Abstract: A method and apparatus for determining a line angle and a line angle rotation of a grating or line feature is disclosed. An aspect of the present disclosure involves, measuring coordinate points of a first line feature using a measurement tool, determining a first slope of the first line feature from the coordinate points, and determining a first line angle from the slope of the first line feature. This process can be repeated to find a second slope of a second line feature that is adjacent to the first line feature. The slope of the first and second line features can be compared to find a line angle rotation. The line angle rotation is compared to a design specification and a stitch quality is determined.

Abstract: The present disclosure generally relates to methods of forming optical devices comprising nanostructures disposed on transparent substrates. A first process of forming the nanostructures comprises depositing a first layer of a first material on a glass substrate, forming one or more trenches in the first layer, and depositing a second layer of a second material in the one or more holes to trenches a first alternating layer of alternating first portions of the first material and second portions of the second material. The first process is repeated one or more times to form additional alternating layers over the first alternating layer. Each first portion of each alternating layer is disposed in contact with and offset a distance from an adjacent first portion in adjacent alternating layers. A second process comprises removing either the first or the second portions from each alternating layer to form the plurality of nanostructures.

Abstract: Embodiments of the present disclosure relate to bake apparatuses for handling and uniform baking of substrates and methods for the handling and the uniform baking of substrates. The bake apparatuses allow the substrates to be heated to a temperature greater than 50° C. without bowing of about 1 mm to about 2 mm from the edge of the substrates to the center of the substrates. The bake apparatuses heat the substrates uniformly or substantially uniformly to improve substrate quality.

Abstract: Embodiments of the present disclosure include a die system and a method of comparing alignment vectors. The die system includes a plurality of dies arranged in a desired pattern. An alignment vector, such as a die vector, can be determined from edge features of the die. The alignment vectors can be compared to other dies or die patterns in the same system. A method of comparing dies and die patterns includes comparing die vectors and/or pattern vectors. The comparison between alignment vectors allows for fixing the die patterns for the next round of processing. The methods provided allow accurate comparisons between as-deposited edge features, such that accurate stitching of dies can be achieved.

Abstract: A method of increasing production of one or more lipoxins in a subject in need thereof comprising administering to the subject an amount of a compound having the structure: or a pharmaceutically acceptable salt or ester thereof, so as to thereby increase production of the one or more lipoxins in the subject.

Abstract: The present disclosure generally relates to methods of forming optical devices comprising nanostructures disposed on transparent substrates. A first process of forming the nanostructures comprises depositing a first layer of a first material on a glass substrate, forming one or more trenches in the first layer, and depositing a second layer of a second material in the one or more holes to trenches a first alternating layer of alternating first portions of the first material and second portions of the second material. The first process is repeated one or more times to form additional alternating layers over the first alternating layer. Each first portion of each alternating layer is disposed in contact with and offset a distance from an adjacent first portion in adjacent alternating layers. A second process comprises removing either the first or the second portions from each alternating layer to form the plurality of nanostructures.

Abstract: A method of imprinting a pattern on a substrate is provided. The method includes forming a first pattern on a plurality of masters using a method other than imprinting, the first pattern including a plurality of patterned features of varying sizes; measuring the patterned features at a plurality of locations on each of the masters; selecting a first master of the plurality of masters based on the measurements of the patterned features on each of the masters; using the first master to form a second pattern on an imprint template; and imprinting the first pattern on a first device with the imprint template.

Abstract: Embodiments of the present invention are directed to fabrication methods and resulting structures having a back-end-of-line (BEOL) single damascene (SD) top via spacer defined by pillar mandrels. In a non-limiting embodiment of the invention, a first conductive line is formed in a first dielectric layer. A mandrel is formed over the first conductive line and a spacer is formed on a sidewall of the mandrel. A portion of a second dielectric layer is recessed to expose a top surface of the spacer and a top surface of the mandrel and the mandrel is removed. The spacer prevents damage to the second dielectric layer while removing the mandrel. The mandrel is replaced with a conductive material. A first portion of the conductive material defines a via and a second portion of the conductive material defines a second conductive line. The via couples the first conductive line to the second conductive line.

Abstract: A photoresist is developed on a semiconductor wafer. The wafer is introduced into a controlled cold temperature environment and is maintained there until inelastic thermal contraction of the developed photoresist material results in reducing the critical dimension (CD) of the photoresist by not less than 10% from its value before exposure to the controlled cold temperature environment. Then the semiconductor wafer is removed from the controlled cold temperature environment.

Abstract: A method and apparatus for determining a line angle and a line angle rotation of a grating or line feature is disclosed. An aspect of the present disclosure involves, measuring coordinate points of a first line feature using a measurement tool, determining a first slope of the first line feature from the coordinate points, and determining a first line angle from the slope of the first line feature. This process can be repeated to find a second slope of a second line feature that is adjacent to the first line feature. The slope of the first and second line features can be compared to find a line angle rotation. The line angle rotation is compared to a design specification and a stitch quality is determined.

Abstract: Aspects of the present disclosure relate generally to methods and apparatus of processing transparent substrates, such as glass substrates. In one implementation, a film stack for optical devices includes a glass substrate including a first surface and a second surface. The film stack includes a device function layer formed on the first surface, a hard mask layer formed on the device function layer, and a substrate recognition layer formed on the hard mask layer. The hard mask layer includes one or more of chromium, ruthenium, or titanium nitride. The film stack includes a backside layer formed on the second surface. The backside layer formed on the second surface includes one or more of a conductive layer or an oxide layer.

Abstract: First lithography and etching are carried out on a semiconductor structure to provide a first intermediate semiconductor structure having a first set of surface features corresponding to a first portion of desired fin formation mandrels. Second lithography and etching are carried out on the first intermediate structure, using a second mask, to provide a second intermediate semiconductor structure having a second set of surface features corresponding to a second portion of the mandrels. The second set of surface features are unequally spaced from the first set of surface features and/or the features have different pitch. The fin formation mandrels are formed in the second intermediate semiconductor structure using the first and second sets of surface features; spacer material is deposited over the mandrels and is etched back to form a third intermediate semiconductor structure having a fin pattern. Etching is carried out on same to produce the fin pattern.

Abstract: An imaging system and a method of creating composite images are provided. The imaging system includes one or more lens assemblies coupled to a sensor. When reflected light from an object enters the imaging system, incident light on the metalens filter systems creates filtered light, which is turned into composite images by the corresponding sensors. Each metalens filter system focuses the light into a specific wavelength, creating the metalens images. The metalens images are sent to the processor, wherein the processor combines the metalens images into one or more composite images. The metalens images are combined into a composite image, and the composite image has reduced chromatic aberrations.

Abstract: First lithography and etching are carried out on a semiconductor structure to provide a first intermediate semiconductor structure having a first set of surface features corresponding to a first portion of desired fin formation mandrels. Second lithography and etching are carried out on the first intermediate structure, using a second mask, to provide a second intermediate semiconductor structure having a second set of surface features corresponding to a second portion of the mandrels. The second set of surface features are unequally spaced from the first set of surface features and/or the features have different pitch. The fin formation mandrels are formed in the second intermediate semiconductor structure using the first and second sets of surface features; spacer material is deposited over the mandrels and is etched back to form a third intermediate semiconductor structure having a fin pattern. Etching is carried out on same to produce the fin pattern.

Abstract: A method of forming patterned features on a substrate is provided. The method includes positioning a plurality of masks arranged in a mask layout over a substrate. The substrate is positioned in a first plane and the plurality of masks are positioned in a second plane, the plurality of masks in the mask layout have edges that each extend parallel to the first plane and parallel or perpendicular to an alignment feature on the substrate, the substrate includes a plurality of areas configured to be patterned by energy directed through the masks arranged in the mask layout. The method further includes directing energy towards the plurality of areas through the plurality of masks arranged in the mask layout over the substrate to form a plurality of patterned features in each of the plurality of areas.

Abstract: Embodiments described herein relate to flat optical devices with a coating layer including monolayers selected from the group consisting of molybdenum disulfide (MoS2), tungsten disulfide (WS2), tungsten diselenide (WSe2), molybdenum diselenide (MoSe2), molybdenum ditelluride (MoTe2), titanium disulfide (TlS2), zirconium disulfide (ZrS2), zirconium diselenide (ZrSe2), hafnium disulfide (HfS2), platinum disulfide (PtS2), tin disulfide (SnS2), or combinations thereof. The coating layer is disposed over a plurality of optical device structures of the optical device. The monolayers may alternate between the materials to form the coating layer or may be a uniform coating layer of a single material. The coating layer is disposed over each optical device structure of the plurality of optical device structures.

Abstract: First lithography and etching are carried out on a semiconductor structure to provide a first intermediate semiconductor structure having a first set of surface features corresponding to a first portion of desired fin formation mandrels. Second lithography and etching are carried out on the first intermediate structure, using a second mask, to provide a second intermediate semiconductor structure having a second set of surface features corresponding to a second portion of the mandrels. The second set of surface features are unequally spaced from the first set of surface features and/or the features have different pitch. The fin formation mandrels are formed in the second intermediate semiconductor structure using the first and second sets of surface features; spacer material is deposited over the mandrels and is etched back to form a third intermediate semiconductor structure having a fin pattern. Etching is carried out on same to produce the fin pattern.

Abstract: A system, software application, and method for optical device metrology of optical device patterns formed from lithography stitching are provided. In one example, the method includes creating a stitched design file comprising images of a plurality of masks; defining target coordinates for each of the plurality of masks in the stitched design file; defining an alignment mark for the stitched design file; capturing images of an optical device pattern at each of the target coordinates; comparing the captured images of the optical device pattern at each of the target coordinates to virtual images of the stitched design file at each of the target coordinates; and determining whether the optical device pattern at each of the target coordinates meets a threshold value.

Abstract: The present disclosure generally relates to methods of forming optical devices comprising nanostructures disposed on transparent substrates. A first process of forming the nanostructures comprises depositing a first layer of a first material on a glass substrate, forming one or more trenches in the first layer, and depositing a second layer of a second material in the one or more holes to trenches a first alternating layer of alternating first portions of the first material and second portions of the second material. The first process is repeated one or more times to form additional alternating layers over the first alternating layer. Each first portion of each alternating layer is disposed in contact with and offset a distance from an adjacent first portion in adjacent alternating layers. A second process comprises removing either the first or the second portions from each alternating layer to form the plurality of nanostructures.

Abstract: A method for aligning a substrate for fabrication of an optical device is disclosed that includes receiving a substrate having a first side and a second side opposite the first side, the first side of the substrate being oriented towards a scanner, the substrate having an alignment mark formed on the first side of the substrate, scanning the alignment mark with the scanner, and fabricating a first pattern for a first optical device on the first side of the substrate. The method includes positioning the substrate such that the second side is oriented toward the scanner, scanning the alignment mark on the first side with the scanner, through the second side, and fabricating a second pattern for a fourth optical device on the second side of the substrate.