Patents by Inventor Yongjing Lin

Yongjing Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210098581
    Abstract: Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-K dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), titanium oxide (TiO), tantalum oxide (TaO), and titanium aluminum carbide (TiAlC).
    Type: Application
    Filed: September 28, 2020
    Publication date: April 1, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Yongjing Lin, Karla M. Bernal Ramos, Shih Chung Chen, Yixiong Yang, Lin Dong, Steven C.H. Hung, Srinivas Gandikota
  • Publication number: 20200411373
    Abstract: Methods of forming semiconductor device with fluorine-incorporated metal nitride films are described. A substrate surface is exposed to a metal fluoride precursor to form a metal-fluorine species on the substrate surface. The substrate surface is exposed to a nitriding agent to react with the metal-fluorine species to form a fluorine-incorporated metal nitride film.
    Type: Application
    Filed: June 28, 2020
    Publication date: December 31, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Yixiong Yang, Srinivas Gandikota, Steven C.H. Hung, Jacqueline S. Wrench, Yongjing Lin, Susmit Singha Roy, Wei V. Tang, Shih Chung Chen
  • Publication number: 20200373404
    Abstract: Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-? dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium lanthanum nitride (TiLaN), titanium yttrium nitride (TiYN), titanium strontium nitride (TiSrN), titanium magnesium nitriride (TiMgN, titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), hafnium carbide (HfC), hafnium nitride (HfN), hafnium oxynitride (HfON), hafnium oxycarbide (HfOC), hafnium carbide aluminum (HfCAl), hafnium aluminum nitride (HfAlN), or hafnium carbonitride (HfCN).
    Type: Application
    Filed: May 18, 2020
    Publication date: November 26, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Yongjing Lin, Karla M. Bernal Ramos, Luping Li, Shih Chung Chen, Jacqueline S. Wrench, Yixiong Yang, Steven C.H. Hung, Srinivas Gandikota, Naomi Yoshida, Lin Dong
  • Publication number: 20200373318
    Abstract: Methods of forming memory structures are discussed. Specifically, methods of forming 3D NAND devices are discussed. Some embodiments form memory structures with a metal nitride barrier layer, an ?-tungsten layer, and a bulk metal material. The barrier layer comprises a TiXN or TaXN material, where X comprises a metal selected from one or more of aluminum (Al), silicon (Si), tungsten (W), lanthanum (La), yttrium (Yt), strontium (Sr), or magnesium (Mg).
    Type: Application
    Filed: May 18, 2020
    Publication date: November 26, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Jacqueline S. Wrench, Yixiong Yang, Yong Wu, Wei V. Tang, Srinivas Gandikota, Yongjing Lin, Karla M. Barnal Ramos, Shih Chung Chen
  • Publication number: 20200111885
    Abstract: Methods and apparatus for forming a semiconductor structure such as an NMOS gate electrode are described. Methods may include depositing a first capping layer having a first surface atop a first surface of a high-k dielectric layer; and depositing at least one metal layer having a first surface atop the first surface of the first capping layer, wherein the at least one metal layer includes titanium aluminum silicide material. Some methods include removing an oxide layer from the first surface of the first capping layer by contacting the first capping layer with metal chloride in an amount sufficient to remove an oxide layer. Some methods for depositing a titanium aluminum silicide material are performed by an atomic layer deposition process performed at a temperature of 350 to 400 degrees Celsius.
    Type: Application
    Filed: October 7, 2019
    Publication date: April 9, 2020
    Inventors: YONGJING LIN, SHIH CHUNG CHEN, NAOMI YOSHIDA, LIN DONG, LIQI WU, RONGJUN WANG, STEVEN HUNG, KARLA BERNAL RAMOS, YIXIONG YANG, WEI TANG, SANG-HO YU
  • Publication number: 20200071825
    Abstract: Methods of depositing a metal carbide film by exposing a substrate surface to a halide precursor and an aluminum reactant are described. The halide precursor comprises a compound of general formula (I) MXyRn, wherein M is a metal, X is a halogen selected from Cl, Br, F or I, y is from 1 to 6, R is selected from alkyl, CO, and cyclopentadienyl, and n is from 0 to 6. The aluminum reactant comprises a compound of general formula (II) Al(CH2AR1R2R3)3, wherein A is C, Si, or Ge, each of R1, R2, and R3 is independently alkyl or comprises substantially no ?-hydrogen.
    Type: Application
    Filed: August 26, 2019
    Publication date: March 5, 2020
    Inventors: Lakmal C. Kalutarage, Jeffrey W. Anthis, Mark Saly, David Thompson, Yongjing Lin, Shih Chung Chen
  • Publication number: 20200043723
    Abstract: Embodiments described herein relate to manufacturing layer stacks of oxide/nitride (ON) layers with minimized in-plane distortion (IPD) and lithographic overlay errors. A method of forming a layer stack ON layers includes flowing a first silicon-containing gas, an oxygen-containing gas, and a first dilution gas. A RF power is symmetrically applied to form a first material layer of SiO2. A second silicon-containing gas, a nitrogen-containing gas, and a second dilution gas are flowed. A second RF power is symmetrically applied to form a second material layer of Si3N4. The flowing the first silicon-containing gas, the oxygen-containing gas, and the first dilution gas, the symmetrically applying the first RF power, the flowing the second silicon-containing gas, the nitrogen-containing gas, and the second dilution gas, and the symmetrically applying the second RF power is repeated until a desired number of first material layers and second material layers make up a layer stack.
    Type: Application
    Filed: July 18, 2019
    Publication date: February 6, 2020
    Inventors: Yongjing LIN, Tza-Jing GUNG, Masaki OGATA, Yusheng ZHOU, Xinhai HAN, Deenesh PADHI, Juan Carlos ROCHA, Amit Kumar BANSAL, Mukund SRINIVASAN
  • Publication number: 20170162417
    Abstract: Techniques are disclosed for methods and apparatuses of an electrostatic chuck suitable for operating at high operating temperatures. In one example, a substrate support assembly is provided. The substrate support assembly includes a substantially disk-shaped ceramic body having an upper surface, a cylindrical sidewall, and a lower surface. The upper surface is configured to support a substrate thereon for processing the substrate in a vacuum processing chamber. The cylindrical sidewall defines an outer diameter of the ceramic body. The lower surface is disposed opposite the upper surface. An electrode is disposed in the ceramic body. A circuit is electrically connected to the electrode. The circuit includes a DC chucking circuit, a first RF drive circuit, and a second RF dive circuit. The DC chucking circuit, the first RF drive circuit and the second RF drive circuit are electrically coupled with the electrode.
    Type: Application
    Filed: December 6, 2016
    Publication date: June 8, 2017
    Inventors: Zheng John YE, Hiroji HANAWA, Juan Carlos ROCHA-ALVAREZ, Pramit MANNA, Michael Wenyoung TSIANG, Allen KO, Wenjiao WANG, Yongjing LIN, Prashant Kumar KULSHRESHTHA, Xinhai HAN, Bok Hoen KIM, Kwangduk Douglas LEE, Karthik Thimmavajjula NARASIMHA, Ziqing DUAN, Deenesh PADHI
  • Publication number: 20140061036
    Abstract: Photochemical devices having hematite photovoltaic junctions and methods for forming such devices are disclosed. In some embodiments, a photovoltaic device includes a substrate and a photovoltaic junction deposited on the substrate, the photovoltaic junction having a n-type hematite and a p-type hematite.
    Type: Application
    Filed: September 6, 2013
    Publication date: March 6, 2014
    Applicant: The Trustees of Boston College
    Inventors: Dunwei Wang, Yongjing Lin, Yang Xu
  • Publication number: 20140000697
    Abstract: Nanonet-based hematite hetero-nanostructures (100) for solar energy conversions and methods of fabricating same are disclosed. In an embodiment, a hetero-nanostructure (100) includes a plurality of connected and spaced-apart nanobeams (110) linked together at an about 90° angle, the plurality of nanobeams (110) including a conductive silicide core having an n-type photo-active hematite shell. In an embodiment, a device (1100) for splitting water to generate hydrogen and oxygen includes a first compartment (1120) having a two-dimensional hetero-nanostructure (1125), the hetero-nanostructure having a plurality of connected and spaced-apart nanobeams, each nanobeam substantially perpendicular to another nanobeam, the plurality of nanobeams including an n-type photoactive hematite shell having a conductive core; and a second compartment (1110) having a p-type material (1115), wherein the first compartment (1120) and the second compartment (1110) are separated by a semi-permeable membrane.
    Type: Application
    Filed: January 13, 2012
    Publication date: January 2, 2014
    Applicant: The Trustees of Boston College
    Inventors: Dunwei Wang, Yongjing Lin, Sa Zhou
  • Patent number: 8216436
    Abstract: The embodiments disclosed herein relate to hetero-nanostructures for efficient solar energy conversions, and more particularly to the fabrication of titanium dioxide hetero-nanostructures and methods of using same for water splitting. In an embodiment, a hetero-nanostructure includes a plurality of connected and spaced-apart nanobeams linked together at an about 90-degree angle, the plurality of nanobeams including a conductive silicide core having an n-type photoactive titanium dioxide shell.
    Type: Grant
    Filed: August 25, 2009
    Date of Patent: July 10, 2012
    Assignee: The Trustees of Boston College
    Inventors: Dunwei Wang, Yongjing Lin
  • Publication number: 20100043877
    Abstract: The embodiments disclosed herein relate to hetero-nanostructures for efficient solar energy conversions, and more particularly to the fabrication of titanium dioxide hetero-nanostructures and methods of using same for water splitting. In an embodiment, a hetero-nanostructure includes a plurality of connected and spaced-apart nanobeams linked together at an about 90-degree angle, the plurality of nanobeams including a conductive silicide core having an n-type photoactive titanium dioxide shell.
    Type: Application
    Filed: August 25, 2009
    Publication date: February 25, 2010
    Inventors: Dunwei Wang, Yongjing Lin