Abstract: A composite anode active material, a method of preparing the composite anode active material, and a lithium battery including the lithium battery. According to the method of preparing the composite anode active material, carbon nanotubes are formed on a Si particle without a separate operation of applying a catalyst. Furthermore, high adherence is provided between the Si particle and carbon nanotubes, and therefore the composite anode active material is used as an anode material of the lithium battery.

Abstract: A heating member for a fusing apparatus includes a resistive heating layer including a base polymer and an electroconductive filler dispersed in the base polymer, where the resistive heating layer generates heat by receiving electric energy, and where a storage modulus of the resistive heating layer is about 1.0 megapascal or greater.

Abstract: A hafnium telluride compound includes a layered crystal structure and represented by the following Chemical Formula 1. Hf3Te2-xAx??[Chemical Formula 1] Herein, A is at least one selected from phosphorus (P), Arsenic (As), antimony (Sb), bismuth (Bi), sulfur (S) and selenium (Se), and 0<x?1.

Abstract: An electrically conductive thin film including a plurality of nanosheets including a doped titanium oxide represented by Chemical Formula 1 and having a layered crystal structure: (A?Ti1??)O2+???Chemical Formula 1 wherein, in Chemical Formula 1, ? is greater than 0, A is at least one dopant metal selected from Nb, Ta, V, W, Cr, and Mo, and ? is greater than 0 and less than 1. Also, an electronic device including the electrically conductive thin film.

Abstract: A heating composite, including a polymer matrix; and a carbon nanotube structure including a plurality of carbon nanotubes continuously connected to each other and integrated with the polymer matrix.

Abstract: An electrically conductive thin film including: a material including a compound represented by Chemical Formula 1 and having a layered crystal structure, MemAa ??Chemical Formula 1 wherein Me is Al, Ga, In, Si, Ge, Sn, A is S, Se, Te, or a combination thereof, and m and a each are independently a number selected so that the compound of Chemical Formula 1 is neutral; and a dopant disposed in the compound of Chemical Formula 1, wherein the dopant is a metal dopant that is different from Me and has an oxidation state which is greater than an oxidation state of Me, a non-metal dopant having a greater number of valence electrons than a number of valence electrons of A in Chemical Formula 1, or a combination thereof, and wherein the compound of Chemical Formula 1 includes a chemical bond which includes a valence electron of an s orbital of Me.

Abstract: A resistance heating composition including a silicon emulsion particle, a carbon nanotube, and an aqueous medium.

Abstract: An electrically conductive thin film including a compound represented by Chemical Formula 1 and having a layered crystal structure Chemical Formula 1 Re2C wherein Re is a lanthanide. Also an electronic device including the electrically conductive thin film.

Abstract: An electrically conductive thin film includes a compound represented by Chemical Formula 1 and having a layered crystal structure: MeB2??Chemical Formula 1 wherein, Me is Au, Al, Ag, Mg, Ta, Nb, Y, W, V, Mo, Sc, Cr, Mn, Os, Tc, Ru, Fe, Zr, or Ti.

Abstract: An electrically conductive thin film including a compound represented by Chemical Formula 1 or Chemical Formula 2 and having a layered crystal structure: M1Te2??Chemical Formula 1 wherein M1 is titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), tantalum (Ta), or niobium (Nb); and M2Se2??Chemical Formula 2 wherein M2 is vanadium (V) or tantalum (Ta).

Abstract: An electrically conductive thin film including a compound represented by Chemical Formula 1 and having a layered crystal structure MeCha??Chemical Formula 1 wherein, Me is Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, or Lu; Ch is sulfur, selenium, or tellurium; and a is an integer ranging from 1 to 3.

Abstract: A conductive material including a first element selected from a transition metal, a platinum-group element, a rare earth element, and a combination thereof, a second element having an atomic radius which is 10 percent less than to 10 percent greater than an atomic radius of the first element, and a chalcogen element, wherein the conductive material has a layered crystal structure.

Abstract: A transparent conductor including a Group 5 transition metal and boron, wherein the compound has a layered structure.

Abstract: A resistance heating element includes a positive temperature coefficient resistance heating layer having a positive temperature coefficient, and a negative temperature coefficient resistance heating layer, which is connected to the positive temperature coefficient resistance heating layer and has a negative temperature coefficient.

Abstract: A transparent electrodes having a conductive thin film, an electronic devices including the same, and methods of producing the same, include a first metal layer and a second metal layer on the first metal layer, wherein a surface energy of the first metal layer is higher than a surface energy of the second metal layer.

Abstract: A hafnium telluride compound includes a layered crystal structure and represented by the following Chemical Formula 1. Hf3Te2-xAx??[Chemical Formula 1] Herein, A is at least one selected from phosphorus (P), Arsenic (As), antimony (Sb), bismuth (Bi), sulfur (S) and selenium (Se), and 0<x?1.

Abstract: Disclosed are a composite transparent electrode, a production method thereof, and an electronic device including the same, wherein the composite transparent electrode includes a metal nitride thin film including at least one of indium (In), titanium (Ti), zinc (Zn), zirconium (Zr), and gallium (Ga), and a metal oxide thin film including at least one of indium (In), zinc (Zn), tin (Sn), and titanium (Ti), the metal oxide thin film being formed on one surface or opposite surfaces of the metal nitride thin film.

Abstract: According to example embodiments, a transparent electrically conductive film including a compound that has a two-dimensional electron gas layer, and has a product of an absorption coefficient (?) for light having a wavelength of about 550 nm at 25° C. and a resistivity value (?) thereof of less than or equal to about 30 ?/sq is provided. The electrically conductive film may be a layered crystal structure of the compound.

Abstract: A heating member includes: a resistive heating layer which generates heat when supplied with electrical energy; a release layer as an outermost layer of the heating member and including a polymer; an intermediate layer disposed between the resistive heating layer and the release layer. The resistive heating layer includes a base polymer, and an electroconductive filler dispersed in the base polymer. The intermediate layer includes a polymer material being a same type as the base polymer of the resistive heating layer or the polymer of the release layer.

Abstract: A transparent conductive thin film and an electronic device including the same are disclosed, the transparent conductive thin film including a titanium nitride or a zirconium nitride having a heterometal element selected from zinc (Zn), gallium (Ga), indium (In), and a combination thereof.