Patents by Inventor Yoshiharu Takada
Yoshiharu Takada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11688711Abstract: A semiconductor device includes a first lead portion and a second lead portion spaced from each other in a first direction. A semiconductor chip is mounted to the first lead portion. A first connector has a first portion contacting a second electrode on the chip and a second portion connected to the second lead portion. A second connector has third portion that contacts the second electrode, but at a position further away than the first portion, and a fourth portion connected to the second portion. At least a part of the second connector overlaps a part of the first connector between the first lead portion and the second lead portion.Type: GrantFiled: November 1, 2021Date of Patent: June 27, 2023Assignees: Kabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage CorporationInventor: Yoshiharu Takada
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Publication number: 20230078429Abstract: A semiconductor device includes a semiconductor chip and a metal plate. The semiconductor chip has first and second surfaces, four side surface, four corners, four sides. The four side surfaces connect the first surface and the second surface. Two of the four side surfaces contact each other at one of the four corners. The four side surfaces contact the second surface at the four sides. The first and second electrodes are provided at the first front side. The metal plate is connected to the second surface side of the semiconductor chip. The metal plate includes third and fourth surfaces, and a through-hole or a notch. The third surface is connected to the second surface of the semiconductor chip. The fourth surface is provided at a side opposite to the third surface. The through-hole or the notch extends through the metal plate from the fourth surface to the third surface.Type: ApplicationFiled: March 10, 2022Publication date: March 16, 2023Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATIONInventor: Yoshiharu TAKADA
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Publication number: 20220310539Abstract: A semiconductor device includes a first semiconductor layer, a first metal layer, a bonding layer, a second metal layer, and a second semiconductor layer. The first metal layer is located on the first semiconductor layer and is in contact with the first semiconductor layer. The bonding layer is located on the first metal layer and is in contact with the first metal layer. The bonding layer is conductive. The second metal layer is located on the bonding layer and is in contact with the bonding layer. The second semiconductor layer is located on the second metal layer and is in contact with the second metal layer. The second semiconductor layer includes at least a portion of a semiconductor element.Type: ApplicationFiled: September 9, 2021Publication date: September 29, 2022Inventor: Yoshiharu TAKADA
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Patent number: 11456201Abstract: A semiconductor substrate according to an embodiment includes a substrate having a first substrate surface, the substrate having a first outer diameter; a metal layer provided on the first substrate surface, the metal layer having a second outer diameter smaller than the first outer diameter; a first adhesive tape having a ring shape, the ring shape having a third outer diameter smaller than the first outer diameter and larger than the second outer diameter, the ring shape having a third inner diameter smaller than the second outer diameter, the first adhesive tape having a first base material, the first base material having a first surface and a second surface opposed to the first surface, the first adhesive tape having a first adhesive layer provided on the first surface, the first adhesive tape being attached to the first substrate surface and the metal layer through the first adhesive layer; and a second adhesive tape having a fourth outer diameter smaller than the first outer diameter and larger than theType: GrantFiled: March 8, 2021Date of Patent: September 27, 2022Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATIONInventor: Yoshiharu Takada
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Publication number: 20220093442Abstract: A semiconductor substrate according to an embodiment includes a substrate having a first substrate surface, the substrate having a first outer diameter; a metal layer provided on the first substrate surface, the metal layer having a second outer diameter smaller than the first outer diameter; a first adhesive tape having a ring shape, the ring shape having a third outer diameter smaller than the first outer diameter and larger than the second outer diameter, the ring shape having a third inner diameter smaller than the second outer diameter, the first adhesive tape having a first base material, the first base material having a first surface and a second surface opposed to the first surface, the first adhesive tape having a first adhesive layer provided on the first surface, the first adhesive tape being attached to the first substrate surface and the metal layer through the first adhesive layer; and a second adhesive tape having a fourth outer diameter smaller than the first outer diameter and larger than theType: ApplicationFiled: March 8, 2021Publication date: March 24, 2022Inventor: Yoshiharu Takada
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Publication number: 20220059494Abstract: A semiconductor device includes a first lead portion and a second lead portion spaced from each other in a first direction. A semiconductor chip is mounted to the first lead portion. A first connector has a first portion contacting a second electrode on the chip and a second portion connected to the second lead portion. A second connector has third portion that contacts the second electrode, but at a position further away than the first portion, and a fourth portion connected to the second portion. At least a part of the second connector overlaps a part of the first connector between the first lead portion and the second lead portion.Type: ApplicationFiled: November 1, 2021Publication date: February 24, 2022Inventor: Yoshiharu TAKADA
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Patent number: 11195814Abstract: A semiconductor device includes a first lead portion and a second lead portion spaced from each other in a first direction. A semiconductor chip is mounted to the first lead portion. A first connector has a first portion contacting a second electrode on the chip and a second portion connected to the second lead portion. A second connector has third portion that contacts the second electrode, but at a position further away than the first portion, and a fourth portion connected to the second portion. At least a part of the second connector overlaps a part of the first connector between the first lead portion and the second lead portion.Type: GrantFiled: March 2, 2020Date of Patent: December 7, 2021Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATIONInventor: Yoshiharu Takada
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Patent number: 10998437Abstract: A semiconductor device according to an embodiment includes a semiconductor substrate having a first plane and a second plane, a semiconductor element provided in the semiconductor substrate, the semiconductor element including a gate insulating film provided in the first plane, a first electrode provided on the first plane, a second electrode provided on the first electrode, the second electrode including a first metal material, the second electrode having a film thickness of (65 [g·?m·cm?3])/(density of the first metal material [g·cm?3]) or more, a first solder portion provided on the second electrode, a third electrode provided on the first solder portion, a fourth electrode provided on the first plane, a fifth electrode provided on the fourth electrode, the fifth electrode including a second metal material, the fifth electrode having a film thickness of (65 [g·?m·cm?3])/(density of the second metal material [g·cm?3]) or more, a second solder portion provided on the fifth electrode, and a sixth electrode prType: GrantFiled: August 5, 2019Date of Patent: May 4, 2021Assignees: Kabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage CorporationInventors: Tatsuya Ohguro, Tatsuya Nishiwaki, Hideharu Kojima, Yoshiharu Takada, Kikuo Aida, Kentaro Ichinoseki, Kohei Oasa, Shingo Sato
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Publication number: 20200402946Abstract: A semiconductor device includes a first lead portion and a second lead portion spaced from each other in a first direction. A semiconductor chip is mounted to the first lead portion. A first connector has a first portion contacting a second electrode on the chip and a second portion connected to the second lead portion. A second connector has third portion that contacts the second electrode, but at a position further away than the first portion, and a fourth portion connected to the second portion. At least a part of the second connector overlaps a part of the first connector between the first lead portion and the second lead portion.Type: ApplicationFiled: March 2, 2020Publication date: December 24, 2020Inventor: Yoshiharu TAKADA
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Patent number: 10825756Abstract: According to one embodiment, a semiconductor device includes a semiconductor chip, and a die pad. The die pad has a first surface. The semiconductor chip is bonded on the first surface using a paste including a metal particle. A concave structure is provided in the first surface. The concave structure is positioned directly under each of a plurality of sides of the semiconductor chip and extends along each of the plurality of sides.Type: GrantFiled: March 4, 2019Date of Patent: November 3, 2020Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATIONInventors: Hideharu Kojima, Yoshiharu Takada
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Patent number: 10784165Abstract: According to an embodiment, a semiconductor device includes a silicon substrate, a device layer, and a lower layer. The device layer is formed on an upper surface of the silicon substrate. The lower layer is formed on a lower surface of the silicon substrate and has a side surface connecting to a side surface of the silicon substrate. At least a pair of side surfaces of the semiconductor device has a curved shape widening from an upper side toward a lower side.Type: GrantFiled: March 12, 2018Date of Patent: September 22, 2020Assignees: Kabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage CorporationInventors: Shingo Masuko, Kazuo Fujimura, Yoshiharu Takada, Ichiro Mizushima
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Publication number: 20200152785Abstract: A semiconductor device according to an embodiment includes a semiconductor substrate having a first plane and a second plane, a semiconductor element provided in the semiconductor substrate, the semiconductor element including a gate insulating film provided in the first plane, a first electrode provided on the first plane, a second electrode provided on the first electrode, the second electrode including a first metal material, the second electrode having a film thickness of (65 [g·?m·cm?3])/(density of the first metal material [g·cm?3]) or more, a first solder portion provided on the second electrode, a third electrode provided on the first solder portion, a fourth electrode provided on the first plane, a fifth electrode provided on the fourth electrode, the fifth electrode including a second metal material, the fifth electrode having a film thickness of (65 [g·m·cm?3])/(density of the second metal material [g·cm?3]) or more, a second solder portion provided on the fifth electrode, and a sixth electrode proType: ApplicationFiled: August 5, 2019Publication date: May 14, 2020Applicants: Kabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage CorporationInventors: Tatsuya OHGURO, Tatsuya NISHIWAKI, Hideharu KOJIMA, Yoshiharu TAKADA, Kikuo AIDA, Kentaro ICHINOSEKI, Kohei OASA, Shingo SATO
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Publication number: 20200075464Abstract: According to one embodiment, a semiconductor device includes a semiconductor chip, and a die pad. The die pad has a first surface. The semiconductor chip is bonded on the first surface using a paste including a metal particle. A concave structure is provided in the first surface. The concave structure is positioned directly under each of a plurality of sides of the semiconductor chip and extends along each of the plurality of sides.Type: ApplicationFiled: March 4, 2019Publication date: March 5, 2020Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELETRONIC DEVICES & STORAGE CORPORATIONInventors: Hideharu KOJIMA, Yoshiharu Takada
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Publication number: 20190267288Abstract: According to an embodiment, a semiconductor device includes a silicon substrate, a semiconductor layer, and a lower layer. The semiconductor layer is formed on an upper surface of the silicon substrate. The lower layer is formed on a lower surface of the silicon substrate and has a side surface connecting to a side surface of the silicon substrate. At least a pair of side surfaces of the semiconductor device has a curved shape widening from an upper side toward a lower side.Type: ApplicationFiled: March 12, 2018Publication date: August 29, 2019Inventors: Shingo Masuko, Kazuo Fujimura, Yoshiharu Takada, Ichiro Mizushima
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Patent number: 10074736Abstract: According to one embodiment, a semiconductor device includes a semiconductor layer, an electrode, and an insulating portion. The semiconductor layer has a first surface. The electrode is provided on the first surface of the semiconductor layer. The insulating portion includes a first layer and a second layer. The first layer covers the electrode on the first surface of the semiconductor layer and has a first internal stress along the first surface. The second layer is provided on the first layer and has a second internal stress in a reverse direction of the first internal stress.Type: GrantFiled: September 22, 2015Date of Patent: September 11, 2018Assignee: Kabushiki Kaisha ToshibaInventor: Yoshiharu Takada
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Patent number: 9953894Abstract: A semiconductor device including: a semiconductor element, a substrate having a first surface on which the semiconductor element is provided, and a second surface located opposite the first surface, a metal species provided on the second surface, and a plated metal portion provided at least in part on the second surface on the metal species. The semiconductor device further includes a first region where the plated metal portion is provided and a second region where the plated metal portion is not provided are alternately arranged at a peripheral portion of the second surface.Type: GrantFiled: March 1, 2017Date of Patent: April 24, 2018Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Shingo Masuko, Yoshiharu Takada, Kazuo Fujimura
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Publication number: 20180082918Abstract: A semiconductor device including: a semiconductor element, a substrate having a first surface on which the semiconductor element is provided, and a second surface located opposite the first surface, a metal species provided on the second surface, and a plated metal portion provided at least in part on the second surface on the metal species. The semiconductor device further includes a first region where the plated metal portion is provided and a second region where the plated metal portion is not provided are alternately arranged at a peripheral portion of the second surface.Type: ApplicationFiled: March 1, 2017Publication date: March 22, 2018Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Shingo MASUKO, Yoshiharu TAKADA, Kazuo FUJIMURA
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Publication number: 20160268408Abstract: A semiconductor device includes a first compound semiconductor layer on a substrate, a second compound semiconductor layer on the first compound semiconductor layer which has a band gap greater than the band gap of the first compound semiconductor layer, and a gate electrode on the second compound semiconductor layer. The gate length of the gate electrode is more twice as great as the thickness of the first compound semiconductor layer, and is equal to or smaller than five times as great as the thickness of the first compound semiconductor layer.Type: ApplicationFiled: August 31, 2015Publication date: September 15, 2016Inventors: Kohei OASA, Yoshiharu TAKADA, Akira YOSHIOKA, Yasuhiro ISOBE, Hung HUNG
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Publication number: 20160268410Abstract: A semiconductor device includes: a substrate; a first compound semiconductor layer provided on the substrate; a second compound semiconductor layer provided on the first compound semiconductor layer and having a band gap larger than that of the first compound semiconductor layer; a first element isolation region provided in the first compound semiconductor layer and the second compound semiconductor layer; and a first electrode and a second electrode which are electrically connected to a first conductive region formed from the first and second compound semiconductor layers arranged outside the first element isolation region.Type: ApplicationFiled: September 1, 2015Publication date: September 15, 2016Inventors: Takashi Onizawa, Yoshiharu Takada
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Patent number: 9419119Abstract: A semiconductor device includes a semiconductor region, a first electrode provided on the semiconductor region, a second electrode provided on the semiconductor region adjacent to and spaced from a side of the first electrode, and containing an identical material as the material of the first electrode, a third electrode provided on the semiconductor region in a location between the first electrode and the second electrode, a first insulating film provided between the semiconductor region and the third electrode, and a fourth electrode connected to the third electrode containing the same material as the material of the first electrode and the second electrode.Type: GrantFiled: February 26, 2015Date of Patent: August 16, 2016Assignee: Kabushiki Kaisha ToshibaInventors: Yoshiharu Takada, Takeshi Shibata