Abstract: A plurality of semiconductor chips are mounted and sealed with a resin layer. Each of the semiconductor chips is secured by a surface thereof opposite to an element forming surface onto either side of a die pad, and at least a pair of the semiconductor chips are secured on at least one side of the die pad so that the element forming surfaces thereof face each other, and first electrode sections provided on the element forming surfaces are coupled together by a conductive coupling material. Therefore, a semiconductor integrated circuit device having many semiconductor chips fitted in a single package can be easily fabricated while restraining increases in the down-set value of the die pad from the reference surface and maintaining a high level of accuracy.

Abstract: A heat-resistant adhesive is provided for use in an adhesive member for the fabrication of a semiconductor package by bonding a semiconductor chip to a lead frame with the adhesive member and sealing at least the semiconductor chip and a bonded part between the semiconductor chip and the lead frame with a sealant. The adhesive has a coming-out length of not more than 2 mm and a water absorption rate of not more than 3 wt. %. Preferably, the adhesive has a glass transition point of at least 200° C.

Abstract: A heat-resistant adhesive is provided for use in an adhesive member for the fabrication of a semiconductor package by bonding a semiconductor chip to a lead frame with the adhesive member and sealing at least the semiconductor chip and a bonded part between the semiconductor chip and the lead frame with a sealant. The adhesive has a coming-out length of not more than 2 mm and a water absorption rate of not more than 3 wt. %. Preferably, the adhesive has a glass transition point of at least 200.degree. C.

Abstract: A method of forming a resin film pattern, comprising the steps of (A) producing a resin film layer soluble in an organic solvent, on a substrate such as silicon wafer, even engineering plastics being usable as a resin of the resin film layer; (B) forming a resist image of desired pattern on the organic solvent-soluble resin film layer; (C) etching each of those parts of the organic solvent-soluble resin film layer which are not covered with the resist image, using the organic solvent; and (D) removing the resist image from the resulting, organic solvent-soluble resin film layer using a resist image remover which contains 0.01-10.0 parts-by-weight of arylsulfonic acid with respect to 100 parts-by-weight of solvent having a solubility parameter of 5.0-11.0. The step (D) may well be followed by the step (E) of processing the substrate which includes the resin film layer, with alcohol.

Abstract: A method of forming a resin film pattern, comprising the steps of (A) producing a resin film layer soluble in an organic solvent, on a substrate such as silicon wafer, even engineering plastics being usable as a resin of the resin film layer; (B) forming a resist image of desired pattern on the organic solvent-soluble resin film layer; (C) etching each of those parts of the organic solvent-soluble resin film layer which are not covered with the resist image, using the organic solvent; and (D) removing the resist image from the resulting, organic solvent-soluble resin film layer using a resist image remover which contains 0.01-10.0 parts-by-weight of arylsulfonic acid with respect to 100 parts-by-weight of solvent having a solubility parameter of 5.0-11.0. The step (D) may well be followed by the step (E) of processing the substrate which includes the resin film layer, with alcohol.