Abstract: A phase interpolator includes a first circuit to generate a first signal having a first phase delay and a second signal having a second phase delay and a phase mixer. The phase mixer is coupled to receive the first and second signals from the first circuit. The phase mixer includes multiple current drivers each including a current driver input coupled to selectively delay one of the first or second signals and a current driver output coupled to output a phase delayed signal. The current driver outputs of the current drivers are coupled together to combine the phase delayed signals from the current drivers to generate an output phase delayed signal having a phase interpolated from the first and second signals.

Abstract: Matched current delay cells and a delay locked loop based on such cells that may be used for timing data interfaces between semiconductor devices is described. In one embodiment, the delay cell includes a delay cell having a PMOS portion and a NMOS portion, gates of the PMOS portion being coupled to a vp-bias and gates of the NMOS portion being coupled to a vn-bias, the delay cell further being coupled to a reference clock to drive a pulse output of the delay cell, a first bias generation circuit to generate the vn-bias based on a phase comparison of the pulse output to the reference clock, and a second bias generation circuit to generate the vp-bias based on a reference voltage and the vn-bias.

Abstract: Matched current delay cells and a delay locked loop based on such cells that may be used for timing data interfaces between semiconductor devices is described. In one embodiment, the delay cell includes a delay cell having a PMOS portion and a NMOS portion, gates of the PMOS portion being coupled to a vp-bias and gates of the NMOS portion being coupled to a vn-bias, the delay cell further being coupled to a reference clock to drive a pulse output of the delay cell, a first bias generation circuit to generate the vn-bias based on a phase comparison of the pulse output to the reference clock, and a second bias generation circuit to generate the vp-bias based on a reference voltage and the vn-bias.

Abstract: An on-die termination resistor includes three transistors and a resistor. The resistor keeps at least one of the transistors from entering the saturation region and therefore improves the I-V characteristics of the termination resistor.

Abstract: An output buffer generates an output signal having a plurality of low-to-high (LH) and high-to-low (HL) signal transitions, with each of the signal transitions having a clock-to-output delay. A pre-driver having a first and a second stage generates a reshaped waveform to trigger the LH and HL signal transitions of the output signal, with the first stage generating an initial waveform and the second stage modifying the initial waveform to generate the reshaped waveform based at least in part on a feedback reflective of a difference in the clock-to-output delays of the LH and HL signal transitions.

Abstract: An output buffer generates an output signal having a plurality of low-to-high (LH) and high-to-low (HL) signal transitions, with each of the signal transitions having a clock-to-output delay. A pre-driver having a first and a second stage generates a reshaped waveform to trigger the LH and HL signal transitions of the output signal, with the first stage generating an initial waveform and the second stage modifying the initial waveform to generate the reshaped waveform based at least in part on a feedback reflective of a difference in the clock-to-output delays of the LH and HL signal transitions.

Abstract: An on-die termination resistor includes three transistors and a resistor. The resistor keeps at least one of the transistors from entering the saturation region and therefore improves the I-V characteristics of the termination resistor.

Abstract: A graded layer composition of Zn(Se,Te) in which the Te fraction varies across the layer in a super-parabolic grading profile. Such a graded layer has lower contact resistance than graded layers in which the Te fraction varies in a linear or parabolic grading profile. Such low contact resistance makes such graded layers useful in forming ohmic contacts for II-VI semiconductor lasers and light emitting diodes.

Abstract: Group II-VI compound semiconductor light emitting devices which include at least one II-VI quantum well region of a well layer disposed between first and second barrier layers is disclosed. The quantum well region is sandwiched between first and second cladding layers of a II-VI semiconductor material. The first cladding layer is formed on and lattice matched to the first barrier layer and to a substrate of a III-V compound semiconductor material. The second cladding layer is lattice matched to the second barrier layer. The quantum well layer comprises a II-VI compound semiconductor material having the formula A.sub.x B.sub.(1-x) C wherein A and B are two different elements from Group II and C is at least one element from Group VI. When the second cladding layer has a p-type conductivity, a graded bandgap ohmic contact according to the present invention can be utilized.

Abstract: Group II-VI compound semiconductor light emitting devices which include at least one II-VI quantum well region of a well layer disposed between first and second barrier layers is disclosed. The quantum well region is sandwiched between first and second cladding layers of a II-VI semiconductor material. The first cladding layer is formed on and lattice matched to the first barrier layer and to a substrate of a III-V compound semiconductor material. The second cladding layer is lattice matched to the second barrier layer. The quantum well layer comprises a II-VI compound semiconductor material having the formula A.sub.x B.sub.(1-x) C wherein A and B are two different elements from Group II and C is at least one element from Group VI. When the second cladding layer has a p-type conductivity, a graded bandgap ohmic contact according to the present invention can be utilized.