Abstract: Embodiments of the present disclosure generally relate chamber lids and methods of using such for gas-phase particle reduction. In an embodiment is provided a chamber lid that includes a top wall, a bottom wall, a plurality of vertical sidewalls, and an interior volume within the chamber lid defined by the top wall, the bottom wall, and the plurality of vertical sidewalls. The chamber lid further includes a plurality of air flow apertures, wherein the plurality of air flow apertures is configured to fluidly communicate air into the interior volume and out of the interior volume, and a mesh disposed on a face of at least one of the air flow apertures of the plurality of air flow apertures. In another embodiment is provided a method of processing a substrate in a substrate processing chamber, the substrate processing chamber comprising a chamber lid as described herein.

Abstract: Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-? dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium lanthanum nitride (TiLaN), titanium yttrium nitride (TiYN), titanium strontium nitride (TiSrN), titanium magnesium nitride (TiMgN, titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), hafnium carbide (HfC), hafnium nitride (HfN), hafnium oxynitride (HfON), hafnium oxycarbide (HfOC), hafnium carbide aluminum (HfCAl), hafnium aluminum nitride (HfAlN), or hafnium carbonitride (HfCN).

Abstract: Methods of forming semiconductor device with fluorine-incorporated metal nitride films are described. A substrate surface is exposed to a metal fluoride precursor to form a metal-fluorine species on the substrate surface. The substrate surface is exposed to a nitriding agent to react with the metal-fluorine species to form a fluorine-incorporated metal nitride film.

Abstract: The present disclosure provides methods for treating film layers in a substrate including positioning the substrate in a processing volume of a processing chamber. The substrate can have high aspect ratio features extending a depth from a substrate surface to a bottom surface. The feature can have a width defined by a first sidewall and a second sidewall. A film with a composition that includes metal is formed on the substrate surface and the first sidewall, the second sidewall, and the bottom surface of each feature. The film in the feature can have a seam extending substantially parallel to the first and second sidewalls. The film is annealed and exposed to an oxygen radical while converting the metal of the film to a metal oxide. The metal oxide is exposed to a hydrogen radical while converting the metal oxide to a metal fill layer.

Abstract: The present disclosure provides methods for treating film layers in a substrate including positioning the substrate in a processing volume of a processing chamber. The substrate can have high aspect ratio features extending a depth from a substrate surface to a bottom surface. The feature can have a width defined by a first sidewall and a second sidewall. A film with a composition that includes metal is formed on the substrate surface and the first sidewall, the second sidewall, and the bottom surface of each feature. The film in the feature can have a seam extending substantially parallel to the first and second sidewalls. The film is annealed and exposed to an oxygen radical while converting the metal of the film to a metal oxide. The metal oxide is exposed to a hydrogen radical while converting the metal oxide to a metal fill layer.

Abstract: Methods and apparatus for forming a semiconductor structure such as an NMOS gate electrode are described. Methods may include depositing a first capping layer having a first surface atop a first surface of a high-k dielectric layer; and depositing at least one metal layer having a first surface atop the first surface of the first capping layer, wherein the at least one metal layer includes titanium aluminum silicide material. Some methods include removing an oxide layer from the first surface of the first capping layer by contacting the first capping layer with metal chloride in an amount sufficient to remove an oxide layer. Some methods for depositing a titanium aluminum silicide material are performed by an atomic layer deposition process performed at a temperature of 350 to 400 degrees Celsius.

Abstract: Metal gate stacks and integrated methods of forming metal gate stacks are disclosed. Some embodiment comprise MoN as a PMOS work function material. Some embodiments comprise TiSiN as a high-? capping layer. Some embodiments provide improved PMOS bandedge performance. Some embodiments provide improved PMOS bandedge performance with reduced EOT penalty.

Abstract: Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-K dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), titanium oxide (TiO), tantalum oxide (TaO), and titanium aluminum carbide (TiAlC).

Abstract: Methods of forming semiconductor device with fluorine-incorporated metal nitride films are described. A substrate surface is exposed to a metal fluoride precursor to form a metal-fluorine species on the substrate surface. The substrate surface is exposed to a nitriding agent to react with the metal-fluorine species to form a fluorine-incorporated metal nitride film.

Abstract: Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-? dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium lanthanum nitride (TiLaN), titanium yttrium nitride (TiYN), titanium strontium nitride (TiSrN), titanium magnesium nitriride (TiMgN, titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), hafnium carbide (HfC), hafnium nitride (HfN), hafnium oxynitride (HfON), hafnium oxycarbide (HfOC), hafnium carbide aluminum (HfCAl), hafnium aluminum nitride (HfAlN), or hafnium carbonitride (HfCN).

Abstract: Methods of forming memory structures are discussed. Specifically, methods of forming 3D NAND devices are discussed. Some embodiments form memory structures with a metal nitride barrier layer, an ?-tungsten layer, and a bulk metal material. The barrier layer comprises a TiXN or TaXN material, where X comprises a metal selected from one or more of aluminum (Al), silicon (Si), tungsten (W), lanthanum (La), yttrium (Yt), strontium (Sr), or magnesium (Mg).

Abstract: Methods and apparatus for forming a semiconductor structure such as an NMOS gate electrode are described. Methods may include depositing a first capping layer having a first surface atop a first surface of a high-k dielectric layer; and depositing at least one metal layer having a first surface atop the first surface of the first capping layer, wherein the at least one metal layer includes titanium aluminum silicide material. Some methods include removing an oxide layer from the first surface of the first capping layer by contacting the first capping layer with metal chloride in an amount sufficient to remove an oxide layer. Some methods for depositing a titanium aluminum silicide material are performed by an atomic layer deposition process performed at a temperature of 350 to 400 degrees Celsius.

Abstract: Methods of depositing a metal carbide film by exposing a substrate surface to a halide precursor and an aluminum reactant are described. The halide precursor comprises a compound of general formula (I) MXyRn, wherein M is a metal, X is a halogen selected from Cl, Br, F or I, y is from 1 to 6, R is selected from alkyl, CO, and cyclopentadienyl, and n is from 0 to 6. The aluminum reactant comprises a compound of general formula (II) Al(CH2AR1R2R3)3, wherein A is C, Si, or Ge, each of R1, R2, and R3 is independently alkyl or comprises substantially no ?-hydrogen.

Abstract: Embodiments described herein relate to manufacturing layer stacks of oxide/nitride (ON) layers with minimized in-plane distortion (IPD) and lithographic overlay errors. A method of forming a layer stack ON layers includes flowing a first silicon-containing gas, an oxygen-containing gas, and a first dilution gas. A RF power is symmetrically applied to form a first material layer of SiO2. A second silicon-containing gas, a nitrogen-containing gas, and a second dilution gas are flowed. A second RF power is symmetrically applied to form a second material layer of Si3N4. The flowing the first silicon-containing gas, the oxygen-containing gas, and the first dilution gas, the symmetrically applying the first RF power, the flowing the second silicon-containing gas, the nitrogen-containing gas, and the second dilution gas, and the symmetrically applying the second RF power is repeated until a desired number of first material layers and second material layers make up a layer stack.

Abstract: Techniques are disclosed for methods and apparatuses of an electrostatic chuck suitable for operating at high operating temperatures. In one example, a substrate support assembly is provided. The substrate support assembly includes a substantially disk-shaped ceramic body having an upper surface, a cylindrical sidewall, and a lower surface. The upper surface is configured to support a substrate thereon for processing the substrate in a vacuum processing chamber. The cylindrical sidewall defines an outer diameter of the ceramic body. The lower surface is disposed opposite the upper surface. An electrode is disposed in the ceramic body. A circuit is electrically connected to the electrode. The circuit includes a DC chucking circuit, a first RF drive circuit, and a second RF dive circuit. The DC chucking circuit, the first RF drive circuit and the second RF drive circuit are electrically coupled with the electrode.

Abstract: Photochemical devices having hematite photovoltaic junctions and methods for forming such devices are disclosed. In some embodiments, a photovoltaic device includes a substrate and a photovoltaic junction deposited on the substrate, the photovoltaic junction having a n-type hematite and a p-type hematite.

Abstract: Nanonet-based hematite hetero-nanostructures (100) for solar energy conversions and methods of fabricating same are disclosed. In an embodiment, a hetero-nanostructure (100) includes a plurality of connected and spaced-apart nanobeams (110) linked together at an about 90° angle, the plurality of nanobeams (110) including a conductive silicide core having an n-type photo-active hematite shell. In an embodiment, a device (1100) for splitting water to generate hydrogen and oxygen includes a first compartment (1120) having a two-dimensional hetero-nanostructure (1125), the hetero-nanostructure having a plurality of connected and spaced-apart nanobeams, each nanobeam substantially perpendicular to another nanobeam, the plurality of nanobeams including an n-type photoactive hematite shell having a conductive core; and a second compartment (1110) having a p-type material (1115), wherein the first compartment (1120) and the second compartment (1110) are separated by a semi-permeable membrane.

Abstract: The embodiments disclosed herein relate to hetero-nanostructures for efficient solar energy conversions, and more particularly to the fabrication of titanium dioxide hetero-nanostructures and methods of using same for water splitting. In an embodiment, a hetero-nanostructure includes a plurality of connected and spaced-apart nanobeams linked together at an about 90-degree angle, the plurality of nanobeams including a conductive silicide core having an n-type photoactive titanium dioxide shell.

Abstract: The embodiments disclosed herein relate to hetero-nanostructures for efficient solar energy conversions, and more particularly to the fabrication of titanium dioxide hetero-nanostructures and methods of using same for water splitting. In an embodiment, a hetero-nanostructure includes a plurality of connected and spaced-apart nanobeams linked together at an about 90-degree angle, the plurality of nanobeams including a conductive silicide core having an n-type photoactive titanium dioxide shell.