Abstract: In a method for pulling a single crystal, employing a double crucible assembly, the dopant concentration of the molten raw material in an inner crucible prior to the pulling, is raised to a value higher than the dopant concentration C of the molten raw material in the inner crucible at the steady state. Furthermore, at the initial stage of the pulling, the raw material having a dopant content ratio of no greater than kC is introduced into the outer crucible at a rate greater than the rate of decrease of the molten raw material within the inner crucible during the pulling, to achieve a concentration ratio of dopant between the inner and outer crucibles at a target value. Subsequently, the raw material having kC as the dopant content ratio is introduced into the outer crucible, at a rate equal to the rate of decrease of the molten raw material during the pulling.

Abstract: An apparatus for melting a semiconductor material and growing a semiconductor crystal from the melted material includes a susceptor having a peripheral rim, a quartz crucible assembly for receiving the semiconductor material therein. The crucible assembly includes an outer crucible housed in and supported by the susceptor and an inner crucible adapted to be so placed within the outer crucible as to define a multi-wall structure.

Abstract: The photosensitive composition, which is suitable as a photoresist material in fine patterning works for the manufacture of semiconductor devices, contains, as a photoextinctive agent, a combination of an alkali-insoluble dye and an alkali-soluble dye each having absorptivity of light in the wavelength region from 230 to 500 nm in a specified amount and in a specified ratio between them. By virtue of the formulation of combined dyes, the undesirable phenomenon of halation by the underlying aluminum coating layer on the substrate surface is greatly decreased so that patterned resist layer obtained with the composition is a high-fidelity reproduction of the original pattern even in a submicron range of fineness with good rectangularity of the cross sectional form of the patterned lines.

Abstract: A positive-working photoresist composition suitable for fine patterning in the manufacture of semiconductor devices, e.g. VLSIs, with high fidelity is proposed. The composition comprises a cresol novolac resin and a naphthoquinone diazide sulfonic acid ester as the photosensitive component while the cresol novolac resin component is characteristically a combination of two different cresol novolac resins differentiated in respects of the weight-average molecular weight, one large and the other small, and the weight proportion of the m- and p-isomers of cresol, one rich in the m-isomer and the other rich in the p-isomer, used in the preparation of the novolac and the overall weight ratio of the m-cresol and p-cresol moieties in the thus combined cresol novolac resins also should be in a specified range.

Abstract: The method of making a decorated film with a metal layer in the form of a given pattern comprises the steps of forming a metal layer on at least one surface of a base sheet through the utilization of the vacuum plating technique and removing a preselected area of said metal layer from said base sheet. When a water-insoluble resin is used, the resin is printed on the metal layer to form a positive resinous pattern and then the printed material is immersed in a metal soluble aqueous solution to remove the exposed metal layer without the resinous pattern. When a water-soluble resin is used, the resin is printed on the base sheet to form a negative resinous pattern and then the metal layer is formed on the surface with the resinous pattern. The resultant material is immersed in water to dissolve the resin and simultaneously remove the metal coated on the resinous pattern together with the resin.