Abstract: A method and apparatus for compositing images in a portable terminal are provided. The method includes acquiring a plurality of images, displaying a plurality of candidate composition regions in each of the plurality of images, selecting a composition region of each of the plurality of images based on a user input, and compositing the plurality of images by using the composition regions of the plurality of images.

Abstract: An electronic apparatus including a communication interface, a display, a memory configured to store one or more instructions, and a processor configured to execute the one or more instructions stored in the memory, wherein, when executed, the one or more instructions cause the processor to receive, based on a fingerprint extracted from content displayed on the display, information of a first broadcast channel corresponding to the content from a server and recognize the first broadcast channel corresponding to the content, in response to determining that a broadcast schedule of a replacement target existing advertisement is included in a broadcast schedule of the first broadcast channel, download a replacement advertisement from the server based on a start point of the replacement target existing advertisement, and reproduce the replacement advertisement at an advertisement time of the replacement target existing advertisement of the first broadcast channel.

Abstract: A memory device has a memory cell array with memory cells. A page buffer group generates page buffer signals according to a verify read result of the memory cells. A page buffer decoding unit generates a decoder output signal corresponding to the number of fail bits from the page buffer signals based on a first reference current. A slow bit counter outputs a count result corresponding to the number of fail bits from the decoder output signal based on a second reference current corresponding to M times the first reference current, where M is a positive integer. A pass/fail checking unit determines a program outcome with respect to the memory cells based on the count result and outputs a pass signal or a fail signal based on the determined program outcome.

Abstract: A method of operating a nonvolatile memory device is provided as follows. The nonvolatile memory device includes memory blocks each of which has word lines. A setup voltage is applied to the word lines. A word line voltage is applied to a first word line selected from the word lines. Recovery voltages are applied to the word lines. Each recovery voltage is applied to at least one corresponding word line of the word lines. The recovery voltages have different voltage levels from each other.

Abstract: A method and apparatus for compositing images in a portable terminal are provided. The method includes acquiring a plurality of images, displaying a plurality of candidate composition regions in each of the plurality of images, selecting a composition region of each of the plurality of images based on a user input, and compositing the plurality of images by using the composition regions of the plurality of images.

Abstract: According to example embodiments of inventive concepts, a nonvolatile memory device includes a memory cell array, an address decoder, an input/output circuit, a voltage generation circuit, and control logic. The memory cell array includes a plurality of memory blocks on a substrate. Each of the memory blocks includes a plurality of strings connected between bit lines and a common source line. The address decoder is configured to measure impedance information of word lines of a selected memory block. The voltage generation circuit is configured to generate word line voltages to be applied to word lines, and at least one of the word line voltages includes an offset voltage and a target voltage. The control logic is configured to adjust a level of the offset voltage and the offset time depending on the measured impedance information of the word lines.

Abstract: In a method of programming a three-dimensional nonvolatile memory device, a program loop is executed at least one time. The program loop includes a programming step for programming selected memory cells among memory cells and a verifying step for verifying whether the selected memory cells are program-passed or not. In programming the selected memory cells, a level of a voltage being applied to a common source line connected to the memory cells in common may be changed. Thus, in a program operation, power consumption which is needed to charge-discharge the common source line can be decreased while increasing boosting efficiency.

Abstract: A memory device has a memory cell array with memory cells. A page buffer group generates page buffer signals according to a verify read result of the memory cells. A page buffer decoding unit generates a decoder output signal corresponding to the number of fail bits from the page buffer signals based on a first reference current. A slow bit counter outputs a count result corresponding to the number of fail bits from the decoder output signal based on a second reference current corresponding to M times the first reference current, where M is a positive integer. A pass/fail checking unit determines a program outcome with respect to the memory cells based on the count result and outputs a pass signal or a fail signal based on the determined program outcome.

Abstract: In a method of programming a three-dimensional nonvolatile memory device, a program loop is executed at least one time, wherein the program loop includes a programming step for programming selected memory cells among the memory cells and a verifying step for verifying whether the selected memory cells are program-passed or not. In the programming the selected memory cells, a level of a voltage being applied to a common source line connected to the strings in common may be changed. Thus, in a program operation, power consumption which is needed to charge-discharge the common source line can be decreased while increasing boosting efficiency.

Abstract: In a method of programming a three-dimensional nonvolatile memory device, a program loop is executed at least one time, wherein the program loop includes a programming step for programming selected memory cells among the memory cells and a verifying step for verifying whether the selected memory cells are program-passed or not. In the programming the selected memory cells, a level of a voltage being applied to a common source line connected to the strings in common may be changed. Thus, in a program operation, power consumption which is needed to charge-discharge the common source line can be decreased while increasing boosting efficiency.

Abstract: According to example embodiments of inventive concepts, a nonvolatile memory device includes a memory cell array, an address decoder, an input/output circuit, a voltage generation circuit, and control logic. The memory cell array includes a plurality of memory blocks on a substrate. Each of the memory blocks includes a plurality of strings connected between bit lines and a common source line. The address decoder is configured to measure impedance information of word lines of a selected memory block. The voltage generation circuit is configured to generate word line voltages to be applied to word lines, and at least one of the word line voltages includes an offset voltage and a target voltage. The control logic is configured to adjust a level of the offset voltage and the offset time depending on the measured impedance information of the word lines.

Abstract: In a method of programming a three-dimensional nonvolatile memory device, a program loop is executed at least one time, wherein the program loop includes a programming step for programming selected memory cells among the memory cells and a verifying step for verifying whether the selected memory cells are program-passed or not. In the programming the selected memory cells, a level of a voltage being applied to a common source line connected to the strings in common may be changed. Thus, in a program operation, power consumption which is needed to charge-discharge the common source line can be decreased while increasing boosting efficiency.

Abstract: A method and apparatus for compositing images in a portable terminal are provided. The method includes acquiring a plurality of images, displaying a plurality of candidate composition regions in each of the plurality of images, selecting a composition region of each of the plurality of images based on a user input, and compositing the plurality of images by using the composition regions of the plurality of images.

Abstract: Methods and apparatus are provided for outputting broadcast recorded by schedule recording. A schedule recording command message is received from a broadcast output apparatus at a cloud server. Broadcast data corresponding to the schedule recording command message is received. A file format used by the broadcast output apparatus is identified. The broadcast data is transcoded into the file format used by the broadcast output apparatus. The transcoded broadcast data is stored. The transcoded broadcast data is transmitted to the broadcast output apparatus when a broadcast request message is received from the broadcast output apparatus.

Abstract: A method of operating a nonvolatile memory device is provided as follows. The nonvolatile memory device includes memory blocks each of which has word lines. A setup voltage is applied to the word lines. A word line voltage is applied to a first word line selected from the word lines. Recovery voltages are applied to the word lines. Each recovery voltage is applied to at least one corresponding word line of the word lines. The recovery voltages have different voltage levels from each other.

Abstract: In a method of programming a three-dimensional nonvolatile memory device, a program loop is executed at least one time, wherein the program loop includes a programming step for programming selected memory cells among the memory cells and a verifying step for verifying whether the selected memory cells are program-passed or not. In the programming the selected memory cells, a level of a voltage being applied to a common source line connected to the strings in common may be changed. Thus, in a program operation, power consumption which is needed to charge-discharge the common source line can be decreased while increasing boosting efficiency.

Abstract: A programming method is for programming a nonvolatile memory device including a plurality of strings disposed perpendicular to a substrate and connected between bitlines and a common source line. The programming method includes setting up the common source line to a predetermined voltage, floating the setup common source line, performing a program operation on memory cells connected to a selected wordline, and performing a verify operation on the memory cells.

Abstract: An operating method of a memory system which includes a nonvolatile memory device including memory cells connected to a plurality of word lines, the operating method including pre-charging a selected one of the plurality of word lines; detecting a variation in a voltage or a current on the selected word line after the selected word line is floated; generating runtime failure information according to the detected variation; and determining a state of the selected word line or a state of a memory block including the selected word line, based on the runtime failure information.