Abstract: One embodiment provides a cooling structure of a battery, including: a battery; an intake port, from which air in an vehicle interior is taken in; and an intake duct, which is in communication with the intake port and from which the air in the vehicle interior is introduced to the battery, wherein the intake duct is connected with a discharge port of an air conditioning duct, which is connected with an air conditioning system, and from which air discharged from the air conditioning system is introduced.

Abstract: One embodiment provides a cooling structure of a battery, including: a battery; an intake port, from which air in an vehicle interior is taken in; and an intake duct, which is in communication with the intake port and from which the air in the vehicle interior is introduced to the battery, wherein the intake duct is connected with a discharge port of an air conditioning duct, which is connected with an air conditioning system, and from which air discharged from the air conditioning system is introduced.

Abstract: To make it easier to carbonize the processing target material to a desired carbonized condition and also to make installment within a limited installment space possible. A carbonizing apparatus includes a carbonizing furnace having a feeding portion for a processing target material, a takeout portion for a carbonized material, a blowout portion for combustion air and an exhausting portion for combustion exhaust gas and a stirring device capable of stirring the processing target material inside the carbonizing furnace. The blowout amount of the combustion air is adjustable. The apparatus is operable to carbonize the processing target material fed from the feeding portion, with stirring, spontaneously combusting and moving the material while moving this material toward the takeout portion and subsequently to take out the resultant carbonized material from the takeout portion.

Abstract: In a coil spring of closed-end type, the coil spring is characterized in that a coupler is fixedly mounted between: an outer peripheral surface of a terminal convolution of a coil element rod; and, an outer peripheral surface of a subsequent convolution subsequent to the terminal convolution of the coil spring of closed-end type, whereby an amount of initial deflection is decreased.

Abstract: In a coil spring of closed-end type, the coil spring is characterized in that a coupler is fixedly mounted between: an outer peripheral surface of a terminal convolution of a coil element rod; and, an outer peripheral surface of a subsequent convolution subsequent to the terminal convolution of the coil spring of closed-end type, whereby an amount of initial deflection is decreased.

Abstract: Disclosure is a non-aqueous electrolyte solution secondary battery having an improved negative electrode material. The negative electrode material contains a carbonaceous material that has a Lc value of 0.70 to 2.20 nm calculated from X-ray diffraction analysis, and a degree of graphitization R value (ID/IG) is 0.90 to 1.20, the degree of graphitization being obtained by the ratio of the peak height (ID) representing a vibration mode based on a non-crystalline disorder structure within the range of from 1300 to 1400 cm−1 that is measured by Raman spectrum to the peak height (IG) representing a vibration mode based on a graphite crystalline structure within the range of 1580 to 1620 cm−1.

Abstract: A tablet presser is proposed which is inexpensive and not bulky and which can be stacked and automatically put into a bottle without any problem. Around a flat plate portion having sustantially the same size as the mouth of a tablet bottle, an elastically deformable legs are provided to retain the position of the flat plate portion. When the legs enter the bottle while being bent, they get into contact with the inner surface of the bottle. Movement of tablets in the bottle is prevented by pressing them with the bottom surface of the flat plate portion.

Abstract: A system for growing high-quality, low-carbon-concentration single crystals which have an excellent gas-flow guiding function near the melt, containing 1) an inverted conical, flow-guide cover placed above and coaxially with a double-walled crucible, with its lower end located immediately above the surface of the melt and in the space between the outer surface of the single crystal to be grown and the inner surface of the sidewall of the inner crucible; 2) a short passage comprising a hole passing through the sidewall of the inner crucible at a position higher than the level of the melt; and 3) a flow guide cylinder placed above and coaxially with the double-walled crucible, with its lower end located immediately above the surface of the melt and in the space between the outer surface of the sidewall of the inner crucible and the inner surface of the sidewall of the outer crucible, all arranged in a furnace.

Abstract: A method for recycling a heat exchanger includes spreading the outer periphery of a metal pipe of a heat exchanger in a predetermined direction, and placing the heat exchanger in the rotary space of a crushing roll which rotates around the axis thereof while slanting at a predetermined angle in order to separate the heat exchanger to the metal pipe and radiating metal fins. The crushing apparatus is provided with a crushing assembly which incorporates a processing space extending at a downward slant at a predetermined angle, an inlet, and a crushing roll applied to the heat exchanger which is rotated about the axis thereof in the processing space and moving down the same.

Abstract: A system for growing high-quality, low-carbon-concentration single crystals which have an excellent gas-flow guiding function near the melt, containing 1) an inverted conical, flow-guide cover placed above and coaxially with a double-walled crucible, with its lower end located immediately above the surface of the melt and in the space between the outer surface of the single crystal to be grown and the inner surface of the sidewall of the inner crucible; 2) a short passage comprising a hole passing through the sidewall of the inner crucible at a position higher than the level of the melt; and 3) a flow guide cylinder placed above and coaxially with the double-walled crucible, with its lower end located immediately above the surface of the melt and in the space between the outer surface of the sidewall of the inner crucible and the inner surface of the sidewall of the outer crucible, all arranged in a furnace.

Abstract: A system for growing high-quality, low-carbon-concentration single crystals which have an excellent gas-flow guiding function near the melt, containing 1) an inverted conical, flow-guide cover placed above and coaxially with a double-walled crucible, with its lower end located immediately above the surface of the melt and in the space between the outer surface of the single crystal to be grown and the inner surface of the sidewall of the inner crucible; 2) a short passage comprising a hole passing through the sidewall of the inner crucible at a position higher than the level of the melt; and 3) a flow guide cylinder placed above and coaxially with the double-walled crucible, with its lower end located immediately above the surface of the melt and in the space between the outer surface of the sidewall of the inner crucible and the inner surface of the sidewall of the outer crucible, all arranged in a furnace.

Abstract: There is disclosed a method of manufacturing, in which a diaphragm not provided with an annular rib is fastened to a housing through a spring casing.

Abstract: There is provided a double crucible for growing a silicon single crystal in which the partition wall 17 in the shape of ring is concentric with the main crucible 6 in the shape of bottomed cylinder and the lower end of the partition wall 17 is fixed on the inner bottom of the main crucible, and thus the outer crucible 18 and the inner crucible 19 are formed inside the main crucible. The partition wall 17 is uniform in thickness and has introducing holes 20 in its lower part which link the outer crucible with the inner crucible. The partition wall is made so that the inner diameter of its lower part may be smaller than the inner diameter of its upper part. Supposing that A is the diameter of the partition wall at a level of molten silicon, h is a depth from the surface of the molten silicon to the introducing holes, V(out) is an amount of molten silicon stored in the outer crucible, and V(in) is an amount of molten stored in the inner crucible, the relation of D/A=1.5 to 3, 2h/A>1, and V(out)/V(in)=0.

Abstract: An apparatus for growing a single crystal is disclosed which includes a double crucible assembly. The double crucible assembly has an outer crucible and an inner crucible disposed in the outer crucible. A support member is provided for supporting the inner crucible, and the support member is formed of an inorganic oxide non-reactive with silicon oxide. The upper end portion of the inner crucible may be formed of the same inorganic oxide. Alumina or mullite is suitable as the inorganic oxide. With the above construction, silicon single crystals obtained by the crystal growing apparatus will be free of contamination by carbon or heavy metals, and will exhibit excellent quality.

Abstract: A positive-working photoresist composition suitable for fine patterning in the manufacture of semiconductor devices, e.g., VLSIs, with high fidelity is proposed. The composition comprises 100 parts by weight of a cresol novolac resin and 25-60 parts by weight of a naphthoquinone diazide sulfonic acid ester as the photosensitive component while the cresol novolac resin component is prepared from a mixture of cresol isomers composed of 35-43% of m-cresol and 65-57% of p-cresol with substantial absence of o-cresol or composed of 35-43% of m-cresol, 65-57% of p-cresol and 1% or less of o-cresol.

Abstract: In apparatuses for melting semiconductor material and growing single crystals of semiconductor material, the apparatus comprising:(a) a furnace,(b) a cylindrical double crucible assembly comprising an inner crucible in which single crystals of semiconductor material are grown at a vertical-concentric line thereof, the inner crucible having an upper part and a lower part, and an outer crucible in which melted semiconductor material is received, the outer crucible having the inner crucible disposed therein,(c) a susceptor for supporting the outer crucible,(d) rotating means for rotating the susceptor,(e) a feed pipe for supplying starting material in the space formed between the inner and the outer crucibles,(f) fluid-passage means for permitting the melted semiconductor material to flow between the inner and outer crucibles, the fluid-passage means being disposed at the lower part of the inner crucible, andwherein the inner crucible being set inside the outer crucible in a separable manner, the apparatus impro

Abstract: A crystal growing apparatus includes a crucible, a feed pipe and a pulling mechanism. The crucible serves to melt a crystalline material. The feed pipe serves to cause the crystalline material to fall into the crucible to charge the crucible with the crystalline material. The pulling mechanism serves to pull a single-crystal from the molten material in the crucible. The feed pipe has a lower end positioned slightly above the surface of the molten material in the crucible and including a plurality of baffle plates mounted on an inner peripheral wall thereof in longitudinally spaced relation to one another. The baffle plates are arranged so that a pitch defined between adjacent two baffle plates decreases toward the lower end of the feed pipe.

Abstract: An apparatus for melting a semiconductor material and growing a semiconductor crystal from the melted material includes a susceptor having a peripheral rim, a quartz crucible assembly for receiving the semiconductor material therein. The crucible assembly includes an outer crucible housed in and supported by the susceptor and an inner crucible adapted to be so placed within the outer crucible as to define a multi-wall structure.

Abstract: In a method for pulling a single crystal, employing a double crucible assembly, the dopant concentration of the molten raw material in an inner crucible prior to the pulling, is raised to a value higher than the dopant concentration C of the molten raw material in the inner crucible at the steady state. Furthermore, at the initial stage of the pulling, the raw material having a dopant content ratio of no greater than kC is introduced into the outer crucible at a rate greater than the rate of decrease of the molten raw material within the inner crucible during the pulling, to achieve a concentration ratio of dopant between the inner and outer crucibles at a target value. Subsequently, the raw material having kC as the dopant content ratio is introduced into the outer crucible, at a rate equal to the rate of decrease of the molten raw material during the pulling.

Abstract: An apparatus for melting a semiconductor material and growing a semiconductor crystal from the melted material includes a susceptor having a peripheral rim, a quartz crucible assembly for receiving the semiconductor material therein. The crucible assembly includes an outer crucible housed in and supported by the susceptor and an inner crucible adapted to be so placed within the outer crucible as to define a multi-wall structure.