Abstract: Disclosed are a method and an apparatus for detecting spike event or transmitting spike event information generated in a neuromorphic chip. The apparatus for detecting spike event generated in a neuromorphic chip may detect spike event information for a plurality of neurons included in the neuromorphic chip based on a neuron group.

Abstract: The present invention relates to a design technology of a phase locked loop (PLL) for generating an accurate clock frequency in a clock synchronization system. The present invention suggests a new structure based on a hardware description language (HDL), and thus reduces a chip area of a frequency synthesizer while obtaining a wide frequency operation range. Furthermore, since only the HDL is used, the entire frequency synthesizer becomes all-synthesizable, and auto layout (auto P&R) can be achieved through a tool, which makes it possible to reduce a design cost of a designer.

Abstract: The present invention relates to a technology capable of compensating for a frequency error in a quadrature relaxation oscillator. The quadrature relaxation oscillator generates a signal at a desired frequency by using a resistor and a capacitor which are less insensitive to a PVT (Process, Voltage, Temperature) variation, generates a signal at a desired frequency by compensating for an error from design, which is caused by a mismatch between circuits due to a characteristic of a semiconductor process, through a feedback lop, and removes noise.

Abstract: Provided is a technology for reducing hardware cost and enabling on-chip learning in a neuromorphic system. A synapse array includes a plurality of synapse circuits, and at least one of the plurality of synapse circuits includes at least bias transistor and a switch connected in series. Synapse circuits in the same row and column direction of the synapse array are connected to each other through a shared membrane line, and a charge amount proportional to a multiplication accumulation operation required for a forward or backward operation is supplied through the membrane line and is converted into a final digital value for output through an analog to digital converter. A virtual look-up table performs in advance a calculation required for a synapse weight update for learning of at least one column of the synapse array and is updated, so that the amount of a calculation required for entire learning is reduced.

Abstract: The present invention relates to a successive approximation register (SAR)-type analog-digital converter (ADC), which can amplify a residual voltage without a non-linearity problem caused by an output voltage of a residual voltage amplifier, thereby performing high-resolution analog-digital conversion at low power consumption.

Abstract: The present invention relates to a successive approximation register (SAR)-type analog-digital converter (ADC), which can amplify a residual voltage without a non-linearity problem caused by an output voltage of a residual voltage amplifier, thereby performing high-resolution analog-digital conversion at low power consumption.

Abstract: An all digital phase locked loop (ADPLL) includes an integer part phase processing circuit that outputs an integer part frequency signal using a first value and a second value. The first value is obtained by counting edges of one of a plurality of output clock signals. The second value indicates current edge position information on an edge position of an external reference clock signal with respect to the plurality of output clock signals. The ADPLL further includes a fraction part phase processing circuit that selects two adjacent output clock signals of the plurality of output clock signals according to a prediction selection signal and that generates a fraction part frequency signal using the fraction part phase signal, the prediction selection signal being generated according to a fraction part phase signal indicating fraction part phase information and a signal indicating the current edge position information.

Abstract: An all digital phase locked loop (ADPLL) includes an integer part phase processing circuit that outputs an integer part frequency signal using a first value and a second value. The first value is obtained by counting edges of one of a plurality of output clock signals. The second value indicates current edge position information on an edge position of an external reference clock signal with respect to the plurality of output clock signals. The ADPLL further includes a fraction part phase processing circuit that selects two adjacent output clock signals of the plurality of output clock signals according to a prediction selection signal and that generates a fraction part frequency signal using the fraction part phase signal, the prediction selection signal being generated according to a fraction part phase signal indicating fraction part phase information and a signal indicating the current edge position information.

Abstract: The display driving circuit including a type detector for receiving a data packet including a 2-bit embedded signal, in which a clock signal embedded in a data signal, and outputting a first reference clock or a second reference clock different from the first reference clock according to a type of the data packet, a window generator for receiving multi-phase clocks and providing to the type detector a first window reference and a second window reference different from the first window reference to be used in determining the type of the data packet, a buffer for delaying the first reference clock by a first interval and delaying the second reference clock by a second interval different from the first interval, and a multiplexer for multiplexing the delayed first and second reference clocks and outputting a multiplexed reference clock may be provided.

Abstract: A synapse circuit to perform spike timing dependent plasticity (STDP) operation is provided. The synapse circuit includes a memristor having a resistance value, a transistor connected to the memristor, and the transistor configured to receive at least two input signals. The resistance value of the memristor is changed based on a time difference between the at least two input signals received by the transistor.

Abstract: An electrostatic discharge clamp circuit is provided for low power applications. The clamp circuit includes: a detection circuit, a bias circuit and a shunting circuit having at least one shunt transistor. The detection circuit is configured to detect an occurrence of an electrostatic charge on a power supply node and trigger discharge of the electrostatic charge through the shunting circuit. The bias circuit is coupled between the detection circuit and the shunting circuit and applies a bias voltage to the gate terminal of the shunt transistor. During an electrostatic discharge event, the bias circuit is configured to generate a bias voltage that is substantially equal to the supply voltage; whereas, during the absence of an electrostatic discharge event, the bias circuit is configured to generate a bias voltage that is substantially half of the supply voltage.

Abstract: The present invention relates to a technique capable of implementing a frequency synthesizer circuit separated into a frequency synthesizer circuit part and an injection locked PLL circuit part and sequentially performing a frequency synthesizer lock operation and an injection lock operation to implement fast frequency and phase locking. The present invention comprises: a frequency synthesizer configured to perform a frequency and phase lock operation according to fractional number information and a first reference cock signal supplied from outside and thereby output a reset signal and a second reference clock signal; and an injection locked PLL configured to start a frequency lock operation after being reset by the reset signal inputted when the frequency synthesizer is frequency-locked, receive the second reference clock signal as a reference clock, multiply the second reference clock signal by an integer multiple of target frequency, and output an output clock signal.

Abstract: A low-power bandgap reference voltage generator using a leakage current may include: a medium voltage generation unit configured to generate a medium voltage based on the absolute temperature, using a leakage current; a low power amplifier configured to amplify the medium voltage and outputting an operational amplification voltage; and a reference voltage output unit configured to output a reference voltage based on the operational amplification voltage at a target level.

Abstract: A low-power bandgap reference voltage generator using a leakage current may include: a medium voltage generation unit configured to generate a medium voltage based on the absolute temperature, using a leakage current; a low power amplifier configured to amplify the medium voltage and outputting an operational amplification voltage; and a reference voltage output unit configured to output a reference voltage based on the operational amplification voltage at a target level.

Abstract: A synapse array based on a static random access memory (SRAM), a pulse shaper circuit, and a neuromorphic system are provided. The synapse array includes a plurality of synapse circuits. At least one synapse circuit among the plurality of synapse circuits includes at least one bias transistor and at least two cut-off transistors, and the at least one synapse circuit is configured to charge a membrane node of a neuron circuit connected with the at least one synapse circuit using a sub-threshold leakage current that passed through the at least one bias transistor.

Abstract: The present invention relates to a technique capable of implementing a frequency synthesizer circuit separated into a frequency synthesizer circuit part and an injection locked PLL circuit part and sequentially performing a frequency synthesizer lock operation and an injection lock operation to implement fast frequency and phase locking. The present invention comprises: a frequency synthesizer configured to perform a frequency and phase lock operation according to fractional number information and a first reference cock signal supplied from outside and thereby output a reset signal and a second reference clock signal; and an injection locked PLL configured to start a frequency lock operation after being reset by the reset signal inputted when the frequency synthesizer is frequency-locked, receive the second reference clock signal as a reference clock, multiply the second reference clock signal by an integer multiple of target frequency, and output an output clock signal.

Abstract: An apparatus and a method for transmitting and receiving a spike event in a neuromorphic chip. A transmission apparatus of the neuromorphic chip outputs addresses sequentially and repeatedly to an address bus, and when a spike generated by a neuron is detected by the transmission apparatus, outputs a strobe at a first time when one of the addresses being output sequentially and repeatedly becomes identical to an address of the neuron that generated the spike. A receiving apparatus of the neuromorphic chip inputs an address through the address bus at a strobe detection time when the strobe is detected by the receiving apparatus.

Abstract: The display driving circuit including a type detector for receiving a data packet including a 2-bit embedded signal, in which a clock signal embedded in a data signal, and outputting a first reference clock or a second reference clock different from the first reference clock according to a type of the data packet, a window generator for receiving multi-phase clocks and providing to the type detector a first window reference and a second window reference different from the first window reference to be used in determining the type of the data packet, a buffer for delaying the first reference clock by a first interval and delaying the second reference clock by a second interval different from the first interval, and a multiplexer for multiplexing the delayed first and second reference clocks and outputting a multiplexed reference clock may be provided.

Abstract: A synapse for a spike timing dependent (STDP) function cell includes a memory device having a variable resistance, such as a memristor, and a transistor connected to the memory device. A channel of the memory device is connected in series with a channel of the transistor.

Abstract: An electrostatic discharge clamp circuit is provided for low power applications. The clamp circuit includes: a detection circuit, a bias circuit and a shunting circuit having at least one shunt transistor. The detection circuit is configured to detect an occurrence of an electrostatic charge on a power supply node and trigger discharge of the electrostatic charge through the shunting circuit. The bias circuit is coupled between the detection circuit and the shunting circuit and applies a bias voltage to the gate terminal of the shunt transistor. During an electrostatic discharge event, the bias circuit is configured to generate a bias voltage that is substantially equal to the supply voltage; whereas, during the absence of an electrostatic discharge event, the bias circuit is configured to generate a bias voltage that is substantially half of the supply voltage.