Abstract: The invention relates to methods and systems for predicting or estimating the melting temperature of duplex nucleic acids, in the presence of divalent cations, particularly duplexes of oligonucleotides which may be used as, for example, but not limited to primers or probes in PCR and/or hybridization assays. The methods and algorithms use novel formulas, having terms and coefficients that are functions of the particular nucleotide sequence, to estimate the effect of divalent cation salt conditions on the melting temperature.

Abstract: A notebook computer with a height-adjustable display unit is disclosed. The notebook computer includes a main unit, a display unit, and a height-adjusting mechanism. The height-adjusting mechanism includes a saw-toothed arm, a channel, and a locking mechanism. The saw-toothed arm is rotationally coupled to the main unit. The channel is fixed in the display unit and movably accepts the saw-toothed arm therein. The locking mechanism lock or unlock the movement of the saw-toothed arm in the channel. The height-adjusting mechanism affords adjustable support for the display unit. The height of the display unit can be adjusted as required.

Abstract: An overlay mark may include a main overlay pattern and an auxiliary overlay pattern, wherein the main overlay pattern may have an opening exposing a substrate and the auxiliary overlay pattern may be formed in the opening. The auxiliary overlay pattern may be spaced apart from a sidewall of the main overlay pattern defining the opening. The thickness ratio of the auxiliary overlay pattern to the main overlay pattern may be about 0.05:1 to about 0.30:1. Accordingly, overlay accuracy measurements may be improved using the clearer overlay mark according to example embodiments.

Abstract: Provided are a photomask and a method of fabricating a semiconductor device. The photomask includes a photomask substrate including a chip region and a scribe lane region, with an overlay mark formed in the scribe lane region. The overlay mark includes one or more sub-overlay marks. Each of the sub-overlay marks includes a plurality of unit regions sequentially connected to each other and having different widths, where the width of a given unit region is constant.

Abstract: The alignment marks formed in a scribe line of a semiconductor substrate include at least one main mark, a first sub-mark and second sub-marks. The first sub-mark is formed at a central portion of the main mark. The second sub-marks are disposed symmetrically with respect to the first sub-mark and are used for detecting asymmetry of the main mark by measuring distances between respective side edges of the main mark and the first sub-mark, and by measuring respective side edges between the main mark and each of the second sub-marks. Alternatively, the alignment marks include main outer and inner marks and a sub-mark disposed in between the main outer and inner marks. In this case, the sub-mark is used for detecting asymmetry of the main mark by measuring distances between respective side edges of the main outer mark and the sub-mark, and by measuring respective side edges between the main inner mark and the sub-mark.

Abstract: An overlay key formed in a scribe lane and used to align a circuit pattern may include a lower overlay mark formed on a metal silicide layer directly in contact with a silicon substrate. A method of forming an overlay key in a scribe lane may include providing a silicon substrate, forming a metal silicide layer to be in direct contact with the silicon substrate, and forming a lower overlay mark on the metal silicide layer.

Abstract: A notebook computer with a height-adjustable display unit is disclosed. The notebook computer includes a main unit, a display unit, and a height-adjusting mechanism. The height-adjusting mechanism includes a saw-toothed arm, a channel, and a locking mechanism. The saw-toothed arm is rotationally coupled to the main unit. The channel is fixed in the display unit and movably accepts the saw-toothed arm therein. The locking mechanism lock or unlock the movement of the saw-toothed arm in the channel. The height-adjusting mechanism affords adjustable support for the display unit. The height of the display unit can be adjusted as required.

Abstract: A mask structure may include a first mask pattern and a second mask pattern formed on an object. When the object includes a first material, the first and the second mask patterns may include a second material and a third material, respectively. The second mask pattern may have at least two openings that expose portions of the object adjacent to sides of the first mask pattern. Because the mask structure has the first and the second mask patterns, desired structures, for example, recesses, trenches, contact holes or patterns may be more precisely formed on or through the object. For example, the first mask pattern may protect the object in an etching process for forming contact holes so that the contact holes may not be connected to each other, for example, when the contact holes have bar shapes or line shapes.

Abstract: A method for preparing powder granules by a liquid condensation process comprising preparing a slurry by mixing powders, a binding agent and a binding agent soluble solvent, dropping the slurry to a binding agent insoluble solvent to fix the binding agent so that the binding agent can not be released to a surface of a droplet of the slurry, coagulating the droplet by solvent exchange between the soluble solvent inside the droplet and the insoluble solvent at the surface of the droplets, and separating the coagulated droplet from the insoluble solvent, drying it and completely removing a residual solvent.

Abstract: A method of manufacturing a pattern structure and a method of forming a trench using the same are provided. A mask pattern structure having mask patterns spaced apart from one another may be formed on a layer. The mask pattern structure may be divided into a first region having a first pattern density and a second region having a second pattern density higher than the first pattern density. The layer may be etched using the mask pattern structure as an etching mask to form first sidewalls positioned under the first region and second sidewalls positioned under the second region. The first sidewall may have a first profile that may be substantially vertical. The second sidewall may have a second profile of which an interval between the second sidewalls becomes narrower toward lower portions of the second sidewalls.

Abstract: A glass plate cutting machine using a laser beam is provided to solve problems, such as uneven glass section and slanting cutting. By using the glass plate cutting machine of the current invention, the glass plate is irradiated with a first carbon dioxide laser beam of 0.05-2 joule/mm2 on a long oval shaped area of 20-200 mm2 according to an expected cutting line thereof, and immediately cooled with water, to generate a scribe line, which is then further irradiated with a second carbon dioxide laser beam of 0.1-0.5 joule/mm? on the area of 20-200 mm2 thus obtaining a superior glass section.

Abstract: A semiconductor device for reinforcing a substructure of a bond pad and a method for fabricating the same are provided. According to an embodiment, a semiconductor device for reinforcing a substructure of a bond pad comprises a semiconductor substrate and a substructure formed on the semiconductor substrate. The semiconductor device further includes an interlevel dielectric layer formed on the substructure. The interlevel dielectric layer includes a contact opening formed therein. The contact opening comprises a plurality of separate dots connected to each other. A contact plug is formed in the contact opening.

Abstract: A semiconductor device for reinforcing a substructure of a bond pad and a method for fabricating the same are provided. According to an embodiment, a semiconductor device for reinforcing a substructure of a bond pad comprises a semiconductor substrate and a substructure formed on the semiconductor substrate. The semiconductor device further includes an interlevel dielectric layer formed on the substructure. The interlevel dielectric layer includes a contact opening formed therein. The contact opening comprises a plurality of separate dots connected to each other. A contact plug is formed in the contact opening.

Abstract: A method for preparing powder granules by a liquid condensation process comprising preparing a slurry by mixing powders, a binding agent and a binding agent soluble solvent, dropping the slurry to a binding agent insoluble solvent to fix the binding agent so that the binding agent can not be released to a surface of a droplet of the slurry, coagulating the droplet by solvent exchange between the soluble solvent inside the droplet and the insoluble solvent at the surface of the droplets, and separating the coagulated droplet from the insoluble solvent, drying it and completely removing a residual solvent.

Abstract: An improved apparatus for automatically measuring the viscosity of a sample liquid is disclosed. The apparatus comprises a plurality of viscosimeter tubes mounted in a constant temperature bath, a plurality of vessels adapted for containing the sample liquid, a valve system for controlling the injection and the removal of the sample liquid into and from the viscosimeter tubes and the ascent and descent of the sample liquid in the viscosimeter tubes, a driving circuitry for the valve system, a photosensing device for sensing the meniscus of the liquid at predetermined indication marks of the viscosimeter tubes and a system of measuring the flow time of the sample liquid between two predetermined marks and computing the viscosity of the liquid based on the measured flow time.