Patents by Inventor Yoo Sam Na
Yoo Sam Na has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11658393Abstract: A radio-frequency device includes a radio-frequency module. The radio-frequency module includes a first substrate, a second substrate, a radio-frequency integrated circuit (RFIC), a front-end integrated circuit (FEIC), and a flexible substrate. The RFIC has at least a portion surrounded by a first core member and is configured to input or output a base signal and a first radio-frequency (RF) signal having a frequency higher than a frequency of the base signal. The FEIC has at least a portion surrounded by a second core member and is configured to input or output the first RF signal and a second RF signal having a power different from a power of the first RF signal. The flexible substrate is configured to connect the first and second substrates to each other, provide a transmission path for the first RF signal, and being more flexible than the first and second substrates.Type: GrantFiled: June 22, 2021Date of Patent: May 23, 2023Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Hak Gu Kim, Young Sik Hur, Yoo Sam Na, Won Gi Kim, Young Bal Kim, Soo Ki Choi, Ho Kyung Kang, Young Kyoon Im, Seong Jong Cheon
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Patent number: 11502710Abstract: A front-end module includes: a substrate including a first connection member in which at least one first insulating layer and at least one first wiring layer are alternately stacked, a second connection member in which at least one second insulating layer and at least one second wiring layer are alternately stacked, and a core member disposed between the first and second connection members; a radio-frequency component mounted on a surface of the substrate and configured to amplify a main band of an input RF signal or filter bands outside the main band; an inductor disposed on a surface of the core member and electrically connected to the radio-frequency component; and a ground plane disposed on another surface of the core member. The core member includes a core insulating layer thicker than an insulating layer among at least one first insulating layer and the at least one second insulating layer.Type: GrantFiled: July 20, 2020Date of Patent: November 15, 2022Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Kang Ta Jo, Seong Jong Cheon, Se Jong Kim, Ho Taek Song, Jang Ho Park, Yoo Sam Na, Jae Hyouck Choi, Young Sik Hur
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Patent number: 11335991Abstract: A radio-frequency device includes a radio-frequency module. The radio-frequency module includes a first substrate, a second substrate, a radio-frequency integrated circuit (RFIC), a front-end integrated circuit (FEIC), and a flexible substrate. The RFIC has at least a portion surrounded by a first core member and is configured to input or output a base signal and a first radio-frequency (RF) signal having a frequency higher than a frequency of the base signal. The FEIC has at least a portion surrounded by a second core member and is configured to input or output the first RF signal and a second RF signal having a power different from a power of the first RF signal. The flexible substrate is configured to connect the first and second substrates to each other, provide a transmission path for the first RF signal, and being more flexible than the first and second substrates.Type: GrantFiled: July 24, 2020Date of Patent: May 17, 2022Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Hak Gu Kim, Young Sik Hur, Yoo Sam Na, Won Gi Kim, Young Bal Kim, Soo Ki Choi, Ho Kyung Kang, Young Kyoon Im, Seong Jong Cheon
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Publication number: 20220116018Abstract: A bulk-acoustic wave filter device includes: a substrate; a resonance portion in which a cavity is disposed between the substrate and the resonance portion; and a cap configured to form an internal space together with the substrate, wherein filling gas including at least one of hydrogen gas and helium gas is filled in at least one of the cavity and the internal space formed by the substrate and the cap.Type: ApplicationFiled: April 19, 2021Publication date: April 14, 2022Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Jang Ho PARK, Yoo Sam NA, Young Sik HUR, Seung Wook PARK, Hwa Sun LEE, Won Kyu JEUNG
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Patent number: 11228337Abstract: An apparatus for switching a transmission route of a radio frequency signal is provided. The apparatus may include a first inductor electrically connected to first and second ports; a second inductor electrically connected to the third and fourth ports and disposed to have mutual inductance with the first inductor; first, second, third, and fourth switches configured to switch an electrical connection between the first, second, third, and fourth ports and a ground, respectively; wherein the first and second inductors are electrically connected to the ground through one of the first and second switches and one of the third and fourth switches such that a radio frequency signal pass between one of the first and second ports an one of the third and fourth ports.Type: GrantFiled: July 15, 2020Date of Patent: January 18, 2022Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Hyun Jin Yoo, Young Sik Hur, Hyeon Seok Hwang, Si Heon Kwak, Yoo Sam Na, Ju Yeon Lee
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Publication number: 20210313672Abstract: A radio-frequency device includes a radio-frequency module. The radio-frequency module includes a first substrate, a second substrate, a radio-frequency integrated circuit (RFIC), a front-end integrated circuit (FEIC), and a flexible substrate. The RFIC has at least a portion surrounded by a first core member and is configured to input or output a base signal and a first radio-frequency (RF) signal having a frequency higher than a frequency of the base signal. The FEIC has at least a portion surrounded by a second core member and is configured to input or output the first RF signal and a second RF signal having a power different from a power of the first RF signal. The flexible substrate is configured to connect the first and second substrates to each other, provide a transmission path for the first RF signal, and being more flexible than the first and second substrates.Type: ApplicationFiled: June 22, 2021Publication date: October 7, 2021Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Hak Gu KIM, Young Sik HUR, Yoo Sam NA, Won Gi KIM, Young Bal KIM, Soo Ki CHOI, Ho Kyung KANG, Young Kyoon IM, Seong Jong CHEON
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Publication number: 20210306025Abstract: An apparatus for switching a transmission route of a radio frequency signal is provided. The apparatus may include a first inductor electrically connected to first and second ports; a second inductor electrically connected to the third and fourth ports and disposed to have mutual inductance with the first inductor; first, second, third, and fourth switches configured to switch an electrical connection between the first, second, third, and fourth ports and a ground, respectively; wherein the first and second inductors are electrically connected to the ground through one of the first and second switches and one of the third and fourth switches such that a radio frequency signal pass between one of the first and second ports an one of the third and fourth ports.Type: ApplicationFiled: July 15, 2020Publication date: September 30, 2021Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Hyun Jin YOO, Young Sik HUR, Hyeon Seok HWANG, Si Heon KWAK, Yoo Sam NA, Ju Yeon LEE
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Publication number: 20210242892Abstract: A front-end module includes: a substrate including a first connection member in which at least one first insulating layer and at least one first wiring layer are alternately stacked, a second connection member in which at least one second insulating layer and at least one second wiring layer are alternately stacked, and a core member disposed between the first and second connection members; a radio-frequency component mounted on a surface of the substrate and configured to amplify a main band of an input RF signal or filter bands outside the main band; an inductor disposed on a surface of the core member and electrically connected to the radio-frequency component; and a ground plane disposed on another surface of the core member. The core member includes a core insulating layer thicker than an insulating layer among at least one first insulating layer and the at least one second insulating layer.Type: ApplicationFiled: July 20, 2020Publication date: August 5, 2021Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Kang Ta JO, Seong Jong CHEON, Se Jong KIM, Ho Taek SONG, Jang Ho PARK, Yoo Sam NA, Jae Hyouck CHOI, Young Sik HUR
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Publication number: 20210143525Abstract: A radio-frequency device includes a radio-frequency module. The radio-frequency module includes a first substrate, a second substrate, a radio-frequency integrated circuit (RFIC), a front-end integrated circuit (FEIC), and a flexible substrate. The RFIC has at least a portion surrounded by a first core member and is configured to input or output a base signal and a first radio-frequency (RF) signal having a frequency higher than a frequency of the base signal. The FEIC has at least a portion surrounded by a second core member and is configured to input or output the first RF signal and a second RF signal having a power different from a power of the first RF signal. The flexible substrate is configured to connect the first and second substrates to each other, provide a transmission path for the first RF signal, and being more flexible than the first and second substrates.Type: ApplicationFiled: July 24, 2020Publication date: May 13, 2021Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Hak Gu KIM, Young Sik HUR, Yoo Sam NA, Won Gi KIM, Young Bal KIM, Soo Ki CHOI, Ho Kyung KANG, Young Kyoon IM, Seong Jong CHEON
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Patent number: 10979007Abstract: An amplifying device includes: an amplifying circuit connected between an input terminal and an output terminal and amplifying a signal input in an amplification mode; and a bypass circuit including a filter connected to a bypass path for bypassing the amplifying circuit, wherein the bypass path is in an off-state in the amplification mode and is in an on-state in a bypass mode, and the filter bypasses an input high-frequency signal to ground, in the amplification mode.Type: GrantFiled: February 22, 2019Date of Patent: April 13, 2021Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Hyung Jun Cho, Hyun Jin Yoo, Jong Mo Lim, Hyun Hwan Yoo, Yoo Sam Na, Yoo Hwan Kim
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Patent number: 10903799Abstract: An amplifying apparatus includes a variable gain amplifying circuit configured to operate in a gain mode selected from a plurality of gain modes in response to a first control signal during operation in an amplification mode, a variable attenuation circuit configured to have an attenuation value that is adjusted in response to a second control signal, and a phase compensation value which compensates for a phase distortion in the selected gain mode, and a control circuit configured to control the selecting of the gain mode, the adjusting of the attenuation value and the phase compensation value, based on the first and second control signals.Type: GrantFiled: October 24, 2018Date of Patent: January 26, 2021Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Hyun Jin Yoo, Jong Mo Lim, Yoo Sam Na, Hyung Jun Cho, Yoo Hwan Kim, Hyun Hwan Yoo
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Patent number: 10903836Abstract: A radio-frequency switch includes a first series switch including a plurality of series field-effect transistors (FETs) connected in series between a first terminal and a second terminal, a first shunt switch including a plurality of shunt FETs connected in series between the first terminal and a first ground terminal, and a first shunt gate resistor circuit including a plurality of gate resistors respectively connected to gates of the plurality of shunt FETs of the first shunt switch. Respective resistance values of the plurality of gate resistors of the first shunt gate resistor circuit successively increase in a direction away from the first ground terminal toward the first terminal.Type: GrantFiled: March 27, 2020Date of Patent: January 26, 2021Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Byeong Hak Jo, Yoo Sam Na, Hyun Paek, Sol A Kim, Jeong Hoon Kim, Jong Mo Lim
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Patent number: 10886058Abstract: An inductor includes a substrate, and a first coil pattern disposed on one surface of the substrate and having a spiral shape comprising a plurality of turns, wherein as the first coil pattern extends inwardly towards a center of the first coil pattern, a pattern width of the first coil pattern decreases while a center-to-center distance between two adjacent turns of the first coil pattern increases.Type: GrantFiled: July 24, 2019Date of Patent: January 5, 2021Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Hyung Jun Cho, Jong Mo Lim, Hyun Hwan Yoo, Hyun Jin Yoo, Yoo Hwan Kim, Yoo Sam Na
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Publication number: 20200403613Abstract: A radio-frequency switch includes a first series switch including a plurality of series field-effect transistors (FETs) connected in series between a first terminal and a second terminal, a first shunt switch including a plurality of shunt FETs connected in series between the first terminal and a first ground terminal, and a first shunt gate resistor circuit including a plurality of gate resistors respectively connected to gates of the plurality of shunt FETs of the first shunt switch. Respective resistance values of the plurality of gate resistors of the first shunt gate resistor circuit successively increase in a direction away from the first ground terminal toward the first terminal.Type: ApplicationFiled: March 27, 2020Publication date: December 24, 2020Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Byeong Hak JO, Yoo Sam NA, Hyun PAEK, Sol A KIM, Jeong Hoon KIM, Jong Mo LIM
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Patent number: 10826151Abstract: A directional coupler circuit includes a signal line disposed between a first terminal and a second terminal; a coupling line comprising a first end terminal and a second end terminal, and disposed to be coupled to the signal line; a switching circuit connecting the first end terminal and a coupling port to each other to extract a first coupling signal in a first coupling mode, and connecting the second end terminal and the coupling port to extract a second coupling signal in a second coupling mode; and a phase compensating circuit configured to compensate for a phase difference between the coupling port and a first isolation port in the first coupling mode, or compensate for a phase difference between the coupling port and a second isolation port in the second coupling mode.Type: GrantFiled: May 24, 2019Date of Patent: November 3, 2020Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Jong Mo Lim, Yoo Sam Na, Hyun Hwan Yoo, Hyun Jin Yoo, Hyung Jun Cho, Yoo Hwan Kim
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Patent number: 10826442Abstract: An apparatus includes an amplifying circuit configured to include stacked first and second transistors, and to amplify a signal input from an input terminal during an operation in an amplifying mode, and provide the amplified signal to an output terminal, and a negative feedback circuit comprising first to nth sub-negative feedback circuits, each corresponding to a separate gain mode included in the amplifying mode, wherein the negative feedback circuit is configured to provide a variable resistance value to determine a negative feedback gain based on each of the separate gain modes.Type: GrantFiled: November 20, 2018Date of Patent: November 3, 2020Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Hyun Jin Yoo, Jong Mo Lim, Yoo Hwan Kim, Hyung Jun Cho, Hyun Hwan Yoo, Yoo Sam Na
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Patent number: 10778175Abstract: A coupler circuit includes: a signal line disposed between a first terminal and a second terminal; a coupling line disposed between a coupling port and an isolation port such that the coupling line is coupled to the signal line and is configured to extract a coupling signal from the signal line; and a coupling adjusting circuit connected to the coupling port and the isolation port, and configured to reduce changes in an amount of coupling according to a change in a frequency band of a signal passing through the signal line.Type: GrantFiled: October 26, 2018Date of Patent: September 15, 2020Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Jong Mo Lim, Hyun Jin Yoo, Yoo Sam Na, Hyun Hwan Yoo, Hyung Jun Cho, Yoo Hwan Kim
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Publication number: 20200227201Abstract: An inductor includes a substrate, and a first coil pattern disposed on one surface of the substrate and having a spiral shape comprising a plurality of turns, wherein as the first coil pattern extends inwardly towards a center of the first coil pattern, a pattern width of the first coil pattern decreases while a center-to-center distance between two adjacent turns of the first coil pattern increases.Type: ApplicationFiled: July 24, 2019Publication date: July 16, 2020Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Hyung Jun CHO, Jong Mo LIM, Hyun Hwan YOO, Hyun Jin YOO, Yoo Hwan KIM, Yoo Sam NA
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Patent number: 10686413Abstract: A low noise amplifier circuit includes a first low noise amplifier including a common gate structure cascoded with a parallel common source structure to selectively amplify a band signal among first and second band signals; a second low noise amplifier including a common gate structure cascoded with a parallel common source structure to selectively amplify a band signal among third and fourth band signals; an output DPDT circuit including a first input terminal connected to the first low noise amplifier, a second input terminal connected to the second low noise amplifier, and a first output terminal and a second output terminal for selectively outputting signals input through the first input terminal and the second input terminal; and a control circuit performing an amplification control and a switching control for the first and second low noise amplifiers and the output DPDT circuit in response to a predetermined communications scheme.Type: GrantFiled: October 22, 2018Date of Patent: June 16, 2020Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Hyun Hwan Yoo, Jong Mo Lim, Yoo Sam Na, Hyun Jin Yoo, Hyung Jun Cho, Yoo Hwan Kim
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Patent number: RE49317Abstract: Disclosed herein are a transformer and a method of manufacturing the same. The transformer includes: a primary side winding having a loop shape; a secondary side winding formed on the same plane as that of the primary side winding in a remaining section except for at least a section at which it intersects with the primary side winding and having the same loop shape as that of the primary side winding so as to be electromagnetically coupled to the primary side winding; and an intersecting section formed so that the primary side and secondary side windings having the sum of the turn numbers of 3 or more intersect with each other in a two-layer structure, wherein the intersecting section includes at least one point of intermediate node having one side connected in a first layer and the other side connected in a second layer.Type: GrantFiled: December 13, 2019Date of Patent: November 29, 2022Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Hyun Paek, Yoo Sam Na, Hyeon Seok Hwang, Gyu Suck Kim, Su Gyeong Kim, Shin Hwan Hwang, Moon Suk Jeong