Abstract: A sound detecting mechanism capable of forming a diaphragm and a back electrode on a substrate by a simple process includes acoustic holes corresponding to perforations formed on a front surface of a substrate. A second protective film, a sacrificial layer and a metal film are laminated on the front surface in a portion corresponding to the acoustic holes. The substrate is etched from the back surface thereof to a depth reaching the acoustic holes to form an acoustic opening. Subsequently, by effecting an etching from the back surface of the substrate through the acoustic holes, the sacrificial layer is removed and a void area is formed between the diaphragm made of the metal film, the substrate and the formed perforations. The sacrificial layer that remains after the etching is used as a spacer for maintaining a gap between the back electrode and the diaphragm.

Abstract: A liquid crystal display having an injection hole post structures compatible with liquid crystal are formed in an area near an injection hole to prevent pollutants seeped from an end-sealing material from penetrating into a display area, thereby suppressing the occurrence of picture quality trouble which easily occurs in the display area. The liquid crystal display includes a first substrate 11 and a second substrate 12 which are disposed with a predetermined gap therebetween, in which liquid crystal is sealed in the gap.

Abstract: There is provided a monocrystalline gallium nitride localized substrate suitable for manufacturing electronic-optical united devices in which electronic devices and optical devices are mixedly mounted on the same silicon substrate. An area in which monocrystalline gallium nitride 410 is grown is locally present on a silicon substrate 100 by forming silicon carbide 200 on the silicon substrate 100 to locally form the monocrystalline gallium nitride 410 on the above-mentioned silicon carbide 200. Silicon nitride 220 is used as a mask in forming the above-mentioned monocrystalline gallium nitride 410.

Abstract: A sound detecting mechanism is provided which forms a diaphragm with a required thickness by thickness control and yet restrains distortion of the diaphragm to provide high sensitivity. The sound detecting mechanism comprises a pair of electrodes forming a capacitor on a substrate A in which one of the electrodes is a back electrode C forming perforations Ca therein corresponding to acoustic holes and the other of the electrodes is a diaphragm B. The diaphragm B is mounted on the substrate A while the back electrode C is mounted in a position opposed to the diaphragm B across a void F to be supported by the substrate A, the back electrode C being formed by polycrystal silicon of 5 ?m to 20 ?m in thickness.

Abstract: A liquid crystal display having an injection hole post structures compatible with liquid crystal are formed in an area near an injection hole to prevent pollutants seeped from an end-sealing material from penetrating into a display area, thereby suppressing the occurrence of picture quality trouble which easily occurs in the display area. The liquid crystal display includes a first substrate 11 and a second substrate 12 which are disposed with a predetermined gap therebetween, in which liquid crystal is sealed in the gap.

Abstract: The present invention relates to a semiconductor electret condenser microphone capable of being reduced in size and including an acoustic sensor 100 and a case 200 for accommodating the acoustic sensor 100, the acoustic sensor 100 has a semiconductor chip 110 forming necessary electronic circuits 111A to 111C, and opening a through hole 112 away from the electronic circuits 111A to 111C, an electrode layer 120 formed on the surface of the semiconductor chip 110 away from the through hole 112, an electret member 130 laminated away from part of the electrode layer 120 and through hole 112, and a diaphragm 140 provided with a spacing 160 to the electret member 130, in which the electrode layer 120 exposed from the electret member 130 is connected to the electrode 111a of the electronic circuit 111A through the case 200 (FIG. 6).

Abstract: A liquid crystal display comprises an injection hole post structures compatible with liquid crystal formed in an area near an injection hole to prevent pollutants seeped from an end-sealing material from penetrating into a display area, thereby suppressing the deterioration of picture quality in the display area. The liquid crystal display comprises a first substrate and a second substrate having a predetermined gap therebetween. Liquid crystal is sealed in the gap. The liquid crystal display comprises post structures for controlling the gap, and a sealing material provided outside the display area for sealing the liquid crystal in the gap, and forming the open injection hole for injecting the liquid crystal therethrough. The end-sealing material seals the injection hole after the liquid crystal is sealed. Injection hole post structures are provided in the area near the injection hole, for dividing the injection hole into a plurality of portions.

Abstract: A manufacturing method for a buried insulating layer-type semiconductor silicon carbide substrate comprises the step of placing an SOI substrate 100, which has a surface silicon layer 130 of a predetermined thickness and a buried insulator 120, in a heating furnace 200 and of increasing the temperature of the atmosphere within heating furnace 200 while supplying a mixed gas (G1+G2) of a hydrogen gas G1 and of a hydrocarbon gas G2 into heating furnace 200, thereby, of metamorphosing surface silicon layer 130 of SOI substrate 100 into a single crystal silicon carbide thin film 140.

Abstract: A sound detecting mechanism capable of forming a diaphragm and a back electrode on a substrate by a simple process includes acoustic holes corresponding to perforations formed on a front surface of a substrate. A second protective film, a sacrificial layer and a metal film are laminated on the front surface in a portion corresponding to the acoustic holes. The substrate is etched from the back surface thereof to a depth reaching the acoustic holes to form an acoustic opening. Subsequently, by effecting an etching from the back surface of the substrate through the acoustic holes, the sacrificial layer is removed and a void area is formed between the diaphragm made of the metal film, the substrate and the formed perforations. The sacrificial layer that remains after the etching is used as a spacer for maintaining a gap between the back electrodes and the diaphragm.

Abstract: An optical connector socket includes: a body having an insertion section in which a socket-side optical element is arranged and into which an optical connector plug is inserted; a cover, covered on the body, having an opening communicated with the insertion section; a shutter, openably/closably attached to the cover, for closing the opening; and a herical spring for elastically urging the shutter in a constant-closing direction. The opening is larger than an outside dimension of the optical connector plug inserted into the cover and smaller than that of the shutter. Therefore, there is no light leakage and dust intrusion, the socket can be attached to a device or a wall so as to direct an opening toward a front face without a cap, and an inspection in a state where the socket is assembled in an electronic device can be performed without attaching/detaching the cap to/from the socket.

Abstract: A heat plate for fixation includes: a metallic base plate; and a heating resistor arranged on a reverse face of the metallic base plate, the heating resistor being formed by laminating, at least, an electric insulating layer and heating resistor layer in this order on the metallic base plate, wherein the heat plate is capable of raising the temperature of the metallic base plate to a fixing temperature when the heating resistor layer is energized and heated. A semicircular heating member for fixation includes the heat plate which is curved so that the metallic base plate has a convex surface, a belt type fixing device is provided with the semicircular heating member, and an electrophotographic image forming apparatus is provided with the belt type fixing device having the semicircular heating member.

Abstract: A manufacturing method for a buried insulating layer-type semiconductor silicon carbide substrate comprises the step of placing an SOI substrate 100, which has a surface silicon layer 130 of a predetermined thickness and a buried insulator 120, in a heating furnace 200 and of increasing the temperature of the atmosphere within heating furnace 200 while supplying a mixed gas (G1+G2) of a hydrogen gas G1 and of a hydrocarbon gas G2 into heating furnace 200, thereby, of metamorphosing surface silicon layer 130 of SOI substrate 100 into a single crystal silicon carbide thin film 140.

Abstract: The present invention relates to a semiconductor electret condenser microphone capable of being reduced in size and including an acoustic sensor 100 and a case 200 for accommodating the acoustic sensor 100, the acoustic sensor 100 has a semiconductor chip 110 forming necessary electronic circuits 111A to 111C, and opening a through hole 112 away from the electronic circuits 111A to 111C, an electrode layer 120 formed on the surface of the semiconductor chip 110 away from the through hole 112, an electret member 130 laminated away from part of the electrode layer 120 and through hole 112, and a diaphragm 140 provided with a spacing 160 to the electret member 130, in which the electrode layer 120 exposed from the electret member 130 is connected to the electrode 111a of the electronic circuit 111A through the case 200 (FIG. 6).

Abstract: Provided is a manufacturing method of a buried insulating layer type semiconductor silicon carbide substrate excellent in flatness of an interfaces in contact the insulating layer and a manufacturing device thereof. In the manufacturing device, an SOI substrate having a buried insulating layer positioned on a silicon substrate and a surface silicon layer formed on this buried insulating layer is placed in this film formation chamber. The manufacturing device includes: the film formation chamber in which the SOI substrate is placed; a gas supplying unit for supplying various types of gasses required for the manufacturing of a buried insulating layer type semiconductor silicon carbide substrate into the film formation chamber; an infrared ray irradiating unit for irradiating the surface silicon layer of the SOI substrate with infrared rays; and a control part for controlling the gas supplying unit and the infrared ray irradiating unit.

Abstract: A sound detecting mechanism is provided which forms a diaphragm with a required thickness by thickness control and yet restrains distortion of the diaphragm to provide high sensitivity. The sound detecting mechanism comprises a pair of electrodes forming a capacitor on a substrate A in which one of the electrodes is a back electrode C forming perforations Ca therein corresponding to acoustic holes and the other of the electrodes is a diaphragm B. The diaphragm B is mounted on the substrate A while the back electrode C is mounted in a position opposed to the diaphragm B across a void F to be supported by the substrate A, the back electrode C being formed by polycrystal silicon of 5 ?m to 20 ?m in thickness.

Abstract: A heat plate for fixation comprising: a metallic base plate; and a heating resistor arranged on a reverse face of the metallic base plate, the heating resistor being formed by laminating, at least, an electric insulating layer and heating resistor layer in this order on the metallic base plate, wherein the heat plate is capable of raising the temperature of the metallic base plate to a fixing temperature when the heating resistor layer is energized and heated. A semicircular heating member for fixation comprises the heat plate which is curved so that the metallic base plate has a convex surface, a belt type fixing device is provided with the semicircular heating member, and an electrophotographic image forming apparatus is provided with the belt type fixing device comprising the semicircular heating member.

Abstract: A sound detecting mechanism is provided which forms a diaphragm with a required thickness and yet restraining distortion of the diaphragm to provide high sensitivity. The sound detecting mechanism comprises a pair of electrodes forming a capacitor on a substrate A in which one of the electrodes is a back electrode C forming perforations Ca therein corresponding to acoustic holes and the other of the electrodes is a diaphragm B. A silicon nitride film 303 is provided on the side adjacent a base of the substrate A with respect to a membrane acting as the diaphragm B formed on the substrate A.

Abstract: A heat plate for fixation comprising: a metallic base plate; and a heating resistor arranged on a reverse face of the metallic base plate, the heating resistor being formed by laminating, at least, an electric insulating layer and heating resistor layer in this order on the metallic base plate, wherein the heat plate is capable of raising the temperature of the metallic base plate to a fixing temperature when the heating resistor layer is energized and heated. A semicircular heating member for fixation comprises the heat plate which is curved so that the metallic base plate has a convex surface, a belt type fixing device is provided with the semicircular heating member, and an electrophotographic image forming apparatus is provided with the belt type fixing device comprising the semicircular heating member.

Abstract: The present invention relates to a semiconductor electret condenser microphone capable of being reduced in size and including an acoustic sensor 100 and a case 200 for accommodating the acoustic sensor 100, the acoustic sensor 100 has a semiconductor chip 110 forming necessary electronic circuits 111A to 111C, and opening a through hole 112 away from the electronic circuits 111A to 111C, an electrode layer 120 formed on the surface of the semiconductor chip 110 away from the through hole 112, an electret member 130 laminated away from part of the electrode layer 120 and through hole 112, and a diaphragm 140 provided with a spacing 160 to the electret member 130, in which the electrode layer 120 exposed from the electret member 130 is connected to the electrode 111a of the electronic circuit 111A through the case 200 (FIG. 6).

Abstract: Provided is a manufacturing method of a buried insulating layer type semiconductor silicon carbide substrate excellent in flatness of an interfaces in contact the insulating layer and a manufacturing device thereof. In the manufacturing device, an SOI substrate having a buried insulating layer positioned on a silicon substrate and a surface silicon layer formed on this buried insulating layer is placed in this film formation chamber. The manufacturing device includes: the film formation chamber in which the SOI substrate is placed; a gas supplying unit for supplying various types of gasses required for the manufacturing of a buried insulating layer type semiconductor silicon carbide substrate into the film formation chamber; an infrared ray irradiating unit for irradiating the surface silicon layer of the SOI substrate with infrared rays; and a control part for controlling the gas supplying unit and the infrared ray irradiating unit.