent and the second region has a second doping concentration of a second doping agent. The first doping concentration is greater than the second doping concentration. The epitaxial layer is doped by ion implantation using phosphorous dimer.
    Type: Grant
    Filed: August 20, 2018
    Date of Patent: December 24, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yu-Chang Lin, Chun-Feng Nieh, Huicheng Chang, Hou-Yu Chen, Yong-Yan Lu
  • Patent number: 10516024
    Abstract: Embodiments include Multiple Gate Field-Effect Transistors (MuGFETs) and methods of forming them. In an embodiment, a structure includes a substrate, a fin, masking dielectric layer portions, and a raised epitaxial lightly doped source/drain (LDD) region. The substrate includes the fin. The masking dielectric layer portions are along sidewalls of the fin. An upper portion of the fin protrudes from the masking dielectric layer portions. A first spacer is along a sidewall of a gate structure over a channel region of the fin. A second spacer is along the first spacer. The raised epitaxial LDD region is on the upper portion of the fin, and the raised epitaxial LDD region adjoins a sidewall of the first spacer and is disposed under the second spacer. The raised epitaxial LDD region extends from the upper portion of the fin in at least two laterally opposed directions and a vertical direction.
    Type: Grant
    Filed: April 3, 2018
    Date of Patent: December 24, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yong-Yan Lu, Hou-Yu Chen, Shyh-Horng Yang