Abstract: An object of the present invention is to simply and highly actively realize an isomerization reaction of an industrially important compound, diaminodicyclohexylmethane, without passing through a complicated multi-stage process.

Abstract: Disclosed is an optical semiconductor device which can be improved in light shift precision and restrained from undergoing a loss in light transmission. In this device, an inner side-surface of a first optical coupling portion of an optical coupling region and an inner side-surface of a second optical coupling portion of the region are increased in line edge roughness. This manner makes light coupling ease from a first to second optical waveguide. By contrast, the following are decreased in line edge roughness: an outer side-surface of the first optical coupling portion of the optical coupling region; an outer side-surface of the second optical coupling portion of the region; two opposed side-surfaces of a portion of the first optical waveguide, the portion being any portion other than the region; and two opposed side-surfaces of a portion of the second optical waveguide, the portion being any portion other than the region.

Abstract: An isomerization reaction of a predetermined compound, without passing through a high pressure reaction and a complicated multi-stage process. The isomerization method includes isomerizing, 1,3,3-trimethyl-1-(aminomethyl)aminocyclohexane in the presence of a compound represented by formula (1) and at least one compound selected from no alkali metal, an alkali metal-containing compound, an alkaline earth metal and an alkaline earth metal-containing compound: where R1 and R2 each independently represent a hydrogen atom or a monovalent group selected from a substituted or unsubstituted hydrocarbon group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted aryloxy group and an acyl group, R1 and R2 may mutually bind to form a ring, R3 represents a hydrogen atom and an n-valent group selected from a substituted or unsubstituted hydrocarbon group, and n represents as integer of 1 to 10.

Abstract: [Problem] To make an in-plane variation of a plasma density uniform. [Solution] A shower head according to an embodiment of the present technology includes a head body and a shower plate. The head body has an inner space. The shower plate includes a plurality of gas injecting ports communicated with the inner space, a gas injecting surface on which gas is injected from the plurality of gas injecting ports, and a plurality of hole portions disposed on the gas injecting surface. The shower plate is configured in such a manner that surface areas of the plurality of hole portions are radially gradually increased from a center of the gas injecting surface.

Abstract: The present invention can provide a method for producing 1,2,3,5,6-pentathiepane, comprising Steps A and B: Step A: a step of synthesizing a tetrathiocarbonate in a protic solvent; and Step B: a step of carrying out reaction between the tetrathiocarbonate and a dihalogenated methane in a mixed solvent (where the mass ratio of a protic solvent and an aprotic solvent is 13:87-38:62).

Abstract: A semiconductor device is provided with an insulating layer formed on a base substrate, an optical waveguide composed of a semiconductor layer formed on the insulating layer, and an insulating film formed along an upper surface of the insulating layer and a front surface of the optical waveguide. A peripheral edge portion of a lower surface of the optical waveguide is separated from the insulating layer, and the insulating film is buried between the peripheral edge portion and the insulating layer.

Abstract: A valve device includes: a ball valve having a ball face shaped in a convex spherical surface; and a valve seat having a seat face shaped in a concave spherical surface. The seat face is pressed onto the ball face. The ball valve is rotated to open a valve by communicating a valve opening defined in the ball valve and a seat opening defined in the valve seat with each other, and to close the valve by stop the communication. A diameter of the seat opening ?2 is smaller than a diameter of the valve opening ?1. A curvature radius of the ball face R1 is smaller than or equal to a curvature radius of the seat face is R2.

Abstract: A semiconductor device includes a first insulating layer over a substrate, a first metal oxide layer over the first insulating layer, an oxide semiconductor layer over the first metal oxide layer, a second metal oxide layer over the oxide semiconductor layer, a gate insulating layer over the second metal oxide layer, a second insulating layer over the second metal oxide layer, and a gate electrode layer over the gate insulating layer. The gate insulating layer includes a region in contact with a side surface of the gate electrode layer. The second insulating layer includes a region in contact with the gate insulating layer. The oxide semiconductor layer includes first to third regions. The first region includes a region overlapping with the gate electrode layer. The second region, which is between the first and third regions, includes a region overlapping with the gate insulating layer or the second insulating layer.

Abstract: A method for isomerizing a bis(aminomethyl)cyclohexane, including isomerizing a bis(aminomethyl)cyclohexane while introducing an inert gas in a reaction solution containing a bis(aminomethyl)cyclohexane, at least one selected from the group consisting of an alkali metal, an alkali metal-containing compound, an alkaline earth metal and an alkaline earth metal-containing compound, and a benzylamine compound.

Abstract: A valve device includes: a ball valve having a ball face shaped in a convex spherical surface; and a valve seat having a seat face shaped in a concave spherical surface. The seat face is pressed onto the ball face. The ball valve is rotated to open a valve by communicating a valve opening defined in the ball valve and a seat opening defined in the valve seat with each other, and to close the valve by stop the communication. A diameter of the seat opening ?2 is smaller than a diameter of the valve opening ?1. A curvature radius of the ball face R1 is smaller than or equal to a curvature radius of the seat face is R2.

Abstract: A semiconductor device includes a first insulating layer over a substrate, a first metal oxide layer over the first insulating layer, an oxide semiconductor layer over the first metal oxide layer, a second metal oxide layer over the oxide semiconductor layer, a gate insulating layer over the second metal oxide layer, a second insulating layer over the second metal oxide layer, and a gate electrode layer over the gate insulating layer. The gate insulating layer includes a region in contact with a side surface of the gate electrode layer. The second insulating layer includes a region in contact with the gate insulating layer. The oxide semiconductor layer includes first to third regions. The first region includes a region overlapping with the gate electrode layer. The second region, which is between the first and third regions, includes a region overlapping with the gate insulating layer or the second insulating layer.

Abstract: A performance of a semiconductor device is improved. In a method of manufacturing a semiconductor device, a first semiconductor portion and a second semiconductor portion made of silicon are formed on a base body via an insulation layer, and a third semiconductor portion including a semiconductor layer made of germanium is formed on the second semiconductor portion. Next, an insulation film is formed above the first semiconductor portion, an opening portion reaching the first semiconductor portion from an upper surface of the insulation film is formed, and a metal silicide layer is formed on a part of an upper surface of the first semiconductor portion exposed to the opening portion.

Abstract: A method for manufacturing a laminated rotor core comprises a first step of positioning and mounting a laminated core body 14 on a mounting table 17 of a carrying tray 16, a second step of positioning and arranging the laminated core body 14 mounted on a mounting table 17 on a lower die 28, the laminated core body 14 having permanent magnets 15 inserted into respective magnet insertion holes 11 and 12, and clamping the laminated core body 14 mounted on the mounting table 17 by an upper die 29 and a lower die 28, and a third step of pushing resin out of resin reservoir pots 42 provided in the lower die 28 and filling the respective corresponding magnet insertion holes 11 and 12 of the laminated core body 14 with the resin through resin passages 43 formed in the mounting table 17.

Abstract: The present invention makes it possible to provide an optical material composition containing an episulfide compound (A), a polythiol compound (B), and a photochromic compound (C). The episulfide compound (A) is preferably a compound represented by formula (1), and the polythiol compound (B) is preferably a compound represented by formula (6). (In formula (1), m represents an integer of 0 to 4, and n represents an integer of 0 to 2.) (In formula (6), n represents an integer of 4 to 20, and R1 and R2 may be the same or different and represent H, SH, C1-10 alkyl groups, or C1-10 alkylthiol groups.

Abstract: The present invention provides a composition for an optical material containing a ring compound (a) represented by formula (1), an episulfide compound (b), and sulfur (c), wherein the content of the ring compound (a) in the composition for an optical material is in the range of 5-70 mass %, the content of the episulfide compound (b) is in the range of 20-90 mass %, and the content of the sulfur (c) is in the range of 1-39 mass %. (In the formula, X represents S, Se or Te. a to f=0 to 3, 8?(a+c+e)?1, 8?(b+d+f)?2, and (b+d+f)?(a+c+e).) This composition for an optical material has a high refractive index as an optical characteristic, and has sufficient heat resistance and good mold release characteristics.

Abstract: An object of the present invention is to simply and highly actively realize an isomerization reaction of an industrially important compound, diaminodicyclohexylmethane, without passing through a complicated multi-stage process.

Abstract: The reliability of a copper wire is improved without inhibiting the wiring resistance of the copper wire. For example, another metallic element segregates in the boundary region between a copper film CUF1 and a copper film CUF2, and at the upper side face part of a wiring gutter leading to the boundary region. In a sectional view, a metallic element having a reducing power higher than copper segregates at the inner part of the copper wire apart from both the surface of the copper wire and the bottom face of the wiring gutter and at the side face part of the copper wire. In a sectional view, a metallic element different from copper segregates in the vicinity of the center part of the copper wire and at the side face part of the copper wire.

Abstract: A method for isomerizing a bis(aminomethyl)cyclohexane, including isomerizing a bis(aminomethyl)cyclohexane while introducing an inert gas in a reaction solution containing a bis(aminomethyl)cyclohexane, at least one selected from the group consisting of an alkali metal, an alkali metal-containing compound, an alkaline earth metal and an alkaline earth metal-containing compound, and a benzylamine compound.

Abstract: The present invention provides a method for isomerizing a cyclohexanediamine, which simply and highly actively realizes an isomerization reaction of a cyclohexanediamine, without passing through a high-pressure reaction and a complicated multi-stage process. The isomerization method has an isomerization step of isomerizing a cyclohexanediamine in the presence of a compound represented by the following formula (1) and at least one selected from the group consisting of an alkali metal, an alkali metal-containing compound, an alkaline earth metal or an alkaline earth metal-containing compound.

Abstract: An isomerization reaction of a predetermined compound, without passing through a high pressure reaction and a complicated multi-stage process. The isomerization method includes isomerizing, 1,3,3-trimethyl-1-(aminomethyl)aminocyclohexane in the presence of a compound represented by formula (1) and at least one compound selected from no alkali metal, an alkali metal-containing compound, an alkaline earth metal and an alkaline earth metal-containing compound: where R1 and R2 each independently represent a hydrogen atom or a monovalent group selected from a substituted or unsubstituted hydrocarbon group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted aryloxy group and an acyl group, R1 and R2 may mutually bind to form a ring, R3 represents a hydrogen atom and an n-valent group selected from a substituted or unsubstituted hydrocarbon group, and n represents as integer of 1 to 10.