Abstract: The disclosed mold includes recessed parts which have a shape corresponding to embossed portions of the barrier rib to be fabricated, and protruding parts which have a shape corresponding to depressed portions of the barrier rib to be fabricated, protrude adjacent to the recessed parts, and are tapered. The protruding parts and the recessed parts are arranged at regular intervals. It is possible to simply fabricate the two-layered barrier rib for inkjet application through a single embossing process at low cost using the mold for fabricating the barrier rib of the present invention.

Abstract: A solar cell including: a semiconductor substrate, a passivation film disposed on a side of the semiconductor substrate, a protective layer disposed on a side of the passivation film opposite the semiconductor substrate, and an electrode disposed on a side of the protective layer opposite the passivation film, wherein the electrode includes a product of a conductive paste including glass frit and a conductive material, and wherein the protective layer includes a material having an absolute value of a Gibb's free energy which is less than an absolute value of a Gibb's free energy of each component of the glass frit.

Abstract: Example methods may provide a thin film etching method. Example thin film etching methods may include forming a Ga—In—Zn—O film on a substrate, forming a mask layer covering a portion of the Ga—In—Zn—O film, and etching the Ga—In—Zn—O film using the mask layer as an etch barrier, wherein an etching gas used in the etching includes chlorine. The etching gas may further include an alkane (CnH2n+2) and H2 gas. The chlorine gas may be, for example, Cl2, BCl3, and/or CCl3, and the alkane gas may be, for example, CH4.

Abstract: Provided are a non-volatile memory device and a method of fabricating the same. The non-volatile memory device may include a substrate and a plurality of semiconductor pillars on the substrate. A plurality of control gate electrodes may be stacked on the substrate and intersecting the plurality of semiconductor pillars. A plurality of dummy electrodes may be stacked adjacent to the plurality of control gate electrodes on the substrate, the plurality of dummy electrodes being spaced apart from the plurality of control gate electrodes. A plurality of via plugs may be connected to the plurality of control gate electrodes. A plurality of wordlines may be on the plurality of via plugs. Each of the plurality of via plugs may penetrate a corresponding one of the plurality of control gate electrodes and at least one of the plurality of dummy electrodes.

Abstract: Provided are phase change random access memory (PRAM) devices and methods of operating the same. The PRAM device may include a switching device, a lower electrode, a lower electrode contact layer, a phase change layer and/or an upper electrode. The lower electrode may be connected to a switching device. The lower electrode contact layer may be formed on the lower electrode. The phase change layer, which may include a bottom surface that contacts an upper surface of the lower electrode contact layer, may be formed on the lower electrode contact layer. The upper electrode may be formed on the phase change layer. The lower electrode contact layer may be formed of a material layer having an absolute value of a Seebeck coefficient higher than TiAlN. The Seebeck coefficient of the lower electrode contact layer may be negative. The material layer may have lower heat conductivity and/or approximately equivalent electrical resistance as TiAlN.

Abstract: Example methods may provide a thin film etching method. Example thin film etching methods may include forming a Ga—In—Zn—O film on a substrate, forming a mask layer covering a portion of the Ga—In—Zn—O film, and etching the Ga—In—Zn—O film using the mask layer as an etch barrier, wherein an etching gas used in the etching includes chlorine. The etching gas may further include an alkane (CnH2n+2) and H2 gas. The chlorine gas may be, for example, Cl2, BCl3, and/or CCl3, and the alkane gas may be, for example, CH4.

Abstract: A method for treating a polymeric optical element which includes the steps of mounting a polymeric optical element into a chamber, injecting a compressed gas as an annealing medium into the chamber and annealing the polymeric optical element and removing the annealing medium from the chamber. The present method provides a new way of preventing disadvantageous molecular orientation and residual stress which causes a deterioration in the optical properties of the polymeric optical element.

Abstract: A soluble polyimide for a photosensitive polyimide precursor and a photosensitive polyimide precursor composition including the soluble polyimide, wherein the soluble polyimide contains hydroxyl and acetyl moieties and at least one reactive end-cap group at one or both ends of the polymer chain. The photosensitive polyimide precursor composition comprises the soluble polyimide, a polyamic acid containing at least one reactive end-cap group at one or both ends of the polymer chain, a photo acid generator (PAG) and optionally a dissolution inhibitor. Since the polyimide film of the present invention exhibits excellent thermal, electric and mechanical properties, it can be used as insulating films or protective films for various electronic devices. A pattern with a high resolution may be formed even on the polyamide film having a thickness of above 10 ?m.

Abstract: Provided are phase change random access memory (PRAM) devices and methods of operating the same. The PRAM device may include a switching device, a lower electrode, a lower electrode contact layer, a phase change layer and/or an upper electrode. The lower electrode may be connected to a switching device. The lower electrode contact layer may be formed on the lower electrode. The phase change layer, which may include a bottom surface that contacts an upper surface of the lower electrode contact layer, may be formed on the lower electrode contact layer. The upper electrode may be formed on the phase change layer. The lower electrode contact layer may be formed of a material layer having an absolute value of a Seebeck coefficient higher than TiAlN. The Seebeck coefficient of the lower electrode contact layer may be negative. The material layer may have lower heat conductivity and/or approximately equivalent electrical resistance as TiAlN.

Abstract: A method for treating a polymeric optical element which includes the steps of mounting a polymeric optical element into a chamber, injecting a compressed gas as an annealing medium into the chamber and annealing the polymeric optical element and removing the annealing medium from the chamber. The present method provides a new way of preventing disadvantageous molecular orientation and residual stress which causes a deterioration in the optical properties of the polymeric optical element.

Abstract: A method for fabricating a preform for a plastic optical fiber includes filling a reactor with a reactant including a thermal polymerization initiator and a photopolymerization initiator, and simultaneously or alternatively proceeding with a thermal polymerization and a photopolymerization while rotating the reactor, thereby exhibiting improved process properties and physical properties of the preform, compared to when using only one of the initiators.

Abstract: A soluble polyimide for a photosensitive polyimide precursor and a photosensitive polyimide precursor composition including the soluble polyimide, wherein the soluble polyimide contains hydroxyl and acetyl moieties and at least one reactive end-cap group at one or both ends of the polymer chain. The photosensitive polyimide precursor composition comprises the soluble polyimide, a polyamic acid containing at least one reactive end-cap group at one or both ends of the polymer chain, a photo acid generator (PAG) and optionally a dissolution inhibitor. Since the polyimide film of the present invention exhibits excellent thermal, electric and mechanical properties, it can be used as insulating films or protective films for various electronic devices. A pattern with a high resolution may be formed even on the polyamide film having a thickness of above 10 &mgr;m.

Abstract: A polyamic ester prepared by partially substituting hydrogen atoms of carboxylic groups of a polyamic acid with acid labile groups, the polyamic ester comprising one or more repeating units represented by Formula 1, and each of at least one terminal of the polyamic ester molecule terminates with the same or different reactive end-capping monomer: wherein in Formula 1, R1 and R2 are independently a hydrogen atom, or an acid labile group; X is a tetravalent, an aromatic or an aliphatic organic group; Y is a divalent, an aromatic or an aliphatic organic group; and m is an integer equal to or greater than 1.

Abstract: A polyamic ester prepared by partially substituting hydrogen atoms of carboxylic groups of a polyamic acid with acid-dissociable groups, the polyamic ester comprising one or more repeating units represented by Formula 1, and each of at least one terminal of the polyamic ester molecule terminates with the same or different reactive end-capping monomer: 1