Patents by Inventor Yongchul Ahn

Yongchul Ahn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for fabricating doped interlayer-dielectric film of semiconductor device using a plasma treatment
    Patent number: 5652187
    Abstract: The surface of a borophosphosilicate glass (BPSG) dielectric film undergoes a surface treatment, such as by plasma treatment with N.sub.2 O, N.sub.2 +NH.sub.3, N.sub.2, O.sub.2 or O.sub.3. Erosion caused by H.sub.2 SO.sub.4 boiling or by humidity absorption from the atmosphere is thereby reduced so that reflow processing at temperatures ideally below 850.degree. C. is possible and an interlayer dielectric film of excellent planarity is thus formed.
    Type: Grant
    Filed: February 1, 1994
    Date of Patent: July 29, 1997
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Changgyu Kim, Changki Hong, Uin Chung, Yongchul Ahn
  • Method for fabricating an interlayer-dielectric film of a semiconductor device by using a plasma treatment prior to reflow
    Patent number: 5405489
    Abstract: The surface of a borophosphosilicate glass (BPSG) dielectric film is changed through a surface treatment, such as by plasma etching with N.sub.2 O, O.sub.3 or O.sub.2. Erosion caused by H.sub.2 SO.sub.4 boiling or by humidity absorption from the atmosphere is thereby reduced so that reflow processing at temperatures below 850.degree. C. is possible and an interlayer dielectric film of excellent planarity is thus formed.
    Type: Grant
    Filed: October 30, 1992
    Date of Patent: April 11, 1995
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Changgyu Kim, Changki Hong, Uin Chung, Yongchul Ahn