Patents by Inventor Yongchao HUANG

Yongchao HUANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210167181
    Abstract: A thin film transistor and a manufacturing method thereof, an array substrate and a display device are provided. The thin film transistor is formed on a substrate and includes: an active layer on the substrate, the active layer including a source region, a drain region, and a channel region between the source region and the drain region; a first gate electrode on a side of the active layer away from the substrate; and a second gate electrode on a side of the first gate electrode away from the substrate, wherein a thickness of the first gate electrode is smaller than a thickness of the second gate electrode.
    Type: Application
    Filed: December 18, 2019
    Publication date: June 3, 2021
    Inventors: Tongshang Su, Dongfang Wang, Qinghe Wang, Ning Liu, Yongchao Huang, Yu Ji, Zheng Wang, Liangchen Yan
  • Publication number: 20210159279
    Abstract: An array substrate is provided, including a base substrate, a semiconductor active layer, a gate electrode, a source electrode, and a drain electrode that are sequentially provided, and further including a first insulating layer, a second insulating layer, a third insulating layer, at least one first via, and at least one second via. Each first via penetrates through the third insulating layer, and in each pixel unit with plural chromatic color resists, each first via is between adjacent two chromatic color resists and filled by one of the adjacent two chromatic color resists. Each second via penetrates through the second insulating layer, the at least one second via is in one-to-one correspondence with the at least one first via, each second via is filled by a chromatic color resist having a same color as that of the chromatic color resist in the corresponding first via.
    Type: Application
    Filed: April 22, 2020
    Publication date: May 27, 2021
    Inventors: Jun LIU, Liangchen YAN, Bin ZHOU, Wei LI, Tongshang SU, Yongchao HUANG, Biao LUO, Xuehai GUI
  • Publication number: 20210158165
    Abstract: Implementations of the present specification provide a model-based prediction method and apparatus. The method includes: a model running environment receives an input tensor of a machine learning model; the model running environment sends a table query request to an embedding running environment, the table query request including the input tensor, to request low-dimensional conversion of the input tensor; the model running environment receives a table query result returned by the embedding running environment, the table query result being obtained by the embedding running environment by performing embedding query and processing based on the input tensor; and the model running environment inputs the table query result into the machine learning model, and runs the machine learning model to complete model-based prediction.
    Type: Application
    Filed: February 2, 2021
    Publication date: May 27, 2021
    Inventors: Yongchao LIU, Sizhong LI, Guozhen PAN, Jianguo XU, Qiyin HUANG
  • Patent number: 10976281
    Abstract: Embodiments of the present disclosure relate to the field of electronic sensing technologies, and provide a chemical sensing unit, a chemical sensor, and a chemical sensing device. The chemical sensing unit includes a thin film transistor arranged on a substrate, and a light emitting diode coupled to the thin film transistor. The thin film transistor includes a semiconductor active layer, a source, and a drain, and the semiconductor active layer is mainly composed of a chemically sensitive semiconductor material. The chemical sensing unit is provided with a via hole in a region between the source and the drain, such that the semiconductor active layer is exposed at a position corresponding to the via hole. The light emitting diode includes a first electrode, a light-emitting functional layer, and a second electrode which are stacked in sequence, wherein the first electrode is coupled to the drain.
    Type: Grant
    Filed: June 26, 2019
    Date of Patent: April 13, 2021
    Assignees: Hefei Xinsheng Optoelectronics Technology Co., Ltd., BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Qinghe Wang, Liangchen Yan, Dongfang Wang, Tongshang Su, Leilei Cheng, Yongchao Huang, Yang Zhang, Guangyao Li, Guangcai Yuan
  • Publication number: 20210074946
    Abstract: The present invention relates to the field of display technologies, and provides an array substrate, a manufacturing method thereof, and a display device. The array substrate includes a first electrode layer. The first electrode layer may include an indium tin oxide layer and a planarization layer. The indium tin oxide layer is disposed on a substrate and includes indium tin oxide particles; the planarization layer is disposed on a side of the indium tin oxide layer away from the substrate, and fills at least part of gaps between the indium tin oxide particles, and the planarization layer can conduct electricity.
    Type: Application
    Filed: March 2, 2020
    Publication date: March 11, 2021
    Inventors: Leilei CHENG, Tongshang SU, Qinghe WANG, Guangyao LI, Wei SONG, Ning LIU, Yang ZHANG, Yongchao HUANG
  • Publication number: 20210066352
    Abstract: An array substrate includes an insulation layer and one or more stepped holes each penetrating through the insulation layer in a direction perpendicular to the insulation layer. Each stepped hole includes a first hole and a second hole under the first hole, a radius of the first hole at a bottom is a first radius, a radius of the second hole at a top is a second radius which is substantially smaller than the first radius, and a difference between the first radius and the second radius is 0.2 ?m to 0.6 ?m.
    Type: Application
    Filed: July 2, 2020
    Publication date: March 4, 2021
    Inventors: Leilei CHENG, Bin ZHOU, Jun LIU, Luke DING, Qinghe WANG, Yongchao HUANG
  • Publication number: 20210066398
    Abstract: A display panel has pixel regions each includes sub-pixel regions, one of the sub-pixel regions is a white sub-pixel region, and remaining sub-pixel regions are color sub-pixel regions. The display panel includes signal lines and at least one filter group. The signal lines include two signal lines, a portion of each of the two signal lines is disposed between one white sub-pixel region and an adjacent color sub-pixel region, and there is a space between the two signal lines. Each filter group includes a first filter block and a second filter block, and a light transmission wavelength range of the first filter block does not overlap with that of the second filter block. An overlapping portion of the first filter block and the second filter block that are in one filter group covers a portion of the space disposed between the white sub-pixel region and the adjacent color sub-pixel region.
    Type: Application
    Filed: May 5, 2019
    Publication date: March 4, 2021
    Inventors: Yongchao HUANG, Jun CHENG, Jun LIU
  • Publication number: 20200411619
    Abstract: An array substrate, a manufacturing method thereof, and a display device are provided. The array substrate includes: a base substrate; a first signal line on the base substrate; a first buffer layer provided on the base substrate and covering the first signal line; a second signal line on a side of the first buffer layer facing away from the base substrate; a first insulating layer provided on the base substrate and covering the second signal line; and a thin film transistor on a side of the first insulating layer facing away from the base substrate, the thin film transistor including a gate electrode, a source electrode and a drain electrode. A thickness of the first signal line is greater than that of the gate electrode, and a thickness of the second signal line is greater than that of the source electrode or the drain electrode.
    Type: Application
    Filed: June 18, 2020
    Publication date: December 31, 2020
    Inventors: Yongchao Huang, Jun Cheng, Dongfang Wang, Jun Liu, Leilei Cheng, Liangchen Yan
  • Patent number: 10818798
    Abstract: A method for manufacturing a thin film transistor includes forming a light shielding layer and a buffer layer covering the light shielding layer on a substrate. The method includes forming an active layer including a peripheral region and a channel region. The method includes forming a gate insulating layer covering the channel region and forming a contact hole exposing the light shielding layer. The method includes forming a source region and a drain region disposed on both sides of the channel region. The method includes forming an electrode layer including a gate electrode, a source electrode and a drain electrode spaced apart one another. The method includes forming a dielectric layer covering the gate electrode, the source electrode, the drain electrode and the buffer layer.
    Type: Grant
    Filed: May 13, 2019
    Date of Patent: October 27, 2020
    Assignees: Hefei Xinsheng Optoelectronics Technology Co., Ltd., BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Yingbin Hu, Ce Zhao, Yuankui Ding, Jun Wang, Jun Liu, Guangyao Li, Yongchao Huang, Wei Li, Liangchen Yan
  • Patent number: 10777683
    Abstract: A thin film transistor, a method of manufacturing the same, an array substrate and a display panel are disclosed. The thin film transistor includes a light blocking layer, an electrode layer, and a combination layer, which are sequentially stacked. The electrode layer includes a gate electrode, a source electrode and a drain electrode which are separated from one another, and the gate electrode is located between the source electrode and the drain electrode. The light blocking layer includes a first portion of which an orthogonal projection is located between an orthogonal projection of the gate electrode and an orthogonal projection of the source electrode; and a second portion of which an orthogonal projection is located between the orthogonal projection of the gate and an orthogonal projection of the drain. The combination layer includes an active layer.
    Type: Grant
    Filed: May 6, 2019
    Date of Patent: September 15, 2020
    Assignees: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Yang Zhang, Luke Ding, Bin Zhou, Haitao Wang, Ning Liu, Jingang Fang, Yongchao Huang, Liangchen Yan
  • Publication number: 20200251545
    Abstract: Provided are a display panel and a manufacturing method thereof and a display device. The display panel includes a substrate and pixel units formed on the substrate, wherein, along a thickness direction of the display panel, at least one of the pixel units includes a driving and light filtering structure and a light emitting element formed at a side of the driving and light filtering structure facing away from the substrate, and wherein the driving and light filtering structure includes a driving part and a light filtering part, and the light filtering part is disposed in an accommodating hole penetrating through an insulating layer in the driving part along the thickness direction.
    Type: Application
    Filed: December 5, 2019
    Publication date: August 6, 2020
    Inventors: Jun LIU, Liangchen YAN, Bin ZHOU, Yongchao HUANG, Luke DING, Wei LI, Biao LUO, Xuehai GUI
  • Patent number: 10734456
    Abstract: A display panel, a method for manufacturing the display panel, and a display apparatus are provided. The display panel includes a base substrate; a thin film transistor; an OLED structure formed on the thin film transistor including a first and second electrodes arranged opposite to each other and an organic light emitting layer arranged between the first and second electrodes; a light shielding layer arranged between the first electrode and the organic light emitting layer. The light shielding layer includes a first and a second light shielding layers. The first light shielding layer includes a first light shielding portion and a first opening portion corresponding to a pixel area. The second light shielding layer includes a second light shielding portion and a second opening portion corresponding to a pixel area. The second light shielding portion includes a first and second parts.
    Type: Grant
    Filed: January 31, 2019
    Date of Patent: August 4, 2020
    Assignees: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Yongchao Huang, Dongfang Wang, Jun Cheng, Min He, Bin Zhou, Ce Zhao
  • Patent number: 10680053
    Abstract: A fabrication method for fabricating a thin-film transistor includes: forming a light shielding layer on a substrate; forming a buffer layer covering the light shielding layer, and forming a semiconductor material layer stacked on a surface of the buffer layer away from the substrate; forming a through hole penetrating through the buffer layer and the semiconductor material layer; patterning the semiconductor material layer to form an active layer covering a partial region of the buffer layer; forming a gate insulator layer on a surface of the active layer away from the substrate and a gate stacked on a surface of the gate insulator layer away from the substrate; forming a source and a drain on the surface of the buffer layer away from the substrate; and forming a dielectric layer covering the gate, the source, the drain, and the buffer layer, and being recessed into the through hole to form a groove.
    Type: Grant
    Filed: June 14, 2019
    Date of Patent: June 9, 2020
    Assignees: Hefei Xinsheng Optoelectronics Technology Co., Ltd., BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Yingbin Hu, Liangchen Yan, Ce Zhao, Yuankui Ding, Yang Zhang, Yongchao Huang, Luke Ding, Jun Liu
  • Publication number: 20200168744
    Abstract: A method for manufacturing a thin film transistor includes forming a light shielding layer and a buffer layer covering the light shielding layer on a substrate. The method includes forming an active layer including a peripheral region and a channel region. The method includes forming a gate insulating layer covering the channel region and forming a contact hole exposing the light shielding layer. The method includes forming a source region and a drain region disposed on both sides of the channel region. The method includes forming an electrode layer including a gate electrode, a source electrode and a drain electrode spaced apart one another. The method includes forming a dielectric layer covering the gate electrode, the source electrode, the drain electrode and the buffer layer.
    Type: Application
    Filed: May 13, 2019
    Publication date: May 28, 2020
    Inventors: Yingbin Hu, Ce Zhao, Yuankui Ding, Jun Wang, Jun Liu, Guangyao Li, Yongchao Huang, Wei Li, Liangchen Yan
  • Publication number: 20200168687
    Abstract: A fabrication method for fabricating a thin-film transistor includes: forming a light shielding layer on a substrate; forming a buffer layer covering the light shielding layer, and forming a semiconductor material layer stacked on a surface of the buffer layer away from the substrate; forming a through hole penetrating through the buffer layer and the semiconductor material layer; patterning the semiconductor material layer to form an active layer covering a partial region of the buffer layer; forming a gate insulator layer on a surface of the active layer away from the substrate and a gate stacked on a surface of the gate insulator layer away from the substrate; forming a source and a drain on the surface of the buffer layer away from the substrate; and forming a dielectric layer covering the gate, the source, the drain, and the buffer layer, and being recessed into the through hole to form a groove.
    Type: Application
    Filed: June 14, 2019
    Publication date: May 28, 2020
    Inventors: Yingbin HU, Liangchen YAN, Ce ZHAO, Yuankui DING, Yang ZHANG, Yongchao HUANG, Luke DING, Jun LIU
  • Patent number: 10615192
    Abstract: A method of manufacturing an array substrate assembly, an array substrate assembly manufactured by the method, and a display panel including the array substrate assembly are disclosed. The method includes: providing a substrate, the substrate having a first region as a preset semiconductor-removed region, and a second region as a remaining region; forming, in the first region of the substrate, a semiconductor removing layer corrodible by a corrosive solution; and forming a semiconductor layer on the substrate formed with the semiconductor removing layer, so that the semiconductor layer covers the semiconductor removing layer.
    Type: Grant
    Filed: July 9, 2018
    Date of Patent: April 7, 2020
    Assignees: BOE TECHNOLOGY GROUP CO, LTD., HEFEI, XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Yuankui Ding, Guangcai Yuan, Ce Zhao, Bin Zhou, Jun Cheng, Zhaofan Liu, Yingbin Hu, Yongchao Huang
  • Patent number: 10615196
    Abstract: A method for fabricating a contact hole of an array substrate, an array substrate and a display device are disclosed, the method includes: coating a topmost layer with a first photoresist coating, exposing but not developing a part of the first photoresist coating, corresponding to a first contact hole, in an exposure process; coating the first photoresist coating with a second photoresist coating, exposing a part of the second photoresist coating, corresponding to the first contact hole, in an exposure process; developing and removing exposed parts of the first and second photoresist coatings, wherein a size of a removed part of the second photoresist coating, corresponding to the first contact hole, is smaller than a size of a removed part of the first photoresist coating, corresponding to the first contact hole; and removing parts of functional film layers, corresponding to the first contact hole, to form the first contact hole.
    Type: Grant
    Filed: July 17, 2018
    Date of Patent: April 7, 2020
    Assignees: BOE Technology Group Co., Ltd., Hefei Xinsheng Optoelectronics Technology Co., Ltd.
    Inventors: Jun Liu, Yongchao Huang, Tongshang Su, Leilei Cheng, Jun Wang, Ning Liu
  • Publication number: 20200075773
    Abstract: A thin film transistor, a method of manufacturing the same, an array substrate and a display panel are disclosed. The thin film transistor includes a light blocking layer, an electrode layer, and a combination layer, which are sequentially stacked. The electrode layer includes a gate electrode, a source electrode and a drain electrode which are separated from one another, and the gate electrode is located between the source electrode and the drain electrode. The light blocking layer includes a first portion of which an orthogonal projection is located between an orthogonal projection of the gate electrode and an orthogonal projection of the source electrode; and a second portion of which an orthogonal projection is located between the orthogonal projection of the gate and an orthogonal projection of the drain. The combination layer includes an active layer.
    Type: Application
    Filed: May 6, 2019
    Publication date: March 5, 2020
    Applicants: Hefei Xinsheng Optoelectronics Technology Co., Ltd., BOE Technology Group Co., Ltd.
    Inventors: Yang Zhang, Luke Ding, Bin Zhou, Haitao Wang, Ning Liu, Jingang Fang, Yongchao Huang, Liangchen Yan
  • Publication number: 20200054417
    Abstract: The overload protection device used on a high-speed dental handpiece includes a valve body, a piston, an elastic member, and a valve plug. The valve body is provided with an air chamber and an air intake passage in communication with each other. The piston is arranged in the air chamber. The valve plug is arranged at an end of the air chamber away from the air intake passage and is connected with the valve body. The elastic member is arranged between the piston and the valve plug. An outer surface of the valve body is provided with a plurality of air discharging holes which is in communication with the air chamber. The piston is capable of opening or closing the air discharging holes when moving vertically within the air chamber. The present invention further discloses a high-speed dental handpiece with an overload protection device.
    Type: Application
    Filed: October 12, 2017
    Publication date: February 20, 2020
    Inventors: Xunxian WU, Wei LI, Hongcan WANG, Yongchao HUANG, Zhaolin LI, Qingjian DENG
  • Publication number: 20200033290
    Abstract: Embodiments of the present disclosure relate to the field of electronic sensing technologies, and provide a chemical sensing unit, a chemical sensor, and a chemical sensing device. The chemical sensing unit includes a thin film transistor arranged on a substrate, and a light emitting diode coupled to the thin film transistor. The thin film transistor includes a semiconductor active layer, a source, and a drain, and the semiconductor active layer is mainly composed of a chemically sensitive semiconductor material. The chemical sensing unit is provided with a via hole in a region between the source and the drain, such that the semiconductor active layer is exposed at a position corresponding to the via hole. The light emitting diode includes a first electrode, a light-emitting functional layer, and a second electrode which are stacked in sequence, wherein the first electrode is coupled to the drain.
    Type: Application
    Filed: June 26, 2019
    Publication date: January 30, 2020
    Inventors: Qinghe WANG, Liangchen YAN, Dongfang WANG, Tongshang SU, Leilei CHENG, Yongchao HUANG, Yang ZHANG, Guangyao LI, Guangcai YUAN