Patents by Inventor Yoshifumi Tanada
Yoshifumi Tanada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11387263Abstract: An object of the present invention is to decrease substantial resistance of art electrode such as a transparent electrode or a wiring, and furthermore, to provide a display device for which is possible to apply same voltage to light-emitting elements. In the invention, a auxiliary wiring that is formed in one layer in which a conductive, film of a semiconductor element such as an electrode, wiring, a signal line, a scanning line, or a power supply line is connected to an electrode typified by a second electrode, and a wiring. It is preferable that the auxiliary wiring is formed into a conductive film to include low resistive material, especially, formed to include lower resistive, material than the resistance of an electrode and a wiring that is required to reduce the resistance.Type: GrantFiled: August 7, 2019Date of Patent: July 12, 2022Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Noriko Miyagi, Masayuki Sakakura, Tatsuya Arao, Ritsuko Nagao, Yoshifumi Tanada
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Patent number: 11316478Abstract: Power consumption of a signal processing circuit is reduced. Further, power consumption of a semiconductor device including the signal processing circuit is reduced. The signal processing circuit includes a reference voltage generation circuit, a voltage divider circuit, an operational amplifier, a bias circuit for supplying bias current to the operational amplifier, and first and second holding circuits. The first holding circuit is connected between the reference voltage generation circuit and the bias circuit. The second holding circuit is connected between the voltage divider circuit and a non-inverting input terminal of the operational amplifier. Reference voltage from the reference voltage generation circuit and reference voltage from the voltage divider circuit can be held in the first and second holding circuits, respectively, so that the reference voltage generation circuit can stop operating. Thus, power consumption of the reference voltage generation circuit can be reduced.Type: GrantFiled: February 6, 2020Date of Patent: April 26, 2022Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Kei Takahashi, Yoshifumi Tanada
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Publication number: 20220123097Abstract: Display irregularities in light emitting devices, which develop due to dispersions per pixel in the threshold value of TFTs for supplying electric current to light emitting elements, are obstacles to increasing the image quality of the light emitting devices. An electric potential in which the threshold voltage of a TFT (105) is either added to or subtracted from the electric potential of a reset signal line (110) is stored in capacitor means (108). A voltage, in which the corresponding threshold voltage is added to an image signal, is applied to a gate electrode of a TFT (106). TFTs within a pixel are disposed adjacently, and dispersion in the characteristics of the TFTs does not easily develop. The threshold value of to the TFT (105) is thus cancelled, even if the threshold values of the TFTs (106) differ per pixel, and a predetermined drain current can be supplied to an EL element (109).Type: ApplicationFiled: September 7, 2021Publication date: April 21, 2022Inventors: Hajime Kimura, Yoshifumi Tanada
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Publication number: 20220028326Abstract: Brightness irregularities that develop in a light emitting device due to is persion among pixels in the threshold values of TFTs used for supplying electric current to light emitting devices become obstacles to improved image quality of the light emitting device. As an image signal input to a pixel from a source signal line, a desired electric potential is applied to a gate electrode of a TFT for supplying electric current to an EL device, through a TFT having its gate and drain connected to each other. A voltage equal to the TFT threshold value is produced between the source and the drain of the TFT 105. An electric potential in which the image signal is offset by the amount of the threshold value is therefore applied to the gate electrode of the TFT. Further, TFTs are disposed in close proximity to each other within the pixel, so that dispersions in the TFT characteristics do not easily develop.Type: ApplicationFiled: May 13, 2021Publication date: January 27, 2022Inventors: Hajime Kimura, Yoshifumi Tanada
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Patent number: 11121203Abstract: Display irregularities in light emitting devices, which develop due to dispersions per pixel in the threshold value of TFTs for supplying electric current to light emitting elements, are obstacles to increasing the image quality of the light emitting devices. An electric potential in which the threshold voltage of a TFT (105) is either added to or subtracted from the electric potential of a reset signal line (110) is stored in capacitor means (108). A voltage, in which the corresponding threshold voltage is added to an image signal, is applied to a gate electrode of a TFT (106). TFTs within a pixel are disposed adjacently, and dispersion in the characteristics of the TFTs does not easily develop. The threshold value of the TFT (105) is thus canceled, even if the threshold values of the TFTs (106) differ per pixel, and a predetermined drain current can be supplied to an EL element (109).Type: GrantFiled: July 15, 2019Date of Patent: September 14, 2021Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hajime Kimura, Yoshifumi Tanada
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Patent number: 11011108Abstract: Brightness irregularities that develop in a light emitting device due to is persion among pixels in the threshold values of TFTs used for supplying electric current to light emitting devices become obstacles to improved image quality of the light emitting device. As an image signal input to a pixel from a source signal line, a desired electric potential is applied to a gate electrode of a TFT for supplying electric current to an EL device, through a TFT having its gate and drain connected to each other. A voltage equal to the TFT threshold value is produced between the source and the drain of the TFT 105. An electric potential in which the image signal is offset by the amount of the threshold value is therefore applied to the gate electrode of the TFT. Further, TFTs are disposed in close proximity to each other within the pixel, so that dispersions in the TFT characteristics do not easily develop.Type: GrantFiled: July 15, 2019Date of Patent: May 18, 2021Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hajime Kimura, Yoshifumi Tanada
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Patent number: 10991299Abstract: Brightness irregularities that develop in a light emitting device due to is persion among pixels in the threshold values of TFTs used for supplying electric current to light emitting devices become obstacles to improved image quality of the light emitting device. As an image signal input to a pixel from a source signal line, a desired electric potential is applied to a gate electrode of a TFT for supplying electric current to an EL device, through a TFT having its gate and drain connected to each other. A voltage equal to the TFT threshold value is produced between the source and the drain of the TFT 105. An electric potential in which the image signal is offset by the amount of the threshold value is therefore applied to the gate electrode of the TFT. Further, TFTs are disposed in close proximity to each other within the pixel, so that dispersions in the TFT characteristics do not easily develop.Type: GrantFiled: April 2, 2019Date of Patent: April 27, 2021Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hajime Kimura, Yoshifumi Tanada
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Patent number: 10916319Abstract: A pulse is inputted to TFTs 101 and 104 so that the TFTs would turn ON and then potential of a node a rises. When the potential of the node ? reaches (VDD?VthN), the node ? became in a floating state. Accordingly, a TFT 105 then turns ON, and potential of an output node rises as a clock signal reaches the level H. On the other hand, potential of a gate electrode of the TFT 105 further rises due to an operation of capacitance 107 as the potential of the output node rises, so that the potential of the output node would be higher than (VDD+VthN). Thus, the potential of the output node rises to VDD without voltage drop caused by a threshold of the TFT 105.Type: GrantFiled: September 20, 2019Date of Patent: February 9, 2021Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Munehiro Azami, Shou Nagao, Yoshifumi Tanada
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Patent number: 10891894Abstract: Brightness irregularities that develop in a light emitting device due to is persion among pixels in the threshold values of TFTs used for supplying electric current to light emitting devices become obstacles to improved image quality of the light emitting device. As an image signal input to a pixel from a source signal line, a desired electric potential is applied to a gate electrode of a TFT for supplying electric current to an EL device, through a TFT having its gate and drain connected to each other. A voltage equal to the TFT threshold value is produced between the source and the drain of the TFT 105. An electric potential in which the image signal is offset by the amount of the threshold value is therefore applied to the gate electrode of the TFT. Further, TFTs are disposed in close proximity to each other within the pixel, so that dispersions in the TFT characteristics do not easily develop.Type: GrantFiled: November 21, 2017Date of Patent: January 12, 2021Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hajime Kimura, Yoshifumi Tanada
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Patent number: 10762834Abstract: Brightness irregularities that develop in a light emitting device due to is persion among pixels in the threshold values of TFTs used for supplying electric current to light emitting devices become obstacles to improved image quality of the light emitting device. As an image signal input to a pixel from a source signal line, a desired electric potential is applied to a gate electrode of a TFT for supplying electric current to an EL device, through a TFT having its gate and drain connected to each other. A voltage equal to the TFT threshold value is produced between the source and the drain of the TFT 105. An electric potential in which the image signal is offset by the amount of the threshold value is therefore applied to the gate electrode of the TFT. Further, TFTs are disposed in close proximity to each other within the pixel, so that dispersions in the TFT characteristics do not easily develop.Type: GrantFiled: November 21, 2017Date of Patent: September 1, 2020Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hajime Kimura, Yoshifumi Tanada
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Publication number: 20200177132Abstract: Power consumption of a signal processing circuit is reduced. Further, power consumption of a semiconductor device including the signal processing circuit is reduced. The signal processing circuit includes a reference voltage generation circuit, a voltage divider circuit, an operational amplifier, a bias circuit for supplying bias current to the operational amplifier, and first and second holding circuits. The first holding circuit is connected between the reference voltage generation circuit and the bias circuit. The second holding circuit is connected between the voltage divider circuit and a non-inverting input terminal of the operational amplifier. Reference voltage from the reference voltage generation circuit and reference voltage from the voltage divider circuit can be held in the first and second holding circuits, respectively, so that the reference voltage generation circuit can stop operating. Thus, power consumption of the reference voltage generation circuit can be reduced.Type: ApplicationFiled: February 6, 2020Publication date: June 4, 2020Inventors: Kei TAKAHASHI, Yoshifumi TANADA
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Patent number: 10672329Abstract: A light emitting device that achieves long life, and which is capable of performing high duty drive, by suppressing initial light emitting element deterioration is provided. Reverse bias application to an EL element (109) is performed one row at a time by forming a reverse bias electric power source line (112) and a reverse bias TFT (108). Reverse bias application can therefore be performed in synchronous with operations for write-in of an image signal, light emission, erasure, and the like. Reverse bias application therefore becomes possible while maintaining a duty equivalent to that of a conventional driving method.Type: GrantFiled: August 2, 2019Date of Patent: June 2, 2020Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Mitusaki Osame, Aya Anzai, Yoshifumi Tanada, Keisuke Miyagawa, Satoshi Seo, Shunpei Yamazaki
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Publication number: 20200082895Abstract: A pulse is inputted to TFTs 101 and 104 so that the TFTs would turn ON and then potential of a node a rises. When the potential of the node ? reaches (VDD?VthN), the node ? became in a floating state. Accordingly, a TFT 105 then turns ON, and potential of an output node rises as a clock signal reaches the level H. On the other hand, potential of a gate electrode of the TFT 105 further rises due to an operation of capacitance 107 as the potential of the output node rises, so that the potential of the output node would be higher than (VDD+VthN). Thus, the potential of the output node rises to VDD without voltage drop caused by a threshold of the TFT 105.Type: ApplicationFiled: September 20, 2019Publication date: March 12, 2020Inventors: Munehiro Azami, Shou Nagao, Yoshifumi Tanada
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Patent number: 10560056Abstract: Power consumption of a signal processing circuit is reduced. Further, power consumption of a semiconductor device including the signal processing circuit is reduced. The signal processing circuit includes a reference voltage generation circuit, a voltage divider circuit, an operational amplifier, a bias circuit for supplying bias current to the operational amplifier, and first and second holding circuits. The first holding circuit is connected between the reference voltage generation circuit and the bias circuit. The second holding circuit is connected between the voltage divider circuit and a non-inverting input terminal of the operational amplifier. Reference voltage from the reference voltage generation circuit and reference voltage from the voltage divider circuit can be held in the first and second holding circuits, respectively, so that the reference voltage generation circuit can stop operating. Thus, power consumption of the reference voltage generation circuit can be reduced.Type: GrantFiled: August 17, 2017Date of Patent: February 11, 2020Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Kei Takahashi, Yoshifumi Tanada
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Publication number: 20200035708Abstract: An object of the present invention is to decrease substantial resistance of art electrode such as a transparent electrode or a wiring, and furthermore, to provide a display device for which is possible to apply same voltage to light-emitting elements. In the invention, a auxiliary wiring that is formed in one layer in which a conductive, film of a semiconductor element such as an electrode, wiring, a signal line, a scanning line, or a power supply line is connected to an electrode typified by a second electrode, and a wiring. It is preferable that the auxiliary wiring is formed into a conductive film to include low resistive material, especially, formed to include lower resistive, material than the resistance of an electrode and a wiring that is required to reduce the resistance.Type: ApplicationFiled: August 7, 2019Publication date: January 30, 2020Inventors: Noriko Miyagi, Masayuki Sakakura, Tatsuya Arao, Ritsuko Nagao, Yoshifumi Tanada
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Publication number: 20200013847Abstract: Display irregularities in light emitting devices, which develop due to dispersions per pixel in the threshold value of TFTs for supplying electric current to light emitting elements, are obstacles to increasing the image quality of the light emitting devices. An electric potential in which the threshold voltage of a TFT (105) is either added to or subtracted from the electric potential of a reset signal line (110) is stored in capacitor means (108). A voltage, in which the corresponding threshold voltage is added to an image signal, is applied to a gate electrode of a TFT (106). TFTs within a pixel are disposed adjacently, and dispersion in the characteristics of the TFTs does not easily develop. The threshold value of the TFT (105) is thus canceled, even if the threshold values of the TFTs (106) differ per pixel, and a predetermined drain current can be supplied to an EL element (109).Type: ApplicationFiled: July 15, 2019Publication date: January 9, 2020Inventors: Hajime Kimura, Yoshifumi Tanada
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Publication number: 20190355297Abstract: A light emitting device that achieves long life, and which is capable of performing high duty drive, by suppressing initial light emitting element deterioration is provided. Reverse bias application to an EL element (109) is performed one row at a time by forming a reverse bias electric power source line (112) and a reverse bias TFT (108). Reverse bias application can therefore be performed in synchronous with operations for write-in of an image signal, light emission, erasure, and the like. Reverse bias application therefore becomes possible while maintaining a duty equivalent to that of a conventional driving method.Type: ApplicationFiled: August 2, 2019Publication date: November 21, 2019Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Mitusaki Osame, Aya Anzai, Yoshifumi Tanada, Keisuke Miyagawa, Satoshi Seo, Shunpei Yamazaki
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Publication number: 20190340976Abstract: Brightness irregularities that develop in a light emitting device due to is persion among pixels in the threshold values of TFTs used for supplying electric current to light emitting devices become obstacles to improved image quality of the light emitting device. As an image signal input to a pixel from a source signal line, a desired electric potential is applied to a gate electrode of a TFT for supplying electric current to an EL device, through a TFT having its gate and drain connected to each other. A voltage equal to the TFT threshold value is produced between the source and the drain of the TFT 105. An electric potential in which the image signal is offset by the amount of the threshold value is therefore applied to the gate electrode of the TFT. Further, TFTs are disposed in close proximity to each other within the pixel, so that dispersions in the TFT characteristics do not easily develop.Type: ApplicationFiled: July 15, 2019Publication date: November 7, 2019Inventors: Hajime Kimura, Yoshifumi Tanada
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Publication number: 20190295465Abstract: Brightness irregularities that develop in a light emitting device due to is persion among pixels in the threshold values of TFTs used for supplying electric current to light emitting devices become obstacles to improved image quality of the light emitting device. As an image signal input to a pixel from a source signal line, a desired electric potential is applied to a gate electrode of a TFT for supplying electric current to an EL device, through a TFT having its gate and drain connected to each other. A voltage equal to the TFT threshold value is produced between the source and the drain of the TFT 105. An electric potential in which the image signal is offset by the amount of the threshold value is therefore applied to the gate electrode of the TFT. Further, TFTs are disposed in close proximity to each other within the pixel, so that dispersions in the TFT characteristics do not easily develop.Type: ApplicationFiled: April 2, 2019Publication date: September 26, 2019Inventors: Hajime Kimura, Yoshifumi Tanada
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Patent number: 10424390Abstract: A pulse is inputted to TFTs 101 and 104 so that the TFTs would turn ON and then potential of a node ? rises. When the potential of the node ? reaches (VDD?VthN), the node ? became in a floating state. Accordingly, a TFT 105 then turns ON, and potential of an output node rises as a clock signal reaches the level H. On the other hand, potential of a gate electrode of the TFT 105 further rises due to an operation of capacitance 107 as the potential of the output node rises, so that the potential of the output node would be higher than (VDD+VthN). Thus, the potential of the output node rises to VDD without voltage drop caused by a threshold of the TFT 105.Type: GrantFiled: October 17, 2018Date of Patent: September 24, 2019Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Munehiro Azami, Shou Nagao, Yoshifumi Tanada