Abstract: Disclosed is a skin care appliance capable of realizing various skin care modes using an oscillator vibrating up and down in the way of a magnetic coil, conducting the galvanic massage and the iontophoresis massage based on the oscillator, and making the magnetic-color-sound therapy. The skin care appliance includes a case with a predetermined shape, and a vibration unit installed within the case and having an oscillator. The oscillator oscillates in the way of a magnetic coil upon receipt of the power from a power supply unit. An outer electrode is charged to a polarity opposite to the polarity of the oscillator, and placed at the case. A switch unit is provided at the case. A control unit controls the vibration unit in accordance with the signals from the switch unit.

Abstract: Disclosed is a method for fabricating a gate of semiconductor device. The disclosed comprises the steps of: sequentially forming a gate oxide layer, a gate material layer and a mask oxide layer on a semiconductor substrate; coating photopolymer having compound accelerator including polar functional group which absorbs HF vapor and ionize at a predetermined high temperature on the mask oxide layer; exposing the photopolymer and cross-linking the portion of exposed photopolymer; performing DFVP process by passing over HF vapor on the resultant substrate at a predetermined high temperature, thereby developing the portion of exposed photopolymer and etching the portion of mask oxide layer exposed by development of photopolymer simultaneously; removing the residual photopolymer; and etching the gate material layer and the gate oxide layer using the etched mask oxide layer.

Abstract: A method for fabricating a semiconductor device capable of maintaining contact hole of fine size when the contact hole for bit line formation is defined.

Abstract: A method for fabricating a semiconductor device capable of maintaining contact hole of fine size when the contact hole for bit line formation is defined.

Abstract: Disclosed is a method for fabricating a gate of semiconductor device. The disclosed comprises the steps of: sequentially forming a gate oxide layer, a gate material layer and a mask oxide layer on a semiconductor substrate; coating photopolymer having compound accelerator including polar functional group which absorbs HF vapor and ionize at a predetermined high temperature on the mask oxide layer; exposing the photopolymer and cross-linking the portion of exposed photopolymer; performing DFVP process by passing over HF vapor on the resultant substrate at a predetermined high temperature, thereby developing the portion of exposed photopolymer and etching the portion of mask oxide layer exposed by development of photopolymer simultaneously; removing the residual photopolymer; and etching the gate material layer and the gate oxide layer using the etched mask oxide layer.