Patents by Inventor Yoon-ho Khang

Yoon-ho Khang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210217895
    Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.
    Type: Application
    Filed: December 8, 2020
    Publication date: July 15, 2021
    Inventors: Yong Su Lee, Yoon Ho Khang, Dong Jo Kim, Hyun Jae Na, Sang Ho Park, Se Hwan Yu, Chong Sup Chang, Dae Ho Kim, Jae Neung Kim, Myoung Geun Cha, Sang Gap Kim, Yu-Gwang Jeong
  • Patent number: 10861978
    Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.
    Type: Grant
    Filed: December 24, 2018
    Date of Patent: December 8, 2020
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Yong Su Lee, Yoon Ho Khang, Dong Jo Kim, Hyun Jae Na, Sang Ho Park, Se Hwan Yu, Chong Sup Chang, Dae Ho Kim, Jae Neung Kim, Myoung Geun Cha, Sang Gab Kim, Yu-Gwang Jeong
  • Publication number: 20200365834
    Abstract: An OLED display and a method of manufacturing thereof are disclosed In one aspect, the display includes a scan line formed over a substrate and configured to transfer a scan signal, a data line and a driving voltage line crossing the scan line and respectively configured to transfer a data voltage and a driving voltage, and a switching transistor electrically connected to the scan line and the data line and including a switching drain electrode configured to output the data voltage. The display also includes a driving transistor including a driving gate electrode, a driving drain electrode, and a driving source electrode electrically connected to the switching drain electrode. The display further includes a storage capacitor including a first storage electrode electrically connected to the driving gate electrode and a second storage electrode formed on the same layer as the driving voltage line.
    Type: Application
    Filed: August 5, 2020
    Publication date: November 19, 2020
    Inventors: MYOUNG GEUN CHA, Jin Goo Jung, Yoon Ho Khang, Se Mi Kim
  • Patent number: 10741797
    Abstract: An OLED display and a method of manufacturing thereof are disclosed. In one aspect, the display includes a scan line formed over a substrate and configured to transfer a scan signal, a data line and a driving voltage line crossing the scan line and respectively configured to transfer a data voltage and a driving voltage, and a switching transistor electrically connected to the scan line and the data line and including a switching drain electrode configured to output the data voltage. The display also includes a driving transistor including a driving gate electrode, a driving drain electrode, and a driving source electrode electrically connected to the switching drain electrode. The display further includes a storage capacitor including a first storage electrode electrically connected to the driving gate electrode and a second storage electrode formed on the same layer as the driving voltage line.
    Type: Grant
    Filed: January 10, 2018
    Date of Patent: August 11, 2020
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Myoung Geun Cha, Jin Goo Jung, Yoon Ho Khang, Se Mi Kim
  • Publication number: 20190312147
    Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.
    Type: Application
    Filed: December 24, 2018
    Publication date: October 10, 2019
    Inventors: Yong Su Lee, Yoon Ho Khang, Dong Jo Kim, Hyun Jae Na, Sang Ho Park, Se Hwan Yu, Chong Sup Chang, Dae Ho Kim, Jae Neung Kim, Myoung Geun Cha, Sang Gab Kim, Yu-Gwang Jeong
  • Patent number: 10388794
    Abstract: A display device according to an exemplary embodiment of the present invention includes: a substrate; a plurality of transistors formed on the substrate; and a light-emitting device connected to the plurality of transistors, wherein the transistor includes a gate electrode, the plurality of transistors include a first transistor and a second transistor of which lateral wall slope angles of the gate electrode are different from each other, and the first transistor further includes a doping control member formed on a lateral wall of the gate electrode.
    Type: Grant
    Filed: February 8, 2016
    Date of Patent: August 20, 2019
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Jong Chan Lee, Woong Hee Jeong, Dae Ho Kim, Young Ki Shin, Yoon Ho Khang, Myoung Geun Cha
  • Patent number: 10192901
    Abstract: An organic light emitting diode display having a lightly doped region formed in a transistor for simplifying manufacturing process and reducing manufacturing costs is provided. The organic light emitting diode display includes: a substrate, a transistor on the substrate, and an organic light emitting diode (OLED) connected to the transistor, wherein the transistor includes a semiconductor member on the substrate, an insulating member on the semiconductor member, a source member and a drain member disposed on the semiconductor member and respectively disposed at opposite sides of the insulating member, and a gate electrode on the insulating member, wherein each of the source member and the drain member includes a plurality of layers having different impurity doping concentrations.
    Type: Grant
    Filed: August 26, 2016
    Date of Patent: January 29, 2019
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Young Ki Shin, Dae Ho Kim, Jong Chan Lee, Woong Hee Jeong, Yoon Ho Khang
  • Patent number: 10192992
    Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.
    Type: Grant
    Filed: September 14, 2017
    Date of Patent: January 29, 2019
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Yong Su Lee, Yoon Ho Khang, Dong Jo Kim, Hyun Jae Na, Sang Ho Park, Se Hwan Yu, Chong Sup Chang, Dae Ho Kim, Jae Neung Kim, Myoung Geun Cha, Sang Gab Kim, Yu-Gwang Jeong
  • Publication number: 20180240910
    Abstract: A transistor includes a buffer layer, an active pattern, and a first insulating layer. The buffer layer is doped with an impurity. The active pattern is on the buffer layer and includes a channel area between a source area and a drain area. The first insulating layer is on the active pattern. A gate electrode is on the first insulating layer and overlaps the channel area. A source electrode is insulated from the gate electrode and is electrically coupled with the source area. A drain electrode is insulated from the gate electrode and is electrically coupled with the drain area.
    Type: Application
    Filed: February 21, 2018
    Publication date: August 23, 2018
    Inventors: Yoon Ho KHANG, Doo Na KIM, Myoung Geun CHA
  • Publication number: 20180159090
    Abstract: An OLED display and a method of manufacturing thereof are disclosed. In one aspect, the display includes a scan line formed over a substrate and configured to transfer a scan signal, a data line and a driving voltage line crossing the scan line and respectively configured to transfer a data voltage and a driving voltage, and a switching transistor electrically connected to the scan line and the data line and including a switching drain electrode configured to output the data voltage. The display also includes a driving transistor including a driving gate electrode, a driving drain electrode, and a driving source electrode electrically connected to the switching drain electrode. The display further includes a storage capacitor including a first storage electrode electrically connected to the driving gate electrode and a second storage electrode formed on the same layer as the driving voltage line.
    Type: Application
    Filed: January 10, 2018
    Publication date: June 7, 2018
    Inventors: Myoung Geun Cha, Jin Goo Jung, Yoon Ho Khang, Se Mi Kim
  • Patent number: 9991319
    Abstract: A thin film transistor (TFT), method of manufacturing the TFT and a flat panel display having the TFT are disclosed. In one aspect, the TFT comprises a substrate and an active layer formed over the substrate, wherein the active layer is formed of oxide semiconductor, and wherein the active layer includes two opposing sides. The TFT also comprises source and drain regions formed at the opposing sides of the active layer, a first insulating layer formed over the active layer, a gate electrode formed over the active layer, a second insulating layer formed covering the first insulation layer and the gate electrode, and a first conductive layer formed on the source and drain regions and contacting the second insulating layer.
    Type: Grant
    Filed: December 13, 2016
    Date of Patent: June 5, 2018
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Myoung-Geun Cha, Sang-Ho Park, Hyun-Jae Na, Yoon-Ho Khang, Dae-Ho Kim
  • Patent number: 9929191
    Abstract: A thin film transistor substrate includes a base substrate, an active pattern disposed on the base substrate, a gate insulation pattern disposed on the active pattern, a gate electrode disposed on the gate insulation pattern and overlapping the channel, and a light-blocking pattern disposed between the base substrate and the active pattern and having a size greater than the active pattern. The active pattern includes a source electrode, a drain electrode, and a channel disposed between the source electrode and the drain electrode.
    Type: Grant
    Filed: January 26, 2016
    Date of Patent: March 27, 2018
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Sang-Ho Park, Su-Hyoung Kang, Dong-Hwan Shim, Yoon-Ho Khang, Se-Hwan Yu, Min-Jung Lee, Yong-Su Lee
  • Patent number: 9921794
    Abstract: A blind display device includes a plurality of curved display panels, a support, and a plurality of rotators. Each of the curved display panels includes a curved display area between a flat display area and a bezel area. The support guides movement of the curved display panels. The rotators couple corresponding ones of the curved display panels to the support and rotate corresponding ones of the curved display panels.
    Type: Grant
    Filed: February 4, 2016
    Date of Patent: March 20, 2018
    Assignee: Samsung Display Co., Ltd.
    Inventors: Jong-Chan Lee, So-Young Koo, Myoung-Geun Cha, Yoon-Ho Khang, Myoung-Hwa Kim, Woong-Hee Jeong
  • Publication number: 20180069129
    Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.
    Type: Application
    Filed: September 14, 2017
    Publication date: March 8, 2018
    Inventors: YONG SU LEE, YOON HO KHANG, DONG JO KIM, HYUN JAE NA, SANG HO PARK, SE HWAN YU, CHONG SUP CHANG, DAE HO KIM, JAE NEUNG KIM, MYOUNG GEUN CHA, SANG GAB KIM, YU-GWANG JEONG
  • Patent number: 9899634
    Abstract: An OLED display and a method of manufacturing thereof are disclosed. In one aspect, the display includes a scan line formed over a substrate and configured to transfer a scan signal, a data line and a driving voltage line crossing the scan line and respectively configured to transfer a data voltage and a driving voltage, and a switching transistor electrically connected to the scan line and the data line and including a switching drain electrode configured to output the data voltage. The display also includes a driving transistor including a driving gate electrode, a driving drain electrode, and a driving source electrode electrically connected to the switching drain electrode. The display further includes a storage capacitor including a first storage electrode electrically connected to the driving gate electrode and a second storage electrode formed on the same layer as the driving voltage line.
    Type: Grant
    Filed: May 8, 2015
    Date of Patent: February 20, 2018
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Myoung Geun Cha, Jin Goo Jung, Yoon Ho Khang, Se Mi Kim
  • Patent number: 9882056
    Abstract: A thin film transistor including a gate electrode, a semiconductor layer, a gate insulating layer, a source electrode, a drain electrode and a graphene pattern. The semiconductor layer overlaps with the gate electrode. The gate insulating layer is disposed between the gate electrode and the semiconductor layer. The source electrode overlaps with the semiconductor layer. The drain electrode overlaps with the semiconductor layer. The drain electrode is spaced apart from the source electrode. The graphene pattern is disposed between the semiconductor layer and at least one of the source electrode and the drain electrode.
    Type: Grant
    Filed: November 12, 2015
    Date of Patent: January 30, 2018
    Assignee: Samsung Display Co., Ltd.
    Inventors: Yong-Su Lee, Yoon-Ho Khang, Se-Hwan Yu, Su-Hyoung Kang
  • Patent number: 9837446
    Abstract: A thin film transistor array panel includes: a gate wiring layer disposed on a substrate; an oxide semiconductor layer disposed on the gate wiring layer; and a data wiring layer disposed on the oxide semiconductor layer, in which the data wiring layer includes a main wiring layer including copper and a capping layer disposed on the main wiring layer and including a copper alloy.
    Type: Grant
    Filed: February 8, 2017
    Date of Patent: December 5, 2017
    Assignee: Samsung Display Co., Ltd.
    Inventors: Do-Hyun Kim, Yoon Ho Khang, Dong-Hoon Lee, Sang Ho Park, Se Hwan Yu, Cheol Kyu Kim, Yong-Su Lee, Sung Haeng Cho, Chong Sup Chang, Dong Jo Kim, Jung Kyu Lee
  • Patent number: 9791987
    Abstract: A touch screen panel includes a substrate, a plurality of touch electrodes in a touch area of the substrate, the touch electrodes sensing a touch, a connection line connected to a touch electrode of the plurality of touch electrodes, and a pad connected to one end of the connection line. The pad includes a first pad, a second pad on the first pad within a boundary line of the first pad, and a third pad covering a top surface and a side surface of the second pad.
    Type: Grant
    Filed: August 24, 2015
    Date of Patent: October 17, 2017
    Assignee: Samsung Display Co., Ltd.
    Inventors: So Young Koo, Jong Chan Lee, Yoon Ho Khang, Sun Haeng Cho
  • Patent number: 9768309
    Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.
    Type: Grant
    Filed: June 28, 2016
    Date of Patent: September 19, 2017
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Yong Su Lee, Yoon Ho Khang, Dong Jo Kim, Hyun Jae Na, Sang Ho Park, Se Hwan Yu, Chong Sup Chang, Dae Ho Kim, Jae Neung Kim, Myoung Geun Cha, Sang Gab Kim, Yu-Gwang Jeong
  • Publication number: 20170200740
    Abstract: A thin film transistor includes a semiconductor pattern formed on a substrate, the semiconductor pattern being formed of an oxide semiconductor and including a source area, a drain area, and an intermediate area that is formed between the source area and the drain area and includes a plurality of first areas and a second area having higher conductivity than the first areas; a first insulating pattern formed to cover at least the first areas; a second insulating film formed to face the second area, the source area and the drain area; a gate electrode formed on the semiconductor pattern and insulated from the semiconductor pattern by the first insulating pattern and the second insulating film; and source and drain electrodes insulated from the gate electrode and being in contact with the source area and the drain area.
    Type: Application
    Filed: March 15, 2017
    Publication date: July 13, 2017
    Inventors: Su-Hyoung Kang, Seung-Hwan Cho, Yoon-Ho Khang, Jong-Chan Lee