Abstract: An array substrate is provided, including a base substrate, a semiconductor active layer, a gate electrode, a source electrode, and a drain electrode that are sequentially provided, and further including a first insulating layer, a second insulating layer, a third insulating layer, at least one first via, and at least one second via. Each first via penetrates through the third insulating layer, and in each pixel unit with plural chromatic color resists, each first via is between adjacent two chromatic color resists and filled by one of the adjacent two chromatic color resists. Each second via penetrates through the second insulating layer, the at least one second via is in one-to-one correspondence with the at least one first via, each second via is filled by a chromatic color resist having a same color as that of the chromatic color resist in the corresponding first via.

Abstract: A curved handpiece for dental root canal treatment forms an overall scheme of a dental curved handpiece, which is internally conductive, surface insulated, compact in structure, small in height and size and convenient to repair. A dental root canal length measuring function can be realized accurately, safely and stably, and a stable two-in-one function of combining root canal preparation and dental root canal length measurement is further realized. The structure is compact as a whole, and a good visual field is provided. The risk of instrument separation or preparation step generation in the operation process of doctors is reduced, and the safety improvement is greatly guaranteed. According to the scheme, it is convenient to disassemble, repair and clean, the risk of cross infection is reduced, and the use safety and convenience effects of the present invention are further improved. The curved handpiece has great market benefits.

Abstract: A thin film transistor, including: at least one active layer pattern including a first conductive pattern, a second conductive pattern, and a semiconductor pattern; a gate on a side of the active layer pattern; a first electrode and a second electrode on a side of the gate away from the active layer pattern, and respectively electrically connected with the first conductive pattern and the second conductive pattern, a conductive shielding pattern is provided corresponding to the semiconductor pattern in at least one active layer pattern, the conductive shielding pattern is on a side of the semiconductor pattern away from the gate and is electrically connected with the first electrode, and a buffer layer is between the conductive shielding pattern and the semiconductor pattern; an orthographic projection of the conductive shielding pattern on a plane where the semiconductor pattern corresponding thereto is located at least partially covers the semiconductor pattern corresponding.

Abstract: The present invention relates to the field of display technologies, and provides an array substrate, a manufacturing method thereof, and a display device. The array substrate includes a first electrode layer. The first electrode layer may include an indium tin oxide layer and a planarization layer. The indium tin oxide layer is disposed on a substrate and includes indium tin oxide particles; the planarization layer is disposed on a side of the indium tin oxide layer away from the substrate, and fills at least part of gaps between the indium tin oxide particles, and the planarization layer can conduct electricity.

Abstract: An array substrate, a manufacturing method thereof, and a display device are provided. The array substrate includes: a base substrate; a first signal line on the base substrate; a first buffer layer provided on the base substrate and covering the first signal line; a second signal line on a side of the first buffer layer facing away from the base substrate; a first insulating layer provided on the base substrate and covering the second signal line; and a thin film transistor on a side of the first insulating layer facing away from the base substrate, the thin film transistor including a gate electrode, a source electrode and a drain electrode. A thickness of the first signal line is greater than that of the gate electrode, and a thickness of the second signal line is greater than that of the source electrode or the drain electrode.

Abstract: The present disclosure provides an array substrate, a manufacturing method thereof, and a display device including the array substrate. The array substrate includes a substrate, a first electrode on the substrate, a light-emitting layer on a side of the first electrode away from the substrate, a second electrode on a side of the light-emitting layer away from the first electrode, and an auxiliary electrode on the side of the light-emitting layer away from the first electrode and electrically connected with the second electrode.

Abstract: Provided are a display substrate and a display apparatus. The display substrate includes a base substrate, and an auxiliary cathode structure located on a side of the base substrate, the auxiliary cathode structure including a first conductive layer, an intermediate support layer, and a second conductive layer. In an implementation, a side of the intermediate support layer close to the first conductive layer includes any one or more of first protrusions and first grooves, and a side of the first conductive layer close to the intermediate support layer includes any one or more of second grooves engaged with the first protrusions and second protrusions engaged with the first grooves which are correspondingly disposed.

Abstract: An array substrate includes an insulation layer and one or more stepped holes each penetrating through the insulation layer in a direction perpendicular to the insulation layer. Each stepped hole includes a first hole and a second hole under the first hole, a radius of the first hole at a bottom is a first radius, a radius of the second hole at a top is a second radius which is substantially smaller than the first radius, and a difference between the first radius and the second radius is 0.2 ?m to 0.6 ?m.

Abstract: A display panel has pixel regions each includes sub-pixel regions, one of the sub-pixel regions is a white sub-pixel region, and remaining sub-pixel regions are color sub-pixel regions. The display panel includes signal lines and at least one filter group. The signal lines include two signal lines, a portion of each of the two signal lines is disposed between one white sub-pixel region and an adjacent color sub-pixel region, and there is a space between the two signal lines. Each filter group includes a first filter block and a second filter block, and a light transmission wavelength range of the first filter block does not overlap with that of the second filter block. An overlapping portion of the first filter block and the second filter block that are in one filter group covers a portion of the space disposed between the white sub-pixel region and the adjacent color sub-pixel region.

Abstract: Provided are a display panel and a manufacturing method thereof and a display device. The display panel includes a substrate and pixel units formed on the substrate, wherein, along a thickness direction of the display panel, at least one of the pixel units includes a driving and light filtering structure and a light emitting element formed at a side of the driving and light filtering structure facing away from the substrate, and wherein the driving and light filtering structure includes a driving part and a light filtering part, and the light filtering part is disposed in an accommodating hole penetrating through an insulating layer in the driving part along the thickness direction.

Abstract: A thin film transistor and a manufacturing method thereof, an array substrate and a display device are provided. The thin film transistor is formed on a substrate and includes: an active layer on the substrate, the active layer including a source region, a drain region, and a channel region between the source region and the drain region; a first gate electrode on a side of the active layer away from the substrate; and a second gate electrode on a side of the first gate electrode away from the substrate, wherein a thickness of the first gate electrode is smaller than a thickness of the second gate electrode.

Abstract: A thin film transistor, a display panel and a preparation method thereof and a display apparatus are provided. The thin film transistor includes: a substrate; a gate metal located on a side of the substrate; a gate insulating layer located on a side of the gate metal away from the substrate; an active layer located on a side of the gate insulating layer away from the substrate; a first metal oxide and a second metal oxide which are located on a side of the active layer away from the substrate and are arranged on a same layer; and a source metal and a drain metal which are located on sides of the first metal oxide and the second metal oxide away from the substrate and are arranged in a same layer.

Abstract: A display panel and a fabricating method thereof, and a displaying device. The display panel includes a substrate, a resistance reducing trace, an inter-layer-medium layer and a signal line. The substrate is divided into a plurality of sub-pixel regions and a pixel separating region. The resistance reducing trace is provided on the pixel separating region of the substrate. The inter-layer-medium layer is provided on the substrate, and the inter-layer-medium layer has an opening exposing the resistance reducing trace. The signal line is provided within the opening, the signal line is connected to the resistance reducing trace, the signal line is distributed in a column direction along the display panel, and in a row direction along the display panel, a width of the opening is greater than or equal to a width of the signal line.

Abstract: The overload protection device used on a high-speed dental handpiece includes a valve body, a piston, an elastic member, and a valve plug. The valve body is provided with an air chamber and an air intake passage in communication with each other. The piston is arranged in the air chamber. The valve plug is arranged at an end of the air chamber away from the air intake passage and is connected with the valve body. The elastic member is arranged between the piston and the valve plug. An outer surface of the valve body is provided with a plurality of air discharging holes which is in communication with the air chamber. The piston is capable of opening or closing the air discharging holes when moving vertically within the air chamber. The present invention further discloses a high-speed dental handpiece with an overload protection device.

Abstract: A method for controlling a charging time of a display panel includes: during t0+k?t in a (k+1)-th blanking time, writing a data voltage to a gate of a driving transistor, and detecting a voltage Vk_(j,i) of a second electrode of the driving transistor; during a t0+(k+r)?t in a (k+1+r)-th blanking time, writing the data voltage to the gate of the driving transistor, and detecting a voltage Vk+1_(j,i) of the second electrode of the driving transistor; determining whether ?Vj,i=Vk+1_ji?Vk_ji is less than or equal to a target voltage difference VT; if ?Vj,i?VT, taking the T=t0+k?t as an expected charging time of a sub-pixel; if ?Vj,i>VT, cyclically performing the charging step described above to obtain ?Vj,i=Vk+p+1_(j,i)?Vk+p_(j,i), and comparing ?Vj,i with the target voltage difference VT, until ?Vj,i?VT, taking t0+(k+p+r?1)?t as the expected charging time of the sub-pixel. p is taken from 1, and increases by 1 for each cycle.

Abstract: A method for controlling a charging time of a display panel includes: during t0+k?t in a (k+1)-th blanking time, writing a data voltage to a gate of a driving transistor, and detecting a voltage Vk_(j,i) of a second electrode of the driving transistor; during a t0+(k+r)?t in a (k+1+r)-th blanking time, writing the data voltage to the gate of the driving transistor, and detecting a voltage Vk+i_(j,i) of the second electrode of the driving transistor; determining whether ?Vj,i=Vk+1_ji?Vk_ji is less than or equal to a target voltage difference VT; if ?Vj,i?VT, taking the T=t0+k?t as an expected charging time of a sub-pixel; if ?Vj,i>VT, cyclically performing the charging step described above to obtain ?Vj,i=Vk+p+1_(j,i)?Vk+p_(j,i), and comparing ?Vj,i with the target voltage difference VT, until ?Vj,i?VT, taking t0+(k+p+r?1)?t as the expected charging time of the sub-pixel. p is taken from 1, and increases by 1 for each cycle.

Abstract: The present disclosure provides a display substrate, a method for manufacturing the display substrate, and a display device. The display substrate includes a first conductive line extending in a first direction on a base substrate, a second conductive line extending in a second direction crossing the first direction on the base substrate, and an insulation layer arranged between the first conductive line and the second conductive line. The display substrate further includes a buffer layer arranged between the first conductive line and the base substrate, a groove extending in the first direction is formed in the buffer layer, the first conductive line is arranged in the groove, and a surface of the first conductive line away from the base substrate is flush with a surface of the buffer layer away from the base substrate.

Abstract: A thin film transistor, a display panel and a preparation method thereof and a display apparatus are provided. The thin film transistor includes: a substrate; a gate metal located on a side of the substrate; a gate insulating layer located on a side of the gate metal away from the substrate; an active layer located on a side of the gate insulating layer away from the substrate; a first metal oxide and a second metal oxide which are located on a side of the active layer away from the substrate and are arranged on a same layer; and a source metal and a drain metal which are located on sides of the first metal oxide and the second metal oxide away from the substrate and are arranged in a same layer.

Abstract: A thin-film transistor includes: an active layer having a first side and a second side opposing to the first side; a main gate electrode spaced from the active layer on the first side, and including a conductive material; an auxiliary gate electrode spaced from the active layer on the second side, wherein the auxiliary gate electrode includes a phase change material having a phase change temperature; the auxiliary gate electrode is configured to have a transition between insulating and conductive based on a temperature of the auxiliary gate electrode; and the main gate electrode and the auxiliary gate electrode are electrically coupled to each other when the auxiliary gate electrode is conductive.

Abstract: A thin film transistor and a manufacturing method thereof, an array substrate and a display device are provided. The thin film transistor is formed on a substrate and includes: an active layer on the substrate, the active layer including a source region, a drain region, and a channel region between the source region and the drain region; a first gate electrode on a side of the active layer away from the substrate; and a second gate electrode on a side of the first gate electrode away from the substrate, wherein a thickness of the first gate electrode is smaller than a thickness of the second gate electrode.